专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060021582A1 Heat treatment apparatus 有权
标题翻译：热处理设备
公开(公告)号：US20060021582A1
公开(公告)日：2006-02-02
申请号：US10528704
申请日：2003-08-29
申请人： Takanori Saito , Kenichi Yamaga , Ken Nakao
发明人： Takanori Saito , Kenichi Yamaga , Ken Nakao
IPC分类号： C23C16/00
CPC分类号： H01L21/67109
摘要： The present invention is a thermal processing unit including: a heating-furnace body whose upper end has an opening; a reaction tube consisting of a single tube contained in the heating-furnace body; a gas-discharging-unit connecting portion formed at an upper portion of the reaction tube, the gas-discharging-unit connecting portion having a narrow diameter; a substrate-to-be-processed supporting member for supporting a substrate to be processed, contained in the heating-furnace body; and a heating unit for heating the substrate to be processed supported by the substrate-to-be-processed supporting member. The heating unit has: a first heating portion arranged around the reaction tube, a second heating portion arranged around the gas-discharging-unit connecting portion, a third heating portion arranged around an upper portion of the reaction tube, a fourth heating portion arranged around a lower portion of the reaction tube, and a fifth heating portion arranged under the substrate-to-be-processed supporting member.
摘要翻译：本发明是一种热处理单元，包括：上端具有开口的加热炉体; 由包含在加热炉体内的单个管构成的反应管; 气体排出单元连接部，形成在反应管的上部，气体排出单元连接部具有窄直径; 用于支撑加热炉体内所包含的待处理基板的待处理基板的支撑部件; 以及加热单元，用于加热由要处理的基板支撑构件支撑的待处理基板。所述加热单元具有：设置在所述反应管周围的第一加热部，配置在所述排气单元连接部周围的第二加热部，配置在所述反应管的上部的第三加热部，反应管的下部，以及配置在被处理基板的支撑部件的下方的第五加热部。

2. 发明授权

US07311520B2 Heat treatment apparatus 有权
标题翻译：热处理设备
公开(公告)号：US07311520B2
公开(公告)日：2007-12-25
申请号：US10528704
申请日：2003-08-29
申请人： Takanori Saito , Kenichi Yamaga , Ken Nakao
发明人： Takanori Saito , Kenichi Yamaga , Ken Nakao
IPC分类号： F27D11/00
CPC分类号： H01L21/67109
摘要： The present invention is a thermal processing unit including: a heating-furnace body whose upper end has an opening; a reaction tube consisting of a single tube contained in the heating-furnace body; a gas-discharging-unit connecting portion formed at an upper portion of the reaction tube, the gas-discharging-unit connecting portion having a narrow diameter; a substrate-to-be-processed supporting member for supporting a substrate to be processed, contained in the heating-furnace body; and a heating unit for heating the substrate to be processed supported by the substrate-to-be-processed supporting member. The heating unit has: a first heating portion arranged around the reaction tube, a second heating portion arranged around the gas-discharging-unit connecting portion, a third heating portion arranged around an upper portion of the reaction tube, a fourth heating portion arranged around a lower portion of the reaction tube, and a fifth heating portion arranged under the substrate-to-be-processed supporting member.
摘要翻译：本发明是一种热处理单元，包括：上端具有开口的加热炉体; 由包含在加热炉体内的单个管构成的反应管; 气体排出单元连接部，形成在反应管的上部，气体排出单元连接部具有窄直径; 用于支撑加热炉体内所包含的待处理基板的待处理基板的支撑部件; 以及加热单元，用于加热由要处理的基板支撑构件支撑的待处理基板。所述加热单元具有：设置在所述反应管周围的第一加热部，配置在所述排气单元连接部周围的第二加热部，配置在所述反应管的上部的第三加热部，反应管的下部，以及配置在被处理基板的支撑部件的下方的第五加热部。

