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1. 发明授权

US07175974B2 Organic anti-reflective coating composition and method for forming photoresist patterns using the same 失效
标题翻译：有机抗反射涂料组合物及其形成方法
公开(公告)号：US07175974B2
公开(公告)日：2007-02-13
申请号：US11390511
申请日：2006-03-27
申请人： Jae-chang Jung , Ki-soo Shin
发明人： Jae-chang Jung , Ki-soo Shin
IPC分类号： G03F7/075 , G03F7/11 , G03F7/38
CPC分类号： C09D183/04 , G03F7/091 , Y10S430/106 , Y10S430/115 , Y10S430/128 , Y10T428/24802 , C08L2666/04
摘要： The present disclosure relates to an organic anti-reflective coating composition and a method for forming photoresist patterns using the same. The anti-reflective coating compositions are useful for preventing reflection of a lower film layer or a substrate of a photoresist film, reducing standing waves caused by light and variations in the thickness of the photoresist itself, and increasing the uniformity of the photoresist patterns. More particularly, the present invention relates to an organic anti-reflective coating composition comprising particular organo-silicon based polymers and a method for forming photoresist patterns using the same. The organic anti-reflective coating composition can prevent excessive absorbency of an anti-reflective film formed therefrom and, thus, minimize the reflectivity of the film so that it can efficiently remove standing waves and increase the uniformity of the photoresist pattern.
摘要翻译：本公开涉及有机抗反射涂料组合物和使用其形成光致抗蚀剂图案的方法。抗反射涂料组合物可用于防止光致抗蚀剂膜的下膜层或基材的反射，减少由光引起的驻波和光致抗蚀剂本身的厚度的变化，并且增加光致抗蚀剂图案的均匀性。更具体地说，本发明涉及包含特定的有机硅基聚合物的有机抗反射涂料组合物以及使用其形成光致抗蚀剂图案的方法。有机抗反射涂层组合物可以防止由其形成的抗反射膜的过度吸收，从而使膜的反射率最小化，使得其可以有效地去除驻波并增加光致抗蚀剂图案的均匀性。

2. 发明授权

US06998442B2 Organic anti-reflective coating polymers, anti-reflective coating composition comprising the same and preparation methods thereof 失效
公开(公告)号：US06998442B2
公开(公告)日：2006-02-14
申请号：US10702977
申请日：2003-11-06
申请人： Min-Ho Jung , Jae-Chang Jung , Geun-Su Lee , Ki-Soo Shin
发明人： Min-Ho Jung , Jae-Chang Jung , Geun-Su Lee , Ki-Soo Shin
IPC分类号： C08L33/14
CPC分类号： G03F7/091 , C08F212/14 , C08F220/28
摘要： An organic anti-reflective polymer which prevents back reflection of lower film layers and eliminates standing wave that is occurred by a thickness change of photoresist and light, in a process for fabricating ultrafine patterns that use photoresist for lithography by using 193 nm ArF and its preparation method. More particularly, the organic anti-reflective polymer of the present invention is useful for fabricating ultrafine patterns of 64M, 256M, 1G, and 4G DRAM semiconductor devices. A composition containing such organic anti-reflective polymer, an anti-reflective coating layer made therefrom and a preparation method thereof.

