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    • 1. 发明授权
    • Organic anti-reflective coating composition and method for forming photoresist patterns using the same
    • 有机抗反射涂料组合物及其形成方法
    • US06835532B2
    • 2004-12-28
    • US10357876
    • 2003-02-04
    • Jae-chang Jung
    • Jae-chang Jung
    • G03C1492
    • G03F7/091Y10S430/106
    • An organic anti-reflective coating composition and a method for forming photoresist patterns using the same are disclosed which can prevent reflection of the lower film layer or substrate and reduce standing waves caused by light and variation of in the thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, with respect to a microfine pattern-forming process using photoresists for a photolithography by using ArF with 193 nm wavelength among processes for manufacturing semiconductor device. More particularly, an organic anti-reflective coating composition and a method for forming photoresist patterns using the same are disclosed which can obtain perpendicular photoresist patterns and thus inhibit breakdown and/or collapse of the patterns by comprising an acid-diffusion inhibitor.
    • 公开了一种有机抗反射涂层组合物和使用其形成光致抗蚀剂图案的方法,其可以防止下膜层或基板的反射,并减少由光引起的驻波和光致抗蚀剂本身的厚度的变化, 相对于使用光致抗蚀剂进行光刻的微细图案形成方法,通过在制造半导体器件的工艺中使用193nm波长的ArF,增加光致抗蚀剂图案的均匀性。 更具体地,公开了一种有机抗反射涂料组合物和使用其形成光致抗蚀剂图案的方法,其可以获得垂直的光致抗蚀剂图案,从而通过包含酸扩散抑制剂来抑制图案的破坏和/或塌陷。
    • 2. 发明授权
    • Negative-acting chemically amplified photoresist composition
    • 负性化学放大光致抗蚀剂组合物
    • US06576394B1
    • 2003-06-10
    • US09596098
    • 2000-06-16
    • Pingyong XuPing-Hung LuRalph R. Dammel
    • Pingyong XuPing-Hung LuRalph R. Dammel
    • G03C1492
    • G03F7/038G03F7/0045Y10S430/106Y10S430/122
    • A chemically-amplified, negative-acting, radiation-sensitive photoresist composition that is developable in an alkaline medium, the photoresist comprising: a) a phenolic film-forming polymeric binder resin having ring bonded hydroxyl groups; b) a photoacid generator that forms an acid upon exposure to radiation, in an amount sufficient to initiate crosslinking of the film-forming binder resin; c) a crosslinking agent that forms a carbonium ion upon exposure to the acid from step b) generated by exposure to radiation, and which comprises an etherified aminoplast polymer or oligomer; d) a second crosslinking agent that forms a carbonium ion upon exposure to the acid from step b) generated by exposure to radiation, and which comprises either 1) a hydroxy substituted- or 2) a hydroxy C1-C4 alkyl substituted-C1-C12 alkyl phenol, wherein the total amount of the crosslinking agents from steps c) and d) is an effective crosslinking amount; and e) a photoresist solvent, and a process for producing a microelectronic device utilizing such a photoresist composition.
    • 一种可在碱性介质中显影的化学放大的,负性的,辐射敏感的光致抗蚀剂组合物,光致抗蚀剂包括:a)具有环键羟基的酚醛膜形成聚合物粘合剂树脂; b)形成 暴露于辐射后的酸,其量足以引发成膜粘合剂树脂的交联; c)在暴露于通过暴露于辐射产生的步骤b)的酸暴露于酸后形成碳鎓离子的交联剂,其包含 醚化的氨基塑料聚合物或低聚物; d)第二交联剂,其暴露于通过暴露于辐射产生的步骤b)的酸形成碳鎓离子,并且其包括1)羟基取代的或2)羟基C 1 -C 4 烷基取代的C 1 -C 12烷基苯酚,其中来自步骤c)和d)的交联剂的总量是有效的交联量; ande)光致抗蚀剂溶剂,以及利用这种光致抗蚀剂组合物制造微电子器件的方法。
    • 5. 发明授权
    • Chemically amplified resist composition
    • 化学放大抗蚀剂组合物
    • US06280903B1
    • 2001-08-28
    • US09618142
    • 2000-07-17
    • Yool KangSang-Jun ChoiDong-Won JungChun-Geun ParkYoung-Bum Koh
    • Yool KangSang-Jun ChoiDong-Won JungChun-Geun ParkYoung-Bum Koh
    • G03C1492
    • G03F7/039G03F7/0045
    • Copolymers and terpolymers are used in chemically amplified resists. The terpolymers are of the formula: wherein R3 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein said aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof. R4 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein said aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R5 is selected from the group consisting of hydrogen and methyl; R6 is selected from the group consisting of t-butyl and tetrahydropyranyl; M and n are each integers; and wherein n/(m+n) ranges from about 0.1 to about 0.5.
