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1. 发明申请

US20050142481A1 Cross-linking polymer for organic anti-reflective coating, organic anti-reflective coating composition comprising the same and method for forming photoresist pattern using the same 失效
标题翻译：用于有机抗反射涂层的交联聚合物，包含其的有机抗反射涂料组合物和使用其形成光刻胶图案的方法
公开(公告)号：US20050142481A1
公开(公告)日：2005-06-30
申请号：US10989221
申请日：2004-11-15
申请人： Jae-chang Jung , Cheol-Kyu Bok , Seung-Chan Moon , Ki-soo Shin
发明人： Jae-chang Jung , Cheol-Kyu Bok , Seung-Chan Moon , Ki-soo Shin
IPC分类号： G03F7/11 , C08F8/00 , C08F16/34 , C08F216/14 , C08F216/34 , G03C1/76 , G03F7/004 , G03F7/027 , G03F7/039 , G03F7/09 , G03F7/20 , H01L21/00 , H01L21/027
CPC分类号： G03F7/091 , C08F8/00 , C08F216/34 , C08F2810/20 , C08F116/34
摘要： A cross-linking polymer for an organic anti-reflective coating that is able to improve the uniformity of an ultra-fine photoresist pattern formed using a photolithography process and an ArF light source with 194 nm wavelength. Organic anti-reflective coatings including the same and a method for forming a photoresist pattern using the same are also disclosed. The disclosed cross-linking polymer is capable of preventing scattered reflection from a bottom film layer, eliminating standing wave effect due to alteration of thickness of the photoresist film, and increasing uniformity of the thickness of photoresist pattern. At the same time, the disclosed cross-linking pattern increases the etching velocity of the organic anti-reflective coating so that it can be easily removed.
摘要翻译：用于有机抗反射涂层的交联聚合物，其能够提高使用光刻工艺形成的超细光致抗蚀剂图案的均匀性和具有194nm波长的ArF光源。还公开了包括其的有机抗反射涂层和使用其的形成光致抗蚀剂图案的方法。所公开的交联聚合物能够防止底部膜层的散射反射，消除由于光致抗蚀剂膜的厚度变化引起的驻波效应，并增加光致抗蚀剂图案的厚度的均匀性。同时，所公开的交联图案增加了有机抗反射涂层的蚀刻速度，使得其可以容易地去除。

2. 发明授权

US07205089B2 Cross-linking polymer for organic anti-reflective coating, organic anti-reflective coating composition comprising the same and method for forming photoresist pattern using the same 失效
标题翻译：用于有机抗反射涂层的交联聚合物，包含其的有机抗反射涂料组合物和使用其形成光刻胶图案的方法
公开(公告)号：US07205089B2
公开(公告)日：2007-04-17
申请号：US10989221
申请日：2004-11-15
申请人： Jae-chang Jung , Cheol-Kyu Bok , Seung Chan Moon , Ki-Soo Shin
发明人： Jae-chang Jung , Cheol-Kyu Bok , Seung Chan Moon , Ki-Soo Shin
IPC分类号： G03C1/835 , G03F7/20 , G03F7/30 , G03F7/38 , C08F16/34
CPC分类号： G03F7/091 , C08F8/00 , C08F216/34 , C08F2810/20 , C08F116/34
摘要： A cross-linking polymer for an organic anti-reflective coating that is able to improve the uniformity of an ultra-fine photoresist pattern formed using a photolithography process and an ArF light source with 194 nm wavelength. Organic anti-reflective coatings including the same and a method for forming a photoresist pattern using the same are also disclosed. The disclosed cross-linking polymer is capable of preventing scattered reflection from a bottom film layer, eliminating standing wave effect due to alteration of thickness of the photoresist film, and increasing uniformity of the thickness of photoresist pattern. At the same time, the disclosed cross-linking pattern increases the etching velocity of the organic anti-reflective coating so that it can be easily removed.
摘要翻译：用于有机抗反射涂层的交联聚合物，其能够提高使用光刻工艺形成的超细光致抗蚀剂图案的均匀性和具有194nm波长的ArF光源。还公开了包括其的有机抗反射涂层和使用其的形成光致抗蚀剂图案的方法。所公开的交联聚合物能够防止底部膜层的散射反射，消除由于光致抗蚀剂膜的厚度变化引起的驻波效应，并增加光致抗蚀剂图案的厚度的均匀性。同时，所公开的交联图案增加了有机抗反射涂层的蚀刻速度，使得其可以容易地去除。

