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1. 发明授权

US07238653B2 Cleaning solution for photoresist and method for forming pattern using the same 有权
标题翻译：用于光致抗蚀剂的清洁溶液和使用其形成图案的方法
公开(公告)号：US07238653B2
公开(公告)日：2007-07-03
申请号：US10723029
申请日：2003-11-26
申请人： Geun Su Lee , Cheol Kyu Bok , Young Sun Hwang , Sung Koo Lee , Seung Chan Moon , Ki Soo Shin
发明人： Geun Su Lee , Cheol Kyu Bok , Young Sun Hwang , Sung Koo Lee , Seung Chan Moon , Ki Soo Shin
IPC分类号： C11D1/72
CPC分类号： G03F7/322 , C11D1/345 , C11D3/30 , C11D11/0047
摘要： Cleaning solutions for photoresist are disclosed which are useful for cleaning a semiconductor substrate in the last step of development when photoresist patterns are formed. Also, methods for forming photoresist patterns using the same are disclosed. The disclosed cleaning solution comprises H2O as a solution, a surfactant which is phosphate-alcoholamine salt represented by Formula 1, and an alcohol compound. The disclosed cleaning solution has lower surface tension than that of distilled water which has been used for conventional cleaning solutions, thereby improving resistance to photoresist pattern collapse and stabilizing the photoresist pattern formation. wherein R, x, y, z, a and b are as defined in the specification.
摘要翻译：公开了用于光致抗蚀剂的清洁溶液，其在形成光致抗蚀剂图案时在开发的最后步骤中用于清洁半导体衬底。此外，公开了使用其形成光致抗蚀剂图案的方法。所公开的洗涤溶液包含作为溶液的H 2 O 2，作为由式1表示的磷酸 - 醇胺盐的表面活性剂和醇化合物。所公开的清洗溶液具有比用于常规清洁溶液的蒸馏水低的表面张力，从而提高抗光刻胶图案的崩溃和稳定光致抗蚀剂图案形成。其中R，x，y，z，a和b如说明书中所定义。

2. 发明授权

US07220679B2 Method for forming patterns in a semiconductor device 失效
标题翻译：用于在半导体器件中形成图案的方法
公开(公告)号：US07220679B2
公开(公告)日：2007-05-22
申请号：US10461107
申请日：2003-06-13
申请人： Sung-koo Lee , Jae-chang Jung , Young-sun Hwang , Cheol-kyu Bok , Ki-soo Shin
发明人： Sung-koo Lee , Jae-chang Jung , Young-sun Hwang , Cheol-kyu Bok , Ki-soo Shin
IPC分类号： H01L21/461 , H01L21/4763
CPC分类号： G03F7/091 , G03F7/16 , H01L21/0276
摘要： A method for forming a pattern of a semiconductor device is disclosed which can increase the contact area between a photoresist and an anti-reflective film by performing an etching process on the anti-reflective film in a process of forming a photoresist pattern for a semiconductor device so as to form fine irregularities, thereby preventing collapse of a photoresist pattern. The disclosed method includes: (a) forming an organic anti-reflective film by coating an organic anti-reflective coating composition onto an upper portion of a layer to be etched, and performing a baking process thereto; (b) forming fine irregularities on the organic anti-reflective film by performing an etching process on the formed organic anti-reflective film; and (c) forming a photoresist pattern by coating a photoresist on the upper portion of the organic anti-reflective film, exposing the photoresist and then developing the same.
摘要翻译：公开了一种用于形成半导体器件的图案的方法，其可以通过在形成用于半导体器件的光致抗蚀剂图案的工艺中对抗反射膜执行蚀刻处理来增加光致抗蚀剂和抗反射膜之间的接触面积从而形成细微的凹凸，从而防止光致抗蚀剂图案的塌陷。所公开的方法包括：（a）通过将有机抗反射涂层组合物涂覆在待蚀刻的层的上部上并进行烘烤处理来形成有机抗反射膜; （b）通过对所形成的有机抗反射膜进行蚀刻处理，在有机抗反射膜上形成微小的凹凸; 和（c）通过在有机抗反射膜的上部涂覆光致抗蚀剂形成光致抗蚀剂图案，曝光光致抗蚀剂然后使其显影。

