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1. 发明授权

US06793732B1 Method and kit for growing cross-shaped crystals 失效
标题翻译：生长十字形晶体的方法和试剂盒
公开(公告)号：US06793732B1
公开(公告)日：2004-09-21
申请号：US10060928
申请日：2002-01-29
申请人： Stacy Williams
发明人： Stacy Williams
IPC分类号： C30B2504
CPC分类号： C30B29/12 , C30B5/00 , C30B29/56
摘要： The present invention provides a method for growing crystals in a gel matrix by reacting tartrate anions with cations, the cations selected from the group consisting of K+, Ca2+, Na+, Mg2+ and Li+. A method particularly adapted for crowing cross-shaped crystals includes forming a gel matrix through cooling of a mixture of potassium bitartrate, boiling water and gelatin to less than 65° F. until the matrix solidifies, adding calcium chloride to the gel matrix to react the calcium chloride with the potassium bitartrate at a temperature of preferably less than 65° F. until crystals form, and separating cross-shaped crystals that have reached a desired size from the gel matrix by warming the gel to a liquid state and removing the crystals.
摘要翻译：本发明提供了一种通过使酒石酸盐阴离子与阳离子反应而在凝胶基质中生长晶体的方法，所述阳离子选自K +，Ca 2+，Na +，Mg 2+和李+。特别适于挤压十字形晶体的方法包括通过将酒石酸钾，沸水和明胶的混合物冷却至小于65°F形成凝胶基质，直到基体固化，向凝胶基质中加入氯化钙氯化钾与酒石酸钾在优选低于65°F的温度下反应，直至形成晶体，并且通过将凝胶升温至液体状态并除去晶体，从凝胶基质中分离已达到所需尺寸的十字形晶体。

2. 发明授权

US06773507B2 Apparatus and method for fast-cycle atomic layer deposition 有权
标题翻译：用于快速循环原子层沉积的装置和方法
公开(公告)号：US06773507B2
公开(公告)日：2004-08-10
申请号：US10215068
申请日：2002-08-07
申请人： Ravi Jallepally , Shih-Hung Li , Alain Duboust , Jun Zhao , Liang-Yuh Chen , Daniel A. Carl
发明人： Ravi Jallepally , Shih-Hung Li , Alain Duboust , Jun Zhao , Liang-Yuh Chen , Daniel A. Carl
IPC分类号： C30B2504
CPC分类号： C30B25/14 , C23C16/45521 , C23C16/45544 , C23C16/45565 , Y10T117/1008
摘要： Method and apparatus for depositing layers by atomic layer deposition. A virtual shower curtain is established between the substrate support and chamber to minimize the volume in which the reactants are distributed. A showerhead may be used to allow closer placement of the substrate thereto, further reducing the reaction volume. Zero dead space volume valves with close placement to the chamber lid and fast cycle times also improve the cycle times of the process.
摘要翻译：用于通过原子层沉积沉积层的方法和装置。在基板支撑件和室之间建立虚拟浴帘，以使反应物分布的体积最小化。可以使用喷头来使衬底更靠近放置，进一步减小反应体积。零静态空间体积阀具有紧密放置在室盖和快速循环时间，也提高了工艺的循环时间。

