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1. 发明申请

US20160180874A1 HARD MAGNETIC ALLOY THIN FILM USED IN HIGH DENSITY PERPENDICULAR MAGNETIC RECORDING MEDIUM 审中-公开
标题翻译：硬密度磁记录介质使用的硬磁合金薄膜
公开(公告)号：US20160180874A1
公开(公告)日：2016-06-23
申请号：US14578665
申请日：2014-12-22
申请人： Ming Chi University of Technology
发明人： Sheng-Chi CHEN , Ta-Huang SUN
IPC分类号： G11B5/64 , G11B5/851 , H01F1/047
CPC分类号： G11B5/851 , G11B5/653 , H01F10/123 , H01F41/18
摘要： This invention discloses a hard magnetic alloy thin film used in a high density perpendicular magnetic recording medium. This film incorporates a glass substrate and a ferromagnetic layer formed on the glass substrate. The ferromagnetic layer is deposited onto the substrate using a sputtering deposition and an annealing. After annealing, a single-layered ferromagnetic film with high perpendicular magnetic anisotropy is achieved.
摘要翻译：本发明公开了一种用于高密度垂直磁记录介质的硬磁合金薄膜。该膜包括形成在玻璃基板上的玻璃基板和铁磁层。使用溅射沉积和退火将铁磁层沉积到衬底上。退火后，实现了具有高垂直磁各向异性的单层铁磁膜。

2. 发明授权

US09142226B2 Thin film with tuned grain size 有权
标题翻译：调整晶粒尺寸的薄膜
公开(公告)号：US09142226B2
公开(公告)日：2015-09-22
申请号：US13539026
申请日：2012-06-29
申请人： Venkateswara Rao Inturi , Wei Tian , Huaqing Yin , Michael C. Kautzky , Mark Thomas Kief , Meng Zhu , Eliot Lewis Cuthbert Estrine
发明人： Venkateswara Rao Inturi , Wei Tian , Huaqing Yin , Michael C. Kautzky , Mark Thomas Kief , Meng Zhu , Eliot Lewis Cuthbert Estrine
IPC分类号： G11B5/127 , H01L43/12 , G11B5/31 , H01F10/16 , H01F41/18
CPC分类号： G11B5/1278 , G11B5/3103 , G11B5/3163 , H01F10/16 , H01F41/18
摘要： An apparatus and associated method provides a magnetic writing element that may have at least a write pole tuned to a predetermined first grain size with a cryogenic substrate temperature. A magnetic shield can be formed with a predetermined second grain size that is tuned with the cryogenic substrate temperature.
摘要翻译：一种装置和相关方法提供一种磁性写入元件，该磁性写入元件至少可以用低温衬底温度调整到预定的第一晶粒尺寸的写入极。磁屏蔽可以以与低温衬底温度调节的预定的第二粒度形成。

3. 发明授权

US08968538B2 Sputtering device and sputtering method 有权
标题翻译：溅射装置和溅射法
公开(公告)号：US08968538B2
公开(公告)日：2015-03-03
申请号：US13121338
申请日：2009-09-29
申请人： Toru Kitada , Naoki Watanabe , Motonobu Nagai , Masahiro Suenaga , Takeo Konno
发明人： Toru Kitada , Naoki Watanabe , Motonobu Nagai , Masahiro Suenaga , Takeo Konno
IPC分类号： C23C14/00 , C25B9/00 , C25B11/00 , C25B13/00 , C23C14/54 , C23C14/34 , H01J37/32 , H01J37/34 , H01F41/18
CPC分类号： C23C14/542 , C23C14/3464 , H01F41/18 , H01J37/3266 , H01J37/32733 , H01J37/3405 , H01J37/3408 , H01J37/3414
摘要： A magnetic film having excellent uniformity in in-plane distribution of film thickness or sheet resistance is formed when the film is formed by forming a magnetic field on a processing surface of a substrate (21) and performing oblique incidence sputtering by using high discharge power.A sputtering apparatus (1) is provided with a substrate holder (22) for holding rotatably the substrate (21) in the surface direction of the processing surface of the substrate; a substrate magnetic field forming device (30) which is disposed to surround the substrate (21) and forms a magnetic field on the processing surface of the substrate (21); cathodes (41) which are arranged diagonally above the substrate (21) and are supplied with electric discharge power; a position detecting device (23) for detecting a rotation position of the substrate (21); and a control device (50) which adjusts the rotation speed of the substrate (21) in accordance with the rotation position detected by the position detecting device (23).
摘要翻译：当通过在基板（21）的处理表面上形成磁场并且通过使用高放电电力进行倾斜入射溅射形成膜时，形成膜厚度或薄层电阻的面内分布均匀性优异的磁性膜。溅射装置（1）设置有用于在基板的处理表面的表面方向上可旋转地保持基板（21）的基板保持器（22）衬底磁场形成装置（30），被设置为围绕所述衬底（21）并在所述衬底（21）的所述处理表面上形成磁场; 在基板（21）上方对角配置并供给放电电力的阴极（41）位置检测装置，用于检测所述基板的旋转位置; 以及根据由位置检测装置（23）检测到的旋转位置来调整基板（21）的转速的控制装置（50）。

