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1. 发明授权

US07855860B2 Magnetoresistance element magnetic random access memory, magnetic head and magnetic storage device 有权
标题翻译：磁阻元件磁性随机存取存储器，磁头和磁存储器件
公开(公告)号：US07855860B2
公开(公告)日：2010-12-21
申请号：US11632387
申请日：2005-06-30
申请人： Nobuyuki Ishiwata
发明人： Nobuyuki Ishiwata
IPC分类号： G11B5/39 , G11C11/02
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/3929 , G11B2005/3996 , G11C11/16 , H01F10/13 , H01F10/3204 , H01F10/3254 , H01F41/302 , H01L27/228 , H01L43/10
摘要： A magnetoresistance element includes an antiferromagnetic layer, a fixed ferromagnetic layer, a first nonmagnetic layer and a free ferromagnetic layer. The antiferromagnetic layer is formed on the upper surface side of a substrate. The fixed ferromagnetic layer is formed on the antiferromagnetic layer. The first nonmagnetic layer is formed on the fixed ferromagnetic layer. The free ferromagnetic layer is formed on the first nonmagnetic layer. The fixed ferromagnetic layer is provided with an amorphous layer. The amorphous layer contains amorphous material having a composition expressed by a chemical formula of X—Y—N. X is an element selected from Co, Fe and Ni. Y is an element selected from AI, Si, Mg, Ta, Nb, Zr, Hf, W, Mo, Ti and V. N represents nitrogen.
摘要翻译：磁阻元件包括反铁磁层，固定铁磁层，第一非磁性层和自由铁磁层。反铁磁性层形成在基板的上表面侧。固定铁磁层形成在反铁磁层上。第一非磁性层形成在固定的铁磁层上。自由铁磁层形成在第一非磁性层上。固定铁磁层设置有非晶层。非晶层含有由化学式X-Y-N表示的组成的无定形材料。 X是选自Co，Fe和Ni的元素。 Y是选自Al，Si，Mg，Ta，Nb，Zr，Hf，W，Mo，Ti和V的元素.N代表氮。

2. 发明授权

US5034273A Nitrogen-containing magnetic alloy film 失效
标题翻译：含氮磁性合金膜
公开(公告)号：US5034273A
公开(公告)日：1991-07-23
申请号：US177766
申请日：1988-04-05
申请人： Hiroshi Sakakima , Koichi Osano , Yuji Omata
发明人： Hiroshi Sakakima , Koichi Osano , Yuji Omata
IPC分类号： C22C19/07 , C22C38/00 , G11B5/127 , H01F10/08 , H01F10/12 , H01F10/13 , H01F10/32
CPC分类号： B82Y25/00 , H01F10/13 , H01F10/132 , H01F10/32 , Y10S428/90 , Y10T428/1157 , Y10T428/12465 , Y10T428/12931
摘要： A nitrogen-containing magnetic alloy film composed of T-M-X amorphous alloy film and (T-M-X)N nitride film, and another film having a composition represented by (T-M-X)N and being compositionally modulated (In both cases T is at least one element selected from the group of Fe, Co, Ni and Mn, M is at least one element selected from the group of Ti, Zr, Hf, Nb, Ta, Cr, Mo, W, Re and Ru, X is at least one element selected from the group of B, Si, Ge and Al, and N is nitrogen.) show excellent characteristics for magnetic head cores such as soft magnetic property and wear resistance.

3. 发明授权

US4833043A Amorphous magneto optical recording medium 失效
标题翻译：非晶磁光记录介质
公开(公告)号：US4833043A
公开(公告)日：1989-05-23
申请号：US72410
申请日：1987-07-13
申请人： Richard N. Gardner
发明人： Richard N. Gardner
IPC分类号： G02F1/00 , G11B5/64 , G11B5/72 , G11B5/851 , G11B11/105 , H01F10/13
CPC分类号： G02F1/0036 , G11B11/10586 , G11B11/10589 , G11B5/64 , G11B5/72 , G11B5/851 , H01F10/13 , H01F10/135 , Y10S428/90
摘要： A magneto optical thin film recording medium is disclosed having very high carrier-to-noise ratios and high rotation angles. A transmission electron microscope photomicrograph (at 200,000 X) of one such medium is shown in FIG. 1. These are multi-phase amorphous materials having magnetic anisotropy perpendicular to the plane of the thin film. They are produced in a triode vacuum sputtering process at vacuums in the range of 4.times.10.sup.-3 to 6.times.10.sup.-4 Torr. By adjusting process parameters such as substrate temperature, anode bias and deposition rate, the properties of the thin film can be altered.
摘要翻译：公开了具有非常高的载波噪声比和高旋转角度的磁光薄膜记录介质。图1中示出了一种这样的介质的透射电子显微镜显微照片（在200,000×）。这些是具有垂直于薄膜平面的磁各向异性的多相非晶材料。它们是在真空度为4×10 -3至6×10 -4乇的三极管真空溅射工艺中生产的。通过调整衬底温度，阳极偏压和沉积速率等工艺参数，可以改变薄膜的性能。