3. 发明授权

US07220679B2 Method for forming patterns in a semiconductor device 失效
标题翻译：用于在半导体器件中形成图案的方法
公开(公告)号：US07220679B2
公开(公告)日：2007-05-22
申请号：US10461107
申请日：2003-06-13
申请人： Sung-koo Lee , Jae-chang Jung , Young-sun Hwang , Cheol-kyu Bok , Ki-soo Shin
发明人： Sung-koo Lee , Jae-chang Jung , Young-sun Hwang , Cheol-kyu Bok , Ki-soo Shin
IPC分类号： H01L21/461 , H01L21/4763
CPC分类号： G03F7/091 , G03F7/16 , H01L21/0276
摘要： A method for forming a pattern of a semiconductor device is disclosed which can increase the contact area between a photoresist and an anti-reflective film by performing an etching process on the anti-reflective film in a process of forming a photoresist pattern for a semiconductor device so as to form fine irregularities, thereby preventing collapse of a photoresist pattern. The disclosed method includes: (a) forming an organic anti-reflective film by coating an organic anti-reflective coating composition onto an upper portion of a layer to be etched, and performing a baking process thereto; (b) forming fine irregularities on the organic anti-reflective film by performing an etching process on the formed organic anti-reflective film; and (c) forming a photoresist pattern by coating a photoresist on the upper portion of the organic anti-reflective film, exposing the photoresist and then developing the same.
摘要翻译：公开了一种用于形成半导体器件的图案的方法，其可以通过在形成用于半导体器件的光致抗蚀剂图案的工艺中对抗反射膜执行蚀刻处理来增加光致抗蚀剂和抗反射膜之间的接触面积从而形成细微的凹凸，从而防止光致抗蚀剂图案的塌陷。所公开的方法包括：（a）通过将有机抗反射涂层组合物涂覆在待蚀刻的层的上部上并进行烘烤处理来形成有机抗反射膜; （b）通过对所形成的有机抗反射膜进行蚀刻处理，在有机抗反射膜上形成微小的凹凸; 和（c）通过在有机抗反射膜的上部涂覆光致抗蚀剂形成光致抗蚀剂图案，曝光光致抗蚀剂然后使其显影。

4. 发明授权

US07108957B2 Organic anti-reflective coating composition and method for forming photoresist patterns using the same 失效
标题翻译：有机抗反射涂料组合物及其形成方法
公开(公告)号：US07108957B2
公开(公告)日：2006-09-19
申请号：US10619254
申请日：2003-07-14
申请人： Jae-chang Jung , Ki-soo Shin
发明人： Jae-chang Jung , Ki-soo Shin
IPC分类号： G03F7/032 , G03F7/11 , G03F7/038 , C08K5/54
CPC分类号： C09D183/04 , G03F7/091 , Y10S430/106 , Y10S430/115 , Y10S430/128 , Y10T428/24802 , C08L2666/04
摘要： The present disclosure relates to an organic anti-reflective coating composition and a method for forming photoresist patterns using the same. The anti-reflective coating compositions are useful for preventing reflection of a lower film layer or a substrate of a photoresist film, reducing standing waves caused by light and variations in the thickness of the photoresist itself, and increasing the uniformity of the photoresist patterns. More particularly, the present invention relates to an organic anti-reflective coating composition comprising particular organo-silicon based polymers and a method for forming photoresist patterns using the same. The organic anti-reflective coating composition can prevent excessive absorbency of an anti-reflective film formed therefrom and, thus, minimize the reflectivity of the film so that it can efficiently remove standing waves and increase the uniformity of the photoresist pattern.
摘要翻译：本公开涉及有机抗反射涂料组合物和使用其形成光致抗蚀剂图案的方法。抗反射涂料组合物可用于防止光致抗蚀剂膜的下膜层或基材的反射，减少由光引起的驻波和光致抗蚀剂本身的厚度的变化，并且增加光致抗蚀剂图案的均匀性。更具体地说，本发明涉及包含特定的有机硅基聚合物的有机抗反射涂料组合物以及使用其形成光致抗蚀剂图案的方法。有机抗反射涂层组合物可以防止由其形成的抗反射膜的过度吸收，从而使膜的反射率最小化，使得其可以有效地去除驻波并增加光致抗蚀剂图案的均匀性。

5. 发明申请

US20060166139A1 Organic anti-reflective coating composition and method for forming photoresist patterns using the same 失效
公开(公告)号：US20060166139A1
公开(公告)日：2006-07-27
申请号：US11390511
申请日：2006-03-27
申请人： Jae-chang Jung , Ki-soo Shin
发明人： Jae-chang Jung , Ki-soo Shin
IPC分类号： G03C1/76
CPC分类号： C09D183/04 , G03F7/091 , Y10S430/106 , Y10S430/115 , Y10S430/128 , Y10T428/24802 , C08L2666/04
摘要： The present disclosure relates to an organic anti-reflective coating composition and a method for forming photoresist patterns using the same. The anti-reflective coating compositions are useful for preventing reflection of a lower film layer or a substrate of a photoresist film, reducing standing waves caused by light and variations in the thickness of the photoresist itself, and increasing the uniformity of the photoresist patterns. More particularly, the present invention relates to an organic anti-reflective coating composition comprising particular organo-silicon based polymers and a method for forming photoresist patterns using the same. The organic anti-reflective coating composition can prevent excessive absorbency of an anti-reflective film formed therefrom and, thus, minimize the reflectivity of the film so that it can efficiently remove standing waves and increase the uniformity of the photoresist pattern.