3. 发明申请

US20120142194A1 METHOD OF FORMING SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：形成半导体存储器件的方法
公开(公告)号：US20120142194A1
公开(公告)日：2012-06-07
申请号：US13310943
申请日：2011-12-05
申请人： Young Sun HWANG
发明人： Young Sun HWANG
IPC分类号： H01L21/311
CPC分类号： H01L21/0337 , H01L21/0338 , H01L21/28273 , H01L27/11524
摘要： A method of forming semiconductor memory device includes forming first to fourth spacers over a target layer including a first region and second regions adjacent to the first region so that a first spacer group including the first spacers spaced at a first interval is formed in the first region of the target layer, a second spacer group including the second spacers spaced at second intervals is formed in the second regions, a third spacer is formed between the first and the second spacer groups, and fourth spacers are formed between the third spacer and the first spacer group; forming an overlap pattern blocking the target layer; and forming first patterns, spaced at the first interval and each formed to have a first width, in the first region and second patterns, spaced at the second intervals and each formed to have a second width, in the second regions.
摘要翻译：一种形成半导体存储器件的方法包括在包括第一区域和邻近第一区域的第二区域的目标层上形成第一至第四隔离物，使得在第一区域中形成包括以第一间隔隔开的第一间隔物的第一间隔基团在第二区域中形成包括以第二间隔隔开的第二间隔物的第二间隔基团，在第一和第二间隔基之间形成第三间隔物，第四隔离物形成在第三隔离物和第一间隔物之间间隔基; 形成阻挡目标层的重叠图案; 以及形成第一图案，其间隔第一间隔并且每个形成为具有第一宽度的第一区域和第二图案，第二图案间隔第二间隔并且在第二区域中形成为具有第二宽度。

4. 发明申请

US20080227300A1 Method for manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20080227300A1
公开(公告)日：2008-09-18
申请号：US11987757
申请日：2007-12-04
申请人： Young Sun Hwang
发明人： Young Sun Hwang
IPC分类号： H01L21/467
CPC分类号： H01L21/0337
摘要： A method of manufacturing a semiconductor device prevents a pattern bridge phenomenon generated by a proximity effect between patterns and a thickness lowering phenomenon of the pattern. As a result, a length of the major axis required in characteristics of the device is secured to improve an electric characteristic and an overlapping margin. A photoresist pattern is formed to have a line/space type, thereby securing a DOF margin in comparison with a photoresist pattern of an island type.
摘要翻译：制造半导体器件的方法防止由图案之间的接近效应和图案的厚度降低现象产生的图案桥接现象。结果，确保了器件特性所需的长轴的长度，以改善电特性和重叠余量。形成具有线/空间类型的光致抗蚀剂图案，从而与孤岛型的光致抗蚀剂图案相比确保DOF余量。

5. 发明授权

US06764964B2 Method for forming patterns of a semiconductor device 失效
标题翻译：用于形成半导体器件的图案的方法
公开(公告)号：US06764964B2
公开(公告)日：2004-07-20
申请号：US10331527
申请日：2002-12-30
申请人： Young-sun Hwang , Jae-chang Jung , Sung-koo Lee , Chcol-kyu Bok , Ki-soo Shin
发明人： Young-sun Hwang , Jae-chang Jung , Sung-koo Lee , Chcol-kyu Bok , Ki-soo Shin
IPC分类号： H01L2131
CPC分类号： G03F7/091 , H01L21/0276 , H01L21/31144 , H01L21/32139 , Y10S438/949 , Y10S438/952
摘要： A method for forming patterns of a semiconductor device is disclosed which inhibits collapse of photoresist patterns in photoresist pattern-forming processes of the semiconductor device by forming micro-bends in an anti-reflective film to increase the contact area between a photoresist and the anti-reflective film and, simultaneously prevents critical dimension (CD) alteration of the photoresist pattern by creating micro-bends and double-laminating of anti-reflective films with different refractive indices and light-absorbencies.
摘要翻译：公开了一种用于形成半导体器件的图案的方法，其通过在抗反射膜中形成微弯曲来增加光致抗蚀剂和抗反射膜之间的接触面积，从而抑制半导体器件的光致抗蚀剂图案形成过程中光刻胶图案的塌陷，并且通过产生具有不同折射率和光吸收性的抗反射膜的微弯曲和双层压，同时防止光致抗蚀剂图案的临界尺寸（CD）变化。