3. 发明授权

US07102104B2 Heat treatment system 失效
标题翻译：热处理系统
公开(公告)号：US07102104B2
公开(公告)日：2006-09-05
申请号：US10505863
申请日：2002-11-25
申请人： Takanori Saito , Kenichi Yamaga , Ken Nakao
发明人： Takanori Saito , Kenichi Yamaga , Ken Nakao
IPC分类号： F27B5/14
CPC分类号： H01L21/67109
摘要： The present invention is a thermal processing unit that includes: a tubular processing container; an object-to-be-processed holding unit that holds a plurality of objects to be processed in a tier-like manner and that can be inserted into and taken out from the processing container; a process-gas introducing unit that introduces a predetermined process gas into the processing container; a heating unit provided in the processing container, the heating unit heating the plurality of objects to be processed held by the object-to-be-processed holding unit when the object-to-be-processed holding unit is inserted into the processing container; and a container cooling unit that cools an outside wall surface of the processing container.
摘要翻译：本发明是一种热处理单元，其包括：管状处理容器; 待处理的待处理的保持单元，其以层状的方式保持待处理的多个对象，并且可以被插入到处理容器中并从处理容器中取出; 将预定的处理气体引入到处理容器内的处理气体导入部; 设置在处理容器中的加热单元，当待处理保持单元插入处理容器中时，加热单元将待处理保持单元保持的多个待处理对象加热; 以及冷却处理容器的外壁表面的容器冷却单元。

4. 发明申请

US20050121432A1 Heat treatment system 失效
标题翻译：热处理系统
公开(公告)号：US20050121432A1
公开(公告)日：2005-06-09
申请号：US10505863
申请日：2002-11-25
申请人： Takanori Saito , Kenichi Yamaga , Ken Nakao
发明人： Takanori Saito , Kenichi Yamaga , Ken Nakao
IPC分类号： H01L21/28 , H01L21/00 , H01L21/02 , H01L21/205 , H01L21/324 , F27B5/14 , F27D11/00
CPC分类号： H01L21/67109
摘要： The present invention is a thermal processing unit that includes: a tubular processing container; an object-to-be-processed holding unit that holds a plurality of objects to be processed in a tier-like manner and that can be inserted into and taken out from the processing container; a process-gas introducing unit that introduces a predetermined process gas into the processing container; a heating unit provided in the processing container, the heating unit heating the plurality of objects to be processed held by the object-to-be-processed holding unit when the object-to-be-processed holding unit is inserted into the processing container; and a container cooling unit that cools an outside wall surface of the processing container.
摘要翻译：本发明是一种热处理单元，其包括：管状处理容器; 待处理的待处理的保持单元，其以层状的方式保持待处理的多个对象，并且可以被插入到处理容器中并从处理容器中取出; 将预定的处理气体引入到处理容器内的处理气体导入部; 设置在处理容器中的加热单元，当待处理保持单元插入处理容器中时，加热单元将待处理保持单元保持的多个待处理对象加热; 以及冷却处理容器的外壁表面的容器冷却单元。

5. 发明授权

US07888622B2 Heat-processing furnace and manufacturing method thereof 有权
标题翻译：热处理炉及其制造方法
公开(公告)号：US07888622B2
公开(公告)日：2011-02-15
申请号：US11902333
申请日：2007-09-20
申请人： Ken Nakao , Kenichi Yamaga , Makoto Kobayashi
发明人： Ken Nakao , Kenichi Yamaga , Makoto Kobayashi
IPC分类号： F27D11/00 , H05B3/00
CPC分类号： F27B17/0025 , H01L21/67103 , H05B3/08 , Y10T29/49083
摘要： A heat-processing furnace comprises: a processing vessel for housing an object to be processed to thermally heat the object to be processed; a cylindrical heat insulating member surrounding the processing vessel; a helical heating resistor disposed along an inner circumferential surface of the heat insulating member; and support members axially disposed on the inner circumferential surface of the heat insulating member, for supporting the heating resistor at predetermined pitches. A plurality of terminal plates are disposed outside the heating resistor at suitable intervals therebetween and attached to the heating resistor, the terminal plates radially passing through the heat insulating member to be extended outside. A plurality of fixing plates are disposed outside the heating resistor at suitable intervals therebetween and attached to the heating resistor, the fixing plates being fixed in the heat insulating member. The fixing plates are attached to the heating resistor by the same attachment structure as the attachment structure of the terminal plates to the heating resistor.
摘要翻译：一种热处理炉包括：用于容纳待加工物体的热处理容器，用于对被处理物体进行热加热; 围绕所述处理容器的圆柱形绝热构件; 螺旋加热电阻器，沿着所述绝热构件的内周面设置; 以及轴向设置在绝热构件的内周面上的支撑构件，用于以预定间距支撑加热电阻器。多个端子板以适当的间隔设置在加热电阻器的外侧，并且附接到加热电阻器，端子板径向通过隔热构件延伸到外部。多个固定板以适当的间隔设置在加热电阻器的外部，并附着在加热电阻器上，固定板固定在绝热构件中。固定板通过与端子板与加热电阻器的连接结构相同的附接结构附接到加热电阻器。

