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1. 发明授权

US5982531A Semiconductor optical amplifier 失效
标题翻译：半导体光放大器
公开(公告)号：US5982531A
公开(公告)日：1999-11-09
申请号：US945589
申请日：1997-10-29
申请人： Jean-Yves Emery , Leon Goldstein , Pierre Doussiere , Jean Barrau
发明人： Jean-Yves Emery , Leon Goldstein , Pierre Doussiere , Jean Barrau
IPC分类号： H01S5/00 , H01S5/32 , H01S5/50 , H01S3/25 , H01L29/06 , H01S3/19
CPC分类号： H01S5/5009 , H01S5/3201
摘要： The invention concerns a semiconductor optical amplifier. The optical guide structure of this amplifier comprises a rectangular cross-section active stripe (12). Its material is homogeneous and it is subjected to a tensile strain sufficient to render the amplifier insensitive to the polarisation of the light to be amplified.The invention finds an application in optical telecommunications.
摘要翻译： PCT No.PCT / FR97 / 00373 Sec。 371日期1997年10月29日第 102（e）日期1997年10月29日PCT 1997年3月3日PCT公布。公开号WO97 / 33353 日期：1997年9月12日本发明涉及一种半导体光放大器。该放大器的光导结构包括矩形截面有源条纹（12）。其材料是均匀的，并且其经受足够的拉伸应变以使放大器对待放大的光的偏振不敏感。本发明在光通信中发现了一种应用。

2. 发明授权

US5916822A Method of etching a substrate by means of chemical beams 失效
标题翻译：通过化学束蚀刻基板的方法
公开(公告)号：US5916822A
公开(公告)日：1999-06-29
申请号：US694112
申请日：1996-08-08
申请人： Leon Goldstein , Jean-Louis Gentner , Philippe Jarry
发明人： Leon Goldstein , Jean-Louis Gentner , Philippe Jarry
IPC分类号： C30B23/08 , C23F4/00 , C30B23/02 , H01L21/203 , H01L21/302 , H01L21/18
CPC分类号： C30B23/02 , Y10S438/913 , Y10S438/944
摘要： In order to facilitate resuming molecular beam epitaxy after etching a substrate or an epitaxial layer, the etching method is implemented in an ultra-high vacuum, and it consists in producing at least two simultaneous chemical beams converging towards the substrate or the layer, the beams being formed of substances, each of which is capable of reacting with elements of different types in the substrate or the layer so as to form volatile compounds. Application in particular to manufacturing photonic and optoelectronic components.
摘要翻译：为了便于在蚀刻衬底或外延层之后恢复分子束外延，蚀刻方法在超高真空中实现，并且其包括产生朝向衬底或层会聚的至少两个同时化学束，由物质形成，每种物质能够在基材或层中与不同类型的元素反应，以形成挥发性化合物。特别适用于制造光子和光电子元件。

3. 发明授权

US5486489A Method of manufacturing a semiconductor component, in particular a buried ridge laser 失效
标题翻译：制造半导体元件的方法，特别是掩埋脊形激光器
公开(公告)号：US5486489A
公开(公告)日：1996-01-23
申请号：US191165
申请日：1994-02-03
申请人： Leon Goldstein , Dominique Bonnevie
发明人： Leon Goldstein , Dominique Bonnevie
IPC分类号： G02B6/13 , H01L21/20 , H01L33/00 , H01S5/00 , H01S5/227 , H01S5/30
CPC分类号： H01L33/0062 , H01S5/305 , Y10S148/095
摘要： In the method, a doped semiconductor coating is to be deposited on a disturbed surface (S) of a semiconductor base (9) doped with a dopant having the same conductivity type as the coating. According to the invention, prior to depositing a main layer (28) of the coating (10), a superdoped layer (24) is deposited, which superdoped layer has a dopant concentration that is greater than twice the mean concentration of the coating. The invention applies in particular to manufacturing a semiconductor laser for an optical fiber telecommunications system.
摘要翻译：在该方法中，掺杂半导体涂层将沉积在掺杂有与涂层相同导电类型的掺杂剂的半导体基底（9）的干扰表面（S）上。根据本发明，在沉积涂层（10）的主层（28）之前，沉积超掺杂层（24），超掺杂层的掺杂剂浓度大于涂层平均浓度的两倍。本发明特别适用于制造用于光纤通信系统的半导体激光器。

