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1. 发明授权

US11756578B2 Ferrimagnetic Heusler compounds with high spin polarization 有权
公开(公告)号：US11756578B2
公开(公告)日：2023-09-12
申请号：US17318998
申请日：2021-05-12
申请人： Samsung Electronics Co., Ltd. , INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Jaewoo Jeong , Sergey Faleev , Panagiotis Charilaos Filippou , Yari Ferrante , Stuart Stephen Papworth Parkin , Mahesh Samant
IPC分类号： G11B5/39 , G11C11/16 , G11C19/08 , H01F1/03 , H01F10/193 , H01F10/30 , H01F10/32 , H01F41/30 , H10N50/85 , H10N50/10 , H10N50/01
CPC分类号： G11B5/3909 , G11C11/161 , G11C11/1675 , G11C19/08 , H01F1/03 , H01F10/1936 , H01F10/30 , H01F10/324 , H01F41/302 , H10N50/01 , H10N50/10 , H10N50/85 , H01F10/3272 , H01F10/3286
摘要： A magnetic device and method for providing the magnetic device are disclosed. The magnetic device includes a multilayer structure and a magnetic layer. The multilayer structure includes alternating layers of A and E. A includes a first material. The first material includes at least one of Co, Ru, or Ir. The first material may include an IrCo alloy. E includes at least one other material that includes Al. The other material(s) may include an alloy selected from AlGa, AlSn, AlGe, AlGaGe, AlGaSn, AlGeSn, and AlGaGeSn. A composition of the multilayer structure is represented by A1-xEx, where x is at least 0.45 and not more than 0.55. The magnetic layer includes an Al-doped Heusler compound. The magnetic layer shares an interface with the multilayer structure.

2. 发明授权

US10497417B2 Spin current assisted magnetoresistance effect device 有权
公开(公告)号：US10497417B2
公开(公告)日：2019-12-03
申请号：US16093373
申请日：2017-05-22
申请人： TDK CORPORATION
发明人： Tomoyuki Sasaki , Tohru Oikawa
IPC分类号： G11C11/00 , G11C11/16 , H01L21/8239 , H01L43/08 , H01L27/105 , H01F10/32 , H01L27/22 , H01L43/02 , H01L43/06
CPC分类号： G11C11/161 , G11C11/16 , G11C11/1675 , H01F10/324 , H01F10/329 , H01F10/3254 , H01L21/8239 , H01L27/105 , H01L27/222 , H01L43/02 , H01L43/06 , H01L43/08 , H01F10/3286
摘要： A spin current assisted magnetoresistance effect device includes: a spin current assisted magnetoresistance effect element including a magnetoresistance effect element part and a spin-orbit torque wiring; and a controller electrically connected to the spin current assisted magnetoresistance effect element. In a portion in which the magnetoresistance effect element part and the spin-orbit torque wiring are bonded, an STT inversion current flowing through the magnetoresistance effect element part and an SOT inversion current flowing through the spin-orbit torque wiring merge or are divided, and the controller is configured to be capable of performing control for applying the STT inversion current to the spin current assisted magnetoresistance effect element at the same time as an application of the SOT inversion current or a time application of the SOT inversion current.

3. 发明授权

US10008225B2 Magnetic sensor device having a magneto-resistive structure that generates a vortex magnetization pattern 有权
公开(公告)号：US10008225B2
公开(公告)日：2018-06-26
申请号：US15360079
申请日：2016-11-23
申请人： Infineon Technologies AG
发明人： Wolfgang Raberg , Tobias Wurft
IPC分类号： G11B5/39 , G01R33/09 , H01F10/32 , G01R33/00
CPC分类号： G11B5/398 , G01R33/0023 , G01R33/09 , G11B2005/3996 , H01F10/324 , H01F10/3268
摘要： An embodiment relates to a magnetic sensor device, comprising a magneto-resistive structure. The magneto-resistive structure comprises a magnetic free layer configured to spontaneously generate a closed flux magnetization pattern in the magnetic free layer. The magneto-resistive structure also comprises a magnetic reference layer having a non-closed flux reference magnetization pattern. The magnetic sensor device further comprises a magnetic biasing structure configured to generate a biasing field in the magnetic free layer, the biasing field having a non-zero magnetic biasing field component perpendicular to the reference magnetization pattern.

