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1. 发明授权

US07838201B2 Method for manufacturing a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07838201B2
公开(公告)日：2010-11-23
申请号：US12420698
申请日：2009-04-08
申请人： Jae Chang Jung , Cheol Kyu Bok , Chang Moon Lim , Seung Chan Moon
发明人： Jae Chang Jung , Cheol Kyu Bok , Chang Moon Lim , Seung Chan Moon
IPC分类号： G03F7/30
CPC分类号： G03F7/0045 , C08F232/08 , G03F7/0046 , G03F7/0395 , G03F7/2041 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A polymer for immersion lithography comprising a repeating unit represented by Formula 1 and a photoresist composition containing the same. A photoresist film formed by the photoresist composition of the invention is highly resistant to dissolution, a photoacid generator in an aqueous solution for immersion lithography, thereby preventing contamination of an exposure lens and deformation of the photoresist pattern by exposure.
摘要翻译：一种用于浸没式光刻的聚合物，其包含由式1表示的重复单元和含有该重复单元的光致抗蚀剂组合物。由本发明的光致抗蚀剂组合物形成的光致抗蚀剂膜具有很高的耐溶解性，用于浸没式光刻的水溶液中的光致酸产生剂，从而防止曝光透镜的污染和曝光引起的光致抗蚀剂图案的变形。

2. 发明授权

US07494599B2 Method for fabricating fine pattern in semiconductor device 失效
标题翻译：在半导体器件中制造精细图案的方法
公开(公告)号：US07494599B2
公开(公告)日：2009-02-24
申请号：US11742288
申请日：2007-04-30
申请人： Sung-Kwon Lee , Seung-Chan Moon , Won-Kyu Kim
发明人： Sung-Kwon Lee , Seung-Chan Moon , Won-Kyu Kim
IPC分类号： B44C1/22
CPC分类号： H01L21/0332 , Y10T428/2826
摘要： A method for forming a fine pattern in a semiconductor device includes forming a first polymer layer over an etch target layer, the first polymer layer including a carbon-rich polymer layer, forming a second polymer layer over the first polymer layer, the second polymer layer including a silicon-rich polymer layer, patterning the second polymer layer, oxidizing surfaces of the patterned second polymer layer, etching the first polymer layer using the patterned second polymer layer comprising the oxidized surfaces, and etching the etch target layer using the patterned second polymer layer comprising the oxidized surfaces and the etched first polymer layer.
摘要翻译：在半导体器件中形成精细图案的方法包括在蚀刻目标层上形成第一聚合物层，第一聚合物层包括富碳聚合物层，在第一聚合物层上形成第二聚合物层，第二聚合物层包括富含硅的聚合物层，图案化第二聚合物层，氧化图案化的第二聚合物层的表面，使用包含氧化表面的图案化的第二聚合物层蚀刻第一聚合物层，以及使用图案化的第二聚合物层，其包含氧化表面和蚀刻的第一聚合物层。

3. 发明授权

US07462439B2 Top anti-reflective coating polymer, its preparation method and top anti-reflective coating composition comprising the same 失效
标题翻译：顶级抗反射涂料聚合物，其制备方法和包含其的顶部抗反射涂料组合物
公开(公告)号：US07462439B2
公开(公告)日：2008-12-09
申请号：US11159735
申请日：2005-06-23
申请人： Jae Chang Jung , Cheol Kyu Bok , Chang Moon Lim , Seung Chan Moon
发明人： Jae Chang Jung , Cheol Kyu Bok , Chang Moon Lim , Seung Chan Moon
IPC分类号： G03F7/32 , G03F7/095 , G03F7/11 , G03F7/039 , C08F22/18
CPC分类号： G03F7/091 , C09D5/32 , G03F7/0046 , G03F7/0048 , G03F7/0392 , Y10S438/952
摘要： Disclosed herein is a top anti-reflective coating polymer represented by Formula 1, below: wherein R1 and R2 are independently hydrogen, fluoro, methyl or fluoromethyl; R3 is a C1-10 hydrocarbon or a C1-10 hydrocarbon in which the hydrogen atoms are partly replaced by fluorine atoms; and a, b and c, representing the mole fraction of each monomer, are in the range between 0.05 and 0.9. Because a top anti-reflective coating formed using the anti-reflective coating polymer of Formula 1 is not soluble in water, it can be applied to immersion lithography using water as a medium for a light source. In addition, because the top anti-reflective coating can reduce the reflectance from an underlying layer, the uniformity of CD is improved, thus enabling the formation of an ultra fine pattern.
摘要翻译：本文公开了由下式1表示的顶部抗反射涂层聚合物：其中R1和R2独立地为氢，氟，甲基或氟甲基; R3是其中氢原子被氟原子部分取代的C1-10烃或C1-10烃; 和表示每个单体的摩尔分数的a，b和c在0.05和0.9之间的范围内。由于使用式1的抗反射涂层聚合物形成的顶部抗反射涂层不溶于水，因此可以使用水作为光源的介质进行浸渍光刻。此外，由于顶部抗反射涂层可以降低来自下层的反射率，因此提高了CD的均匀性，从而能够形成超细图案。