3. 发明申请

US20050014089A1 Organic anti-reflective coating polymer, its preparation method and organic anti-reflective coating composition comprising the same 失效
标题翻译：有机抗反射涂料聚合物，其制备方法和包含其的有机抗反射涂料组合物
公开(公告)号：US20050014089A1
公开(公告)日：2005-01-20
申请号：US10811558
申请日：2004-03-29
申请人： Geun-soo Lee , Cheol-kyu Bok , Seung-chan Moon , Ki-soo Shin , Won-wook Lee
发明人： Geun-soo Lee , Cheol-kyu Bok , Seung-chan Moon , Ki-soo Shin , Won-wook Lee
IPC分类号： G03F7/11 , C08F130/02 , C08L29/04 , C09D5/33 , C09D143/02 , G03C1/76 , G03F7/09 , H01L21/027
CPC分类号： G03F7/091
摘要： Disclosed are an organic anti-reflective coating polymer having a structure represented by the following formula I, its preparation method and an organic anti-reflective coating composition with respect to an ultra-fine pattern formation process of the photoresist for photolithography technique using ArF light source with a wavelength of 193 nm or VUV light source with a wavelength of 157 nm. An organic anti-reflective coating polymer capable of protecting a photoresist from amines in the atmosphere to minimize the post exposure delay effect after exposure to light and, at the same time, enhances notching status, such as, a pattern distortion caused by diffused reflection, and reducing reflection rate to minimize the swing effect. wherein m is an integer ranging from 5 to 5000.
摘要翻译：本发明公开了一种有机抗反射涂层聚合物，其具有由下式I表示的结构，其制备方法和有机抗反射涂层组合物相对于使用ArF光源的光刻技术的光致抗蚀剂的超细图案形成方法波长为193nm，波长157nm的VUV光源。能够在大气中保护光致抗蚀剂免受胺的影响的有机抗反射涂层聚合物，以使曝光后的曝光后延迟效果最小化，同时增加凹陷状态，例如由扩散反射引起的图案变形，并减少反射率以最小化摆动效果。其中m为5至5000的整数。

4. 发明授权

US06764964B2 Method for forming patterns of a semiconductor device 失效
标题翻译：用于形成半导体器件的图案的方法
公开(公告)号：US06764964B2
公开(公告)日：2004-07-20
申请号：US10331527
申请日：2002-12-30
申请人： Young-sun Hwang , Jae-chang Jung , Sung-koo Lee , Chcol-kyu Bok , Ki-soo Shin
发明人： Young-sun Hwang , Jae-chang Jung , Sung-koo Lee , Chcol-kyu Bok , Ki-soo Shin
IPC分类号： H01L2131
CPC分类号： G03F7/091 , H01L21/0276 , H01L21/31144 , H01L21/32139 , Y10S438/949 , Y10S438/952
摘要： A method for forming patterns of a semiconductor device is disclosed which inhibits collapse of photoresist patterns in photoresist pattern-forming processes of the semiconductor device by forming micro-bends in an anti-reflective film to increase the contact area between a photoresist and the anti-reflective film and, simultaneously prevents critical dimension (CD) alteration of the photoresist pattern by creating micro-bends and double-laminating of anti-reflective films with different refractive indices and light-absorbencies.
摘要翻译：公开了一种用于形成半导体器件的图案的方法，其通过在抗反射膜中形成微弯曲来增加光致抗蚀剂和抗反射膜之间的接触面积，从而抑制半导体器件的光致抗蚀剂图案形成过程中光刻胶图案的塌陷，并且通过产生具有不同折射率和光吸收性的抗反射膜的微弯曲和双层压，同时防止光致抗蚀剂图案的临界尺寸（CD）变化。

