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1. 发明授权

US07807587B2 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US07807587B2
公开(公告)日：2010-10-05
申请号：US12083342
申请日：2006-10-06
申请人： Hiroyuki Matsuura , Ken Nakao
发明人： Hiroyuki Matsuura , Ken Nakao
IPC分类号： H01L21/00
CPC分类号： H01L21/67303 , C23C16/45525 , C23C16/45546 , C23C16/45578 , C23C16/45591 , C23C16/4584 , F27B17/0025 , H01L21/67109
摘要： The present invention is a substrate processing apparatus including: a holder that holds substrates in a tier-like manner; a processing container that contains the holder and that conducts a predetermined thermal process to the substrates in a process-gas atmosphere under a predetermined temperature and pressure; a gas-introducing part that introduces a process gas into the processing container; a gas-discharging part that discharges a gas from the processing container to create a predetermined vacuum pressure therein; and a heating part that heats the processing container; wherein the holder is provided with baffle plates each of which forms a processing space for each substrate when the holder is contained in the processing container; the gas-introducing part is provided with gas introduction holes disposed at one lateral side of the respective processing spaces; and the gas-discharging part is provided with gas discharge holes disposed at the other lateral side of the respective processing spaces, oppositely to the gas introduction holes.
摘要翻译：本发明是一种基板处理装置，其特征在于，包括：以层状保持基板的保持架; 处理容器，其包含所述保持器，并且在预定温度和压力下在处理气体气氛中对所述基板进行预定的热处理; 气体导入部，其将处理气体引入到处理容器中; 气体排出部，其从所述处理容器排出气体，以在其中产生预定的真空压力; 以及加热部，其对加工容器进行加热; 其中，所述保持器设置有挡板，当所述保持器容纳在所述处理容器中时，所述挡板形成每个基板的处理空间; 气体导入部设置有设置在各个处理空间的一个侧面的气体导入孔; 并且气体排出部设置有与各个处理空间的与气体导入孔相反的另一侧的侧面的排气孔。

2. 发明申请

US20090305512A1 Substrate Processing Apparatus and Substrate Processing Method 有权
标题翻译：基板加工装置及基板加工方法
公开(公告)号：US20090305512A1
公开(公告)日：2009-12-10
申请号：US12083342
申请日：2006-10-06
申请人： Hiroyuki Matsuura , Ken Nakao
发明人： Hiroyuki Matsuura , Ken Nakao
IPC分类号： H01L21/465 , C23C16/44
CPC分类号： H01L21/67303 , C23C16/45525 , C23C16/45546 , C23C16/45578 , C23C16/45591 , C23C16/4584 , F27B17/0025 , H01L21/67109
摘要： The present invention is a substrate processing apparatus including: a holder that holds substrates in a tier-like manner; a processing container that contains the holder and that conducts a predetermined thermal process to the substrates in a process-gas atmosphere under a predetermined temperature and pressure; a gas-introducing part that introduces a process gas into the processing container; a gas-discharging part that discharges a gas from the processing container to create a predetermined vacuum pressure therein; and a heating part that heats the processing container; wherein the holder is provided with baffle plates each of which forms a processing space for each substrate when the holder is contained in the processing container; the gas-introducing part is provided with gas introduction holes disposed at one lateral side of the respective processing spaces; and the gas-discharging part is provided with gas discharge holes disposed at the other lateral side of the respective processing spaces, oppositely to the gas introduction holes.
摘要翻译：本发明是一种基板处理装置，其特征在于，包括：以层状保持基板的保持架; 处理容器，其包含所述保持器，并且在预定温度和压力下在处理气体气氛中对所述基板进行预定的热处理; 气体导入部，其将处理气体引入到处理容器中; 气体排出部，其从所述处理容器排出气体，以在其中产生预定的真空压力; 以及加热部，其对加工容器进行加热; 其中，所述保持器设置有挡板，当所述保持器容纳在所述处理容器中时，所述挡板形成每个基板的处理空间; 气体导入部设置有设置在各个处理空间的一个侧面的气体导入孔; 并且气体排出部设置有与各个处理空间的与气体导入孔相反的另一侧的侧面的排气孔。

