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1. 发明授权

US06570253B1 Multi-layer film for a thin film structure and a capacitor using the same 有权
标题翻译：用于薄膜结构的多层膜和使用其的电容器
公开(公告)号：US06570253B1
公开(公告)日：2003-05-27
申请号：US09686623
申请日：2000-10-12
申请人： Jae-soon Lim , Yeong-kwan Kim , Heung-soo Park , Sang-in Lee
发明人： Jae-soon Lim , Yeong-kwan Kim , Heung-soo Park , Sang-in Lee
IPC分类号： H01G904
CPC分类号： H01L28/40 , H01L21/3142 , H01L21/31604 , H01L21/31616
摘要： A multi-layer film for a thin film structure, a capacitor using the multi-layer film and methods for fabricating the multi-layer film and the capacitor, the multi-layer film including a composition transition layer between a lower material layer and an upper material layer respectively formed of different elements whose interaction parameters are different from each other, the composition transition layer containing both elements of the lower and upper material layers, the concentration of the composition transition layer gradually varying from the portion of the composition transition layer contacting with the lower material layer to the portion of the composition transition layer contacting with the upper material layer such that the concentration of the element of the upper material layer is relatively large in its portion adjacent to the upper material layer, each of the lower and upper material layers being formed of an oxide or nitride material of aluminum, silicon, zirconium, cerium, titanium, yttrium, tantalum or niobium.
摘要翻译：用于薄膜结构的多层膜，使用该多层膜的电容器以及制造多层膜和电容器的方法，所述多层膜包括在下层材料层和上层之间的组成过渡层分别由相互作用参数彼此不同的不同元素形成的材料层，组成过渡层包含下部和上部材料层的两个元素，组成过渡层的浓度从组成过渡层的部分逐渐变化，下部材料层到组合物过渡层的与上部材料层接触的部分，使得上部材料层的元素的浓度在与上部材料层相邻的部分中相对较大，每个下部和上部材料层由铝，硅，锆，铈的氧化物或氮化物材料形成钛，钛，钇，钽或铌。

2. 发明授权

US07052918B2 Multi-layer film for thin film structure, capacitor using the same and fabrication method thereof 有权
公开(公告)号：US07052918B2
公开(公告)日：2006-05-30
申请号：US10410341
申请日：2003-04-10
申请人： Jae-soon Lim , Yeong-kwan Kim , Heung-soo Park , Sang-in Lee
发明人： Jae-soon Lim , Yeong-kwan Kim , Heung-soo Park , Sang-in Lee
IPC分类号： H01L21/8242
CPC分类号： H01L28/40 , H01L21/3142 , H01L21/31604 , H01L21/31616
摘要： A multi-layer film for a thin film structure, a capacitor using the multi-layer film and methods for fabricating the multi-layer film and the capacitor, the multi-layer film including a composition transition layer between a lower material layer and an upper material layer respectively formed of different elements whose interaction parameters are different from each other, the composition transition layer containing both elements of the lower and upper material layers, the concentration of the composition transition layer gradually varying from the portion of the composition transition layer contacting with the lower material layer to the portion of the composition transition layer contacting with the upper material layer such that the concentration of the element of the upper material layer is relatively large in its portion adjacent to the upper material layer, each of the lower and upper material layers being formed of an oxide or nitride material of aluminum, silicon, zirconium, cerium, titanium, yttrium, tantalum or niobium.

3. 发明授权

US06576053B1 Method of forming thin film using atomic layer deposition method 有权
标题翻译：使用原子层沉积法形成薄膜的方法
公开(公告)号：US06576053B1
公开(公告)日：2003-06-10
申请号：US09679559
申请日：2000-10-06
申请人： Yeong-kwan Kim , Young-wook Park , Jae-soon Lim , Sung-je Choi , Sang-in Lee
发明人： Yeong-kwan Kim , Young-wook Park , Jae-soon Lim , Sung-je Choi , Sang-in Lee
IPC分类号： C30B2504
CPC分类号： H01L21/31691 , C30B25/02 , C30B29/20 , H01L21/316
摘要： In a method of forming a thin film using an atomic layer deposition (ALD) method, a thin film is formed on a substrate in cycles. Each cycle includes injecting a first reactant including an atom that forms the thin film and a ligand into a reaction chamber that includes the substrate, purging the first reactant, injecting a second reactant into the reaction chamber, and purging the second reactant. The thin film is formed by a chemical reaction between the atom that forms the thin film and a second reactant whose binding energy with respect to the atom that forms the thin film is larger than the binding energy of the ligand with respect to the atom that forms the thin film and the generation of by-products is prevented. The generation of a hydroxide by-product in the thin film is suppressed by using a material that does not include a hydroxide as the second reactant, purging the second reactant, and reacting the second reactant with a third reactant that includes hydroxide. After purging the second reactant, the third reactant for removing impurities and improving the stoichiometry of the thin film is injected and purged. In this way, it is possible to obtain a thin film that does not include impurities and whose stoichiometry is excellent.
摘要翻译：在使用原子层沉积（ALD）法形成薄膜的方法中，在基板上循环形成薄膜。每个循环包括将包括形成薄膜的原子和配体的第一反应物注入到包括基板的反应室中，清洗第一反应物，将第二反应物注入反应室，以及清除第二反应物。薄膜由形成薄膜的原子与第二反应物之间的化学反应形成，第二反应物的结合能相对于形成薄膜的原子的结合能大于配体相对于形成的原子的结合能防止了薄膜和副产物的产生。通过使用不包含氢氧化物作为第二反应物的材料，吹扫第二反应物，并使第二反应物与包含氢氧化物的第三反应物反应，可以抑制薄膜中氢氧化物副产物的产生。在清洗第二反应物之后，注入和清除用于除去杂质的第三反应物和改善薄膜的化学计量。以这种方式，可以获得不含杂质的化学计量优异的薄膜。