6. 发明授权

US08161667B2 Elastic sole and its shoes having elastic reaction force and shock absorption 有权
标题翻译：弹性鞋底及其鞋具有弹性反作用力和减震性
公开(公告)号：US08161667B2
公开(公告)日：2012-04-24
申请号：US12621384
申请日：2009-11-18
申请人： Young Sun Hwang
发明人： Young Sun Hwang
IPC分类号： A43B13/18 , A43B13/00
CPC分类号： A43B9/00 , A43B13/12 , A43B13/181 , A43B13/183 , A43B21/26
摘要： Disclosed are an elastic sole member which optimizes between a shock absorbing function and repulsive elastic force, between which a tradeoff relationship exists, and a shoe with the elastic sole member. The elastic sole member includes a sole body which is upwardly inclined toward a back end thereof, and an elastic member comprised of a fixing piece inserted through and fixed in a space formed through an upwardly inclined back portion of the sole body, and an elastic plate extending from the fixing plate while it is downwardly inclined and having a first end exposed to the outside and a second end spaced apart from the sole body, in which the elastic sole member elastically contracts when external force is applied to a back portion of the sole body while the fixing piece serves as the elastic support axis and provides elastic recovery force when the external force is removed.
摘要翻译：公开了一种弹性鞋底构件，其在减震功能和排斥弹性力之间存在折衷关系和具有弹性鞋底构件的鞋子之间优化。弹性鞋底构件包括朝向其后端向上倾斜的鞋底体，以及弹性构件，其包括插入并固定在通过鞋底本体的向上倾斜的后部形成的空间中的固定片和弹性板从固定板向下倾斜并且具有暴露于外部的第一端和与鞋底主体间隔开的第二端，其中当外力施加到鞋底的后部时，弹性鞋底件弹性收缩当固定件用作弹性支撑轴线并且当外力被移除时提供弹性恢复力。

7. 发明申请

US20100281709A1 Elastic Shoes For Cushioning Against Impact 审中-公开
标题翻译：弹力鞋抵抗冲击
公开(公告)号：US20100281709A1
公开(公告)日：2010-11-11
申请号：US12834813
申请日：2010-07-12
申请人： Young Sun Hwang
发明人： Young Sun Hwang
IPC分类号： A43B13/28 , A43B13/18
CPC分类号： A43B7/24 , A43B3/0063 , A43B13/146 , A43B13/183 , A43B13/188 , A43B13/206
摘要： The invention relates to a shoe provided with an outsole including an anti-distorting portion formed to extend from a rear portion to a front portion of the outsole to prevent the shoe from distorting, a shock-absorbing portion disposed at the rear portion of the outsole to absorb the external force applied to the heel portion of the wearer's foot when landing, and an elasticity-enhancing portion disposed at the front portion of the outsole in order to supplement actuating force using elastic force when leaving the ground. The shoe is advantageous in that it is possible to prevent the shoe from distorting while actions of landing and leaving the ground are repeated, to decrease the shock of the maximum load applied to the heel portion of the wearer's foot, and to supplement the actuating force with elastic recovery force when advancing.
摘要翻译：本发明涉及一种设有外底的鞋，该外底包括形成为从外底的后部延伸到前部的防扭曲部分，以防止鞋变形，设置在外底后部的减震部以吸收在着陆时施加到穿着者脚部的跟部的外力，以及设置在外底的前部的弹性增强部，以便在离开地面时使用弹力补充致动力。鞋子的优点在于，可以防止鞋子在着陆和离开地面的作用被重复时变形，以减少施加到穿着者脚部的跟部的最大负荷的冲击，并补充致动力具有弹性恢复力。

