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1. 发明授权

US09941662B2 Light-emitting element and method for manufacturing the same 有权
公开(公告)号：US09941662B2
公开(公告)日：2018-04-10
申请号：US15272181
申请日：2016-09-21
申请人： Sony Corporation
发明人： Tomoyuki Oki , Yuji Masui , Yoshinori Yamauchi , Rintaro Koda , Takahiro Arakida
IPC分类号： H01S5/00 , H01S5/183 , H01S5/22 , H01S5/343 , H01S5/223 , H01S5/187 , H01S5/022 , B82Y20/00 , H01S5/042 , H01S5/18 , H01S5/125
CPC分类号： H01S5/18308 , B82Y20/00 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/125 , H01S5/18 , H01S5/18311 , H01S5/18338 , H01S5/187 , H01S5/22 , H01S5/221 , H01S5/2231 , H01S5/343 , H01S5/34313 , H01S5/3432 , H01S2301/176 , H01S2301/18
摘要： A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

2. 发明授权

US09484713B2 Light-emitting element and method for manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US09484713B2
公开(公告)日：2016-11-01
申请号：US14735755
申请日：2015-06-10
申请人： Sony Corporation
发明人： Tomoyuki Oki , Yuji Masui , Yoshinori Yamauchi , Rintaro Koda , Takahiro Arakida
IPC分类号： H01S5/00 , H01L33/44 , H01L33/32 , H01S5/125 , B82Y20/00 , H01S5/022 , H01S5/042 , H01S5/18 , H01S5/187 , H01S5/183 , H01S5/22 , H01S5/223 , H01S5/343
CPC分类号： H01S5/18308 , B82Y20/00 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/125 , H01S5/18 , H01S5/18311 , H01S5/18338 , H01S5/187 , H01S5/22 , H01S5/221 , H01S5/2231 , H01S5/343 , H01S5/34313 , H01S5/3432 , H01S2301/176 , H01S2301/18
摘要： A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.
摘要翻译：发光元件包括台状结构，其中第一导电类型的第一化合物半导体层，有源层和第二导电类型的第二化合物半导体层以该顺序设置，其中第一化合物半导体层和第二化合物半导体层具有由从台面结构的侧壁部向内延伸的绝缘区域包围的电流收缩区域; 设置成围绕台面结构的壁结构; 连接台面结构和壁结构的至少一个桥结构，壁结构和桥结构各自具有与设置绝缘区域的台面结构部分相同的层结构; 第一电极; 以及设置在所述壁结构的顶面上的第二电极。

3. 发明授权

US09397478B2 Vertical cavity surface emitting laser and atomic oscillator 有权
标题翻译：垂直腔表面发射激光和原子振荡器
公开(公告)号：US09397478B2
公开(公告)日：2016-07-19
申请号：US14576675
申请日：2014-12-19
申请人： Seiko Epson Corporation
发明人： Satoshi Takenaka , Yuji Kurachi
IPC分类号： H01S5/00 , H01S5/183 , H01S5/042 , G04F5/14 , H01S5/32 , H01S5/022 , H01S5/0687 , H01S5/062
CPC分类号： H01S5/183 , G04F5/145 , H01S5/02276 , H01S5/0425 , H01S5/0623 , H01S5/0687 , H01S5/18311 , H01S5/18338 , H01S5/18347 , H01S5/1835 , H01S5/18352 , H01S5/18355 , H01S5/18372 , H01S5/3201 , H01S2301/176
摘要： A vertical cavity surface emitting laser includes: a substrate; a laminated body which is provided over the substrate; an electrode of which at least a portion is provided over the laminated body; and a pad which is connected to the electrode, wherein the laminated body includes a first mirror layer provided over the substrate, an active layer provided over the first mirror layer, and a second mirror layer provided over the active layer, in a plan view, the laminated body includes a first distortion imparting portion, a second distortion imparting portion, and a resonance portion which is provided between the first distortion imparting portion and the second distortion imparting portion and resonates light generated in the active layer, and in the plan view, the pad is provided in a position that is not overlapped with at least one of the first distortion imparting portion and the second distortion imparting portion.
摘要翻译：垂直腔表面发射激光器包括：衬底; 设置在基板上的层叠体; 在层叠体上设置有至少一部分的电极; 以及连接到所述电极的焊盘，其中所述层叠体包括设置在所述基板上的第一反射镜层，设置在所述第一镜面层上的有源层，以及设置在所述有源层上的第二镜像层，层叠体包括第一变形赋予部，第二变形赋予部以及设置在第一变形赋予部和第二变形赋予部之间的谐振部，并且谐振在有源层中产生的光，在俯视图中，衬垫设置在与第一变形赋予部和第二变形赋予部中的至少一个不重叠的位置。

