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1. 发明授权

US06372598B1 Method of forming selective metal layer and method of forming capacitor and filling contact hole using the same 有权
公开(公告)号：US06372598B1
公开(公告)日：2002-04-16
申请号：US09334588
申请日：1999-06-16
申请人： Sang-bum Kang , Yun-sook Chae , Sang-in Lee , Hyun-seok Lim , Mee-young Yoon
发明人： Sang-bum Kang , Yun-sook Chae , Sang-in Lee , Hyun-seok Lim , Mee-young Yoon
IPC分类号： H01L2120
摘要： A selective metal layer formation method, a capacitor formation method using the same, and a method of forming an ohmic layer on a contact hole and filling the contact hole using the same, are provided. A sacrificial metal layer is selectively deposited on a conductive layer by supplying a sacrificial metal source gas which deposits selectively on a semiconductor substrate having an insulating film and the conductive layer. Sacrificial metal atoms and a halide are formed, and the sacrificial metal layer is replaced with a deposition metal layer such as titanium Ti or platinum Pt, by supplying a metal halide gas having a halogen coherence smaller than the halogen coherence of the metal atoms in the sacrificial metal layer. If such a process is used to form a capacitor lower electrode or form an ohmic layer on the bottom of a contact hole, a metal layer can be selectively formed at a temperature of 500° C. or lower.

2. 发明授权

US06197683B1 Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same 有权
标题翻译：通过化学气相沉积形成金属氮化物膜的方法和使用其形成半导体器件的金属接触的方法
公开(公告)号：US06197683B1
公开(公告)日：2001-03-06
申请号：US09156724
申请日：1998-09-18
申请人： Sang-bom Kang , Chang-soo Park , Yun-sook Chae , Sang-in Lee
发明人： Sang-bom Kang , Chang-soo Park , Yun-sook Chae , Sang-in Lee
IPC分类号： H01L2144
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/45553 , H01L21/28562 , H01L21/28568 , H01L21/76804 , H01L28/91
摘要： A method of forming a metal nitride film using chemical vapor deposition (CVD), and a method of forming a metal contact of a semiconductor device using the same, are provided. The method of forming a metal nitride film using chemical vapor deposition (CVD) in which a metal source and a nitrogen source are used as a precursor, includes the steps of inserting a semiconductor substrate into a deposition chamber, flowing the metal source into the deposition chamber, removing the metal source remaining in the deposition chamber by cutting off the inflow of the metal source and flowing a purge gas into the deposition chamber, cutting off the purge gas and flowing the nitrogen source into the deposition chamber to react with the metal source adsorbed on the semiconductor substrate, and removing the nitrogen source remaining in the deposition chamber by cutting off the inflow of the nitrogen source and flowing the purge gas into the deposition chamber. Accordingly, the metal nitride film has low resistivity and a low content of Cl even with excellent step coverage, and it can be formed at a temperature of 500° C. or lower. Also, a deposition speed, approximately 20 Å/cycle, is suitable for mass production.
摘要翻译：提供了使用化学气相沉积（CVD）形成金属氮化物膜的方法，以及使用其形成使用其的半导体器件的金属接触的方法。使用其中使用金属源和氮源作为前体的化学气相沉积（CVD）形成金属氮化物膜的方法包括以下步骤：将半导体衬底插入淀积室中，使金属源流入沉积物通过切断金属源的流入并将净化气体流入沉积室，去除沉积室中残留的金属源，切断净化气体并使氮源流入沉积室以与金属源反应吸附在半导体衬底上，并且通过切断氮源的流入并将净化气体流入沉积室来除去留在沉积室中的氮源。因此，即使具有优异的阶梯覆盖，金属氮化物膜也具有低电阻率和低的Cl含量，并且可以在500℃或更低的温度下形成。此外，沉积速度约为每秒的一个循环，适合批量生产。

