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1. 发明申请

US20080251018A1 GAS SUPPLY SYSTEM FOR SEMICONDUCTOR MANUFACTURING APPARATUS 有权
标题翻译：用于半导体制造设备的气体供应系统
公开(公告)号：US20080251018A1
公开(公告)日：2008-10-16
申请号：US12061982
申请日：2008-04-03
申请人： Shuji MORIYA , Ken Nakao
发明人： Shuji MORIYA , Ken Nakao
IPC分类号： C23C16/00
CPC分类号： C23C16/4402 , C23C14/564 , Y10S55/15
摘要： A gas supply system according to the present invention comprises a gas filter disposed in a gas supply flow passage through which a gas is supplied to a semiconductor manufacturing apparatus and a metal component remover disposed in the gas supply flow passage downstream relative to the gas filter, which removes a volatile metal component contained in the gas flowing through the gas supply flow passage by liquefying the volatile metal component. The structure adopted in the gas supply system prevents entry of the volatile metal component, which cannot be eliminated through the gas filter, into the semiconductor manufacturing apparatus as the corrosive gas is supplied thereto by the gas supply flow passage.
摘要翻译：根据本发明的气体供给系统包括：气体过滤器，设置在气体供给流路中，通过该气体供给流路将气体供给到半导体制造装置，并且配置在气体供给流路中的金属成分去除器相对于气体过滤器下游，其通过液化挥发性金属成分除去流过气体供给流路的气体中所含的挥发性金属成分。气体供给系统中采用的结构防止了由气体供给流路供给腐蚀性气体而将不能通过气体过滤器排出的挥发性金属成分进入半导体制造装置。

2. 发明授权

US07862638B2 Gas supply system for semiconductor manufacturing apparatus 有权
标题翻译：半导体制造装置用气体供给系统
公开(公告)号：US07862638B2
公开(公告)日：2011-01-04
申请号：US12061982
申请日：2008-04-03
申请人： Shuji Moriya , Ken Nakao
发明人： Shuji Moriya , Ken Nakao
IPC分类号： B01D46/00 , H01L21/205
CPC分类号： C23C16/4402 , C23C14/564 , Y10S55/15
摘要： A gas supply system according to the present invention comprises a gas filter disposed in a gas supply flow passage through which a gas is supplied to a semiconductor manufacturing apparatus and a metal component remover disposed in the gas supply flow passage downstream relative to the gas filter, which removes a volatile metal component contained in the gas flowing through the gas supply flow passage by liquefying the volatile metal component. The structure adopted in the gas supply system prevents entry of the volatile metal component, which cannot be eliminated through the gas filter, into the semiconductor manufacturing apparatus as the corrosive gas is supplied thereto by the gas supply flow passage.
摘要翻译：根据本发明的气体供给系统包括：气体过滤器，设置在气体供给流路中，通过该气体供给流路将气体供给到半导体制造装置，并且配置在气体供给流路中的金属成分去除器相对于气体过滤器下游，其通过液化挥发性金属成分除去流过气体供给流路的气体中所含的挥发性金属成分。气体供给系统中采用的结构防止了由气体供给流路供给腐蚀性气体而将不能通过气体过滤器排出的挥发性金属成分进入半导体制造装置。

3. 发明申请

US20090246542A1 PLASMA PROCESS APPARATUS, PLASMA PROCESS METHOD, AND OBJECT PROCESSED BY THE PLASMA PROCESS METHOD 审中-公开
标题翻译：等离子体处理装置，等离子体处理方法和等离子体处理方法的对象
公开(公告)号：US20090246542A1
公开(公告)日：2009-10-01
申请号：US12410492
申请日：2009-03-25
申请人： Ken Nakao , Shuji Moriya , Hiroyuki Kousaka
发明人： Ken Nakao , Shuji Moriya , Hiroyuki Kousaka
IPC分类号： B32B15/04 , C23C16/513
CPC分类号： H05H1/46 , H05H2001/4622 , H05H2240/10 , H05H2245/123 , Y10T428/31678
摘要： A disclosed plasma process apparatus includes an electromagnetic wave generator that generates electromagnetic waves; a vacuum vessel configured to be hermetically connected with an object to be processed, and evacuated to reduced pressures along with the object to be processed hermetically connected to the vacuum vessel; an electromagnetic wave guiding portion configured to guide the electromagnetic waves generated by the electromagnetic wave generator so that plasma is ignited in the vacuum vessel; a gas supplying portion configured to supply a process gas to the object to be processed hermetically connected to the vacuum vessel; an evacuation portion configured to evacuate the object to be processed hermetically connected to the vacuum vessel; and a voltage source configured to apply a predetermined voltage to the object to be processed hermetically connected to the vacuum vessel so that the plasma ignited in the vacuum vessel is guided to the object to be processed.
摘要翻译：所公开的等离子体处理装置包括产生电磁波的电磁波发生器; 真空容器，其构造成与待处理物体气密连接，并与被加工物体一起被抽空到与真空容器密封连接的被处理物体上; 电磁波引导部，被配置为引导由电磁波发生器产生的电磁波，使得等离子体在真空容器中点燃; 气体供给部构造成将处理气体供给到与真空容器密封连接的待加工对象物; 排气部，其构造成对与所述真空容器密封连接的待加工物体进行抽真空; 以及电压源，其构造成对与所述真空容器进行气密连接的待加工对象施加预定电压，使得在所述真空容器中点燃的等离子体被引导到被处理物体。