5. 发明申请

US20120293281A1 MULTI MODE FILTER FOR REALIZING WIDE BAND USING CAPACITIVE COUPLING / INDUCTIVE COUPLING AND CAPABLE OF TUNING COUPLING VALUE 有权
标题翻译：用于使用电容耦合/感应耦合实现宽带的多模式滤波器和调谐耦合值的能力
公开(公告)号：US20120293281A1
公开(公告)日：2012-11-22
申请号：US13474435
申请日：2012-05-17
申请人： Dong-Wan CHUN , Jae-Wong JANG , Ki-Soo SHIN
发明人： Dong-Wan CHUN , Jae-Wong JANG , Ki-Soo SHIN
IPC分类号： H01P1/20
CPC分类号： H01P1/2086 , H01P1/2084 , H01P7/06 , H01P7/105
摘要： A multi-mode filter for realizing wide band using capacitive coupling and inductive coupling and capable of tuning coupling value is disclosed. The multi-mode filter includes a housing; a first cavity and a second cavity formed in the housing; a first resonator located in the first cavity, a second resonator located in the second cavity, a wall configured to separate the first cavity from the second cavity; and a first coupling element, wherein a groove is formed between the housing and the wall, the first coupling element is inserted in the groove in crossing direction to the wall, one part of the first coupling element is disposed in the first cavity, another part of the first coupling element is disposed in the second cavity, and the first coupling element is connected to a ground.
摘要翻译：公开了一种使用电容耦合和电感耦合实现宽带并能够调谐耦合值的多模滤波器。多模式过滤器包括壳体; 在壳体中形成的第一腔和第二腔; 位于第一空腔中的第一谐振器，位于第二空腔中的第二谐振器，被配置为将第一空腔与第二空腔分离的壁; 以及第一联接元件，其中在所述壳体和所述壁之间形成有凹槽，所述第一联接元件在与所述壁交叉的方向上插入所述凹槽中，所述第一联接元件的一部分设置在所述第一腔体中，第一耦合元件设置在第二空腔中，并且第一耦合元件连接到地面。

6. 发明授权

US07238653B2 Cleaning solution for photoresist and method for forming pattern using the same 有权
标题翻译：用于光致抗蚀剂的清洁溶液和使用其形成图案的方法
公开(公告)号：US07238653B2
公开(公告)日：2007-07-03
申请号：US10723029
申请日：2003-11-26
申请人： Geun Su Lee , Cheol Kyu Bok , Young Sun Hwang , Sung Koo Lee , Seung Chan Moon , Ki Soo Shin
发明人： Geun Su Lee , Cheol Kyu Bok , Young Sun Hwang , Sung Koo Lee , Seung Chan Moon , Ki Soo Shin
IPC分类号： C11D1/72
CPC分类号： G03F7/322 , C11D1/345 , C11D3/30 , C11D11/0047
摘要： Cleaning solutions for photoresist are disclosed which are useful for cleaning a semiconductor substrate in the last step of development when photoresist patterns are formed. Also, methods for forming photoresist patterns using the same are disclosed. The disclosed cleaning solution comprises H2O as a solution, a surfactant which is phosphate-alcoholamine salt represented by Formula 1, and an alcohol compound. The disclosed cleaning solution has lower surface tension than that of distilled water which has been used for conventional cleaning solutions, thereby improving resistance to photoresist pattern collapse and stabilizing the photoresist pattern formation. wherein R, x, y, z, a and b are as defined in the specification.
摘要翻译：公开了用于光致抗蚀剂的清洁溶液，其在形成光致抗蚀剂图案时在开发的最后步骤中用于清洁半导体衬底。此外，公开了使用其形成光致抗蚀剂图案的方法。所公开的洗涤溶液包含作为溶液的H 2 O 2，作为由式1表示的磷酸 - 醇胺盐的表面活性剂和醇化合物。所公开的清洗溶液具有比用于常规清洁溶液的蒸馏水低的表面张力，从而提高抗光刻胶图案的崩溃和稳定光致抗蚀剂图案形成。其中R，x，y，z，a和b如说明书中所定义。