3. 发明授权

US06174809B1 Method for forming metal layer using atomic layer deposition 有权
标题翻译：使用原子层沉积法形成金属层的方法
公开(公告)号：US06174809B1
公开(公告)日：2001-01-16
申请号：US09212090
申请日：1998-12-15
申请人： Sang-bom Kang , Yun-sook Chae , Chang-soo Park , Sang-in Lee
发明人： Sang-bom Kang , Yun-sook Chae , Chang-soo Park , Sang-in Lee
IPC分类号： H01L2144
CPC分类号： H01L21/76846 , C23C16/45561 , H01L21/28518 , H01L21/28562 , H01L21/76843
摘要： A method for forming a metal layer using an atomic layer deposition process. A sacrificial metal atomic layer is formed on a semiconductor substrate by reacting a precursor containing a metal with a reducing gas, and a metal atomic layer is formed of metal atoms separated from a metal halide gas on a semiconductor substrate by reacting the sacrificial metal atomic layer with a metal halide gas. Also, a silicon atomic layer may be additionally formed on the metal atomic layer using a silicon source gas, to thereby alternately stack metal atomic layers and silicon layers. Thus, a metal layer or a metal silicide layer having excellent step coverage can be formed on the semiconductor substrate.
摘要翻译：一种使用原子层沉积工艺形成金属层的方法。通过使包含金属的前体与还原气体反应而在半导体衬底上形成牺牲金属原子层，并且金属原子层由半导体衬底上的金属卤化物气体分离的金属原子形成，通过使牺牲金属原子层与金属卤化物气体。此外，可以使用硅源气体在金属原子层上另外形成硅原子层，从而交替堆叠金属原子层和硅层。因此，可以在半导体衬底上形成具有优异的阶梯覆盖的金属层或金属硅化物层。

4. 发明授权

US06478872B1 Method of delivering gas into reaction chamber and shower head used to deliver gas 有权
标题翻译：将气体输送到用于输送气体的反应室和淋浴喷头中的方法
公开(公告)号：US06478872B1
公开(公告)日：2002-11-12
申请号：US09467313
申请日：1999-12-20
申请人： Yun-sook Chae , In-sang Jeon , Sang-bom Kang , Sang-in Lee , Kyu-wan Ryu
发明人： Yun-sook Chae , In-sang Jeon , Sang-bom Kang , Sang-in Lee , Kyu-wan Ryu
IPC分类号： C30B2500
CPC分类号： C30B25/14 , C23C16/45548 , C23C16/45565 , C23C16/45574
摘要： A method of delivering two or more mutually-reactive reaction gases when a predetermined film is deposited on a substrate, and a shower head used in the gas delivery method, function to increase the film deposition rate while preventing formation of contaminating particles. In this method, one reaction gas is delivered toward the edge of the substrate, and the other reaction gases are delivered toward the central portion of the substrate, each of the reaction gases being delivered via an independent gas outlet to prevent the reaction gases from being mixed. In the shower head, separate passages are provided to prevent the first reaction gas from mixing with the other reaction gases by delivering the first reaction gas from outlets formed around the edge of the bottom surface of the shower head. The other reaction gases are delivered from outlets formed in the central portion of the bottom surface of the shower head. Accordingly, one of the mutually-reactive gases is delivered toward the central portion of the substrate, and the others are delivered toward the edge of the substrate.
摘要翻译：当将预定的膜沉积在基底上时输送两个或更多个相互反应的反应气体的方法和用于气体输送方法的淋浴头的作用是提高膜沉积速率同时防止污染颗粒的形成。在该方法中，一个反应气体被输送到基板的边缘，并且其它反应气体被输送到基板的中心部分，每个反应气体经由独立的气体出口输送，以防止反应气体混合在喷淋头中，设置分开的通道，以防止第一反应气体与其它反应气体混合，通过从喷淋头底表面的边缘周围形成的出口输送第一反应气体。其他反应气体从形成在淋浴喷头的底面的中心部分的出口输送。因此，相互反应的气体中的一种被输送到基板的中心部分，而其它的被传送到基板的边缘。

