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1. 发明授权

US6052398A Surface emitting semiconductor laser 失效
标题翻译：表面发射半导体激光器
公开(公告)号：US6052398A
公开(公告)日：2000-04-18
申请号：US53704
申请日：1998-04-02
申请人： Francois Brillouet , Joel Jacquet , Paul Salet , Leon Goldstein , Patrick Garabedian , Christophe Starck , Julien Boucart
发明人： Francois Brillouet , Joel Jacquet , Paul Salet , Leon Goldstein , Patrick Garabedian , Christophe Starck , Julien Boucart
IPC分类号： H01S5/00 , H01S5/042 , H01S5/183 , H01S3/19
CPC分类号： H01S5/18305 , H01S2302/00 , H01S5/18308 , H01S5/18394 , H01S5/3095
摘要： Two semiconductor layers of the laser form a tunnel junction enabling an electrical current for pumping the laser to pass from an N doped semiconductor Bragg mirror to a P doped injection layer belonging to the light-amplifying structure. The Bragg mirror co-operates with another mirror of the same type having the same doping to include said structure in an optical cavity of the laser. In a variant, the tunnel junction may be buried and located so as to constitute confinement means for said pumping current. The laser can be used in an optical fiber communications network.
摘要翻译：激光器的两个半导体层形成隧道结，能够使电流泵浦激光从N掺杂半导体布拉格反射镜传递到属于光放大结构的P掺杂注入层。布拉格反射镜与具有相同掺杂的相同类型的另一个反射镜配合，以在激光器的光腔中包括所述结构。在一个变型中，隧道结可以被埋置和定位，以便构成用于所述泵送电流的约束装置。激光可用于光纤通信网络。

2. 发明授权

US06609839B1 Device including a saturable absorber for regenerating a wavelength-division multiplex signal 失效
标题翻译：装置包括用于再生波分复用信号的可饱和吸收器
公开(公告)号：US06609839B1
公开(公告)日：2003-08-26
申请号：US09411228
申请日：1999-10-04
申请人： Fabrice Devaux , Alexandre Shen , Philippe Pagnod-Rossiaux , Paul Salet , Christophe Starck
发明人： Fabrice Devaux , Alexandre Shen , Philippe Pagnod-Rossiaux , Paul Salet , Christophe Starck
IPC分类号： H01S330
CPC分类号： G02F1/3523 , B82Y20/00 , G02F1/017 , G02F1/17
摘要： In a device for regenerating a wavelength-division multiplex optical signal, the optical signal to be regenerated comes from an optical fiber and is injected back into the same optical fiber or into another fiber. The device comprises at least one dispersive medium for receiving the wavelength-division multiplex signal and emitting a corresponding dispersed wave into a free space and a saturable absorber which receives the dispersed wave and transmits a corresponding regenerated wave.
摘要翻译：在用于再生波分复用光信号的装置中，要再生的光信号来自光纤，并且被注入到相同的光纤或另一光纤中。该装置包括用于接收波分复用信号并将相应的分散波发射到自由空间中的至少一个分散介质和接收分散波并传输相应的再生波的可饱和吸收体。

3. 发明授权

US5920419A Quantum well electro-optical modulator 失效
标题翻译：量子阱电光调制器
公开(公告)号：US5920419A
公开(公告)日：1999-07-06
申请号：US847629
申请日：1997-04-28
申请人： Christophe Starck , Dominique Lesterlin
发明人： Christophe Starck , Dominique Lesterlin
IPC分类号： G02F1/025 , G02F1/017 , G02F1/03
CPC分类号： B82Y20/00 , G02F1/01708
摘要： In order to operate at high frequencies and at high optical powers without reducing the possible depth of modulation, a quantum well electro-optical modulator has a semiconductor structure of III-V elements including, in succession, an n doped layer, an undoped layer, a quantum well active layer and a p doped layer. Applications include optical transmission systems.
摘要翻译：为了在高频率和高光功率下工作而不降低可能的调制深度，量子阱电光调制器具有III-V族元素的半导体结构，其包括n掺杂层，未掺杂层，量子阱有源层和ap掺杂层。应用包括光传输系统。

4. 发明授权

US06807212B2 Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US06807212B2
公开(公告)日：2004-10-19
申请号：US10283133
申请日：2002-10-30
申请人： Mauro Bettiati , Christophe Starck , Stéphane Lovisa
发明人： Mauro Bettiati , Christophe Starck , Stéphane Lovisa
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/2004 , H01S5/305 , H01S5/3409 , H01S5/3432 , H01S2301/18
摘要： The present invention provides a vertical structure semiconductor laser comprising bottom and top cladding layers (1, 2), a light guide (G) superposed on the bottom cladding layer, and a semiconductor active layer (CA). In the invention, the light guide (G) further comprises: a semiconductor bottom guide layer (11) having the following two adjacent bottom parts: an undoped first bottom part (11a) adjacent the central region, and an n-type doped second bottom part (11b) adjacent the bottom cladding layer, a semiconductor top guide layer (12) having the following two adjacent top parts: an undoped first top part (12a) adjacent the central region, and a p-type doped second top part (12b) adjacent the top cladding layer. The first bottom and top parts form a non-doped region (ND) more than 0.5 &mgr;m thick, and the refractive index difference (&Dgr;nopt) between one or each of the cladding layers and the adjacent guide layer is less than 0.02.
摘要翻译：本发明提供了一种垂直结构半导体激光器，其包括叠层在底部包层上的底部和顶部覆层（1,2），导光体（G）和半导体活性层（CA）。在本发明中，导光体（G）还包括：具有以下两个相邻底部的半导体底部引导层（11）：邻近中心区域的未掺杂的第一底部部分（11a），以及n型掺杂的第二底部部分（11b），具有以下两个相邻顶部的半导体顶部引导层（12）：邻近所述中心区域的未掺杂的第一顶部部分（12a）和相邻的p型掺杂的第二顶部部分（12b）第一底部和顶部形成大于0.5μm厚的非掺杂区域（ND），并且一个或每个包覆层和相邻引导层之间的折射率差（Deltanopt）小于 0.02。

5. 发明授权

US6071829A Method of fabricating semiconductor components 失效
标题翻译：制造半导体元件的方法
公开(公告)号：US6071829A
公开(公告)日：2000-06-06
申请号：US99950
申请日：1998-06-19
申请人： Christophe Starck , Lionel Le Gouezigou
发明人： Christophe Starck , Lionel Le Gouezigou
IPC分类号： C23F4/00 , G01B11/06 , H01L21/302 , H01L21/3065 , H01L21/66 , H01L21/461
CPC分类号： B24B37/013 , G01B11/0616 , H01L22/26
摘要： A method of fabricating a semiconductor component, the method including at least one step of etching an upper layer formed on a substrate. In the method, prior to forming the upper layer, at least one set made up of marker layers separated by intermediate layers of predetermined thicknesses is caused to be grown, where the marker layers and adjacent intermediate layers have different refractive indices, and then during etching of the upper layer refractive index discontinuities are detected optically and etching is stopped when the sequence of the optically detected discontinuities corresponds to a reference sequence representative of the thicknesses of the intermediate layers.
摘要翻译：一种制造半导体部件的方法，所述方法包括蚀刻形成在基板上的上层的至少一个步骤。在该方法中，在形成上层之前，使由由预定厚度的中间层隔开的标记层组成的至少一个组生长，其中标记层和相邻中间层具有不同的折射率，然后在蚀刻期间当光学检测到的不连续的序列对应于代表中间层的厚度的参考序列时，光学检测上层折射率不连续性，并停止蚀刻。

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