4. 发明授权

US5181020A Thin-film magnetic material and process of production thereof 失效
标题翻译：薄膜磁性材料及其生产工艺
公开(公告)号：US5181020A
公开(公告)日：1993-01-19
申请号：US673550
申请日：1991-03-22
申请人： Shinji Furukawa , Kazuki Oka , Akira Tanimura
发明人： Shinji Furukawa , Kazuki Oka , Akira Tanimura
IPC分类号： C23C14/14 , C23C14/56 , G01D5/14 , G01R33/02 , G01V15/00 , G08B13/24 , H01F1/03 , H01F10/12 , H01F10/13 , H01F41/18
CPC分类号： G08B13/2411 , G01D5/14 , G01R33/02 , G01V15/00 , G08B13/2442 , H01F1/0304 , H01F10/13 , H01F41/18 , Y10S428/90
摘要： A thin-film magnetic material is formed on a polymer substrate. The material exhibits large Barkhausen discontinuity without intentional application of external tensile or torsional stress. The thin-film material may be produced by a sputtering technique wherein the normal to the substrate is directed obliquely to a target member. A biasing magnetic field in proximity to the substrate may also be used during film formation, and the substrate may be supported by a curved holder or a cylindrical roll-to-roll apparatus. The thin-film thus produced may be used as a marker in an article surveillance system or as a magnetic sensor.

5. 发明授权

US4995923A Thin film of amorphous alloy 失效
标题翻译：非晶合金薄膜
公开(公告)号：US4995923A
公开(公告)日：1991-02-26
申请号：US258721
申请日：1988-10-17
申请人： Kunihiko Mizumoto , Koichi Haruta , Hirokazu Kajiura
发明人： Kunihiko Mizumoto , Koichi Haruta , Hirokazu Kajiura
IPC分类号： G11B5/64 , G11B11/105 , H01F10/13
CPC分类号： G11B5/64 , G11B11/10586 , H01F10/13 , Y10S428/928
摘要： A thin film of an amorphous alloy comprising (i) at least one element selected from Fe and Co, (ii) at least one element selected from Pt and Pd and (iii) at least one element selected from (a) 3d transition elements other than Fe and Co, (b) 4d transition elements other than Pd, (c) 5d transition elements other than Pt, (d) light rare earth elements, (e) Group III B elements, (f) Group IV B elements, (g) Group V B elements, and (h) Group VI B elements, and the film having an easy axis of magnetization perpendicular to the film face. The thin film has excellent magnetooptical characteristics including increased coercive force and large Kerr-rotation angle and Faraday-rotation angle, and is excellent in resistance to oxidation and in consequence the coercive force and Kerr-angle of the film do not substantially change with time. The film has a high reflectance as well.

6. 发明授权

US4940966A Article detection and/or recognition using magnetic devices 失效
标题翻译：使用磁性装置的物品检测和/或识别
公开(公告)号：US4940966A
公开(公告)日：1990-07-10
申请号：US317455
申请日：1989-04-10
申请人： Robert M. Pettigrew , Stephen H. Chambers , Dafydd G. Davies , Michael D. Crossfield
发明人： Robert M. Pettigrew , Stephen H. Chambers , Dafydd G. Davies , Michael D. Crossfield
IPC分类号： C23C14/14 , C23C14/34 , G01V15/00 , G08B13/24 , H01F10/13 , H01F10/18 , H01F10/28 , H01F10/30
CPC分类号： G08B13/2411 , G01V15/00 , G08B13/2437 , G08B13/244 , G08B13/2442 , H01F10/13 , H01F10/132 , H01F10/18 , H01F10/28 , H01F10/30 , Y10S428/90
摘要： This application discloses a method of recognizing and/or locating preselected categories of articles, which comprises applying to the articles a plurality of magnetic elements in predetermined associations (e.g. with predetermined numbers of magnetic elements and with predetermined spacings between said elements), whereby when the articles are caused to move relative to a predetermined interrogating magnetic field, each particular association of magnetic elements gives rise to a magnetic signature whereby the article or category of article carrying each of the predetermined associations can be recognized and/or located. A series of tags or markers for use in such a method, as well as a system for determining the location and/or identity of an article within an article conveying network, are also disclosed. Typically, one of such a series of tags will have a plurality of magnetic elements (2, 3, 4, 5, 6, 7, 8, 9, 10) whose individual magnetic characteristics, and whose number, shape, location and orientation on a substrate, determine the individual character of the magnetic response of the tag. By varying one or more of these parameters, a large family of magnetically individually recognizable tags can be generated.
摘要翻译： PCT No.PCT / GB88 / 00447 Sec。 371日期：1989年4月10日 102（e）日期1989年4月10日PCT Filed 1988年6月8日PCT Pub。出版物WO88 / 09979 日期为1988年12月15日。本申请公开了一种识别和/或定位预选类型物品的方法，其包括以预定关联（例如具有预定数量的磁性元件，并且预定间隔在所述元件），由此当使制品相对于预定的询问磁场移动时，磁性元件的每个特定关联产生磁性签名，从而可以识别承载每个预定关联的物品或物品类别和/ 或位于。还公开了用于这种方法的一系列标签或标记，以及用于确定物品传送网络内的物品的位置和/或身份的系统。通常，这样的一系列标签中的一个将具有多个磁性元件（2,3,4,5,6,7,8,9,10），其各自的磁特性及其数量，形状，位置和取向在确定标签的磁响应的个性特征。通过改变这些参数中的一个或多个，可以生成大量的磁性可单独识别的标签。