5. 发明授权

US06376355B1 Method for forming metal interconnection in semiconductor device 有权
标题翻译：在半导体器件中形成金属互连的方法
公开(公告)号：US06376355B1
公开(公告)日：2002-04-23
申请号：US09136798
申请日：1998-08-19
申请人： Mee-young Yoon , Sang-in Lee
发明人： Mee-young Yoon , Sang-in Lee
IPC分类号： H01L214763
CPC分类号： H01L21/76856 , H01L21/76829 , H01L21/76843 , H01L21/76876 , H01L21/76879
摘要： A method for forming a metal interconnection filing a contact hole or a groove having a high aspect ratio. An interdielectric layer pattern having a recessed region corresponding to the contact hole or the groove is formed on a semiconductor substrate, and a barrier metal layer is formed on the entire surface of the resultant structure where the interdielectric layer pattern is formed. An anti-nucleation layer is selectively formed only on the non-recessed region of the barrier metal layer, thereby exposing the barrier metal layer formed on the sidewalls and the bottom of the recessed region. Subsequently, a metal plug is selectively formed in the recessed region, surrounded by the barrier metal layer, thereby forming a metal interconnection for completely filling the contact hole or the groove having a high aspect ratio. A metal liner may be formed instead of the metal plug, followed by forming a metal layer filling the region surrounded by the metal liner, thereby forming metal interconnection for completely filling the contact hole or groove having a high aspect ratio.
摘要翻译：一种形成具有高纵横比的接触孔或凹槽的金属互连的方法。在半导体衬底上形成具有与接触孔或凹槽相对应的凹入区域的电介质层图案，并且在形成介电层图案的所得结构的整个表面上形成阻挡金属层。仅在阻挡金属层的非凹部区域选择性地形成防结晶层，从而露出形成在凹陷区域的侧壁和底部的阻挡金属层。随后，在由阻挡金属层包围的凹陷区域中选择性地形成金属插塞，从而形成用于完全填充接触孔或具有高纵横比的沟槽的金属互连。可以形成金属衬垫代替金属插塞，随后形成填充由金属衬垫包围的区域的金属层，从而形成用于完全填充具有高纵横比的接触孔或槽的金属互连。

6. 发明授权

US06391769B1 Method for forming metal interconnection in semiconductor device and interconnection structure fabricated thereby 有权
标题翻译：用于在半导体器件中形成金属互连的方法和由此制造的互连结构
公开(公告)号：US06391769B1
公开(公告)日：2002-05-21
申请号：US09525154
申请日：2000-03-14
申请人： Jong-myeong Lee , Hyun-seok Lim , Byung-hee Kim , Gil-heyun Choi , Sang-in Lee
发明人： Jong-myeong Lee , Hyun-seok Lim , Byung-hee Kim , Gil-heyun Choi , Sang-in Lee
IPC分类号： H01L214763
CPC分类号： H01L21/76855 , H01L21/28562 , H01L21/32051 , H01L21/76843 , H01L21/76856 , H01L21/76876 , H01L21/76879 , H01L21/76882 , H01L21/76888 , H01L2221/1089
摘要： A method for forming a metal interconnection filling a contact hole or a groove having a high aspect ratio, and a contact structure fabricated thereby. An interdielectric layer pattern, having a recessed region serving as a contact hole, a via hole or a groove, is formed on a semiconductor substrate. A barrier metal layer is formed on the entire surface of the resultant structure where the interdielectric layer pattern is formed. An anti-nucleation layer is selectively formed only on the non-recessed region of the barrier metal layer. The anti-nucleation layer is formed by forming a metal layer overlying the barrier metal layer in regions other than the recessed region, and then spontaneously oxidizing the metal layer in a vacuum. Also, the anti-nucleation layer may be formed by in-situ forming the barrier metal layer and the metal layer and then oxidizing the metal layer by an annealing process. Subsequently, a metal plug is selectively formed in the recessed region, surrounded by the barrier metal layer, thereby forming a metal interconnection for completely filling the contact hole or the groove having a high aspect ratio. A metal liner may be formed instead of the metal plug, followed by forming a metal layer filling the region surrounded by the metal liner, thereby forming a metal interconnection for completely filling the contact hole or groove having a high aspect ratio.
摘要翻译：一种用于形成填充高纵横比的接触孔或槽的金属互连的方法，以及由此制造的接触结构。在半导体衬底上形成具有用作接触孔的凹陷区域，通孔或沟槽的电介质层图案。在形成介电层图案的所得结构的整个表面上形成阻挡金属层。仅在阻挡金属层的非凹陷区域选择性地形成抗成核层。通过在除了凹陷区域之外的区域中形成覆盖阻挡金属层的金属层，然后在真空中自发氧化金属层，形成抗成核层。此外，抗成核层可以通过原位形成阻挡金属层和金属层，然后通过退火处理来氧化金属层而形成。随后，在由阻挡金属层包围的凹陷区域中选择性地形成金属插塞，从而形成用于完全填充接触孔或具有高纵横比的沟槽的金属互连。可以形成金属衬垫而不是金属插塞，随后形成填充由金属衬垫包围的区域的金属层，从而形成用于完全填充具有高纵横比的接触孔或槽的金属互连。