    • 共聚物和三元共聚物用于化学增强抗蚀剂。 三元共聚物具有下式:其中R 3选自氢和C 1至C 10脂族烃,其中所述脂族烃包含选自氢,羟基,羧酸,羧酸酐及其组合的取代基 。 R 4选自氢和C 1至C 10脂族烃,其中所述脂族烃包含选自氢,羟基,羧酸,羧酸酐及其组合的取代基; R5选自氢和甲基; R6选自叔丁基和四氢吡喃基; M和n分别是整数; 并且其中n /(m + n)为约0.1至约0.5。
    • 8. 发明授权
    • Unsaturated oxime derivatives and the use thereof as latent acids
    • 不饱和肟衍生物及其作为潜伏酸的用途
    • US06703182B1
    • 2004-03-09
    • US09763016
    • 2001-02-15
    • Jean-Luc BirbaumToshikage AsakuraHitoshi Yamato
    • Jean-Luc BirbaumToshikage AsakuraHitoshi Yamato
    • G03C1492
    • C09D11/38B33Y70/00C07C309/66C07C309/73C07C381/00C09D11/03C09D11/101G03F7/0045Y10S430/12Y10S430/122
    • Compounds of formulae I, II or III wherein m is zero or 1; n is 1, 2 or 3; R1 inter alia is unsubstituted or substituted phenyl, or naphthyl, anthracyl, phenanthryl, a heteroaryl radical, or C2-C12alkenyl; R′1 inter alia is vinylene, phenylene, naphthylene, diphenylene or oxydiphenylene; R2 inter alia is CN, C1-C4haloalkyl, C2-C6alkoxycarbonyl, phenoxycarbonyl, or benzoyl; R3 inter alia is C1-C18alkylsulfonyl, phenyl-C1-C3alkylsulfonyl, camphorylsulfonyl, or phenylsulfonyl; R′3 inter alia is C2-C12alkylenedisulfonyl, phenylenedisulfonyl, naphthylenedisulfonyl, diphenylenedisulfonyl, or oxydiphenylenedisulfonyl; R4 and R5 inter alia are hydrogen, halogen, C1-C8alkyl, C1-C6alkoxy, C1-C4haloalkyl, CN, NO2, C2-C6alkanoyl, benzoyl, phenyl, —S-phenyl, OR6, SR9, NR7R8, C2-C6alkoxycarbonyl or phenoxycarbonyl; R6 inter alia is hydrogen, phenyl or C1-C12alkyl; R7 and R8 inter alia are hydrogen or C1-C12alkyl; R9 inter alia is C1-C12 alkyl; R10, R11 and R12 inter alia are C1-C6alkyl or phenyl; upon irradiation react as acid generating compounds and thus are suitable in photoresist applications.
    • 其中m为式I,II或III的化合物为0或1; n为1,2或3; R 1特别是未取代或取代的苯基,或萘基,蒽基,菲基,杂芳基或C 2 -C 12烯基; 尤其是亚乙烯基,亚苯基,亚萘基,二亚苯基或氧联二苯基; R2特别是CN,C 1 -C 4卤代烷基,C 2 -C 6烷氧基羰基,苯氧基羰基或苯甲酰基; R3特别是C 1 -C 18烷基磺酰基,苯基-C 1 -C 3烷基磺酰基,樟脑磺酰基或苯基磺酰基; R'3特别是C 2 -C 12亚烷基二磺酰基,亚苯基二磺酰基,萘基二磺酰基,二苯基二磺酰基或氧基二苯基二磺酰基; R4和R5特别是氢,卤素,C1-C8烷基,C1-C6烷氧基,C1-C4卤代烷基,CN,NO2,C2-C6烷酰基,苯甲酰基,苯基,-S-苯基,OR6,SR9,NR7R8,C2-C6烷氧基羰基或苯氧基羰基 ; R6尤其是氢,苯基或C 1 -C 12烷基; R 7和R 8尤其是氢或C 1 -C 12烷基; R9尤其是C1-C12烷基; R 10,R 11和R 12特别是C 1 -C 6烷基或苯基; 在照射时作为产生酸的化合物反应,因此适用于光刻胶应用。