7. 发明授权

US4748089A Multilayered ferromagnetic amorphous alloy film and magnetic head employing the same 失效
标题翻译：多层铁磁性非晶态合金膜及采用其的磁头
公开(公告)号：US4748089A
公开(公告)日：1988-05-31
申请号：US681261
申请日：1984-12-13
申请人： Noriyuki Kumasaka , Kazuo Shiiki , Shigekazu Otomo , Yoshihiro Shiroishi , Takeo Yamashita , Noritoshi Saito , Kiminari Shinagawa , Mitsuhiro Kudo
发明人： Noriyuki Kumasaka , Kazuo Shiiki , Shigekazu Otomo , Yoshihiro Shiroishi , Takeo Yamashita , Noritoshi Saito , Kiminari Shinagawa , Mitsuhiro Kudo
IPC分类号： H01F10/00 , G11B5/127 , G11B5/147 , G11B5/21 , G11B5/31 , H01F10/12 , H01F10/13 , H01F10/32 , H01F10/08
CPC分类号： B82Y25/00 , G11B5/1278 , G11B5/147 , G11B5/21 , G11B5/31 , H01F10/13 , H01F10/3204 , Y10S428/926 , Y10S428/928 , Y10T428/115 , Y10T428/12632 , Y10T428/12861 , Y10T428/12937 , Y10T428/12944 , Y10T428/12951
摘要： A multilayered ferromagnetic amorphous alloy film is constituted by a plurality of main ferromagnetic material alloy films of a ferromagnetic amorphous alloy laminated one upon another with a spacer ferromagnetic material layer interposed therebetween, the spacer ferromagnetic material layer being of a ferromagnetic material different from the ferromagnetic alloy. Also disclosed is a magnetic head employing the above-described multilayered film for, at least, a portion of a core thereof. The multilayered film has excellent magnetic characteristics and is easily patterned.
摘要翻译：多层铁磁性非晶态合金膜由多个铁磁性非晶合金的主要铁磁材料合金膜构成，层叠铁磁材料层彼此层叠，间隔铁磁材料层为与铁磁性合金不同的铁磁材料。还公开了使用上述多层膜至少部分其芯的磁头。多层膜具有优异的磁特性并且容易图案化。

8. 发明授权

US4684454A Sputtering process for making magneto optic alloy 失效
标题翻译：制造磁光合金的溅射工艺
公开(公告)号：US4684454A
公开(公告)日：1987-08-04
申请号：US861081
申请日：1986-05-08
申请人： Richard N. Gardner
发明人： Richard N. Gardner
IPC分类号： G02F1/00 , G11B5/64 , G11B5/72 , G11B5/851 , G11B11/105 , H01F10/13 , C23C14/42
CPC分类号： G11B5/64 , G02F1/0036 , G11B11/10586 , G11B11/10589 , G11B5/72 , G11B5/851 , H01F10/13 , H01F10/135
摘要： A triode vacuum sputtering process, and vacuums in the range of 4.times.10.sup.-3 to 6.times.10.sup.-4 Torr are used to obtain amorphous rate earth/transition metal alloy thin films useful as magneto optic media. By adjusting process parameters such as substrate temperature, anode bias and deposition rate, the properties of the thin film can be altered.
摘要翻译：使用三极管真空溅射工艺，并且使用4×10 -3至6×10 -4乇范围内的真空来获得用作磁光介质的无定形速率的土/过渡金属合金薄膜。通过调整衬底温度，阳极偏压和沉积速率等工艺参数，可以改变薄膜的性能。

