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    • 1. 发明授权
    • Substrate processing apparatus and substrate processing method
    • 基板加工装置及基板处理方法
    • US07807587B2
    • 2010-10-05
    • US12083342
    • 2006-10-06
    • Hiroyuki MatsuuraKen Nakao
    • Hiroyuki MatsuuraKen Nakao
    • H01L21/00
    • H01L21/67303C23C16/45525C23C16/45546C23C16/45578C23C16/45591C23C16/4584F27B17/0025H01L21/67109
    • The present invention is a substrate processing apparatus including: a holder that holds substrates in a tier-like manner; a processing container that contains the holder and that conducts a predetermined thermal process to the substrates in a process-gas atmosphere under a predetermined temperature and pressure; a gas-introducing part that introduces a process gas into the processing container; a gas-discharging part that discharges a gas from the processing container to create a predetermined vacuum pressure therein; and a heating part that heats the processing container; wherein the holder is provided with baffle plates each of which forms a processing space for each substrate when the holder is contained in the processing container; the gas-introducing part is provided with gas introduction holes disposed at one lateral side of the respective processing spaces; and the gas-discharging part is provided with gas discharge holes disposed at the other lateral side of the respective processing spaces, oppositely to the gas introduction holes.
    • 本发明是一种基板处理装置,其特征在于,包括:以层状保持基板的保持架; 处理容器,其包含所述保持器,并且在预定温度和压力下在处理气体气氛中对所述基板进行预定的热处理; 气体导入部,其将处理气体引入到处理容器中; 气体排出部,其从所述处理容器排出气体,以在其中产生预定的真空压力; 以及加热部,其对加工容器进行加热; 其中,所述保持器设置有挡板,当所述保持器容纳在所述处理容器中时,所述挡板形成每个基板的处理空间; 气体导入部设置有设置在各个处理空间的一个侧面的气体导入孔; 并且气体排出部设置有与各个处理空间的与气体导入孔相反的另一侧的侧面的排气孔。
    • 2. 发明申请
    • Substrate Processing Apparatus and Substrate Processing Method
    • 基板加工装置及基板加工方法
    • US20090305512A1
    • 2009-12-10
    • US12083342
    • 2006-10-06
    • Hiroyuki MatsuuraKen Nakao
    • Hiroyuki MatsuuraKen Nakao
    • H01L21/465C23C16/44
    • H01L21/67303C23C16/45525C23C16/45546C23C16/45578C23C16/45591C23C16/4584F27B17/0025H01L21/67109
    • The present invention is a substrate processing apparatus including: a holder that holds substrates in a tier-like manner; a processing container that contains the holder and that conducts a predetermined thermal process to the substrates in a process-gas atmosphere under a predetermined temperature and pressure; a gas-introducing part that introduces a process gas into the processing container; a gas-discharging part that discharges a gas from the processing container to create a predetermined vacuum pressure therein; and a heating part that heats the processing container; wherein the holder is provided with baffle plates each of which forms a processing space for each substrate when the holder is contained in the processing container; the gas-introducing part is provided with gas introduction holes disposed at one lateral side of the respective processing spaces; and the gas-discharging part is provided with gas discharge holes disposed at the other lateral side of the respective processing spaces, oppositely to the gas introduction holes.
    • 本发明是一种基板处理装置,其特征在于,包括:以层状保持基板的保持架; 处理容器,其包含所述保持器,并且在预定温度和压力下在处理气体气氛中对所述基板进行预定的热处理; 气体导入部,其将处理气体引入到处理容器中; 气体排出部,其从所述处理容器排出气体,以在其中产生预定的真空压力; 以及加热部,其对加工容器进行加热; 其中,所述保持器设置有挡板,当所述保持器容纳在所述处理容器中时,所述挡板形成每个基板的处理空间; 气体导入部设置有设置在各个处理空间的一个侧面的气体导入孔; 并且气体排出部设置有与各个处理空间的与气体导入孔相反的另一侧的侧面的排气孔。
    • 3. 发明申请
    • HEAT TREATMENT DEVICE
    • 热处理装置
    • US20140174364A1
    • 2014-06-26
    • US14236955
    • 2012-07-23
    • Ken NakaoEisuke Morisaki
    • Ken NakaoEisuke Morisaki
    • C23C16/46
    • C23C16/46C23C16/4588H01L21/67109H01L21/67115
    • A heat treatment device includes: a processing container that accommodates a plurality of substrates to be subjected to heat treatment; a substrate holding member that holds the plurality of substrates; an induction heating coil that forms an induction magnetic field inside the processing container; a high frequency power supply that applies a high frequency electric power to the induction heating coil; a gas supply mechanism that supplies a processing gas to the inside of the processing container; an exhaust mechanism that exhausts the inside of the processing container; and an induction heating element provided between the induction heating coil and the substrate holding member to enclose the substrate holding member inside the treatment container. The induction heating element is heated by an induction electric current formed by the induction magnetic field, and the substrates are heated by radiation heat from the induction heating element. The flow of the inductive electric current to the substrate is blocked by the induction heating element.