6. 发明授权

US07175974B2 Organic anti-reflective coating composition and method for forming photoresist patterns using the same 失效
标题翻译：有机抗反射涂料组合物及其形成方法
公开(公告)号：US07175974B2
公开(公告)日：2007-02-13
申请号：US11390511
申请日：2006-03-27
申请人： Jae-chang Jung , Ki-soo Shin
发明人： Jae-chang Jung , Ki-soo Shin
IPC分类号： G03F7/075 , G03F7/11 , G03F7/38
CPC分类号： C09D183/04 , G03F7/091 , Y10S430/106 , Y10S430/115 , Y10S430/128 , Y10T428/24802 , C08L2666/04
摘要： The present disclosure relates to an organic anti-reflective coating composition and a method for forming photoresist patterns using the same. The anti-reflective coating compositions are useful for preventing reflection of a lower film layer or a substrate of a photoresist film, reducing standing waves caused by light and variations in the thickness of the photoresist itself, and increasing the uniformity of the photoresist patterns. More particularly, the present invention relates to an organic anti-reflective coating composition comprising particular organo-silicon based polymers and a method for forming photoresist patterns using the same. The organic anti-reflective coating composition can prevent excessive absorbency of an anti-reflective film formed therefrom and, thus, minimize the reflectivity of the film so that it can efficiently remove standing waves and increase the uniformity of the photoresist pattern.
摘要翻译：本公开涉及有机抗反射涂料组合物和使用其形成光致抗蚀剂图案的方法。抗反射涂料组合物可用于防止光致抗蚀剂膜的下膜层或基材的反射，减少由光引起的驻波和光致抗蚀剂本身的厚度的变化，并且增加光致抗蚀剂图案的均匀性。更具体地说，本发明涉及包含特定的有机硅基聚合物的有机抗反射涂料组合物以及使用其形成光致抗蚀剂图案的方法。有机抗反射涂层组合物可以防止由其形成的抗反射膜的过度吸收，从而使膜的反射率最小化，使得其可以有效地去除驻波并增加光致抗蚀剂图案的均匀性。

7. 发明授权

US06764964B2 Method for forming patterns of a semiconductor device 失效
标题翻译：用于形成半导体器件的图案的方法
公开(公告)号：US06764964B2
公开(公告)日：2004-07-20
申请号：US10331527
申请日：2002-12-30
申请人： Young-sun Hwang , Jae-chang Jung , Sung-koo Lee , Chcol-kyu Bok , Ki-soo Shin
发明人： Young-sun Hwang , Jae-chang Jung , Sung-koo Lee , Chcol-kyu Bok , Ki-soo Shin
IPC分类号： H01L2131
CPC分类号： G03F7/091 , H01L21/0276 , H01L21/31144 , H01L21/32139 , Y10S438/949 , Y10S438/952
摘要： A method for forming patterns of a semiconductor device is disclosed which inhibits collapse of photoresist patterns in photoresist pattern-forming processes of the semiconductor device by forming micro-bends in an anti-reflective film to increase the contact area between a photoresist and the anti-reflective film and, simultaneously prevents critical dimension (CD) alteration of the photoresist pattern by creating micro-bends and double-laminating of anti-reflective films with different refractive indices and light-absorbencies.
摘要翻译：公开了一种用于形成半导体器件的图案的方法，其通过在抗反射膜中形成微弯曲来增加光致抗蚀剂和抗反射膜之间的接触面积，从而抑制半导体器件的光致抗蚀剂图案形成过程中光刻胶图案的塌陷，并且通过产生具有不同折射率和光吸收性的抗反射膜的微弯曲和双层压，同时防止光致抗蚀剂图案的临界尺寸（CD）变化。

