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1. 发明授权

US5854088A Method of manufacturing a surface-emitting laser 失效
标题翻译：制造表面发射激光器的方法
公开(公告)号：US5854088A
公开(公告)日：1998-12-29
申请号：US885843
申请日：1997-06-30
申请人： Antonina Plais , Paul Salet , Joel Jacquet , Francis Poingt , Estelle Derouin
发明人： Antonina Plais , Paul Salet , Joel Jacquet , Francis Poingt , Estelle Derouin
IPC分类号： H01S5/00 , H01S5/183 , H01S5/20 , H01S5/22 , H01L21/00
CPC分类号： H01S5/18341 , H01S5/0207 , H01S5/18316 , H01S5/18338 , H01S5/2081 , H01S5/209 , H01S5/3202
摘要： In a method of fabricating a surface-emitting laser, to assure good electrical confinement and good flatness of the mirrors defining the resonant cavity of the laser an electrical confinement layer is formed by carrying out the following steps: forming an undercut layer, at least one growth step on the undercut layer, forming a mesa defining the shape and the location of the top mirror and exposing the undercut layer on its vertical walls, and controlled lateral etching of the undercut layer. Applications include the fabrication of a semiconductor laser on a III-V (e.g. InP or GaAs) substrate.
摘要翻译：在制造表面发射激光器的方法中，为了确保限定激光器的谐振腔的镜子的良好的电气限制和良好的平坦度，通过执行以下步骤形成电限制层：形成底切层，至少一个在底切层上形成生长步骤，形成限定上反射镜的形状和位置的台面，并在其垂直壁上暴露底切层，以及控制底切层的横向蚀刻。应用包括在III-V（例如InP或GaAs）衬底上制造半导体激光器。

2. 发明授权

US07968863B2 Optical device having a quantum-dot structure 有权
标题翻译：具有量子点结构的光学器件
公开(公告)号：US07968863B2
公开(公告)日：2011-06-28
申请号：US12457463
申请日：2009-06-11
申请人： François Lelarge , Benjamin Rousseau , Alain Accard , Frédéric Pommereau , Francis Poingt , Romain Brenot
发明人： François Lelarge , Benjamin Rousseau , Alain Accard , Frédéric Pommereau , Francis Poingt , Romain Brenot
IPC分类号： H01L29/06
CPC分类号： H01L29/127 , B82Y10/00 , B82Y20/00 , H01S5/3406 , H01S5/3412 , H01S5/34373 , Y10S438/962
摘要： Method of manufacturing an optical device, and an optical device, the optical device having one or more layers (13) of quantum-dots located in-between barrier layers (12). A spacer layer (15) is grown on a barrier layer (12), such that the spacer layer (15) is adapted for substantially blocking strain fields induced by quantum-dot layers, thereby producing a smooth growth front for a subsequent barrier layer (12).
摘要翻译：光学器件的制造方法和光学器件，该光学器件具有位于阻挡层（12）之间的一个或多个量子点层（13）。间隔层（15）在阻挡层（12）上生长，使得间隔层（15）适于基本上阻挡由量子点层引起的应变场，从而为随后的阻挡层产生平滑的生长前沿（ 12）。

3. 发明申请

US20090315019A1 Optical device having a quantum-dot structure 有权
标题翻译：具有量子点结构的光学器件
公开(公告)号：US20090315019A1
公开(公告)日：2009-12-24
申请号：US12457463
申请日：2009-06-11
申请人： Francois Lelarge , Benjamin Rousseau , Alain Accard , Frederic Pommereau , Francis Poingt , Romain Brenot
发明人： Francois Lelarge , Benjamin Rousseau , Alain Accard , Frederic Pommereau , Francis Poingt , Romain Brenot
IPC分类号： H01L29/12 , H01L21/02
CPC分类号： H01L29/127 , B82Y10/00 , B82Y20/00 , H01S5/3406 , H01S5/3412 , H01S5/34373 , Y10S438/962
摘要： Method of manufacturing an optical device, and an optical device, the optical device having one or more layers (13) of quantum-dots located in-between barrier layers (12). A spacer layer (15) is grown on a barrier layer (12), such that the spacer layer (15) is adapted for substantially blocking strain fields induced by quantum-dot layers, thereby producing a smooth growth front for a subsequent barrier layer (12).
摘要翻译：光学器件的制造方法和光学器件，该光学器件具有位于阻挡层（12）之间的一个或多个量子点层（13）。间隔层（15）在阻挡层（12）上生长，使得间隔层（15）适于基本上阻挡由量子点层引起的应变场，从而为随后的阻挡层产生平滑的生长前沿（ 12）。