3. 发明授权

US09105672B2 Heat treatment apparatus 有权
标题翻译：热处理设备
公开(公告)号：US09105672B2
公开(公告)日：2015-08-11
申请号：US13561373
申请日：2012-07-30
申请人： Hiroyuki Matsuura
发明人： Hiroyuki Matsuura
IPC分类号： F27D3/12 , H01L21/67 , F27B17/00 , H01L21/677
CPC分类号： H01L21/67109 , F27B17/0025 , H01L21/6719 , H01L21/67757
摘要： A heat treatment apparatus for performing heat treatment of processing objects at a time without changing the interior configuration of a conventional clean room even when the processing objects are large-sized. The heat treatment apparatus is installed in a clean room. The heat treatment apparatus includes: a heat treatment furnace including a vertical processing chamber having a furnace opening at the top and adapted to house and heat-treat processing objects, a heat insulator that surrounds the circumference of the processing chamber, and a heater provided on the inner peripheral surface of the heat insulator; a lid for closing the furnace opening of the processing chamber; and a holding tool, hung via a heat-retaining cylinder from the lid, for holding the processing objects in multiple stages. The heat treatment furnace of the heat treatment apparatus, for the most part in the height direction, lies beneath the floor of the clean room.
摘要翻译：即使在处理对象大的情况下，也能一次进行处理对象的热处理而不改变现有的洁净室的内部结构的热处理装置。热处理装置安装在洁净室内。该热处理设备包括：热处理炉，其包括垂直处理室，其具有在顶部具有炉开口并适于容纳和热处理物体的垂直处理室，围绕处理室周围的隔热件和设置在该处理室周围的加热器绝热体的内周面; 用于关闭处理室的炉开口的盖子; 以及通过来自盖的保温筒悬挂的用于将处理对象保持多级的保持工具。热处理设备的热处理炉大部分位于高度方向，位于洁净室的地板下面。

4. 发明授权

US08947776B2 Suction apparatus, semiconductor device observation device, and semiconductor device observation method 有权
标题翻译：抽吸装置，半导体装置观察装置和半导体装置观察方法
公开(公告)号：US08947776B2
公开(公告)日：2015-02-03
申请号：US13701035
申请日：2011-06-21
申请人： Hirotoshi Terada , Hiroyuki Matsuura
发明人： Hirotoshi Terada , Hiroyuki Matsuura
IPC分类号： G02B21/26 , G01N21/95 , H01L21/683 , H01L21/687 , G01N21/01 , H01L21/66
CPC分类号： G01N21/9501 , G01N21/01 , H01L21/6838 , H01L21/68757 , H01L21/68785 , H01L22/12
摘要： A suction unit 10 includes a main body portion having a first surface 13 on which a semiconductor wafer W is arranged and a second surface 14 opposite to the first surface 13, and in which a through-hole 15 that penetrates through the first surface 13 and the second surface 14 is formed and a light transmitting portion having a light incident surface 16 and a light emitting surface 17, and which is fitted to the through-hole 15. Further, in the first surface 13, a first suction groove 13a for vacuum sucking the semiconductor wafer W to fix the semiconductor device D to the light incident surface 16 is formed, and in the second surface 14, a second suction groove 14a for vacuum sucking the solid immersion lens S to fix the solid immersion lens S to the light emitting surface 17 is formed.
摘要翻译：抽吸单元10包括主体部分，其具有布置半导体晶片W的第一表面13和与第一表面13相对的第二表面14，并且其中穿过第一表面13的通孔15和形成第二表面14和具有光入射表面16和发光表面17并且安装到通孔15的透光部分。此外，在第一表面13中，具有用于真空的第一吸入槽13a 吸收半导体晶片W以将半导体器件D固定到光入射表面16，并且在第二表面14中，用于真空吸附固体浸没透镜S以将固体浸没透镜S固定到光的第二吸入槽14a 形成发光面17。