7. 发明申请

US20060020956A1 Data recording/reproducing apparatus 有权
标题翻译：数据记录/重放装置
公开(公告)号：US20060020956A1
公开(公告)日：2006-01-26
申请号：US11185876
申请日：2005-07-21
申请人： Sang-in Lee
发明人： Sang-in Lee
IPC分类号： G11B33/12 , G11B15/68
CPC分类号： G06F1/184 , G06F1/187 , G11B25/10 , G11B33/022 , G11B33/027
摘要： A data recording/reproducing apparatus, includes: an open front housing having a base frame and a cover frame; a recording/reproducing unit installed in the housing to record/reproduce data in/from a predetermined recording medium; a circuit board installed parallel to the recording/reproducing unit in the housing; a front unit connected to the open front of the housing to support operation buttons; a first locking unit which locks the front unit and the recording/reproducing unit; and a second locking unit which locks the front unit and the housing at a position corresponding to the circuit board.
摘要翻译：一种数据记录/再现装置，包括：具有基架和盖框架的敞开前壳; 安装在壳体中以在预定记录介质中记录/再现数据的记录/再现单元; 与壳体中的记录/再现单元平行安装的电路板; 连接到所述壳体的敞开前部以支撑操作按钮的前部单元; 第一锁定单元，其锁定前单元和记录/再现单元; 以及第二锁定单元，其将前单元和壳体锁定在对应于电路板的位置。

8. 发明授权

US06284591B1 Formation method of interconnection in semiconductor device 有权
标题翻译：半导体器件互连的形成方法
公开(公告)号：US06284591B1
公开(公告)日：2001-09-04
申请号：US09299566
申请日：1999-04-27
申请人： Sang-in Lee
发明人： Sang-in Lee
IPC分类号： H01L218242
CPC分类号： H01L27/10873 , H01L27/1052
摘要： A method of forming an interconnection by using a landing pad is disclosed. In a semiconductor device having a memory cell portion and a peripheral circuit portion, a refractory metal is used for the bitline instead of the usual polycide, to concurrently form a contact on an active region of an N-type and a P-type substrate. A landing pad is formed on the peripheral circuit portion at the same time as a bitline is formed on the memory cell portion. In such a process, a substantial contact hole for the interconnection is formed on the landing pad so that an aspect ratio of the contact can be lowered. Accordingly, when forming a metal interconnection, the contact hole for the interconnection is easily filled by Al-reflow so that the step coverage of the metal being deposited in the contact hole for the interconnection is enhanced, and the contact resistance is reduced. As a result, the reliability of the semiconductor device is improved.
摘要翻译：公开了一种通过使用着陆垫形成互连的方法。在具有存储单元部分和外围电路部分的半导体器件中，难题金属用于位线而不是通常的多硅化物，以在N型和P型衬底的有源区上同时形成接触。在存储单元部分上形成位线的同时，在外围电路部分上形成着键盘。在这种过程中，用于互连的实质接触孔形成在着陆焊盘上，使得可以降低接触的纵横比。因此，当形成金属互连时，易于通过Al回流填充用于互连的接触孔，使得沉积在用于互连的接触孔中的金属的台阶覆盖增强，并且接触电阻降低。结果，提高了半导体器件的可靠性。