4. 发明授权

US08934290B2 Magnetoresistance effect device and method of production of the same 有权
标题翻译：磁阻效应器及其制作方法相同
公开(公告)号：US08934290B2
公开(公告)日：2015-01-13
申请号：US14032815
申请日：2013-09-20
申请人： Canon Anelva Corporation , National Institute of Advanced Industrial Science and Technology
发明人： David D. Djayaprawira , Koji Tsunekawa , Motonobu Nagai , Hiroki Maehara , Shinji Yamagata , Naoki Watanabe , Shinji Yuasa
IPC分类号： G11C11/00 , H01L43/12 , B82Y25/00 , B82Y40/00 , C23C14/08 , C23C14/34 , G11C11/16 , H01F10/32 , H01F41/30 , H01L43/08 , H01F41/18
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , C23C14/081 , C23C14/34 , G11C11/16 , G11C11/161 , H01F10/3204 , H01F10/3254 , H01F41/18 , H01F41/307 , H01L43/08
摘要： A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.
摘要翻译：一种磁电阻效应器件，包括具有一对铁磁层和位于它们之间的阻挡层的多层结构，其中至少一个铁磁层至少具有与阻挡层接触的部分为非晶形，阻挡层是具有高度磁化强度的MgO层定向纹理结构。

5. 发明申请

US20140132376A1 NANOSTRUCTURED HIGH-STRENGTH PERMANENT MAGNETS 审中-公开
标题翻译：纳米结构的高强度永磁体
公开(公告)号：US20140132376A1
公开(公告)日：2014-05-15
申请号：US14118206
申请日：2012-05-18
申请人： Sungho Jin
发明人： Sungho Jin
IPC分类号： H01F1/01 , H01F41/02
CPC分类号： H01F1/01 , B22F2998/10 , C22C19/03 , C22C19/07 , C22C22/00 , C22C38/002 , C22C38/10 , C22C2202/02 , H01F1/0552 , H01F1/0573 , H01F1/0579 , H01F1/061 , H01F1/068 , H01F1/112 , H01F41/0266 , H01F41/18 , B22F9/04 , B22F1/02 , B22F3/02 , B22F3/10
摘要： Materials, techniques, systems, and devices are disclosed for fabricating and implementing high-strength permanent magnets. In one aspect, a method of fabricating a magnet includes distributing particles of a first magnetic material such that the particles are substantially separated, in which the particles include a surface substantially free of oxygen. The method includes forming a coating of a second magnetic material over each of the particles, in which the coating forms an interface at the surface that facilitates magnetic exchange coupling between the first and second magnetic materials. The method includes consolidating the coated particles to produce a magnet that is magnetically stronger than each of the first and second magnetic materials.
摘要翻译：公开了用于制造和实施高强度永磁体的材料，技术，系统和装置。在一个方面，一种制造磁体的方法包括分配第一磁性材料的颗粒，使得颗粒基本上分离，其中颗粒包括基本上不含氧的表面。该方法包括在每个颗粒上形成第二磁性材料的涂层，其中涂层在表面上形成促进第一和第二磁性材料之间的磁交换耦合的界面。该方法包括固化涂覆的颗粒以产生比第一和第二磁性材料中的每种磁性更强的磁体。