6. 发明申请

US20090194521A1 Thermal processing furnace 有权
标题翻译：热处理炉
公开(公告)号：US20090194521A1
公开(公告)日：2009-08-06
申请号：US12320433
申请日：2009-01-26
申请人： Makoto Kobayashi , Kenichi Yamaga , Ken Nakao
发明人： Makoto Kobayashi , Kenichi Yamaga , Ken Nakao
IPC分类号： H05B3/06
CPC分类号： H01L21/67109 , F27B17/0025 , F27D11/02 , F27D99/0006 , H05B3/08
摘要： A thermal processing furnace comprises: a tubular heat insulation member 4 surrounding a processing vessel 3 for receiving and thermally processing an object to be processed w; a heating resistor 5 helically arranged on an inner circumferential surface of the heat insulation member 4; and a support member 13 disposed on the inner circumferential surface of the heat insulation member 4, the support member 13 supporting the heating resistor 5 such that the heating resistor 5 can be thermally expanded and thermally shrunk. The thermal processing furnace further comprises: a movement prevention member 15 disposed on the heating resistor 5 to be in contact with one side surface of the support member 13 so as to prevent a downward movement of the heating resistor 5.
摘要翻译：热处理炉包括：围绕处理容器3的管状隔热构件4，用于接收和热处理待加工物体w; 螺旋形地布置在隔热构件4的内周面上的加热电阻器5; 以及设置在绝热构件4的内周面上的支撑构件13，支撑构件13，其支撑加热电阻器5，使得加热电阻器5可以热膨胀和热收缩。热处理炉还包括：移动防止部件15，设置在加热电阻器5上以与支撑部件13的一个侧表面接触，以防止加热电阻器5的向下移动。

7. 发明申请

US20080073334A1 Heat-processing furnace and manufacuring method thereof 有权
标题翻译：热处理炉及其制造方法
公开(公告)号：US20080073334A1
公开(公告)日：2008-03-27
申请号：US11902333
申请日：2007-09-20
申请人： Ken Nakao , Kenichi Yamaga , Makoto Kobayashi
发明人： Ken Nakao , Kenichi Yamaga , Makoto Kobayashi
IPC分类号： F27D11/02 , H05B3/06
CPC分类号： F27B17/0025 , H01L21/67103 , H05B3/08 , Y10T29/49083
摘要： A heat-processing furnace comprises: a processing vessel for housing an object to be processed to thermally heat the object to be processed; a cylindrical heat insulating member surrounding the processing vessel; a helical heating resistor disposed along an inner circumferential surface of the heat insulating member; and support members axially disposed on the inner circumferential surface of the heat insulating member, for supporting the heating resistor at predetermined pitches. A plurality of terminal plates are disposed outside the heating resistor at suitable intervals therebetween and attached to the heating resistor, the terminal plates radially passing through the heat insulating member to be extended outside. A plurality of fixing plates are disposed outside the heating resistor at suitable intervals therebetween and attached to the heating resistor, the fixing plates being fixed in the heat insulating member. The fixing plates are attached to the heating resistor by the same attachment structure as the attachment structure of the terminal plates to the heating resistor.
摘要翻译：一种热处理炉包括：用于容纳待加工物体的热处理容器，用于对被处理物体进行热加热; 围绕所述处理容器的圆柱形绝热构件; 螺旋加热电阻器，沿着所述绝热构件的内周面设置; 以及轴向设置在绝热构件的内周面上的支撑构件，用于以预定间距支撑加热电阻器。多个端子板以适当的间隔设置在加热电阻器的外侧，并且附接到加热电阻器，端子板径向通过隔热构件延伸到外部。多个固定板以适当的间隔设置在加热电阻器的外部，并附着在加热电阻器上，固定板固定在绝热构件中。固定板通过与端子板与加热电阻器的连接结构相同的附接结构附接到加热电阻器。