4. 发明授权

US08948605B2 Reflective semiconductor optical amplifier for optical networks 有权
标题翻译：光网络反射半导体光放大器
公开(公告)号：US08948605B2
公开(公告)日：2015-02-03
申请号：US13698330
申请日：2011-06-16
申请人： Romain Brenot , Francis Poingt
发明人： Romain Brenot , Francis Poingt
IPC分类号： H01S5/028 , H04B10/297 , H01S5/026 , H01S5/50 , H04B10/291 , H01S5/042 , H01S5/10 , H01S3/23
CPC分类号： H04B10/2971 , H01S3/2333 , H01S5/026 , H01S5/028 , H01S5/042 , H01S5/10 , H01S5/1017 , H01S5/5027 , H04B10/291
摘要： The present document relates to passive optical networks (PON). More particularly but not exclusively, it relates to the use of a reflective semiconductor optical amplifier (RSOA) for amplifying signals in a Gigabit PON (GPON) or WDM-PON. An apparatus configured to amplify light at different wavelengths in an optical network is described. The apparatus comprises a first active material configured to amplify light at a first wavelength and a second active material configured to amplify light at a second wavelength. Furthermore, the apparatus comprises a first reflector which separates the first and second active materials and which is configured to reflect light at the first wavelength and which is configured to be substantially transparent to light at the second wavelength. In addition, the apparatus comprises a second reflector adjacent the second active material opposite to the first reflector which is configured to reflect light at the second wavelength.
摘要翻译：本文件涉及无源光网络（PON）。更具体地但不排他地涉及使用反射半导体光放大器（RSOA）来放大千兆位PON（GPON）或WDM-PON中的信号。描述了一种被配置为放大光网络中不同波长的光的装置。该装置包括配置成放大第一波长的光的第一活性材料和被配置成放大第二波长的光的第二活性材料。此外，该装置包括第一反射器，其分离第一和第二活性材料并且被配置为反射第一波长的光并被配置为对于第二波长的光是基本上透明的。此外，该装置包括与第一反射器相对的与第二活性材料相邻的第二反射器，其被配置为反射第二波长的光。

5. 发明授权

US5616522A Method of making a mark on a wafer such as a semiconductor wafer incorporating a buried structure 失效
标题翻译：在诸如包括掩埋结构的半导体晶片的晶片上制造标记的方法
公开(公告)号：US5616522A
公开(公告)日：1997-04-01
申请号：US518274
申请日：1995-08-23
申请人： Franck Mallecot , Claude Artigue , Denis LeClerc , Lionel Legouezigou , Francis Poingt , Fr ed eric Pommereau
发明人： Franck Mallecot , Claude Artigue , Denis LeClerc , Lionel Legouezigou , Francis Poingt , Fr ed eric Pommereau
IPC分类号： H01L23/544 , H01L21/027
CPC分类号： H01L23/544 , H01L2924/0002 , Y10S438/975
摘要： For end-to-end alignment of two optical waveguides one of which is in the form of a strip buried in a semiconductor wafer, a longitudinal lateral mark is used constituted by the flank of a valley etched in the wafer and self-aligned to the strip formed beforehand. To achieve this self-alignment a protection layer is deposited in the area in which the mark is to be formed, a register layer is deposited on top of the protection layer and a photosensitive resin is deposited on top of these layers and the substrate. First selective etching eliminates the register layer at the location of the valley of the mark. Second and third selective etching respectively etch the lateral channels of the strip and then the valley of the mark.
摘要翻译：对于两个光波导的端对准对准，其中一个波导是埋在半导体晶片中的条形，纵向横向标记由在晶片中蚀刻的谷的侧面构成，并与预先形成条。为了实现这种自对准，在要形成标记的区域中沉积保护层，在保护层的顶部上沉积对准层，并且在这些层和基底的顶部上沉积光敏树脂。第一选择性蚀刻消除了标记谷的位置处的寄存层。第二和第三选择性蚀刻分别蚀刻条带的横向通道，然后蚀刻标记的谷。