    • 热处理装置包括:容纳要进行热处理的多个基板的处理容器; 保持所述多个基板的基板保持部件; 感应加热线圈,其在处理容器内部形成感应磁场; 向感应加热线圈施加高频电力的高频电源; 气体供给机构,其向处理容器的内部供给处理气体; 排出处理容器内部的排气机构; 以及感应加热元件,其设置在所述感应加热线圈和所述基板保持部件之间,以将所述基板保持部件包围在所述处理容器内。 感应加热元件由感应磁场形成的感应电流加热,并且基板被来自感应加热元件的辐射热加热。 感应电流流向基板被感应加热元件阻挡。
    • 4. 发明申请
    • GAS SUPPLY SYSTEM FOR SEMICONDUCTOR MANUFACTURING APPARATUS
    • 用于半导体制造设备的气体供应系统
    • US20080251018A1
    • 2008-10-16
    • US12061982
    • 2008-04-03
    • Shuji MORIYAKen Nakao
    • Shuji MORIYAKen Nakao
    • C23C16/00
    • C23C16/4402C23C14/564Y10S55/15
    • A gas supply system according to the present invention comprises a gas filter disposed in a gas supply flow passage through which a gas is supplied to a semiconductor manufacturing apparatus and a metal component remover disposed in the gas supply flow passage downstream relative to the gas filter, which removes a volatile metal component contained in the gas flowing through the gas supply flow passage by liquefying the volatile metal component. The structure adopted in the gas supply system prevents entry of the volatile metal component, which cannot be eliminated through the gas filter, into the semiconductor manufacturing apparatus as the corrosive gas is supplied thereto by the gas supply flow passage.
    • 根据本发明的气体供给系统包括:气体过滤器,设置在气体供给流路中,通过该气体供给流路将气体供给到半导体制造装置,并且配置在气体供给流路中的金属成分去除器相对于气体过滤器下游, 其通过液化挥发性金属成分除去流过气体供给流路的气体中所含的挥发性金属成分。 气体供给系统中采用的结构防止了由气体供给流路供给腐蚀性气体而将不能通过气体过滤器排出的挥发性金属成分进入半导体制造装置。
    • 6. 发明申请
    • Heat treatment apparatus
    • 热处理设备
    • US20060021582A1
    • 2006-02-02
    • US10528704
    • 2003-08-29
    • Takanori SaitoKenichi YamagaKen Nakao
    • Takanori SaitoKenichi YamagaKen Nakao
    • C23C16/00
    • H01L21/67109
    • The present invention is a thermal processing unit including: a heating-furnace body whose upper end has an opening; a reaction tube consisting of a single tube contained in the heating-furnace body; a gas-discharging-unit connecting portion formed at an upper portion of the reaction tube, the gas-discharging-unit connecting portion having a narrow diameter; a substrate-to-be-processed supporting member for supporting a substrate to be processed, contained in the heating-furnace body; and a heating unit for heating the substrate to be processed supported by the substrate-to-be-processed supporting member. The heating unit has: a first heating portion arranged around the reaction tube, a second heating portion arranged around the gas-discharging-unit connecting portion, a third heating portion arranged around an upper portion of the reaction tube, a fourth heating portion arranged around a lower portion of the reaction tube, and a fifth heating portion arranged under the substrate-to-be-processed supporting member.
    • 本发明是一种热处理单元,包括:上端具有开口的加热炉体; 由包含在加热炉体内的单个管构成的反应管; 气体排出单元连接部,形成在反应管的上部,气体排出单元连接部具有窄直径; 用于支撑加热炉体内所包含的待处理基板的待处理基板的支撑部件; 以及加热单元,用于加热由要处理的基板支撑构件支撑的待处理基板。 所述加热单元具有:设置在所述反应管周围的第一加热部,配置在所述排气单元连接部周围的第二加热部,配置在所述反应管的上部的第三加热部, 反应管的下部,以及配置在被处理基板的支撑部件的下方的第五加热部。