4. 发明授权

US5278858A Double channel semiconductor laser and method of fabricating it 失效
标题翻译：双通道半导体激光器及其制造方法
公开(公告)号：US5278858A
公开(公告)日：1994-01-11
申请号：US915512
申请日：1992-07-20
申请人： Francois Brillouet , Patrick Garabedian , Leon Goldstein , Philippe Pagnod-Rossiaux
发明人： Francois Brillouet , Patrick Garabedian , Leon Goldstein , Philippe Pagnod-Rossiaux
IPC分类号： H01S5/00 , H01S5/227 , H01S3/19
CPC分类号： H01S5/227 , H01S5/2277
摘要： The energization current of an indium phosphide or gallium arsenide double channel semiconductor laser is confined within a laser stripe by near and far current blocking arrangements. The near current blocking arrangements are formed by a blocking junction formed in two lateral channels delimiting the stripe. The far current blocking arrangements are formed by an iron-doped semi-insulative layer grown epitaxially before the lateral channels are etched. A particular application is to the fabrication of pump lasers used in optical amplifiers of optical fiber links.
摘要翻译：磷化铟或砷化镓双通道半导体激光器的通电电流通过近，远电流的阻挡装置被限制在激光条纹内。近电流阻塞装置由形成在限定条纹的两个横向通道中的阻挡结形成。远电流阻挡装置由在横向沟道被蚀刻之前外延生长的铁掺杂半绝缘层形成。特别的应用是制造用于光纤链路光放大器的泵激光器。

5. 发明授权

US3970597A Novel substituted polyamides and process for producing them 失效
标题翻译：新型取代聚酰胺及其制备方法
公开(公告)号：US3970597A
公开(公告)日：1976-07-20
申请号：US476320
申请日：1974-06-04
申请人： Mordechai Sokolovsky , Amihay Freeman , Leon Goldstein
发明人： Mordechai Sokolovsky , Amihay Freeman , Leon Goldstein
IPC分类号： C08G69/48 , C08G69/50 , C08G18/00
CPC分类号： C08G69/48
摘要： Novel substituted polyamides of the general formula ##EQU1## wherein A and B, which may be identical or different, are the hydrocarbon backbone groups of the formula --(CH.sub.2).sub.n --, where n is an integer, R.sub.2 and R.sub.3 are the residues of an aldehyde R.sub.2 --CHO or of an isocyanide R.sub.3 --N.tbd.C, where R.sub.2 and R.sub.3 are aliphatic, aromatic or heterocyclic residues of the respective aldehyde or isocyanide, or where R.sub.3 is a chromophoric moiety. R.sub.2 and R.sub.3 can be substituted, and amongst the possible substituents there may be R.sub.3 designating --(CH.sub.2).sub.n --NHCO--CHR.sub.2 --N(CO)(R.sub.4)--X, where R.sub.4 is the residue of a monocarboxylic or dicarboxylic acid and X is the lysyl residue of a protein, which may be biologically active, or the residue of a low-molecular weight compound containing a primary amine moiety. Preferred polyamides are various types of nylons. Amongst proteins chemically bound to the polyamide there may be mentioned enzymes, antibodies and peptide hormones. When R.sub.3 is a chromophoric moiety, the product is a chemically dyed polyamide. The invention relates also to a process for the production of such novel substituted polyamides.
摘要翻译：通式-CONH-A-CONH-B-CO-NA-CONH-B-CONH-A- | CH-R2 | CO-NH-R3的新型取代聚酰胺其中A和B可以相同或不同，是式 - （CH 2）n - 的烃主链基团，其中n是整数，R 2和R 3是醛R 2 -CHO或异氰酸酯R 3 -N N BOND C的残基，其中R 2和R 3是脂族基，相应醛或异氰化物的芳族或杂环残基，或其中R3是发色部分。 R2和R3可以被取代，并且在可能的取代基中可以有R3表示 - （CH 2）n -NHCO-CHR 2 -N（CO）（R 4）-X，其中R 4是一元羧酸或二羧酸的残基，X 是可能是生物活性的蛋白质的赖氨酰残基，或含有伯胺部分的低分子量化合物的残基。优选的聚酰胺是各种类型的尼龙。与聚酰胺化学结合的蛋白质中，可以提及酶，抗体和肽激素。当R3是发色部分时，产物是化学染色的聚酰胺。本发明还涉及生产这种新型取代的聚酰胺的方法。