4. 发明授权

US09928951B2 Spin valve element and method of manufacturing same 有权
公开(公告)号：US09928951B2
公开(公告)日：2018-03-27
申请号：US15131749
申请日：2016-04-18
申请人： III Holdings 3, LLC
发明人： Haruo Kawakami , Yasushi Ogimoto , Eiki Adachi
IPC分类号： H01F10/32 , B82Y25/00 , B82Y40/00 , H01F41/30 , H01L43/08 , H01L43/12 , H01P5/02 , H03B15/00
CPC分类号： H01F10/324 , B82Y25/00 , B82Y40/00 , H01F10/325 , H01F10/3254 , H01F41/302 , H01L43/08 , H01L43/12 , H01P5/02 , H03B15/006 , Y10T428/1171
摘要： A spin valve element may include a plurality of magnetic element groups. Each magnetic element group may be formed, at least in part, by a plurality of magnetic elements being connected in parallel. Each magnetic element may include an intermediate layer and a pair of ferromagnetic layers sandwiching the intermediate layer. The plurality of magnetic element groups may be connected together in series or in parallel. The plurality of magnetic elements may be configured to undergo a microwave oscillation and are placed in proximity sufficient that oscillation signals are configured to be generated with the magnetic elements mutually synchronized. The proximity may include a range equal to a wavelength of the microwave oscillation.

5. 发明申请

US20180040815A1 MAGNETORESISTANCE EFFECT ELEMENT 审中-公开
公开(公告)号：US20180040815A1
公开(公告)日：2018-02-08
申请号：US15554089
申请日：2016-03-29
申请人： TDK CORPORATION
发明人： Tomoyuki SASAKI
IPC分类号： H01L43/08 , H01L43/10 , H01F10/32 , G01R33/09
CPC分类号： H01L43/08 , G01R33/09 , G01R33/098 , G11B5/39 , H01F10/14 , H01F10/16 , H01F10/26 , H01F10/32 , H01F10/324 , H01L27/105 , H01L29/82 , H01L43/10
摘要： A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a composition formula of AB2Ox (0

6. 发明授权

US09762182B2 Magnetoresistive effect oscillator 有权
公开(公告)号：US09762182B2
公开(公告)日：2017-09-12
申请号：US15098617
申请日：2016-04-14
申请人： TDK CORPORATION
发明人： Tsuyoshi Suzuki , Eiji Suzuki
IPC分类号： H03B15/00 , H03B5/12 , H01F10/26 , H01F10/32
CPC分类号： H03B15/006 , H01F10/26 , H01F10/324 , H01F10/3286 , H03B5/1206 , H03B15/00
摘要： A magnetoresistive effect oscillator executes a first step of applying a current, which has a first current density larger than a critical current density JO for oscillation, to a magnetoresistive effect element for a time TP, and then executes a second step of applying a current, which has a second current density JS smaller than the first current density and not smaller than the critical current density JO for oscillation, to the magnetoresistive effect element. The following formulae (1), (2) and (3), or the following formulae (1) and (4) are satisfied on an assumption that an average value of the first current density during the time TP in the first step is JP, a critical current density for magnetization reversal of the magnetoresistive effect element is JR, and a magnetization reversal time of the magnetoresistive effect element is TR: 0.1 × T R ⁡ ( J R - J O ) J p - J S

7. 发明授权

US09691425B2 Laminating magnetic cores for on-chip magnetic devices 有权
公开(公告)号：US09691425B2
公开(公告)日：2017-06-27
申请号：US13969786
申请日：2013-08-19
申请人： International Business Machines Corporation
发明人： Robert E. Fontana, Jr. , William J. Gallagher , Philipp Herget , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Bucknell C. Webb
IPC分类号： C25D5/10 , G11B5/66 , C25D7/00 , C25D7/12 , C25D3/54 , C25D5/14 , C25D9/10 , H01F10/32 , C25D3/58 , C25D5/18 , C25D5/50
CPC分类号： H01F10/3231 , C25D3/54 , C25D3/58 , C25D5/10 , C25D5/14 , C25D5/18 , C25D5/50 , C25D7/001 , C25D7/123 , C25D9/08 , C25D9/10 , C25D17/001 , G11B5/66 , H01F3/02 , H01F10/3236 , H01F10/324 , H01F10/325 , H01F10/3254 , H01F41/02
摘要： A laminating structure includes a first magnetic layer, a second magnetic layer, a first spacer disposed between the first and second magnetic layers and a second spacer disposed on the second magnetic layer.