4. 发明授权

US07303858B2 Photoacid generating polymer, its preparation method, top anti-reflective coating composition comprising the same, method of forming a pattern in a semiconductor device, and semiconductor device 失效
标题翻译：光生酸聚合物及其制备方法，包含其的顶部抗反射涂料组合物，在半导体器件中形成图案的方法以及半导体器件
公开(公告)号：US07303858B2
公开(公告)日：2007-12-04
申请号：US11168102
申请日：2005-06-28
申请人： Jae Chang Jung , Cheol Kyu Bok , Chang Moon Lim , Seung Chan Moon
发明人： Jae Chang Jung , Cheol Kyu Bok , Chang Moon Lim , Seung Chan Moon
IPC分类号： G03F7/095 , G03F7/11 , G03F7/38 , G03F7/30 , G03F7/20
CPC分类号： G03F7/0045 , C08F220/06 , C08F220/18 , C08F222/06 , C08F232/08 , G03F7/0046 , G03F7/091 , Y10S430/105 , Y10S430/151 , Y10S430/162 , Y10S522/904
摘要： Disclosed herein is a photoacid generating polymer represented by Formula 1 below: wherein R1 is a C1-10 hydrocarbon or a C1-10 hydrocarbon in which the hydrogen atoms are wholly or partly replaced by fluorine atoms; R2 is hydrogen or a methyl group; and a, b, c and d represent the mole fraction of each monomer and are in the range between about 0.05 and about 0.9, such that the sum of a, b, c, and d equals one. Since the photoacid generating polymer of Formula 1 is not water-soluble and acts as a photoacid generator, it can be used to prepare a top anti-reflective coating composition for immersion lithography.
摘要翻译：本文公开了由下式1表示的光酸产生聚合物：

5. 发明申请

US20050014089A1 Organic anti-reflective coating polymer, its preparation method and organic anti-reflective coating composition comprising the same 失效
标题翻译：有机抗反射涂料聚合物，其制备方法和包含其的有机抗反射涂料组合物
公开(公告)号：US20050014089A1
公开(公告)日：2005-01-20
申请号：US10811558
申请日：2004-03-29
申请人： Geun-soo Lee , Cheol-kyu Bok , Seung-chan Moon , Ki-soo Shin , Won-wook Lee
发明人： Geun-soo Lee , Cheol-kyu Bok , Seung-chan Moon , Ki-soo Shin , Won-wook Lee
IPC分类号： G03F7/11 , C08F130/02 , C08L29/04 , C09D5/33 , C09D143/02 , G03C1/76 , G03F7/09 , H01L21/027
CPC分类号： G03F7/091
摘要： Disclosed are an organic anti-reflective coating polymer having a structure represented by the following formula I, its preparation method and an organic anti-reflective coating composition with respect to an ultra-fine pattern formation process of the photoresist for photolithography technique using ArF light source with a wavelength of 193 nm or VUV light source with a wavelength of 157 nm. An organic anti-reflective coating polymer capable of protecting a photoresist from amines in the atmosphere to minimize the post exposure delay effect after exposure to light and, at the same time, enhances notching status, such as, a pattern distortion caused by diffused reflection, and reducing reflection rate to minimize the swing effect. wherein m is an integer ranging from 5 to 5000.
摘要翻译：本发明公开了一种有机抗反射涂层聚合物，其具有由下式I表示的结构，其制备方法和有机抗反射涂层组合物相对于使用ArF光源的光刻技术的光致抗蚀剂的超细图案形成方法波长为193nm，波长157nm的VUV光源。能够在大气中保护光致抗蚀剂免受胺的影响的有机抗反射涂层聚合物，以使曝光后的曝光后延迟效果最小化，同时增加凹陷状态，例如由扩散反射引起的图案变形，并减少反射率以最小化摆动效果。其中m为5至5000的整数。