8. 发明申请

US20050100818A1 Composition for an organic bottom anti-reflective coating and method for forming pattern using the same 失效
标题翻译：有机底部防反射涂层的组合物和使用其形成图案的方法
公开(公告)号：US20050100818A1
公开(公告)日：2005-05-12
申请号：US10910063
申请日：2004-08-03
申请人： Jae-chang Jung
发明人： Jae-chang Jung
IPC分类号： G03F7/004 , G03C1/76 , G03F7/038 , G03F7/09
CPC分类号： G03F7/091 , G03F7/0382 , Y10S430/11 , Y10S430/124
摘要： Disclosed are a composition for an organic bottom anti-reflective coating able to improve the uniformity of a photoresist pattern with respect to an ultra-fine pattern formation process among processes for manufacturing semiconductor device, which prevents scattered reflection from the bottom film layer and eliminating the standing wave effect due to alteration of the thickness of the photoresist film itself resulting in increase of uniformity of the photoresist pattern. The composition for organic bottom anti-reflective coating is able to reduce amount of polyvinylphenol by introducing a specific light absorbent agent having an etching velocity higher than of the polyvinylphenol, thus notably improving the etching velocity for the organic anti-reflective coating by about 1.5 times, so that and the present composition prevents over-etching of the photoresist to make it possible to conduct a smooth etching process for a layer to be etched.
摘要翻译：公开了一种用于有机底部抗反射涂层的组合物，其能够在半导体器件的制造工艺之间相对于超细图案形成工艺提高光致抗蚀剂图案的均匀性，其防止来自底部薄膜层的散射反射并消除由于光致抗蚀剂膜本身的厚度变化引起的驻波效应导致光致抗蚀剂图案的均匀性增加。有机底部防反射涂层的组合物能够通过引入具有高于聚乙烯基苯酚的蚀刻速度的特定光吸收剂来减少聚乙烯基苯酚的量，从而显着地将有机抗反射涂层的蚀刻速度提高约1.5倍，因此和本发明的组合物防止光致抗蚀剂的过度蚀刻，使得可以对待蚀刻的层进行平滑的蚀刻工艺。

9. 发明申请

US20050084798A1 Light absorbent agent polymer useful for organic anti-reflective coating, its preparation method and organic anti-reflective coating composition comprising the same 失效
标题翻译：用于有机抗反射涂层的光吸收剂聚合物，其制备方法和包含其的有机抗反射涂料组合物
公开(公告)号：US20050084798A1
公开(公告)日：2005-04-21
申请号：US10962847
申请日：2004-10-12
申请人： Jae-chang Jung , Keun Kong , Young-sik Kim
发明人： Jae-chang Jung , Keun Kong , Young-sik Kim
IPC分类号： G03F7/039 , G03C1/76 , G03F7/09
CPC分类号： G03F7/091 , Y10S430/106
摘要： Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of bottom film layer or substrate and reduce standing waves caused by variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor device, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising the light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.
摘要翻译：公开了一种用于有机抗反射涂层的光吸收剂聚合物，其可以防止底部薄膜层或基底的扩散光反射，并减少由光致抗蚀剂本身的厚度变化引起的驻波，从而增加光致抗蚀剂图案的均匀性通过在制造半导体器件的工艺中使用193nm的ArF，形成用于光刻的超精细图案的光刻工艺及其制备方法。此外，本发明公开了一种有机抗反射涂层组合物，其包含用于有机抗反射涂层的光吸收剂聚合物和使用该涂料组合物的图案形成方法。

10. 发明授权

US06835532B2 Organic anti-reflective coating composition and method for forming photoresist patterns using the same 失效
标题翻译：有机抗反射涂料组合物及其形成方法
公开(公告)号：US06835532B2
公开(公告)日：2004-12-28
申请号：US10357876
申请日：2003-02-04
申请人： Jae-chang Jung
发明人： Jae-chang Jung
IPC分类号： G03C1492
CPC分类号： G03F7/091 , Y10S430/106
摘要： An organic anti-reflective coating composition and a method for forming photoresist patterns using the same are disclosed which can prevent reflection of the lower film layer or substrate and reduce standing waves caused by light and variation of in the thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, with respect to a microfine pattern-forming process using photoresists for a photolithography by using ArF with 193 nm wavelength among processes for manufacturing semiconductor device. More particularly, an organic anti-reflective coating composition and a method for forming photoresist patterns using the same are disclosed which can obtain perpendicular photoresist patterns and thus inhibit breakdown and/or collapse of the patterns by comprising an acid-diffusion inhibitor.
摘要翻译：公开了一种有机抗反射涂层组合物和使用其形成光致抗蚀剂图案的方法，其可以防止下膜层或基板的反射，并减少由光引起的驻波和光致抗蚀剂本身的厚度的变化，相对于使用光致抗蚀剂进行光刻的微细图案形成方法，通过在制造半导体器件的工艺中使用193nm波长的ArF，增加光致抗蚀剂图案的均匀性。更具体地，公开了一种有机抗反射涂料组合物和使用其形成光致抗蚀剂图案的方法，其可以获得垂直的光致抗蚀剂图案，从而通过包含酸扩散抑制剂来抑制图案的破坏和/或塌陷。

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