6. 发明授权

US5385636A Method of forming a metal contact on a projection on a semiconductor substrate 失效
标题翻译：在半导体衬底上的突起上形成金属接触的方法
公开(公告)号：US5385636A
公开(公告)日：1995-01-31
申请号：US203301
申请日：1994-03-01
申请人： Francis Poingt , Elisabeth Gaumont-Goarin , Lionel Le Gouezigou
发明人： Francis Poingt , Elisabeth Gaumont-Goarin , Lionel Le Gouezigou
IPC分类号： H01L21/28 , G03F7/38 , G03F7/40 , H01L21/027 , H01L21/308 , H01L31/10 , H01L31/107 , H01L21/312
CPC分类号： H01L21/3086 , G03F7/38 , G03F7/40 , H01L21/0274 , Y10S438/948 , Y10S438/978
摘要： A metal contact is formed by etching a metal film that is locally protected by a spot of photosensitive resin. Thereafter the resin is caused to flow in the presence of vapor of a solvent for the resin, so as to form a protective spot of increased size. This larger spot makes it possible to etch the semiconductor substrate while ensuring that the projection formed in this way is automatically aligned relative to the metal contact. The resin remains photosensitive, thereby enabling subsequent etching. The invention is particularly applicable to the manufacture of avalanche diodes.
摘要翻译：通过蚀刻由感光树脂的光点局部保护的金属膜形成金属接触。此后，在树脂溶剂的蒸气存在下使树脂流动，形成增大尺寸的保护点。这个较大的点使得可以蚀刻半导体衬底，同时确保以这种方式形成的突起相对于金属触点自动对准。树脂保持感光，从而能够进行随后的蚀刻。本发明特别适用于制造雪崩二极管。

7. 发明申请

US20130101297A1 REFLECTIVE SEMICONDUCTOR OPTICAL AMPLIFIER FOR OPTICAL NETWORKS 有权
标题翻译：用于光网络的反射半导体光放大器
公开(公告)号：US20130101297A1
公开(公告)日：2013-04-25
申请号：US13698330
申请日：2011-06-16
申请人： Romain Brenot , Francis Poingt
发明人： Romain Brenot , Francis Poingt
IPC分类号： H04B10/00 , H01S5/10 , H01S5/042
CPC分类号： H04B10/2971 , H01S3/2333 , H01S5/026 , H01S5/028 , H01S5/042 , H01S5/10 , H01S5/1017 , H01S5/5027 , H04B10/291
摘要： The present document relates to passive optical networks (PON). More particularly but not exclusively, it relates to the use of a reflective semiconductor optical amplifier (RSOA) for amplifying signals in a Gigabit PON (GPON) or WDM-PON. An apparatus configured to amplify light at different wavelengths in an optical network is described. The apparatus comprises a first active material configured to amplify light at a first wavelength and a second active material configured to amplify light at a second wavelength. Furthermore, the apparatus comprises a first reflector which separates the first and second active materials and which is configured to reflect light at the first wavelength and which is configured to be substantially transparent to light at the second wavelength. In addition, the apparatus comprises a second reflector adjacent the second active material opposite to the first reflector which is configured to reflect light at the second wavelength.
摘要翻译：本文件涉及无源光网络（PON）。更具体地但不排他地涉及使用反射半导体光放大器（RSOA）来放大千兆位PON（GPON）或WDM-PON中的信号。描述了一种被配置为放大光网络中不同波长的光的装置。该装置包括配置成放大第一波长的光的第一活性材料和被配置成放大第二波长的光的第二活性材料。此外，该装置包括第一反射器，其分离第一和第二活性材料并且被配置为反射第一波长的光并被配置为对于第二波长的光是基本上透明的。此外，该装置包括与第一反射器相对的与第二活性材料相邻的第二反射器，其被配置为反射第二波长的光。