7. 发明授权

US07220679B2 Method for forming patterns in a semiconductor device 失效
标题翻译：用于在半导体器件中形成图案的方法
公开(公告)号：US07220679B2
公开(公告)日：2007-05-22
申请号：US10461107
申请日：2003-06-13
申请人： Sung-koo Lee , Jae-chang Jung , Young-sun Hwang , Cheol-kyu Bok , Ki-soo Shin
发明人： Sung-koo Lee , Jae-chang Jung , Young-sun Hwang , Cheol-kyu Bok , Ki-soo Shin
IPC分类号： H01L21/461 , H01L21/4763
CPC分类号： G03F7/091 , G03F7/16 , H01L21/0276
摘要： A method for forming a pattern of a semiconductor device is disclosed which can increase the contact area between a photoresist and an anti-reflective film by performing an etching process on the anti-reflective film in a process of forming a photoresist pattern for a semiconductor device so as to form fine irregularities, thereby preventing collapse of a photoresist pattern. The disclosed method includes: (a) forming an organic anti-reflective film by coating an organic anti-reflective coating composition onto an upper portion of a layer to be etched, and performing a baking process thereto; (b) forming fine irregularities on the organic anti-reflective film by performing an etching process on the formed organic anti-reflective film; and (c) forming a photoresist pattern by coating a photoresist on the upper portion of the organic anti-reflective film, exposing the photoresist and then developing the same.
摘要翻译：公开了一种用于形成半导体器件的图案的方法，其可以通过在形成用于半导体器件的光致抗蚀剂图案的工艺中对抗反射膜执行蚀刻处理来增加光致抗蚀剂和抗反射膜之间的接触面积从而形成细微的凹凸，从而防止光致抗蚀剂图案的塌陷。所公开的方法包括：（a）通过将有机抗反射涂层组合物涂覆在待蚀刻的层的上部上并进行烘烤处理来形成有机抗反射膜; （b）通过对所形成的有机抗反射膜进行蚀刻处理，在有机抗反射膜上形成微小的凹凸; 和（c）通过在有机抗反射膜的上部涂覆光致抗蚀剂形成光致抗蚀剂图案，曝光光致抗蚀剂然后使其显影。

8. 发明授权

US07198887B2 Organic anti-reflective coating polymer, its preparation method and organic anti-reflective coating composition comprising the same 失效
标题翻译：有机抗反射涂料聚合物，其制备方法和包含其的有机抗反射涂料组合物
公开(公告)号：US07198887B2
公开(公告)日：2007-04-03
申请号：US10811558
申请日：2004-03-29
申请人： Geun-soo Lee , Cheol-kyu Bok , Seung-chan Moon , Ki-soo Shin , Won-wook Lee
发明人： Geun-soo Lee , Cheol-kyu Bok , Seung-chan Moon , Ki-soo Shin , Won-wook Lee
IPC分类号： G03F7/20 , G03F7/30 , G03C1/825 , G03C1/835
CPC分类号： G03F7/091
摘要： Disclosed are an organic anti-reflective coating polymer having a structure represented by the following formula I, its preparation method and an organic anti-reflective coating composition with respect to an ultra-fine pattern formation process of the photoresist for photolithography technique using ArF light source with a wavelength of 193 nm or VUV light source with a wavelength of 157 nm. An organic anti-reflective coating polymer capable of protecting a photoresist from amines in the atmosphere to minimize the post exposure delay effect after exposure to light and, at the same time, enhances notching status, such as, a pattern distortion caused by diffused reflection, and reducing reflection rate to minimize the swing effect. wherein m is an integer ranging from 5 to 5000.
摘要翻译：本发明公开了一种有机抗反射涂层聚合物，其具有由下式I表示的结构，其制备方法和有机抗反射涂层组合物相对于使用ArF光源的光刻技术的光致抗蚀剂的超细图案形成方法波长为193nm，波长157nm的VUV光源。能够在大气中保护光致抗蚀剂免受胺的影响的有机抗反射涂层聚合物，以使曝光后的曝光后延迟效果最小化，同时增加凹陷状态，例如由扩散反射引起的图案变形，并减少反射率以最小化摆动效果。