9. 发明授权

US06207487B1 Method for forming dielectric film of capacitor having different thicknesses partly 失效
标题翻译：部分形成不同厚度的电容器的电介质膜的形成方法
公开(公告)号：US06207487B1
公开(公告)日：2001-03-27
申请号：US09415830
申请日：1999-10-12
申请人： Yeong-kwan Kim , Sang-in Lee , Chang-soo Park , Young-sun Kim
发明人： Yeong-kwan Kim , Sang-in Lee , Chang-soo Park , Young-sun Kim
IPC分类号： H01L218244
CPC分类号： H01L28/40 , H01L21/02178 , H01L21/0228 , H01L21/31604 , H01L21/3162 , H01L21/31691 , H01L28/55
摘要： The present invention discloses a method for forming a dielectric film having improved leakage current characteristics in a capacitor. A lower electrode having a surface and a rounded protruding portion is formed on a semiconductor substrate. The surface and the protruding portion define at least one concave area. A chemisorption layer is then formed on the surface and the rounded protruding portion by supplying a first reactant. Also, a physisorption layer is formed on the chemisorption layer from the first reactant. Next, a portion of the physisorption layer is removed and a portion of the physisorption layer is left on the concave area. Subsequently, the chemisorption layer and the portion of the physisorption layer on the concave area react with a second reactant to form a dielectric film on the surface of the lower electrode. The thickness of said dielectric film is greater on the concave area than on the protruding portion, thereby reducing leakage current.
摘要翻译：本发明公开了一种在电容器中形成具有改善的漏电流特性的电介质膜的方法。在半导体衬底上形成具有表面和圆形突出部分的下电极。表面和突出部分限定至少一个凹入区域。然后通过提供第一反应物在表面和圆形突出部分上形成化学吸附层。此外，在第一反应物的化学吸附层上形成物理吸附层。接下来，去除一部分物理吸附层，并将一部分物理吸附层留在凹面上。随后，化学吸收层和凹面上的物理吸附层的部分与第二反应物反应，以在下电极的表面上形成电介质膜。所述电介质膜的厚度在凹区域上大于突出部分的厚度，从而减少漏电流。

10. 发明授权

US6087257A Methods of fabricating a selectively deposited tungsten nitride layer and metal wiring using a tungsten nitride layer 失效
标题翻译：使用氮化钨层制造选择性沉积的氮化钨层和金属布线的方法
公开(公告)号：US6087257A
公开(公告)日：2000-07-11
申请号：US751153
申请日：1996-11-15
申请人： Byung-lyul Park , Jung-min Ha , Dae-hong Ko , Sang-in Lee
发明人： Byung-lyul Park , Jung-min Ha , Dae-hong Ko , Sang-in Lee
IPC分类号： H01L21/768 , H01L21/44
CPC分类号： H01L21/76855 , H01L21/76843 , H01L21/76879
摘要： Methods for fabricating a tungsten nitride layer in a semiconductor substrate having an insulating layer formed thereon. The methods include forming a contact hole through the insulating layer. A tungsten nitride layer is then selectively deposited only in the contact hole by selectively reacting a nitrogen-containing gas with a tungsten source gas so as to prevent formation of tungsten nitride layer on the insulating layer outside the contact hole. Methods or fabricating metal wiring utilizing the methods of fabricating a tungsten nitride layer are also provided.
摘要翻译：在其上形成有绝缘层的半导体衬底中制造氮化钨层的方法。所述方法包括形成穿过绝缘层的接触孔。然后通过选择性地使含氮气体与钨源气体反应来选择性地沉积氮化钨层，以防止在接触孔外部的绝缘层上形成氮化钨层。还提供了利用制造氮化钨层的方法或制造金属布线的方法。

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