4. 发明授权

US06207487B1 Method for forming dielectric film of capacitor having different thicknesses partly 失效
标题翻译：部分形成不同厚度的电容器的电介质膜的形成方法
公开(公告)号：US06207487B1
公开(公告)日：2001-03-27
申请号：US09415830
申请日：1999-10-12
申请人： Yeong-kwan Kim , Sang-in Lee , Chang-soo Park , Young-sun Kim
发明人： Yeong-kwan Kim , Sang-in Lee , Chang-soo Park , Young-sun Kim
IPC分类号： H01L218244
CPC分类号： H01L28/40 , H01L21/02178 , H01L21/0228 , H01L21/31604 , H01L21/3162 , H01L21/31691 , H01L28/55
摘要： The present invention discloses a method for forming a dielectric film having improved leakage current characteristics in a capacitor. A lower electrode having a surface and a rounded protruding portion is formed on a semiconductor substrate. The surface and the protruding portion define at least one concave area. A chemisorption layer is then formed on the surface and the rounded protruding portion by supplying a first reactant. Also, a physisorption layer is formed on the chemisorption layer from the first reactant. Next, a portion of the physisorption layer is removed and a portion of the physisorption layer is left on the concave area. Subsequently, the chemisorption layer and the portion of the physisorption layer on the concave area react with a second reactant to form a dielectric film on the surface of the lower electrode. The thickness of said dielectric film is greater on the concave area than on the protruding portion, thereby reducing leakage current.
摘要翻译：本发明公开了一种在电容器中形成具有改善的漏电流特性的电介质膜的方法。在半导体衬底上形成具有表面和圆形突出部分的下电极。表面和突出部分限定至少一个凹入区域。然后通过提供第一反应物在表面和圆形突出部分上形成化学吸附层。此外，在第一反应物的化学吸附层上形成物理吸附层。接下来，去除一部分物理吸附层，并将一部分物理吸附层留在凹面上。随后，化学吸收层和凹面上的物理吸附层的部分与第二反应物反应，以在下电极的表面上形成电介质膜。所述电介质膜的厚度在凹区域上大于突出部分的厚度，从而减少漏电流。

5. 发明授权

US06270572B1 Method for manufacturing thin film using atomic layer deposition 有权
标题翻译：使用原子层沉积制造薄膜的方法
公开(公告)号：US06270572B1
公开(公告)日：2001-08-07
申请号：US09371709
申请日：1999-08-09
申请人： Yeong-kwan Kim , Sang-in Lee , Chang-soo Park , Sang-min Lee
发明人： Yeong-kwan Kim , Sang-in Lee , Chang-soo Park , Sang-min Lee
IPC分类号： C30B2502
CPC分类号： H05B33/04 , C23C16/44 , C23C16/45527 , C23C16/45561 , H01L21/02381 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L21/31604 , H01L21/31691
摘要： A thin film manufacturing method is provided. The method includes the step of chemically adsorbing a first reactant on a substrate by injecting the first reactant into a chamber in which the substrate is loaded. Physisorbed first reactant on the chemically adsorbed first reactant is removed by purging or pumping the chamber. After the first reactant is densely chemically adsorbed on the substrate by re-injecting the first reactant into the chamber, the physisorbed first reactant on the dense chemisorbed first reactant is removed by purging or pumping the chamber. A second reactant is chemically adsorbed onto the surface of the substrate by injecting the second reactant into the chamber. Physisorbed second reactant on the chemisorbed first reactant and the second reactant is removed by purging or pumping the chamber. A solid thin film is formed by chemical exchange through densely adsorbing the second reactant onto the substrate by re-injecting the second reactant into the chamber. According to the present invention, it is possible to obtain a precise stoichiometric thin film having a high film density, since the first reactant and the second reactant are densely adsorbed and the impurities are substantially removed by pumping or purging
摘要翻译：提供薄膜制造方法。该方法包括通过将第一反应物注入到其中负载衬底的室中来在基底上化学吸附第一反应物的步骤。化学吸附的第一反应物上的物理吸附的第一反应物通过清洗或泵送室来除去。在第一反应物通过将第一反应物重新注入室中密集地化学吸附在基材上之后，通过清洗或泵送室来去除致密化学吸附的第一反应物上的物理吸附的第一反应物。通过将第二反应物注入到室中，将第二反应物化学吸附到基底的表面上。化学吸附的第一反应物和第二反应物上的物理吸附的第二反应物通过清洗或泵送室来除去。通过将第二反应物重新注入到室中，将第二反应物密集地吸附到基底上，通过化学交换形成固体薄膜。根据本发明，可以获得具有高膜密度的精确化学计量薄膜，因为第一反应物和第二反应物被密集吸附并且通过泵送或清除基本上除去杂质