6. 发明授权

US5650250A Light exposure mask for semiconductor devices 失效
标题翻译：半导体器件的曝光掩模
公开(公告)号：US5650250A
公开(公告)日：1997-07-22
申请号：US569508
申请日：1995-12-08
申请人： Seung Chan Moon
发明人： Seung Chan Moon
IPC分类号： G03F1/00 , G03F7/20 , G03F9/00
CPC分类号： G03F7/70125 , G03F7/70433
摘要： A light exposure mask for a semiconductor device having different line/space pattern widths at different mask portions in such a manner that its repeated patterns disposed at the central mask portion corresponding to the memory region of the semiconductor device have a minimum line/space width whereas those disposed at the peripheral mask portion have a line/space width larger than the minimum width, such that its non-uniform patterns disposed at the peripheral mask portion have a space width larger than the minimum width, and such that its independent pattern has a line width larger than the minimum width. With such line/space pattern widths, the light exposure mask is capable of preventing a short circuit caused by the residue of a photoresist film material after a light exposure according to the modified illumination method or caused by an excessive light exposure, forming a precise micro pattern, increasing the process redundancy, and thereby achieving an improvement in process yield and operation reliance.
摘要翻译：一种用于半导体器件的曝光掩模，其在不同掩模部分处具有不同的线/空间图案宽度，使得其布置在对应于半导体器件的存储区域的中心掩模部分处的重复图案具有最小线/空间宽度，设置在周边掩模部分的那些具有大于最小宽度的线/空间宽度，使得其设置在周边掩模部分处的不均匀图案具有大于最小宽度的空间宽度，并且使得其独立图案具有线宽大于最小宽度。利用这种线/空间图案宽度，曝光掩模能够根据改进的照明方法防止光曝光后的光致抗蚀剂材料的残留导致的短路或者由于过度的曝光引起的短路，形成精确的微观模式，增加过程冗余度，从而实现过程产量和操作依赖性的提高。

7. 发明授权

US07442648B2 Method for fabricating semiconductor device using tungsten as sacrificial hard mask 有权
标题翻译：使用钨作为牺牲硬掩模制造半导体器件的方法
公开(公告)号：US07442648B2
公开(公告)日：2008-10-28
申请号：US11149325
申请日：2005-06-10
申请人： Kwang-Ok Kim , Yun-Seok Cho , Seung-Chan Moon , Jin-Ki Jung , Sung-Kwon Lee , Jun-Hyeub Sun , Dong-Duk Lee , Jin-Woong Kim , Gyu-Han Yoon
发明人： Kwang-Ok Kim , Yun-Seok Cho , Seung-Chan Moon , Jin-Ki Jung , Sung-Kwon Lee , Jun-Hyeub Sun , Dong-Duk Lee , Jin-Woong Kim , Gyu-Han Yoon
IPC分类号： H01L21/302
CPC分类号： H01L21/76802 , H01L21/0332 , H01L21/28123 , H01L21/31116 , H01L21/31144 , H01L21/32136 , H01L21/32137 , H01L21/32139 , H01L27/10894
摘要： The present invention relates to a method for fabricating a semiconductor device using tungsten as a sacrificial hard mask material. The method includes the steps of: forming a layer on an etch target layer; forming a photoresist pattern on the layer; etching the layer by using the photoresist pattern as an etch mask along with use of a plasma containing CHF3 gas to form a sacrificial hard mask; and etching the etch target layer by using at least the sacrificial hard mask as an etch mask, thereby obtaining a predetermined pattern.
摘要翻译：本发明涉及使用钨作为牺牲硬掩模材料制造半导体器件的方法。该方法包括以下步骤：在蚀刻目标层上形成层; 在该层上形成光致抗蚀剂图案; 通过使用光致抗蚀剂图案作为蚀刻掩模以及使用含有CHF 3 N 3气体的等离子体来蚀刻该层以形成牺牲性硬掩模; 并且通过使用至少牺牲硬掩模作为蚀刻掩模来蚀刻蚀刻目标层，由此获得预定图案。