4. 发明申请

US20150349494A1 LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：发光元件及其制造方法
公开(公告)号：US20150349494A1
公开(公告)日：2015-12-03
申请号：US14823868
申请日：2015-08-11
申请人： Sony Corporation
发明人： Tomoyuki Oki , Yuji Masui , Yoshinori Yamauchi , Rintaro Koda , Takahiro Arakida
IPC分类号： H01S5/187 , H01S5/022 , H01S5/042 , H01S5/343 , H01S5/183
CPC分类号： H01S5/18308 , B82Y20/00 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/125 , H01S5/18 , H01S5/18311 , H01S5/18338 , H01S5/187 , H01S5/22 , H01S5/221 , H01S5/2231 , H01S5/343 , H01S5/34313 , H01S5/3432 , H01S2301/176 , H01S2301/18
摘要： A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.
摘要翻译：发光元件包括台面结构，其中第一导电类型的第一化合物半导体层，有源层和第二导电类型的第二化合物半导体层以该顺序设置，其中第一化合物半导体层和第二化合物半导体层具有由从台面结构的侧壁部向内延伸的绝缘区域包围的电流收缩区域; 设置成围绕台面结构的壁结构; 连接台面结构和壁结构的至少一个桥结构，壁结构和桥结构各自具有与设置绝缘区域的台面结构部分相同的层结构; 第一电极; 以及设置在所述壁结构的顶面上的第二电极。

5. 发明申请

US20150180211A1 VERTICAL CAVITY SURFACE EMITTING LASER AND ATOMIC OSCILLATOR 有权
标题翻译：垂直孔表面发射激光和原子振荡器
公开(公告)号：US20150180211A1
公开(公告)日：2015-06-25
申请号：US14575071
申请日：2014-12-18
申请人： Seiko Epson Corporation
发明人： Yasutaka IMAI
IPC分类号： H01S5/42
CPC分类号： H01S5/42 , H01S5/0425 , H01S5/18311 , H01S5/18313 , H01S5/18327 , H01S5/18338 , H01S5/18341 , H01S5/18347 , H01S5/1835 , H01S5/18352 , H01S5/18355 , H01S5/3201 , H01S2301/176
摘要： A vertical cavity surface emitting laser includes: a substrate; and a laminated body which is provided over the substrate, wherein the laminated body includes a first mirror layer, an active layer, and a second mirror layer, in a plan view, the laminated body includes a first distortion imparting portion, a second distortion imparting portion, and a resonance portion which is provided between the first distortion imparting portion and the second distortion imparting portion and resonates light generated by the active layer, and an angle formed by a side surface of the first distortion imparting portion and an upper surface of the substrate, and an angle formed by a side surface of the second distortion imparting portion and the upper surface of the substrate are greater than an angle formed by a side surface of the resonance portion and the upper surface of the substrate.
摘要翻译：垂直腔表面发射激光器包括：衬底; 以及设置在所述基板上的层叠体，其中，所述层叠体包括第一镜面层，有源层和第二镜面层，在俯视图中，所述层叠体包括第一变形赋予部，第二变形赋予所述谐振部分设置在所述第一变形赋予部分和所述第二变形赋予部分之间并且谐振由所述有源层产生的光，并且由所述第一变形赋予部分的侧表面和所述第一变形赋予部分的上表面形成的角度基板，并且由第二变形赋予部分的侧表面和基板的上表面形成的角度大于由共振部分的侧表面和基板的上表面形成的角度。