6. 发明授权

US06441969B1 Prescription mirror 失效
标题翻译：处方镜
公开(公告)号：US06441969B1
公开(公告)日：2002-08-27
申请号：US09442614
申请日：1999-11-18
申请人： Leon Goldstein , Arthur Dorf
发明人： Leon Goldstein , Arthur Dorf
IPC分类号： G02B1700
CPC分类号： G02B17/08 , A45D42/00 , A45D42/02 , A45D42/10 , F21V33/004 , G02B17/0856
摘要： A common corrective eyeglass lens blank and a common mirror, Plano or magnifying, are brought together in a “compact” (small sized) construction and assembly to provide the very thing long desired in mirrors and not elsewhere found—corrected vision and ample working room between the eyes and any lenses, at the same time, at reasonable cost, in an elegance of implementation.
摘要翻译：常见的矫正眼镜镜片坯料和普通镜子或普通镜子以“紧凑型”（小尺寸）结构和组件结合在一起，以提供镜子中长期需要的东西，而不在其他地方找到矫正视力和充足的工作室在眼睛和任何镜头之间，同时，以合理的成本，优雅的实施。

7. 发明授权

US6005708A Wavelength converter for binary optical signals 失效
标题翻译：用于二进制光信号的波长转换器
公开(公告)号：US6005708A
公开(公告)日：1999-12-21
申请号：US57512
申请日：1998-04-09
申请人： Denis Leclerc , Leon Goldstein , Jean-Yves Emery , Beatrice Dagens , Christopher Janz , Michael Schilling , Klaus Wunstel
发明人： Denis Leclerc , Leon Goldstein , Jean-Yves Emery , Beatrice Dagens , Christopher Janz , Michael Schilling , Klaus Wunstel
IPC分类号： G02B6/12 , G02F2/00 , G02F2/02 , H04B10/17 , G02F1/39
CPC分类号： H04B10/2914 , G02F2/004 , G02F2001/212 , G02F2001/215 , G02F2002/006
摘要： The invention relates to wavelength converters for optical signals, as used in telecommunications, in particular for routing signals. The invention relates in particular to a wavelength converter including an interferometer structure for delivering an output optical signal, in which converter first and second branches, including at least one first semiconductor optical amplifier, are coupled to input peripheral semiconductor optical amplifiers and/or to an output peripheral semiconductor optical amplifier, wherein the structure of the active waveguide of at least one peripheral amplifier is so designed that it has a ratio of active area to confinement factor greater than that of the active waveguide of said first amplifier.
摘要翻译：本发明涉及用于光通信中的光信号的波长转换器，特别是用于路由信号。本发明具体涉及包括用于传送输出光信号的干涉仪结构的波长转换器，其中包括至少一个第一半导体光放大器的转换器第一和第二分支耦合到输入外围半导体光放大器和/或输出外围半导体光放大器，其中至少一个外围放大器的有源波导的结构被设计成使得其有效面积与约束因子的比率大于所述第一放大器的有源波导的比率。