3. 发明授权

US06749684B1 Method for improving CVD film quality utilizing polysilicon getterer 有权
标题翻译：利用多晶硅吸收器提高CVD膜质量的方法
公开(公告)号：US06749684B1
公开(公告)日：2004-06-15
申请号：US10250181
申请日：2003-06-10
申请人： Huajie Chen , Dan Mocuta , Richard J. Murphy , Paul Ronsheim , David Rockwell
发明人： Huajie Chen , Dan Mocuta , Richard J. Murphy , Paul Ronsheim , David Rockwell
IPC分类号： C30B2504
CPC分类号： C30B29/06 , C30B25/02 , C30B29/08 , C30B29/52
摘要： A method is disclosed for forming an epitaxial layer on a front side of a substrate formed of a monocrystalline material, using a chemical vapor deposition system. In this method, a plurality of gettering wafers formed of a gettering material are arranged in the CVD system, such that the front side of each substrate is facing one of the gettering wafers. Impurities present in the CVD system during formation of the epitaxial layer are gettered by the gettering wafers. Alternatively, a layer of a gettering material is deposited on a back side of each of the plurality of substrates, and the substrates are arranged such that the front side of each substrate is facing the backside of another of the substrates. In another embodiment, a layer of a gettering material is deposited on an interior surface of the CVD system. Impurities removed from the CVD system during epitaxial formation include oxygen, water vapor and other oxygen-containing contaminants.
摘要翻译：公开了一种使用化学气相沉积系统在由单晶材料形成的基板的正面上形成外延层的方法。在该方法中，在CVD系统中配置由吸气材料形成的多个吸气晶片，使得每个基板的前侧面对吸气晶片之一。在形成外延层期间存在于CVD系统中的杂质被吸杂晶片吸收。或者，在多个基板的每一个的背面上沉积吸气材料层，并且将基板布置成使得每个基板的前侧面对另一个基板的背面。在另一个实施例中，吸气材料层沉积在CVD系统的内表面上。在外延形成期间从CVD系统中除去的杂质包括氧，水蒸气和其它含氧污染物。

4. 发明授权

US06835246B2 Nanostructures for hetero-expitaxial growth on silicon substrates 失效
标题翻译：用于硅衬底上异质外延生长的纳米结构
公开(公告)号：US06835246B2
公开(公告)日：2004-12-28
申请号：US10299568
申请日：2002-11-18
申请人： Saleem H. Zaidi
发明人： Saleem H. Zaidi
IPC分类号： C30B2504
CPC分类号： C30B25/18 , H01L21/0237 , H01L21/02381 , H01L21/02433 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/02639 , H01L21/02647 , H01L21/0265 , Y10T428/12528 , Y10T428/12667 , Y10T428/12681
摘要： Selected micro- and nanoscale, 1-dimensional and 2-dimensional periodic and random structures generated on silicon and other substrates are expected to perform as compliant, thin films for gettering defects and for accommodating lattice and thermal expansion mismatches during heteroepitaxial growth thereon, thereby leading to relatively defect-free, heteroepitaxial films of chosen thicknesses. The as-grown epilayers or completed electronic and optoelectronic devices can be bonded to a second substrate such as glass, or plastic following separation thereof from the substrate on which they were formed using preferential etching of a readily detachable, nanoporous silicon or silicon dioxide layer introduced between the generated structures and the substrate.
摘要翻译：期望在硅和其它基板上产生的选定的微观和纳米尺度，一维和二维周期性和随机结构作为顺应性薄膜，用于吸收缺陷并且在异质外延生长期间适应晶格和热膨胀错配，从而导致到具有所选厚度的相对缺陷的异质外延膜。经生长的外延层或完成的电子和光电子器件可以与第二基底（例如玻璃或塑料）粘合，之后将其与其上形成的基底分离，使用易于分离的纳米多孔硅或二氧化硅层引入在所生成的结构和衬底之间。

5. 发明授权

US06800136B2 Axial gradient transport apparatus and process 有权
标题翻译：轴向梯度输送装置及工艺
公开(公告)号：US06800136B2
公开(公告)日：2004-10-05
申请号：US10221426
申请日：2002-09-11
申请人： David W. Snyder , William J. Everson
发明人： David W. Snyder , William J. Everson
IPC分类号： C30B2504
CPC分类号： C30B23/06 , C30B23/00 , C30B23/002 , C30B29/36 , C30B35/00 , Y10T117/1032
摘要： Disclosed is an apparatus and a method for growing single crystals of materials such as silicon carbide through axial gradient transport. A source of the material (10) is placed at one end of a reaction chamber (2) opposite a seed crystal (13). Separate heating elements (16 and 60; 20 and 62) are positioned at opposite ends of the reaction chamber. The reaction chamber (2) is placed in a growth chamber (26). By appropriately controlling the pressure in the growth chamber (26) and the temperature of the heating elements (16, 20), including the temperature differential therebetween, a uniaxial temperature gradient is generated in the reaction chamber (2). In this manner, planar isotherms are generated and a high quality crystal can be grown through a physical vapor transport process.
摘要翻译：公开了一种用于通过轴向梯度输送生长单晶材料如碳化硅的装置和方法。材料源（10）放置在与晶种（13）相对的反应室（2）的一端。单独的加热元件（16和60; 20和62）位于反应室的相对端。将反应室（2）放置在生长室（26）中。通过适当地控制生长室（26）中的真空度和包括它们之间的温差的加热元件（16,20）的温度，在反应室（2）中产生单轴温度梯度。以这种方式，产生平面等温线，并且可以通过物理蒸气传输过程生长高质量的晶体。