6. 发明授权

US08685549B2 Nanocomposites for ultra high density information storage, devices including the same, and methods of making the same 有权
标题翻译：用于超高密度信息存储的纳米复合材料，包括其的器件及其制造方法
公开(公告)号：US08685549B2
公开(公告)日：2014-04-01
申请号：US12956598
申请日：2010-11-30
申请人： Amit Goyal , Junsoo Shin
发明人： Amit Goyal , Junsoo Shin
IPC分类号： C30B23/02 , B32B9/00 , G11B5/127 , G11B5/706
CPC分类号： C30B23/02 , H01F1/0063 , H01F1/0081 , H01F41/18 , H01F41/20 , Y10T428/25 , Y10T428/292 , Y10T428/2958
摘要： A nanocomposite article that includes a single-crystal or single-crystal-like substrate and heteroepitaxial, phase-separated layer supported by a surface of the substrate and a method of making the same are described. The heteroepitaxial layer can include a continuous, non-magnetic, crystalline, matrix phase, and an ordered, magnetic magnetic phase disposed within the matrix phase. The ordered magnetic phase can include a plurality of self-assembled crystalline nanostructures of a magnetic material. The phase-separated layer and the single crystal substrate can be separated by a buffer layer. An electronic storage device that includes a read-write head and a nanocomposite article with a data storage density of 0.75 Tb/in2 is also described.
摘要翻译：描述了包括单晶或单晶样衬底和由衬底表面支撑的异质外延，相分离层的纳米复合材料及其制备方法。异质外延层可以包括连续的，非磁性的，结晶的基质相，以及设置在基体相内的有序的磁性磁相。有序磁性相可以包括磁性材料的多个自组装结晶纳米结构。相分离层和单晶基板可以通过缓冲层分离。还描述了一种包括读写头和数据存储密度为0.75Tb / in2的纳米复合制品的电子存储装置。

7. 发明授权

US08673463B2 Method to synthesize ordered magnetic alloys at low temperature 有权
标题翻译：在低温下合成有序磁性合金的方法
公开(公告)号：US08673463B2
公开(公告)日：2014-03-18
申请号：US12202504
申请日：2008-09-02
申请人： Samuel Dacke Harkness, IV
发明人： Samuel Dacke Harkness, IV
IPC分类号： G11B5/66
CPC分类号： C23C14/34 , C23C14/024 , G11B5/64 , G11B5/656 , G11B5/851 , H01F41/18
摘要： The present invention relates to a method of synthesizing an ordered magnetic alloy comprising obtaining a substrate and performing sequential sputter deposition of multiple atomic monolayers of the magnetic alloy.
摘要翻译：本发明涉及一种合成有序磁性合金的方法，包括获得基底并执行磁性合金的多个原子单层的顺序溅射沉积。

8. 发明申请

US20140004387A1 THIN FILM WITH TUNED GRAIN SIZE 有权
标题翻译：薄膜与调整谷物尺寸
公开(公告)号：US20140004387A1
公开(公告)日：2014-01-02
申请号：US13539026
申请日：2012-06-29
申请人： Venkateswara Rao Inturi , Wei Tian , Huaqing Yin , Michael C. Kautzky , Mark Thomas Kief , Meng Zhu , Eliot Lewis Cuthbert Estrine
发明人： Venkateswara Rao Inturi , Wei Tian , Huaqing Yin , Michael C. Kautzky , Mark Thomas Kief , Meng Zhu , Eliot Lewis Cuthbert Estrine
IPC分类号： G11B5/65 , B05D5/12
CPC分类号： G11B5/1278 , G11B5/3103 , G11B5/3163 , H01F10/16 , H01F41/18
摘要： An apparatus and associated method provides a magnetic writing element that may have at least a write pole tuned to a predetermined first grain size with a cryogenic substrate temperature. A magnetic shield can be formed with a predetermined second grain size that is tuned with the cryogenic substrate temperature.
摘要翻译：一种装置和相关方法提供一种磁性写入元件，该磁性写入元件至少可以用低温衬底温度调整到预定的第一晶粒尺寸的写入极。磁屏蔽可以以与低温衬底温度调节的预定的第二粒度形成。