6. 发明授权

US6144060A Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature 失效
标题翻译：其中具有缓冲层的集成电路器件含有通过在低温下热处理而稳定的金属氧化物
公开(公告)号：US6144060A
公开(公告)日：2000-11-07
申请号：US127353
申请日：1998-07-31
申请人： In-seon Park , Yeong-kwan Kim , Sang-in Lee , Byung-hee Kim , Sang-min Lee , Chang-soo Park
发明人： In-seon Park , Yeong-kwan Kim , Sang-in Lee , Byung-hee Kim , Sang-min Lee , Chang-soo Park
IPC分类号： H01L21/8247 , H01L21/02 , H01L21/285 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/788 , H01L29/792 , H01L29/72
CPC分类号： H01L28/75 , H01L21/28568 , H01L27/10852 , H01L28/55
摘要： Integrated circuit devices include a first dielectric layer, an electrically insulating layer on the first dielectric layer and an an aluminum oxide buffer layer formed by atomic layer deposition (ALD) and stabilized by heat treatment at a temperature of less than about 600.degree. C., between the first dielectric layer and the electrically insulating layer. The first dielectric layer may comprise a high dielectric material such as a ferroelectric or paraelectric material. The electrically insulating layer may also comprise a material selected from the group consisting of silicon dioxide, borophosphosilicate glass (BPSG) and phosphosilicate glass (PSG). To provide a preferred integrated circuit capacitor, a substrate may be provided and an interlayer dielectric layer may be provided on the substrate. Here, a metal layer may also be provided between the interlayer dielectric layer and the first dielectric layer. The metal layer may comprise a material selected from the group consisting of Pt, Ru, Ir, and Pd.
摘要翻译：集成电路器件包括第一电介质层，第一电介质层上的电绝缘层和通过原子层沉积（ALD）形成并通过在小于约600℃的温度下进行热处理而稳定的氧化铝缓冲层，在第一介电层和电绝缘层之间。第一电介质层可以包括高电介质材料，例如铁电或顺电材料。电绝缘层还可以包括选自二氧化硅，硼磷硅酸盐玻璃（BPSG）和磷硅玻璃（PSG）的材料。为了提供优选的集成电路电容器，可以提供衬底，并且可以在衬底上提供层间电介质层。这里，还可以在层间介电层和第一介电层之间设置金属层。金属层可以包括选自Pt，Ru，Ir和Pd的材料。

7. 发明申请

US20060020956A1 Data recording/reproducing apparatus 有权
标题翻译：数据记录/重放装置
公开(公告)号：US20060020956A1
公开(公告)日：2006-01-26
申请号：US11185876
申请日：2005-07-21
申请人： Sang-in Lee
发明人： Sang-in Lee
IPC分类号： G11B33/12 , G11B15/68
CPC分类号： G06F1/184 , G06F1/187 , G11B25/10 , G11B33/022 , G11B33/027
摘要： A data recording/reproducing apparatus, includes: an open front housing having a base frame and a cover frame; a recording/reproducing unit installed in the housing to record/reproduce data in/from a predetermined recording medium; a circuit board installed parallel to the recording/reproducing unit in the housing; a front unit connected to the open front of the housing to support operation buttons; a first locking unit which locks the front unit and the recording/reproducing unit; and a second locking unit which locks the front unit and the housing at a position corresponding to the circuit board.
摘要翻译：一种数据记录/再现装置，包括：具有基架和盖框架的敞开前壳; 安装在壳体中以在预定记录介质中记录/再现数据的记录/再现单元; 与壳体中的记录/再现单元平行安装的电路板; 连接到所述壳体的敞开前部以支撑操作按钮的前部单元; 第一锁定单元，其锁定前单元和记录/再现单元; 以及第二锁定单元，其将前单元和壳体锁定在对应于电路板的位置。