9. 发明授权

US4126494A Magnetic transfer record film 失效
标题翻译：磁记录膜
公开(公告)号：US4126494A
公开(公告)日：1978-11-21
申请号：US733929
申请日：1976-10-19
申请人： Nobutake Imamura , Yoshinori Mimura , Toshihiko Kobayashi
发明人： Nobutake Imamura , Yoshinori Mimura , Toshihiko Kobayashi
IPC分类号： C22C45/00 , G03G5/16 , G03G19/00 , G11B5/86 , G11B11/105 , G11B27/36 , H01F10/12 , H01F10/13 , C22C19/00 , C22C28/00 , C22C38/00
CPC分类号： G03G5/16 , C22C45/00 , C22C45/008 , G03G19/00 , G11B11/10515 , G11B11/10547 , G11B27/36 , G11B5/865 , H01F10/12 , H01F10/13 , H01F10/135
摘要： A magnetic transfer record film employed for magneto-optically reading magnetic record patterns. The magnetic transfer record film is formed, as the principal component, of an alloy of a heavy rare earth metal and a transition metal and has an easy axis of magnetization in a direction perpendicular to the film surface and further has an alloy composition included in a range of .+-. 10% at the periphery of a center alloy composition where the saturation magnetic moment becomes minimum with respect to a change of the composition within a temperature range used. The magnetic transfer record film is deposited on a transparent substrate and positioned closely to a magnetic record medium on which a magnetic record pattern to be observed is stored, so that the magnetic record pattern is transferred to the magnetic transfer record film. An optical system is provided to magneto-optically read out the transferred magnetic record pattern from the magnetic transfer record film.
摘要翻译：用于磁光读取磁记录图案的磁转印记录膜。磁性记录膜作为主要成分形成重稀土金属和过渡金属的合金，并且在垂直于膜表面的方向上具有容易的磁化轴，并且还包括在相对于所使用的温度范围内的组成变化，饱和磁矩变得最小的中心合金组成的周边处的+/- 10％的范围。磁转印记录膜沉积在透明基板上并且紧密地定位在其上存储有待观察的磁记录图案的磁记录介质上，使得磁记录图案被传送到磁转印记录膜。提供一种光学系统，用于从磁转印记录膜磁光读出转印的磁记录图形。

10. 发明申请

US20190237099A1 MAGNETO-RESISTANCE ELEMENT IN WHICH I-III-VI2 COMPOUND SEMICONDUCTOR IS USED, METHOD FOR MANUFACTURING SAID MAGNETO-RESISTANCE ELEMENT, AND MAGNETIC STORAGE DEVICE AND SPIN TRANSISTOR IN WHICH SAID MAGNETO-RESISTANCE ELEMENT IS USED 审中-公开
公开(公告)号：US20190237099A1
公开(公告)日：2019-08-01
申请号：US16311367
申请日：2017-06-23
申请人： NATIONAL INSTITUTE FOR MATERIALS SCIENCE
发明人： Shinya KASAI , Yukiko TAKAHASHI , Pohan CHENG , IKHTIAR , Seiji MITANI , Tadakatsu OHKUBO , Kazuhiro HONO
IPC分类号： G11B5/39 , H01F10/13 , H01F10/16 , H01F10/30 , H01L29/82 , H01L43/08 , H01L43/10 , H01L43/12
CPC分类号： G11B5/3909 , G11B5/39 , H01F10/13 , H01F10/132 , H01F10/16 , H01F10/30 , H01L29/82 , H01L43/08 , H01L43/10 , H01L43/12
摘要： An object of the present invention is to provide a Magneto-Resistance (MR) element showing a high Magneto-Resistance (MR) ratio and having a suitable Resistance-Area (RA) for device applications. The MR element of the present invention has a laminated structure including a first ferromagnetic layer 16, a non-magnetic layer 18, and a second ferromagnetic layer 20 on a substrate 10, wherein the first ferromagnetic layer 16 includes a Heusler alloy, the second ferromagnetic layer 20 includes a Heusler alloy, the non-magnetic layer 18 includes a I-III-VI2 chalcopyrite-type compound semiconductor, and the non-magnetic layer 18 has a thickness of 0.5 to 3 nm, and wherein the MR element shows a Magneto-Resistance (MR) change of 40% or more, and has a resistance-area (RA) of 0.1 [Ωμm2] or more and 3 [Ωμm2] or less.

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