6. 发明授权

US08937982B2 Surface-emitting laser element, surface-emitting laser array, optical scanning apparatus, image forming apparatus, and method of manufacturing surface-emitting laser element 有权
标题翻译：表面发射激光元件，表面发射激光器阵列，光学扫描装置，成像装置和制造表面发射激光元件的方法
公开(公告)号：US08937982B2
公开(公告)日：2015-01-20
申请号：US13258596
申请日：2010-05-26
申请人： Yasuhiro Higashi , Kazuhiro Harasaka
发明人： Yasuhiro Higashi , Kazuhiro Harasaka
IPC分类号： B41J2/45 , H01S5/00 , H01S5/183 , H01S5/42 , H04N1/024 , H01S5/028 , H01S5/042 , H01S5/32 , H01S5/343
CPC分类号： H01S5/0042 , B82Y20/00 , H01S5/0282 , H01S5/0425 , H01S5/18313 , H01S5/18333 , H01S5/18338 , H01S5/1835 , H01S5/18355 , H01S5/3202 , H01S5/3434 , H01S5/3436 , H01S5/423 , H01S2301/166 , H01S2301/176 , H04N1/024
摘要： A method of manufacturing a surface-emitting laser element having a light-emitting mesa structure with an emitting area including a high-reflectance portion and a low-reflectance portion includes forming a layered body that includes a lower reflecting mirror, a cavity structure, and an upper reflecting mirror on a substrate; forming a first area on an upper surface of the layered body; forming a second area having the same size as the first area on the upper surface of the layered body; forming a light-emitting mesa structure and a monitoring-mesa structure by etching the first area and the second area, respectively; forming a confinement structure including a current passage area surrounded by an oxide in the light-emitting mesa structure and the monitoring-mesa structure; and measuring the size of the current passage area of the monitoring-mesa structure.
摘要翻译：一种具有发光台面结构的表面发射激光器元件的制造方法，具有包括高反射部分和低反射部分的发射区域，包括形成包括下反射镜，空腔结构和在基板上的上反射镜; 在层叠体的上表面上形成第一区域; 形成与层叠体的上表面上的第一区域相同尺寸的第二区域; 通过蚀刻第一区域和第二区域来分别形成发光台面结构和监视台面结构; 形成包含由发光台面结构中的氧化物包围的电流通道区域和监测台面结构的约束结构; 并测量监测台面结构的当前通过面积的大小。

7. 发明授权

US08576890B2 Vertical-cavity surface-emitting laser 有权
标题翻译：垂直腔表面发射激光器
公开(公告)号：US08576890B2
公开(公告)日：2013-11-05
申请号：US12767474
申请日：2010-04-26
申请人： David A. Fattal , Raymond G. Beausoleil , Sagi Varghese Mathai
发明人： David A. Fattal , Raymond G. Beausoleil , Sagi Varghese Mathai
IPC分类号： H01S5/00
CPC分类号： H01S5/18391 , H01S5/18338 , H01S5/18355 , H01S5/18363 , H01S5/18386 , H01S5/18394 , H01S2301/20
摘要： A VCSEL includes a grating layer configured with a non-periodic, sub-wavelength grating, in which the non-periodic, sub-wavelength grating includes at least one first section configured to have a relatively low reflection coefficient and at least one second section configured to have a relatively high reflection coefficient to cause light to be reflected in a predetermined, non-Gaussian, spatial mode across the sub-wavelength grating. The VCSEL also includes a reflective layer and a light emitting layer disposed between the grating layer and the reflector, in which the sub-wavelength grating and the reflector form a resonant cavity.
摘要翻译： VCSEL包括配置有非周期性亚波长光栅的光栅层，其中非周期性亚波长光栅包括被配置为具有相对较低反射系数的至少一个第一部分和至少一个第二部分配置具有相对较高的反射系数，以使光以跨过子波长光栅的预定非高斯空间模式反射。 VCSEL还包括反射层和设置在光栅层和反射器之间的发光层，其中亚波长光栅和反射器形成谐振腔。

8. 发明申请

US20130195135A1 SURFACE EMITTING LASER 有权
标题翻译：表面发射激光
公开(公告)号：US20130195135A1
公开(公告)日：2013-08-01
申请号：US13750141
申请日：2013-01-25
申请人： CANON KABUSHIKI KAISHA
发明人： Tatsuro Uchida , Yasuhisa Inao
IPC分类号： H01S5/00
CPC分类号： H01S5/18 , B82Y20/00 , G03G15/04072 , H01S5/18311 , H01S5/18338 , H01S5/18391 , H01S5/209 , H01S5/3202 , H01S5/34326 , H01S2301/166
摘要： A surface emitting laser having a mesa structure includes an off-orientation substrate, a bottom reflection mirror, an active layer, a current confinement layer, a top reflection mirror, and a surface-relief structure. The central axis of a high-reflectivity region of the surface-relief structure and the central axis of the mesa structure do not coincide with each other.
摘要翻译：具有台面结构的表面发射激光器包括偏转衬底，底部反射镜，有源层，电流限制层，顶部反射镜和表面浮雕结构。表面浮雕结构的高反射率区域和台面结构的中心轴的中心轴线彼此不一致。