8. 发明授权

US08518831B2 Method of forming semiconductor memory device 有权
标题翻译：形成半导体存储器件的方法
公开(公告)号：US08518831B2
公开(公告)日：2013-08-27
申请号：US13310943
申请日：2011-12-05
申请人： Young Sun Hwang
发明人： Young Sun Hwang
IPC分类号： H01L21/311
CPC分类号： H01L21/0337 , H01L21/0338 , H01L21/28273 , H01L27/11524
摘要： A method of forming semiconductor memory device includes forming first to fourth spacers over a target layer including a first region and second regions adjacent to the first region so that a first spacer group including the first spacers spaced at a first interval is formed in the first region of the target layer, a second spacer group including the second spacers spaced at second intervals is formed in the second regions, a third spacer is formed between the first and the second spacer groups, and fourth spacers are formed between the third spacer and the first spacer group; forming an overlap pattern blocking the target layer; and forming first patterns, spaced at the first interval and each formed to have a first width, in the first region and second patterns, spaced at the second intervals and each formed to have a second width, in the second regions.
摘要翻译：一种形成半导体存储器件的方法包括在包括第一区域和邻近第一区域的第二区域的目标层上形成第一至第四隔离物，使得在第一区域中形成包括以第一间隔隔开的第一间隔物的第一间隔基团在第二区域中形成包括以第二间隔隔开的第二间隔物的第二间隔基团，在第一和第二间隔基之间形成第三间隔物，第四隔离物形成在第三隔离物和第一间隔物之间间隔基; 形成阻挡目标层的重叠图案; 以及形成第一图案，其间隔第一间隔并且每个形成为具有第一宽度的第一区域和第二图案，第二图案间隔第二间隔并且在第二区域中形成为具有第二宽度。

9. 发明申请

US20100058617A1 Elastic Sole And Its Shoes Having Elastic Reaction Force And Shock Absorption 有权
标题翻译：弹性鞋底及其鞋弹性反作用力和冲击吸收
公开(公告)号：US20100058617A1
公开(公告)日：2010-03-11
申请号：US12621384
申请日：2009-11-18
申请人： Young Sun Hwang
发明人： Young Sun Hwang
IPC分类号： A43B13/18 , A43B13/38
CPC分类号： A43B9/00 , A43B13/12 , A43B13/181 , A43B13/183 , A43B21/26
摘要： Disclosed are an elastic sole member which optimizes between a shock absorbing function and repulsive elastic force, between which a tradeoff relationship exists, and a shoe with the elastic sole member. The elastic sole member includes a sole body which is upwardly inclined toward a back end thereof, and an elastic member comprised of a fixing piece inserted through and fixed in a space formed through an upwardly inclined back portion of the sole body, and an elastic plate extending from the fixing plate while it is downwardly inclined and having a first end exposed to the outside and a second end spaced apart from the sole body, in which the elastic sole member elastically contracts when external force is applied to a back portion of the sole body while the fixing piece serves as the elastic support axis and provides elastic recovery force when the external force is removed.
摘要翻译：公开了一种弹性鞋底构件，其在减震功能和排斥弹性力之间存在折衷关系和具有弹性鞋底构件的鞋子之间优化。弹性鞋底构件包括朝向其后端向上倾斜的鞋底体，以及弹性构件，其包括插入并固定在通过鞋底本体的向上倾斜的后部形成的空间中的固定片和弹性板从固定板向下倾斜并且具有暴露于外部的第一端和与鞋底主体间隔开的第二端，其中当外力施加到鞋底的后部时，弹性鞋底件弹性收缩当固定件用作弹性支撑轴线并且当外力被移除时提供弹性恢复力。

10. 发明授权

US07300880B2 Methods for forming fine photoresist patterns 失效
标题翻译：形成精细光刻胶图案的方法
公开(公告)号：US07300880B2
公开(公告)日：2007-11-27
申请号：US10719083
申请日：2003-11-21
申请人： Young Sun Hwang , Jae Chang Jung
发明人： Young Sun Hwang , Jae Chang Jung
IPC分类号： H01L21/302
CPC分类号： H01L21/0271 , Y10T428/24281
摘要： A method of forming a fine pattern by a tri-layer resist process to overcome a bi-layer resist process is disclosed. When a fine pattern is formed using a silicon photoresist, a gas protection film is coated on a photoresist to prevent exhaustion of silicon gas generated from the photoresist in light examination of high energy. As a result, lens of exposure equipment may be prevented from being contaminated.
摘要翻译：公开了通过三层抗蚀剂工艺形成精细图案以克服双层抗蚀剂工艺的方法。当使用硅光致抗蚀剂形成精细图案时，气体保护膜涂覆在光致抗蚀剂上以防止在高能量的光检测中由光致抗蚀剂产生的硅气体的耗尽。因此，可以防止曝光设备的透镜被污染。

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