8. 发明授权

US06372598B1 Method of forming selective metal layer and method of forming capacitor and filling contact hole using the same 有权
公开(公告)号：US06372598B1
公开(公告)日：2002-04-16
申请号：US09334588
申请日：1999-06-16
申请人： Sang-bum Kang , Yun-sook Chae , Sang-in Lee , Hyun-seok Lim , Mee-young Yoon
发明人： Sang-bum Kang , Yun-sook Chae , Sang-in Lee , Hyun-seok Lim , Mee-young Yoon
IPC分类号： H01L2120
摘要： A selective metal layer formation method, a capacitor formation method using the same, and a method of forming an ohmic layer on a contact hole and filling the contact hole using the same, are provided. A sacrificial metal layer is selectively deposited on a conductive layer by supplying a sacrificial metal source gas which deposits selectively on a semiconductor substrate having an insulating film and the conductive layer. Sacrificial metal atoms and a halide are formed, and the sacrificial metal layer is replaced with a deposition metal layer such as titanium Ti or platinum Pt, by supplying a metal halide gas having a halogen coherence smaller than the halogen coherence of the metal atoms in the sacrificial metal layer. If such a process is used to form a capacitor lower electrode or form an ohmic layer on the bottom of a contact hole, a metal layer can be selectively formed at a temperature of 500° C. or lower.

9. 发明授权

US06284591B1 Formation method of interconnection in semiconductor device 有权
标题翻译：半导体器件互连的形成方法
公开(公告)号：US06284591B1
公开(公告)日：2001-09-04
申请号：US09299566
申请日：1999-04-27
申请人： Sang-in Lee
发明人： Sang-in Lee
IPC分类号： H01L218242
CPC分类号： H01L27/10873 , H01L27/1052
摘要： A method of forming an interconnection by using a landing pad is disclosed. In a semiconductor device having a memory cell portion and a peripheral circuit portion, a refractory metal is used for the bitline instead of the usual polycide, to concurrently form a contact on an active region of an N-type and a P-type substrate. A landing pad is formed on the peripheral circuit portion at the same time as a bitline is formed on the memory cell portion. In such a process, a substantial contact hole for the interconnection is formed on the landing pad so that an aspect ratio of the contact can be lowered. Accordingly, when forming a metal interconnection, the contact hole for the interconnection is easily filled by Al-reflow so that the step coverage of the metal being deposited in the contact hole for the interconnection is enhanced, and the contact resistance is reduced. As a result, the reliability of the semiconductor device is improved.
摘要翻译：公开了一种通过使用着陆垫形成互连的方法。在具有存储单元部分和外围电路部分的半导体器件中，难题金属用于位线而不是通常的多硅化物，以在N型和P型衬底的有源区上同时形成接触。在存储单元部分上形成位线的同时，在外围电路部分上形成着键盘。在这种过程中，用于互连的实质接触孔形成在着陆焊盘上，使得可以降低接触的纵横比。因此，当形成金属互连时，易于通过Al回流填充用于互连的接触孔，使得沉积在用于互连的接触孔中的金属的台阶覆盖增强，并且接触电阻降低。结果，提高了半导体器件的可靠性。

10. 发明授权

US6087257A Methods of fabricating a selectively deposited tungsten nitride layer and metal wiring using a tungsten nitride layer 失效
标题翻译：使用氮化钨层制造选择性沉积的氮化钨层和金属布线的方法
公开(公告)号：US6087257A
公开(公告)日：2000-07-11
申请号：US751153
申请日：1996-11-15
申请人： Byung-lyul Park , Jung-min Ha , Dae-hong Ko , Sang-in Lee
发明人： Byung-lyul Park , Jung-min Ha , Dae-hong Ko , Sang-in Lee
IPC分类号： H01L21/768 , H01L21/44
CPC分类号： H01L21/76855 , H01L21/76843 , H01L21/76879
摘要： Methods for fabricating a tungsten nitride layer in a semiconductor substrate having an insulating layer formed thereon. The methods include forming a contact hole through the insulating layer. A tungsten nitride layer is then selectively deposited only in the contact hole by selectively reacting a nitrogen-containing gas with a tungsten source gas so as to prevent formation of tungsten nitride layer on the insulating layer outside the contact hole. Methods or fabricating metal wiring utilizing the methods of fabricating a tungsten nitride layer are also provided.
摘要翻译：在其上形成有绝缘层的半导体衬底中制造氮化钨层的方法。所述方法包括形成穿过绝缘层的接触孔。然后通过选择性地使含氮气体与钨源气体反应来选择性地沉积氮化钨层，以防止在接触孔外部的绝缘层上形成氮化钨层。还提供了利用制造氮化钨层的方法或制造金属布线的方法。

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