9. 发明申请

US20050142481A1 Cross-linking polymer for organic anti-reflective coating, organic anti-reflective coating composition comprising the same and method for forming photoresist pattern using the same 失效
标题翻译：用于有机抗反射涂层的交联聚合物，包含其的有机抗反射涂料组合物和使用其形成光刻胶图案的方法
公开(公告)号：US20050142481A1
公开(公告)日：2005-06-30
申请号：US10989221
申请日：2004-11-15
申请人： Jae-chang Jung , Cheol-Kyu Bok , Seung-Chan Moon , Ki-soo Shin
发明人： Jae-chang Jung , Cheol-Kyu Bok , Seung-Chan Moon , Ki-soo Shin
IPC分类号： G03F7/11 , C08F8/00 , C08F16/34 , C08F216/14 , C08F216/34 , G03C1/76 , G03F7/004 , G03F7/027 , G03F7/039 , G03F7/09 , G03F7/20 , H01L21/00 , H01L21/027
CPC分类号： G03F7/091 , C08F8/00 , C08F216/34 , C08F2810/20 , C08F116/34
摘要： A cross-linking polymer for an organic anti-reflective coating that is able to improve the uniformity of an ultra-fine photoresist pattern formed using a photolithography process and an ArF light source with 194 nm wavelength. Organic anti-reflective coatings including the same and a method for forming a photoresist pattern using the same are also disclosed. The disclosed cross-linking polymer is capable of preventing scattered reflection from a bottom film layer, eliminating standing wave effect due to alteration of thickness of the photoresist film, and increasing uniformity of the thickness of photoresist pattern. At the same time, the disclosed cross-linking pattern increases the etching velocity of the organic anti-reflective coating so that it can be easily removed.
摘要翻译：用于有机抗反射涂层的交联聚合物，其能够提高使用光刻工艺形成的超细光致抗蚀剂图案的均匀性和具有194nm波长的ArF光源。还公开了包括其的有机抗反射涂层和使用其的形成光致抗蚀剂图案的方法。所公开的交联聚合物能够防止底部膜层的散射反射，消除由于光致抗蚀剂膜的厚度变化引起的驻波效应，并增加光致抗蚀剂图案的厚度的均匀性。同时，所公开的交联图案增加了有机抗反射涂层的蚀刻速度，使得其可以容易地去除。

10. 发明授权

US06858371B2 Maleimide-photoresist monomers containing halogen, polymers thereof and photoresist compositions comprising the same 失效
标题翻译：含有卤素的马来酰亚胺 - 光致抗蚀剂单体，其聚合物和包含其的光致抗蚀剂组合物
公开(公告)号：US06858371B2
公开(公告)日：2005-02-22
申请号：US10080335
申请日：2002-02-21
申请人： Geun Su Lee , Jae Chang Jung , Min Ho Jung , Cha Won Koh , Ki Soo Shin
发明人： Geun Su Lee , Jae Chang Jung , Min Ho Jung , Cha Won Koh , Ki Soo Shin
IPC分类号： G03F7/033 , C08F210/04 , C08F220/10 , C08F222/40 , C08F232/08 , G03F7/004 , G03F7/039 , H01L21/027 , C08F26/06
CPC分类号： G03F7/0046 , G03F7/0395 , Y10S430/106 , Y10S430/108
摘要： Photoresist monomers, photoresist polymers prepared thereof, and photoresist compositions using the polymer are disclosed. More specifically, photoresist polymers comprising maleimide monomer represented by Formula 1, and a composition comprising the polymer thereof are disclosed. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and can be developed in an aqueous tetramethylammonium hydroxide (TMAH) solution. As the composition has low light absorbance at 193 nm and 157 nm wavelength, and it is suitable for a process using ultraviolet light source such as VUV (157 nm) wherein, X1, X2, R1, R2 and R3 are defined in the specification.
摘要翻译：公开了光致抗蚀剂单体，其制备的光致抗蚀剂聚合物和使用该聚合物的光致抗蚀剂组合物。更具体地，公开了包含由式1表示的马来酰亚胺单体的光致抗蚀剂聚合物和包含其聚合物的组合物。光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，并且可以在四甲基氢氧化铵（TMAH）水溶液中显影。由于组合物在193nm和157nm波长处具有低吸光度，并且适用于使用紫外光源如VUV（157nm）的方法，其中X1，X2，R1，R2和R3在本说明书中定义。

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