6. 发明授权

US06623560B2 Crystal growth method 有权
公开(公告)号：US06623560B2
公开(公告)日：2003-09-23
申请号：US09907215
申请日：2001-07-17
申请人： Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
发明人： Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
IPC分类号： C30B2504
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： A crystal growth method includes forming a mask layer capable of impeding crystal growth on a substrate in such a way a first nitride semiconductor layer has irregularities at a surface thereof exposed at a window region opened at a part of the mask layer, and growing a second nitride semiconductor layer over a region including the surface of the mask layer through crystal growth from the irregularities. Through-type dislocations can be reliably prevented from propagation due to the discontinuity of crystals at the irregularities and also to lateral crystal growth.

7. 发明授权

US06478871B1 Single step process for epitaxial lateral overgrowth of nitride based materials 失效
标题翻译：用于氮化物基材料外延横向过度生长的单步法
公开(公告)号：US06478871B1
公开(公告)日：2002-11-12
申请号：US09676938
申请日：2000-10-02
申请人： James R. Shealy , Joseph A. Smart
发明人： James R. Shealy , Joseph A. Smart
IPC分类号： C30B2504
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： An epitaxial deposition process produces epitaxial lateral overgrowth (ELO) of nitride based materials directly a patterned substrate (10). The substrate (10) is preferably formed from SiC or sapphire, and is patterned with a mask (12), preferably formed of silicon nitride, having a plurality of openings (13) formed therein. A nucleation layer (14), preferably formed of AlGaN, is grown at a high reactor temperature of 700-1100 degrees C., which wets the exposed substrate surface, without significant nucleation on the mask (12). This eliminates the need for regrowth while producing smooth growth surfaces in the window openings (13) as well as over the mask (12). Subsequent deposition of a nitride based material layer (16), preferably GaN, results in a relatively defect free planar surfaced material grown laterally over the mask (12).
摘要翻译：外延沉积工艺直接对图案化的衬底（10）产生氮化物基材料的外延横向过度生长（ELO）。衬底（10）优选地由SiC或蓝宝石形成，并且用在其中形成有多个开口（13）的掩模（12）图案化，优选由氮化硅形成。优选由AlGaN形成的成核层（14）在700-1100℃的高反应器温度下生长，其在暴露的基底表面上润湿，而在掩模（12）上没有显着的成核。这消除了在窗口（13）中以及面罩（12）上方产生光滑生长表面的同时需要再生长。随后沉积氮化物基材料层（16），优选GaN，导致在掩模（12）上横向生长的相对缺陷的平坦表面材料。

8. 发明授权

US06348096B1 Method for manufacturing group III-V compound semiconductors 失效
标题翻译： III-V族化合物半导体的制造方法
公开(公告)号：US06348096B1
公开(公告)日：2002-02-19
申请号：US09038273
申请日：1998-03-11
申请人： Haruo Sunakawa , Akira Usui
发明人： Haruo Sunakawa , Akira Usui
IPC分类号： C30B2504
CPC分类号： C30B25/02 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L33/007 , H01L33/0075 , Y10T117/10
摘要： The Group III-V compound semiconductor manufacturing method which pertains to the present invention is a semiconductor manufacturing method employing epitaxy which comprises (a) a step in which growing areas are produced using a mask patterned on a substrate surface and (b) a step in which a Group III-V compound semiconductor layer is grown in the growing areas while forming facet structures. As epitaxy is continued, adjacent facet structures come into contact so that the surface of the semiconductor layer becomes planarized. Since lattice defects extend towards the facet structures, they do not extend towards the surface of the semiconductor layer. Accordingly, the number of lattice defects in the vicinity of the semiconductor layer surface is reduced.
摘要翻译：涉及本发明的III-V族化合物半导体制造方法是使用外延的半导体制造方法，其包括（a）使用在基板表面上图案化的掩模制造生长区域的步骤，（b）其中III-V族化合物半导体层在生长区域中生长，同时形成小面结构。随着外延继续，相邻的小面结构接触，使得半导体层的表面变平坦化。由于晶格缺陷朝着小平面结构延伸，所以它们不向半导体层的表面延伸。因此，半导体层表面附近的晶格缺陷的数量减少。