5. 发明申请

US20130279080A1 ELECTROLYTIC CAPACITOR AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：电解电容器及其制造方法
公开(公告)号：US20130279080A1
公开(公告)日：2013-10-24
申请号：US13976392
申请日：2012-02-15
申请人： Tatsuji Aoyama , Yuuki Murata , Hiroyuki Matsuura , Hidehiro Sasaki , Kazuyo Saito , Yukiya Shimoyama , Jyunya Kushizaki
发明人： Tatsuji Aoyama , Yuuki Murata , Hiroyuki Matsuura , Hidehiro Sasaki , Kazuyo Saito , Yukiya Shimoyama , Jyunya Kushizaki
IPC分类号： H01G9/00 , H01G9/15
CPC分类号： H01G9/0003 , H01G9/0029 , H01G9/008 , H01G9/04 , H01G9/15 , Y10T29/417
摘要： A capacitor element includes an anode foil, the first oxide film on a surface of the anode foil, a solid electrolyte layer formed using π-conjugated conductive polymer dispersing material on the first oxide film, and a cathode foil on the solid electrolyte layer. The cathode foil faces the first oxide film across the solid electrolyte layer. An electrolytic capacitor includes the capacitor element, an anode terminal connected to the anode foil, and a second oxide film on a surface of the anode terminal. The second oxide film provided on the anode terminal has higher water repellency than the first oxide film provided on the anode foil. This electrolytic capacitor can reduce a leakage current.
摘要翻译：电容器元件包括阳极箔，阳极箔的表面上的第一氧化膜，在第一氧化物膜上使用π共轭导电性聚合物分散材料形成的固体电解质层，以及固体电解质层上的阴极箔。阴极箔面对固体电解质层上的第一氧化膜。电解电容器包括电容器元件，连接到阳极箔的阳极端子和阳极端子的表面上的第二氧化物膜。设置在阳极端子上的第二氧化膜具有比设置在阳极箔上的第一氧化膜更高的拒水性。这种电解电容可以减少漏电流。

6. 发明授权

US08354623B2 Treatment apparatus, treatment method, and storage medium 有权
公开(公告)号：US08354623B2
公开(公告)日：2013-01-15
申请号：US12314082
申请日：2008-12-03
申请人： Hiroyuki Matsuura
发明人： Hiroyuki Matsuura
IPC分类号： H05B6/10 , F27B5/14 , F27D5/00 , H01L21/205 , C23C16/46
CPC分类号： H01L21/67109 , C23C16/4581 , C23C16/46
摘要： A treatment apparatus uses an inductive heating method to allow an object to be heated while preventing a treatment chamber from being heated. The treatment apparatus for performing a heat treatment on the object has a treatment chamber and an induction heating coil section. The treatment chamber is capable of accommodating a plurality of objects. The induction heating coil section is wound around an outer circumference of the treatment chamber. The treatment apparatus also has a high frequency power supply and a gas supply unit. The high frequency power supply applies high frequency power to the induction heating coil section. The gas supply unit introduces a necessary gas to the treatment chamber. A holding unit is inserted in and removed from the treatment chamber under the condition that the holding unit holds the object and an induction heating generator adapted to be inductively heated by means of a high frequency wave emitted by the induction heating coil section.

7. 发明授权

US08336490B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08336490B2
公开(公告)日：2012-12-25
申请号：US13339149
申请日：2011-12-28
申请人： Hiroyuki Matsuura , Toshiki Takahashi , Kohei Fukushima
发明人： Hiroyuki Matsuura , Toshiki Takahashi , Kohei Fukushima
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H05B31/26
CPC分类号： H01J37/32532 , C23C16/345 , C23C16/452 , H01J37/321
摘要： A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field to form a plasma generation area airtightly communicating with the process field, an ICP electrode provided to the plasma generation box, and an RF power supply connected to the electrode.
摘要翻译：一次在一起对多个目标物体进行等离子体处理的垂直等离子体处理装置包括将处理气体转换为等离子体的启动机构。激活机构包括垂直延长的等离子体生成箱，其在对应于处理场的位置处附接到处理容器，以形成与过程场气密地连通的等离子体产生区域，提供给等离子体生成箱的ICP电极和RF功率电源连接到电极。