9. 发明申请

US20110176572A1 VCSEL WITH NON-CIRCULAR MESA AND CURRENT CONFINEMENT APERTURE FOR HIGHER-ORDER LATERAL MODE EMISSION 有权
标题翻译：具有非圆形MESA的VCSEL和用于高阶侧向模式排放的当前配置孔
公开(公告)号：US20110176572A1
公开(公告)日：2011-07-21
申请号：US13121885
申请日：2009-09-30
申请人： Michael Moser , Sven Eitel , Wolfgang Kaiser
发明人： Michael Moser , Sven Eitel , Wolfgang Kaiser
IPC分类号： H01S5/183 , H01L21/306 , H01S5/20
CPC分类号： H01S5/18338 , H01S5/0655 , H01S5/18311 , H01S5/1835 , H01S5/18355 , H01S5/2086 , H01S2301/166
摘要： A vertical cavity surface emitting laser (VCSEL) (100) has a substrate (104), on which are disposed first and second distributed Bragg reflectors (DBRs) (106, 112), each DBR comprising a stack of layers of alternating refractive index, an active layer (108) disposed between the DBRs, and an aperture layer (110) disposed either between the DBRs or within one of the DBRs. The aperture layer (110) has a border (116) having an internal boundary with a plurality of indented portions defining one or more apertures. Such a VCSEL is easily manufacturable and provides a narrow bandwidth output, as well as mitigating at least some of the problems of prior art VCSELs. Mesa (102) may be etched to be non-circular and subsequent selective oxidation of aperture layer (110) results in a non-circular current confinement aperture (114) promoting higher-order lateral modes (LP21).
摘要翻译：垂直腔表面发射激光器（VCSEL）（100）具有衬底（104），其上设置有第一和第二分布式布拉格反射器（DBD）（106,112），每个DBR包括交替折射率层的叠层，布置在DBR之间的有源层（108）和布置在DBR之间或在一个DBR内的孔层（110）。开口层（110）具有边界（116），边界具有限定一个或多个孔的多个凹口部分的内部边界。这样的VCSEL容易制造并且提供窄带宽输出，以及减轻现有技术VCSEL的至少一些问题。可以将台面（102）蚀刻成非圆形，随后孔径层（110）的选择性氧化导致促进高阶侧向模式（LP21）的非圆形电流限制孔（114）。

10. 发明授权

US07885307B2 Vertical-cavity surface-emitting semiconductor laser device 有权
标题翻译：垂直腔表面发射半导体激光器件
公开(公告)号：US07885307B2
公开(公告)日：2011-02-08
申请号：US11551101
申请日：2006-10-19
申请人： Kinuka Tanabe , Yoshihiko Ikenaga , Norihiro Iwai , Takeo Kageyama , Koji Hiraiwa , Hirokazu Yoshikawa
发明人： Kinuka Tanabe , Yoshihiko Ikenaga , Norihiro Iwai , Takeo Kageyama , Koji Hiraiwa , Hirokazu Yoshikawa
IPC分类号： H01S5/00
CPC分类号： H01S5/1835 , H01S5/0425 , H01S5/18311 , H01S5/18338 , H01S5/18341 , H01S5/18369 , H01S5/3202
摘要： A vertical-cavity surface-emitting (VCSEL) device has a layer structure including a top DBR mirror, an active layer, a current confinement oxide layer, and a bottom DBR mirror, the layer structure being configured as a mesa post. The current confinement oxide layer has a central current injection area and a peripheral current blocking area oxidized from the sidewall of the mesa post. The mesa post has a substantially square cross-sectional shape, thereby allowing an oxidation heat treatment to configure a substantially circular current injection area in the current-confinement oxide layer.
摘要翻译：垂直腔表面发射（VCSEL）器件具有包括顶部DBR镜，有源层，电流限制氧化物层和底部DBR镜的层结构，该层结构被配置为台面柱。电流限制氧化物层具有从台面柱的侧壁氧化的中心电流注入区域和外围电流阻挡区域。台面柱具有基本上正方形的横截面形状，从而允许氧化热处理在电流限制氧化物层中构造基本上圆形的电流注入区域。

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