8. 发明授权

US5707890A Method of shifting a wavelength in a semiconductor structure having quantum wells 失效
标题翻译：在具有量子阱的半导体结构中偏移波长的方法
公开(公告)号：US5707890A
公开(公告)日：1998-01-13
申请号：US409581
申请日：1995-03-24
申请人： Jean-Yves Emery , Leon Goldstein
发明人： Jean-Yves Emery , Leon Goldstein
IPC分类号： G02F2/02 , H01L29/06 , H01L29/66 , H01S3/10 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/20 , H01S5/34 , H01L21/225
CPC分类号： B82Y20/00 , H01S5/0265 , H01S5/2059 , H01S5/3413
摘要： From a top face of a semiconductor structure of the III-V type, inter-diffusion of elements between the wells and the barriers of an internal quantum structure is hot induced. The inter-diffusion is performed in one segment of the structure only, namely a segment in which the characteristic wavelength is to be shifted so as to constitute an amplitude modulator, another segment of the structure including a Bragg grating so as to constitute a laser emitter. In accordance with the invention, the inter-diffusion is induced by a layer of indium maintained in contact with the top face by means of a dielectric encapsulation layer. The invention is applicable in particular to optical telecommunications.
摘要翻译：从III-V型半导体结构的顶面，在井之间的元件和内部量子结构的势垒之间的相互扩散是热诱导的。互扩散仅在结构的一个部分中执行，即其中特征波长被移位以便构成振幅调制器的部分，该结构的另一个部分包括布拉格光栅，以便构成激光发射器。根据本发明，通过电介质封装层与保持与顶面接触的铟层引起相互扩散。本发明特别适用于光通信。

9. 发明授权

US4303786A Isonitrile derivatives of macromolecules containing hydroxyl groups 失效
标题翻译：含有羟基的大分子的异腈衍生物
公开(公告)号：US4303786A
公开(公告)日：1981-12-01
申请号：US929229
申请日：1978-07-31
申请人： Leon Goldstein , Amihay Freeman , Mordechai Sokolovsky
发明人： Leon Goldstein , Amihay Freeman , Mordechai Sokolovsky
IPC分类号： C08B15/06 , C08B37/00 , C12N11/08 , C12N11/10 , C08B37/02 , C08B11/155 , C08B31/08
CPC分类号： C08B37/00 , C08B15/06 , C12N11/08 , C12N11/10
摘要： The present invention relates to novel isocyano derivatives of linear or cross-linked, natural or synthetic macromolecules, the derivatives being of the general formula P--O--Q--NC, wherein P is the macromolecular backbone, the oxygen atom is part of the hydroxy group, Q is a group --(CH.sub.2).sub.n --wherein n is an integer of at least 3 carbon atoms, and up to about 20 carbon atoms, or Q is an aralkyl group, to a process for preparing such derivatives and to a process of linking to same biologically active proteins and to the products thus obtained.
摘要翻译：本发明涉及线型或交联天然或合成大分子的新型异氰酸衍生物，其衍生物为通式POQ-NC，其中P为高分子主链，氧原子为羟基的一部分，Q为一个 - （CH 2）n - ，其中n是至少3个碳原子的整数，以及至多约20个碳原子，或Q是一个芳烷基，用于制备这种衍生物的方法和连接到其上的方法生物活性蛋白质和由此获得的产物。

10. 发明授权

US6052398A Surface emitting semiconductor laser 失效
标题翻译：表面发射半导体激光器
公开(公告)号：US6052398A
公开(公告)日：2000-04-18
申请号：US53704
申请日：1998-04-02
申请人： Francois Brillouet , Joel Jacquet , Paul Salet , Leon Goldstein , Patrick Garabedian , Christophe Starck , Julien Boucart
发明人： Francois Brillouet , Joel Jacquet , Paul Salet , Leon Goldstein , Patrick Garabedian , Christophe Starck , Julien Boucart
IPC分类号： H01S5/00 , H01S5/042 , H01S5/183 , H01S3/19
CPC分类号： H01S5/18305 , H01S2302/00 , H01S5/18308 , H01S5/18394 , H01S5/3095
摘要： Two semiconductor layers of the laser form a tunnel junction enabling an electrical current for pumping the laser to pass from an N doped semiconductor Bragg mirror to a P doped injection layer belonging to the light-amplifying structure. The Bragg mirror co-operates with another mirror of the same type having the same doping to include said structure in an optical cavity of the laser. In a variant, the tunnel junction may be buried and located so as to constitute confinement means for said pumping current. The laser can be used in an optical fiber communications network.
摘要翻译：激光器的两个半导体层形成隧道结，能够使电流泵浦激光从N掺杂半导体布拉格反射镜传递到属于光放大结构的P掺杂注入层。布拉格反射镜与具有相同掺杂的相同类型的另一个反射镜配合，以在激光器的光腔中包括所述结构。在一个变型中，隧道结可以被埋置和定位，以便构成用于所述泵送电流的约束装置。激光可用于光纤通信网络。

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