8. 发明申请

US20060032072A1 Single-wafer type heat treatment apparatus for semiconductor processing system 失效
公开(公告)号：US20060032072A1
公开(公告)日：2006-02-16
申请号：US10529417
申请日：2004-05-26
申请人： Kenichi Yamaga , Ken Nakao
发明人： Kenichi Yamaga , Ken Nakao
IPC分类号： F26B21/06 , F26B25/06
CPC分类号： H01L21/67109
摘要： A single-substrate heat-processing apparatus (2) for a semiconductor processing system includes a process container (4) configured to accommodate a target substrate (W). A support member (6) is disposed in the process container (4) and configured to support the target substrate (W) substantially in a horizontal state, while a bottom surface of the target substrate is exposed. A heating gas supply section (20) is disposed to generate a heating gas and supply the heating gas toward the bottom surface of the target substrate (W). A distribution member (16) is disposed within a flow passage of the heating gas supplied from the heating gas supply section (20), and configured to improve distribution uniformity of the heating gas onto the bottom surface of the target substrate (W).

9. 发明授权

US07150628B2 Single-wafer type heat treatment apparatus for semiconductor processing system 失效
标题翻译：用于半导体处理系统的单晶片型热处理装置
公开(公告)号：US07150628B2
公开(公告)日：2006-12-19
申请号：US10529417
申请日：2004-05-26
申请人： Kenichi Yamaga , Ken Nakao
发明人： Kenichi Yamaga , Ken Nakao
IPC分类号： F27D5/00
CPC分类号： H01L21/67109
摘要： A single-substrate heat-processing apparatus (2) for a semiconductor processing system includes a process container (4) configured to accommodate a target substrate (W). A support member (6) is disposed in the process container (4) and configured to support the target substrate (W) substantially in a horizontal state, while a bottom surface of the target substrate is exposed. A heating gas supply section (20) is disposed to generate a heating gas and supply the heating gas toward the bottom surface of the target substrate (W). A distribution member (16) is disposed within a flow passage of the heating gas supplied from the heating gas supply section (20), and configured to improve distribution uniformity of the heating gas onto the bottom surface of the target substrate (W).
摘要翻译：用于半导体处理系统的单衬底加热处理设备（2）包括被配置为容纳目标衬底（W）的处理容器（4）。支撑构件（6）设置在处理容器（4）中，并且构造成在目标基板的底表面露出时基本上以水平状态支撑目标基板（W）。设置加热气体供给部（20），以产生加热气体，并向加热气体的底面（W）供给加热气体。分配构件（16）设置在从加热气体供给部（20）供给的加热气体的流路内，构成为提高加热气体在目标基板（W）的底面上的分布均匀性。

10. 发明授权

US08476560B2 Thermal processing furnace 有权
公开(公告)号：US08476560B2
公开(公告)日：2013-07-02
申请号：US12320433
申请日：2009-01-26
申请人： Makoto Kobayashi , Kenichi Yamaga , Ken Nakao
发明人： Makoto Kobayashi , Kenichi Yamaga , Ken Nakao
IPC分类号： F27B5/14 , F27D11/02 , H05B3/66
CPC分类号： H01L21/67109 , F27B17/0025 , F27D11/02 , F27D99/0006 , H05B3/08
摘要： A thermal processing furnace comprises: a tubular heat insulation member 4 surrounding a processing vessel 3 for receiving and thermally processing an object to be processed w; a heating resistor 5 helically arranged on an inner circumferential surface of the heat insulation member 4; and a support member 13 disposed on the inner circumferential surface of the heat insulation member 4, the support member 13 supporting the heating resistor 5 such that the heating resistor 5 can be thermally expanded and thermally shrunk. The thermal processing furnace further comprises: a movement prevention member 15 disposed on the heating resistor 5 to be in contact with one side surface of the support member 13 so as to prevent a downward movement of the heating resistor 5.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式