8. 发明授权

US07205089B2 Cross-linking polymer for organic anti-reflective coating, organic anti-reflective coating composition comprising the same and method for forming photoresist pattern using the same 失效
标题翻译：用于有机抗反射涂层的交联聚合物，包含其的有机抗反射涂料组合物和使用其形成光刻胶图案的方法
公开(公告)号：US07205089B2
公开(公告)日：2007-04-17
申请号：US10989221
申请日：2004-11-15
申请人： Jae-chang Jung , Cheol-Kyu Bok , Seung Chan Moon , Ki-Soo Shin
发明人： Jae-chang Jung , Cheol-Kyu Bok , Seung Chan Moon , Ki-Soo Shin
IPC分类号： G03C1/835 , G03F7/20 , G03F7/30 , G03F7/38 , C08F16/34
CPC分类号： G03F7/091 , C08F8/00 , C08F216/34 , C08F2810/20 , C08F116/34
摘要： A cross-linking polymer for an organic anti-reflective coating that is able to improve the uniformity of an ultra-fine photoresist pattern formed using a photolithography process and an ArF light source with 194 nm wavelength. Organic anti-reflective coatings including the same and a method for forming a photoresist pattern using the same are also disclosed. The disclosed cross-linking polymer is capable of preventing scattered reflection from a bottom film layer, eliminating standing wave effect due to alteration of thickness of the photoresist film, and increasing uniformity of the thickness of photoresist pattern. At the same time, the disclosed cross-linking pattern increases the etching velocity of the organic anti-reflective coating so that it can be easily removed.
摘要翻译：用于有机抗反射涂层的交联聚合物，其能够提高使用光刻工艺形成的超细光致抗蚀剂图案的均匀性和具有194nm波长的ArF光源。还公开了包括其的有机抗反射涂层和使用其的形成光致抗蚀剂图案的方法。所公开的交联聚合物能够防止底部膜层的散射反射，消除由于光致抗蚀剂膜的厚度变化引起的驻波效应，并增加光致抗蚀剂图案的厚度的均匀性。同时，所公开的交联图案增加了有机抗反射涂层的蚀刻速度，使得其可以容易地去除。

9. 发明授权

US07022458B2 Photoresist polymer and photoresist composition containing the same 有权
标题翻译：光致抗蚀剂聚合物和含有它的光致抗蚀剂组合物
公开(公告)号：US07022458B2
公开(公告)日：2006-04-04
申请号：US10719905
申请日：2003-11-21
申请人： Geun Su Lee , Cheol Kyu Bok , Seung Chan Moon , Ki Soo Shin , Jae Hyun Kim , Jung Woo Kim , Sang Hyang Lee , Jae Hyun Kang
发明人： Geun Su Lee , Cheol Kyu Bok , Seung Chan Moon , Ki Soo Shin , Jae Hyun Kim , Jung Woo Kim , Sang Hyang Lee , Jae Hyun Kang
IPC分类号： G03F7/004 , C08F10/00
CPC分类号： G03F7/0046 , G03F7/0045 , G03F7/0395 , G03F7/0397 , Y10S430/108
摘要： Photoresist polymers and photoresist compositions are disclosed. A photoresist polymer represented by Formula 1 and a photoresist composition containing the same have excellent etching resistance, thermal resistance and adhesive property, and high affinity to an developing solution, thereby improving LER (line edge roughness). wherein X1, X2, X3, R1, R2, R3, R4, R5, m, n, o, a, b, c, d and e are as defined in the description.
摘要翻译：公开了光致抗蚀剂聚合物和光致抗蚀剂组合物。由式1表示的光致抗蚀剂聚合物和含有它的光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，并且对显影液具有高亲和性，从而提高LER（线边缘粗糙度）。其中X 1，X 2，X 3，R 1，R 2， R 3，R 4，R 5，m，n，o，a，b，c，d和e定义如说明。

10. 发明授权

US07615338B2 Photoresist coating composition and method for forming fine pattern using the same 有权
标题翻译：光刻胶涂料组合物和使用其形成精细图案的方法
公开(公告)号：US07615338B2
公开(公告)日：2009-11-10
申请号：US11298385
申请日：2005-12-08
申请人： Geun Su Lee , Seung Chan Moon , Seung Hun Lee
发明人： Geun Su Lee , Seung Chan Moon , Seung Hun Lee
IPC分类号： G03C1/73 , G03F7/26 , G03F7/36
CPC分类号： G03F7/40
摘要： A photoresist coating composition that includes a compound represented by Formula 1 and an aqueous solvent, and a method for forming a fine pattern by coating the composition on a photoresist pattern to effectively reduce a size of a photoresist contact hole and a space, which can be applied to all semiconductor processes.
摘要翻译：包括由式1表示的化合物和水性溶剂的光致抗蚀剂涂料组合物，以及通过在光致抗蚀剂图案上涂覆该组合物以有效地减小光致抗蚀剂接触孔的尺寸和空间来形成精细图案的方法，其可以是适用于所有半导体工艺。

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