8. 发明授权

US09318248B2 Spin valve element and method of manufacturing same 有权
标题翻译：自旋阀元件及其制造方法
公开(公告)号：US09318248B2
公开(公告)日：2016-04-19
申请号：US12739741
申请日：2008-08-28
申请人： Haruo Kawakami , Yasushi Ogimoto , Eiki Adachi
发明人： Haruo Kawakami , Yasushi Ogimoto , Eiki Adachi
IPC分类号： H01F10/32 , H01F41/30 , B82Y25/00 , B82Y40/00 , H01L43/08 , H01L43/12 , H01P5/02 , H03B15/00
CPC分类号： H01F10/324 , B82Y25/00 , B82Y40/00 , H01F10/325 , H01F10/3254 , H01F41/302 , H01L43/08 , H01L43/12 , H01P5/02 , H03B15/006 , Y10T428/1171
摘要： A spin valve element including parallelly or serially connected magnetic element groups, each magnetic element group having a plurality of magnetic elements that each include an intermediate layer of an insulating member or a nonmagnetic member sandwiched by a pair of ferromagnetic layers. The plurality of magnetic elements are further connected either in series or in parallel.
摘要翻译：一种自旋阀元件，包括并联或串联连接的磁性元件组，每个磁性元件组具有多个磁性元件，每个磁性元件包括绝缘元件的中间层或被一对铁磁层夹在一起的非磁性元件。多个磁性元件进一步串联或并联连接。

9. 发明授权

US09064519B2 Soft magnetic under layer 有权
标题翻译：软磁下层
公开(公告)号：US09064519B2
公开(公告)日：2015-06-23
申请号：US13816789
申请日：2012-07-05
申请人： Jun Fukuoka , Kazuya Saitoh
发明人： Jun Fukuoka , Kazuya Saitoh
IPC分类号： G11B5/667 , H01F10/32
CPC分类号： G11B5/667 , H01F10/324
摘要： A soft magnetic under layer has a low antiferromagnetic coupling force and a high saturation magnetic flux density. The soft magnetic under layer includes two soft magnetic layers and a spacer layer. The soft magnetic layers are expressed by a composition formula as (Fe100-XCoX)100-Y-MY by atomic ratio, wherein 15≦X≦30, 10≦Y≦30, and an element M is at least one element selected from a group of Ta, Ti, Zr, Nb, Cr, and B; are composed of residual incidental impurities; and each have a thickness of 10 to 50 nm. The spacer layer is composed of one element selected from a group of Ru, Cr, Cu, Re, and Rh and has a thickness of 0.10 to 0.50 nm. The soft magnetic layers are antiferromagnetically coupled through the spacer layer inserted therebetween. An antiferromagnetic coupling force between the soft magnetic layers is 100 to 4,000 A/m.
摘要翻译：软磁下层具有低反铁磁耦合力和高饱和磁通密度。软磁下层包括两个软磁层和间隔层。软磁性层由以原子比计的（Fe100-XCoX）100-Y-MY的组成式表示，其中15＆lt; NlE; X＆lt; NE; 30,10＆amp; Y; Y＆nlE; 30，元素M为选自 Ta，Ti，Zr，Nb，Cr和B组; 由残留杂质组成; 并且各自具有10至50nm的厚度。间隔层由选自Ru，Cr，Cu，Re和Rh中的一种元素组成，并且具有0.10至0.50nm的厚度。软磁性层通过插入其间的间隔层进行反铁磁耦合。软磁层之间的反铁磁耦合力为100〜4000A / m。

10. 发明申请

US20140216939A1 LAMINATING MAGNETIC CORES FOR ON-CHIP MAGNETIC DEVICES 有权
标题翻译：用于片上磁性装置的层压磁性线
公开(公告)号：US20140216939A1
公开(公告)日：2014-08-07
申请号：US13760154
申请日：2013-02-06
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Robert E. Fontana, JR. , William J. Gallagher , Philipp Herget , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Bucknell C. Webb
IPC分类号： G11B5/66
CPC分类号： H01F10/3231 , C25D3/54 , C25D3/58 , C25D5/10 , C25D5/14 , C25D5/18 , C25D5/50 , C25D7/001 , C25D7/123 , C25D9/08 , C25D9/10 , C25D17/001 , G11B5/66 , H01F3/02 , H01F10/3236 , H01F10/324 , H01F10/325 , H01F10/3254 , H01F41/02
摘要： A laminating structure includes a first magnetic layer, a second magnetic layer, a first spacer disposed between the first and second magnetic layers and a second spacer disposed on the second magnetic layer.
摘要翻译：层叠结构包括第一磁性层，第二磁性层，设置在第一和第二磁性层之间的第一间隔件和设置在第二磁性层上的第二间隔件。

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