8. 发明授权

US08121735B2 Control device 有权
标题翻译：控制装置
公开(公告)号：US08121735B2
公开(公告)日：2012-02-21
申请号：US12306084
申请日：2007-07-02
申请人： Hirotaka Saruwatari , Hiroyuki Matsuura , Mario Hayashi
发明人： Hirotaka Saruwatari , Hiroyuki Matsuura , Mario Hayashi
IPC分类号： G06F19/00
CPC分类号： F24F11/30 , F24F11/54 , F24F2110/12
摘要： A control device is configured to control an air conditioner that includes an air conditioner outdoor unit and an air conditioner indoor unit. The control device includes a microcomputer and a storage element. The microcomputer causes a signal to be transmitted and received between an outdoor communication unit of the air conditioner outdoor unit and an indoor communication unit of the air conditioner indoor unit. The storage element stores specific information in response to command from the microcomputer. The microcomputer causes the storage element to store operation information including a state of transmission and reception of the signal of the air conditioner at a constant time interval.
摘要翻译：控制装置被配置为控制包括空调室外单元和空调室内单元的空调。控制装置包括微型计算机和存储元件。微型计算机使得在空调室外机的室外通信单元和空调室内机的室内通信单元之间传输和接收信号。存储元件响应于来自微型计算机的命令存储特定信息。微型计算机使存储元件以恒定的时间间隔存储包括空调的信号的发送和接收的状态的操作信息。

9. 外观设计

USD652148S1 Container 有权
公开(公告)号：USD652148S1
公开(公告)日：2012-01-10
申请号：US29387844
申请日：2011-03-18
申请人： Hiroyuki Matsuura
设计人： Hiroyuki Matsuura

10. 发明授权

US07860408B2 Interferometer for demodulating differential M-phase shift keying signal 失效
标题翻译：用于解调差分M相移键控信号的干涉仪
公开(公告)号：US07860408B2
公开(公告)日：2010-12-28
申请号：US11651591
申请日：2007-01-10
申请人： Akihiko Isomura , Jens Rasmussen , Takafumi Terahara , Kentaro Nakamura , Takeshi Hoshida , George Ishikawa , Hiroshi Onaka , Morio Wada , Hiroyuki Matsuura , Akira Miura , Yasuyuki Suzuki , Hideaki Arai , Satoshi Takasugi
发明人： Akihiko Isomura , Jens Rasmussen , Takafumi Terahara , Kentaro Nakamura , Takeshi Hoshida , George Ishikawa , Hiroshi Onaka , Morio Wada , Hiroyuki Matsuura , Akira Miura , Yasuyuki Suzuki , Hideaki Arai , Satoshi Takasugi
IPC分类号： H04B10/06
CPC分类号： G02F1/225 , G02F2203/21 , H04L1/0047 , H04L27/223
摘要： An interferometer for demodulating a differential M-phase shift keying signal includes a PLC type interferometer main body, a heating portion that heats the PLC type interferometer main body, and an intermediate member having a higher stiffness than that of the PLC type interferometer main body, for bonding the PLC type interferometer main body and the heating portion with each other while being sandwiched therebetween. A linear expansion coefficient difference between the PLC type interferometer main body and the intermediate member is equal to or smaller than 4.5×10−6/° C., and a thermal conductivity difference between the PLC type interferometer main body and the intermediate member is equal to or larger than 10 W/mK. A phase of an optical signal flowing through the interferometer is adjusted by using the heating portion and a second heating portion.
摘要翻译：用于解调差分M相移键控信号的干涉仪包括PLC型干涉仪主体，加热PLC型干涉仪主体的加热部分和具有比PLC型干涉仪主体更高刚度的中间部件，用于将PLC型干涉仪主体和加热部分夹在两者之间彼此粘合。 PLC型干涉仪主体与中间构件之间的线膨胀系数差等于或小于4.5×10-6 /℃，PLC型干涉仪主体与中间构件之间的热导率差相等至10W / mK以上。通过使用加热部和第二加热部来调节流过干涉仪的光信号的相位。

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