9. 发明授权

US08603650B2 Perpendicular magnetic recording disk and manufacturing method thereof 有权
标题翻译：垂直磁记录盘及其制造方法
公开(公告)号：US08603650B2
公开(公告)日：2013-12-10
申请号：US10576755
申请日：2005-06-29
申请人： Yoshiaki Sonobe , Teiichiro Umezawa , Chikara Takasu
发明人： Yoshiaki Sonobe , Teiichiro Umezawa , Chikara Takasu
IPC分类号： G11B5/673
CPC分类号： H01F10/007 , B82Y25/00 , G11B5/66 , G11B5/851 , G11B2005/0029 , H01F10/16 , H01F41/18
摘要： A magnetic disk 10 for use in perpendicular magnetic recording has at least a magnetic recording layer on a substrate 1. The magnetic recording layer is composed of a ferromagnetic layer 5 of a granular structure containing silicon (Si) or an oxide of silicon (Si) between crystal grains containing cobalt (Co), a stacked layer 7 having a first layer containing cobalt (Co) or a Co alloy and a second layer containing palladium (Pd) or platinum (Pt), and a spacer layer 6 interposed between the ferromagnetic layer 5 and the stacked layer 7. After forming the ferromagnetic layer 5 on the substrate 1 by sputtering in an argon gas atmosphere, the stacked layer 7 is formed by sputtering in the argon gas atmosphere at a gas pressure lower than that used when forming the ferromagnetic layer 5.
摘要翻译：用于垂直磁记录的磁盘10在基板1上至少具有磁记录层。磁记录层由含有硅（Si）或硅（Si）的氧化物的粒状结构的铁磁层5构成，在含有钴（Co）的晶粒之间，具有包含钴（Co）或Co合金的第一层的堆叠层7和包含钯（Pd）或铂（Pt）的第二层的间隔层6和介于铁磁性层5和堆叠层7.在氩气气氛中通过溅射在基板1上形成铁磁层5之后，层叠层7通过在氩气气氛中以比形成铁磁层5。

10. 发明授权

US08284526B2 Tunneling junction magnetoresistive effect element and manufacturing method thereof 有权
标题翻译：隧道结磁阻效应元件及其制造方法
公开(公告)号：US08284526B2
公开(公告)日：2012-10-09
申请号：US12955746
申请日：2010-11-29
申请人： Koichi Nishioka , Koji Sakamoto , Tatsumi Hirano
发明人： Koichi Nishioka , Koji Sakamoto , Tatsumi Hirano
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3906 , H01F10/3254 , H01F10/3272 , H01F41/18 , H01F41/307 , H01L43/08 , H01L43/12 , Y10T428/1114
摘要： According to one embodiment, a TMR effect element includes a ground layer, an antiferromagnetic layer above the ground layer, a first ferromagnetic layer above the antiferromagnetic layer and exchange-coupled to the antiferromagnetic layer, an anti-parallel coupling layer above the first ferromagnetic layer, a second ferromagnetic layer having a magnetic moment coupled anti-parallel to the magnetic moment of the first ferromagnetic layer via the anti-parallel coupling layer, an insulation barrier layer above the second ferromagnetic layer, and a third ferromagnetic layer above the insulation barrier layer. At least a portion of the second ferromagnetic layer and at least a portion of the third ferromagnetic layer on an insulation barrier layer side are comprised of a crystal, and the insulation barrier layer comprises MgO and an oxide material having an independent cubic crystal structure and complete solid solubility with MgO. Other elements, heads, and formation methods are described according to various embodiments.
摘要翻译：根据一个实施例，TMR效应元件包括接地层，接地层上方的反铁磁层，反铁磁层上方的第一铁磁层并与反铁磁层交换耦合，第一铁磁层上方的反平行耦合层具有经由所述反平行耦合层反平行于所述第一铁磁层的磁矩而耦合的磁矩的第二铁磁层，所述第二铁磁层上方的绝缘阻挡层和所述绝缘阻挡层上方的第三铁磁层。第二铁磁层的至少一部分和绝缘阻挡层侧上的第三铁磁层的至少一部分由晶体构成，绝缘阻挡层包括MgO和具有独立立方晶体结构的氧化物材料与MgO的固溶度。根据各种实施例描述其它元件，头和形成方法。

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