8. 发明授权

US06584807B1 Method of fabricating a component with crystalline silicon substrate 失效
标题翻译：用晶体硅衬底制造组件的方法
公开(公告)号：US06584807B1
公开(公告)日：2003-07-01
申请号：US08822642
申请日：1997-03-24
申请人： Denis Tregoat , Claude Artigue , Christian Brot , Franck Mallecot , Francis Poingt
发明人： Denis Tregoat , Claude Artigue , Christian Brot , Franck Mallecot , Francis Poingt
IPC分类号： C03B2000
CPC分类号： H01L21/316 , G02B6/122 , G02B6/134 , G02B6/30 , G02B2006/12176
摘要： A method of fabricating a component having a crystalline silicon substrate includes the steps of depositing a layer of silica onto a crystalline silicon substrate, this silica layer being doped with dopants, and then treating the substrate. Before the doped silica layer is deposited, a barrier layer is formed on the substrate, consisting of a barrier material opposing diffusion of the dopants. The doped silica layer is deposited onto this barrier layer. The invention finds one particular application in connecting flat bundles of fibers in communication networks.
摘要翻译：制造具有晶体硅衬底的部件的方法包括以下步骤：在结晶硅衬底上沉积二氧化硅层，该二氧化硅层掺杂有掺杂剂，然后处理衬底。在沉积掺杂二氧化硅层之前，在由与掺杂剂扩散相反的阻挡材料组成的衬底上形成阻挡层。掺杂的二氧化硅层沉积在该阻挡层上。本发明在通信网络中连接扁平的光纤束方面发现了一个特殊的应用。

9. 发明授权

US5283209A Method of localized treatment on a projection, in particular for lithographic etching on a semiconductor substrate 失效
标题翻译：对投影进行局部处理的方法，特别是用于在半导体衬底上的光刻蚀刻
公开(公告)号：US5283209A
公开(公告)日：1994-02-01
申请号：US824259
申请日：1992-01-17
申请人： Francis Poingt , Jean-Louis Lievin , Elisabeth Gaumont-Goarin
发明人： Francis Poingt , Jean-Louis Lievin , Elisabeth Gaumont-Goarin
IPC分类号： H01L21/302 , G03F7/40 , H01L21/027 , H01L21/3065 , H01L21/3105 , H01S5/00
CPC分类号： H01L21/0274 , G03F7/40 , H01L21/31058 , Y10S438/94 , Y10S438/948
摘要： In the method, a protective resist (108) used for lithographic etching is caused to flow plastically under the constraint of its surface tension, thereby increasing its thickness around a projection (106) on which a window (104) is to be formed. The invention is particularly applicable to manufacturing semiconductor lasers.
摘要翻译：在该方法中，用于光刻蚀刻的保护抗蚀剂（108）在其表面张力的约束下被塑性流动，从而增加其周围将要形成窗口（104）的突起（106）的厚度。本发明特别适用于制造半导体激光器。

10. 发明授权

US5215939A Method of manufacturing a planar buried heterojunction laser 失效
标题翻译：制造平面波导异常激光的方法
公开(公告)号：US5215939A
公开(公告)日：1993-06-01
申请号：US832024
申请日：1992-02-06
申请人： Leon Goldstein , Dominique Bonnevie , Francois Brillouet , Francis Poingt , Jean-Louis Lievin
发明人： Leon Goldstein , Dominique Bonnevie , Francois Brillouet , Francis Poingt , Jean-Louis Lievin
IPC分类号： H01S5/00 , H01S5/20 , H01S5/227
CPC分类号： H01S5/227 , H01S5/2081 , H01S5/2275 , Y10S148/09 , Y10S148/10
摘要： In a method of manufacturing a planar buried heterojunction laser, after etching to delimit a laser stripe in relief on a substrate, lateral layers to surround the stripe are formed by a non-selective growth method not only at the sides of the stripe but also above it to create a parasitic projection. This projection is then removed after separation from the substrate by selective attack of a lift-off stripe which was deposited for this purpose above the stripe prior to this etching. Passages are formed for the attack medium used for this purpose. The invention can be applied in particular to the manufacture of fiber optic transmission systems.
摘要翻译：在制造平面埋入异质结激光器的方法中，在蚀刻以限定基板上的激光条纹之后，不仅在条纹侧面而且在上方都通过非选择性生长方法形成围绕条纹的横向层它创建一个寄生投影。然后通过选择性地攻击在该蚀刻之前在条纹上方沉积的剥离条纹从衬底分离之后，去除该突起。形成用于此目的的攻击介质的通道。本发明可以特别应用于光纤传输系统的制造。

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