9. 发明授权

US06773508B2 Single crystal silicon carbide thin film fabrication method and fabrication apparatus of the same 失效
标题翻译：单晶碳化硅薄膜制造方法及其制造装置
公开(公告)号：US06773508B2
公开(公告)日：2004-08-10
申请号：US10159111
申请日：2002-06-03
申请人： Katsutoshi Izumi , Motoi Nakao , Yoshiaki Ohbayashi , Keiji Mine , Fumihiko Jobe
发明人： Katsutoshi Izumi , Motoi Nakao , Yoshiaki Ohbayashi , Keiji Mine , Fumihiko Jobe
IPC分类号： C30B2504
CPC分类号： C30B25/02 , C30B29/36
摘要： To economically and easily fabricate a single crystal silicon carbide thin film. The apparatus for fabricating a single crystal silicon carbide thin film comprises a film-formation chamber 200 adapted to receive a SOI substrate 100 for film-formation, a gas supply means 300 for supplying various gases G1 to G4 necessary to fabricate a single crystal silicon carbide thin film to the film-formation chamber 200, a gas treatment means 500 for treating argon gas as an inert gas G1, propane gas as a hydrocarbon-based gas G2, hydrogen gas as a carrier gas, and oxygen gas G4 supplied to the film-formation chamber 200, and a temperature control means 400 for controlling the temperature of the film-formation chamber 200.
摘要翻译：经济地制造单晶碳化硅薄膜。用于制造单晶碳化硅薄膜的装置包括适于接收用于成膜的SOI衬底100的成膜室200，用于供应制造单晶碳化硅所需的各种气体G1至G4的气体供给装置300 薄膜形成室200，用于处理氩气作为惰性气体G1的气体处理装置500，作为烃类气体G2的丙烷气体，作为载气的氢气和供给到膜的氧气G4 以及用于控制成膜室200的温度的温度控制装置400。

10. 发明授权

US06752869B2 Atomic layer deposition using organometallic complex with &bgr;-diketone ligand 失效
标题翻译：使用有机金属络合物与β-二酮配体的原子层沉积
公开(公告)号：US06752869B2
公开(公告)日：2004-06-22
申请号：US10160111
申请日：2002-06-04
申请人： Jung-hyun Lee , Dae-sig Kim , Yo-sep Min , Young-jin Cho
发明人： Jung-hyun Lee , Dae-sig Kim , Yo-sep Min , Young-jin Cho
IPC分类号： C30B2504
CPC分类号： C23C16/45542 , C23C16/40 , C23C16/405 , C23C16/45553 , C23C16/5096
摘要： An atomic layer deposition (ALD) method, whereby an organometallic complex with a &bgr;-diketone ligand is chemically adsorbed onto a substrate and oxidized by activated oxygen radicals to deposit an atomic metal oxide layer on the substrate, uses reactive oxygen radicals generated using plasma and an organometallic complex having a &bgr;-diketone ligand as a precursor, which could not be used in a thermal ALD method using oxygen or water as an oxidizing agent, to address and solve the problem of the removal of organic substances using organometallic complexes with &bgr;-diketone ligands, thereby enabling diversification of the precursors for ALD and formation of excellent oxide films at low temperatures.
摘要翻译：原子层沉积（ALD）方法，其中具有β-二酮配体的有机金属络合物被化学吸附到基底上并被活性氧自由基氧化以在基底上沉积原子金属氧化物层，使用使用等离子体产生的活性氧自由基，具有β-二酮配体作为前体的有机金属配合物，其不能用于使用氧或水作为氧化剂的热ALD方法，以解决和解决使用有机金属络合物除去有机物质的问题，二酮配体，从而使ALD前体多样化，并在低温下形成优异的氧化膜。

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