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2. 发明授权

US06376355B1 Method for forming metal interconnection in semiconductor device 有权
标题翻译：在半导体器件中形成金属互连的方法
公开(公告)号：US06376355B1
公开(公告)日：2002-04-23
申请号：US09136798
申请日：1998-08-19
申请人： Mee-young Yoon , Sang-in Lee
发明人： Mee-young Yoon , Sang-in Lee
IPC分类号： H01L214763
CPC分类号： H01L21/76856 , H01L21/76829 , H01L21/76843 , H01L21/76876 , H01L21/76879
摘要： A method for forming a metal interconnection filing a contact hole or a groove having a high aspect ratio. An interdielectric layer pattern having a recessed region corresponding to the contact hole or the groove is formed on a semiconductor substrate, and a barrier metal layer is formed on the entire surface of the resultant structure where the interdielectric layer pattern is formed. An anti-nucleation layer is selectively formed only on the non-recessed region of the barrier metal layer, thereby exposing the barrier metal layer formed on the sidewalls and the bottom of the recessed region. Subsequently, a metal plug is selectively formed in the recessed region, surrounded by the barrier metal layer, thereby forming a metal interconnection for completely filling the contact hole or the groove having a high aspect ratio. A metal liner may be formed instead of the metal plug, followed by forming a metal layer filling the region surrounded by the metal liner, thereby forming metal interconnection for completely filling the contact hole or groove having a high aspect ratio.
摘要翻译：一种形成具有高纵横比的接触孔或凹槽的金属互连的方法。在半导体衬底上形成具有与接触孔或凹槽相对应的凹入区域的电介质层图案，并且在形成介电层图案的所得结构的整个表面上形成阻挡金属层。仅在阻挡金属层的非凹部区域选择性地形成防结晶层，从而露出形成在凹陷区域的侧壁和底部的阻挡金属层。随后，在由阻挡金属层包围的凹陷区域中选择性地形成金属插塞，从而形成用于完全填充接触孔或具有高纵横比的沟槽的金属互连。可以形成金属衬垫代替金属插塞，随后形成填充由金属衬垫包围的区域的金属层，从而形成用于完全填充具有高纵横比的接触孔或槽的金属互连。

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