4. 发明申请

US20080295963A1 Gas supply system and gas supply accumulation unit of semiconductor manufacturing apparatus 审中-公开
标题翻译：半导体制造装置的供气系统和气体供应蓄积单元
公开(公告)号：US20080295963A1
公开(公告)日：2008-12-04
申请号：US12068029
申请日：2008-01-31
申请人： Shuji Moriya , Ken Nakao
发明人： Shuji Moriya , Ken Nakao
IPC分类号： C23F1/08 , C23C16/00 , C23C14/34
CPC分类号： C23C16/4402 , C23C16/4404 , C23C16/45561 , C30B25/14 , C30B31/16 , H01J37/3244 , Y02E60/34
摘要： A gas supply system 200 is a system that supplies a predetermined gas from a gas supply source 210 to a processing part 110 of a semiconductor manufacturing apparatus 100. The gas supply system 200 includes a gas supply passage apparatus 220 that is connected to the gas supply source 210 and the processing part 110. The gas supply passage apparatus 220 is provided with a plurality of fluid controllers (a hand valve 231, a pressure reducing valve 232, a manometer 233, a check valve 234, a first shutoff valve 235, a second shutoff valve 236, a massflow controller 237, and a gas filter 238), and passage structuring members (passage blocks 241 to 249) that are connected to positions between the respective fluid controllers 231 to 238 and form gas passages 221 to 229. The passage structuring members are made of a carbon material. Thus, when a corrosive gas is supplied to the processing part 110, mixture of a metal contaminant into a substrate to be processed W can be prevented as much as possible.
摘要翻译：气体供给系统200是将预定气体从气体供给源210供给到半导体制造装置100的处理部110的系统。气体供给系统200包括气体供给通道装置220，其与气体供给源210和处理部110.气体供给通道装置220设置有多个流体控制器（手动阀231，减压阀232，压力计233，止回阀234，第一截止阀235，第二截止阀236，质量流量控制器237和气体过滤器238）以及与各个流体控制器231至238之间的位置连接并形成气体通道221至229的通道结构构件（通道块241至249）。通道结构构件由碳材料制成。因此，当向处理部110供给腐蚀性气体时，可以尽可能地防止金属污染物混入待处理基板W。

5. 发明申请

US20140174364A1 HEAT TREATMENT DEVICE 审中-公开
标题翻译：热处理装置
公开(公告)号：US20140174364A1
公开(公告)日：2014-06-26
申请号：US14236955
申请日：2012-07-23
申请人： Ken Nakao , Eisuke Morisaki
发明人： Ken Nakao , Eisuke Morisaki
IPC分类号： C23C16/46
CPC分类号： C23C16/46 , C23C16/4588 , H01L21/67109 , H01L21/67115
摘要： A heat treatment device includes: a processing container that accommodates a plurality of substrates to be subjected to heat treatment; a substrate holding member that holds the plurality of substrates; an induction heating coil that forms an induction magnetic field inside the processing container; a high frequency power supply that applies a high frequency electric power to the induction heating coil; a gas supply mechanism that supplies a processing gas to the inside of the processing container; an exhaust mechanism that exhausts the inside of the processing container; and an induction heating element provided between the induction heating coil and the substrate holding member to enclose the substrate holding member inside the treatment container. The induction heating element is heated by an induction electric current formed by the induction magnetic field, and the substrates are heated by radiation heat from the induction heating element. The flow of the inductive electric current to the substrate is blocked by the induction heating element.
摘要翻译：热处理装置包括：容纳要进行热处理的多个基板的处理容器; 保持所述多个基板的基板保持部件; 感应加热线圈，其在处理容器内部形成感应磁场; 向感应加热线圈施加高频电力的高频电源; 气体供给机构，其向处理容器的内部供给处理气体; 排出处理容器内部的排气机构; 以及感应加热元件，其设置在所述感应加热线圈和所述基板保持部件之间，以将所述基板保持部件包围在所述处理容器内。感应加热元件由感应磁场形成的感应电流加热，并且基板被来自感应加热元件的辐射热加热。感应电流流向基板被感应加热元件阻挡。

6. 发明申请

US20080105194A1 Gas supply system, gas supply method, method of cleaning thin film forming apparatus, thin film forming method and thin film forming apparatus 审中-公开
标题翻译：气体供给系统，气体供给方法，清洗薄膜形成装置的方法，薄膜形成方法和薄膜形成装置
公开(公告)号：US20080105194A1
公开(公告)日：2008-05-08
申请号：US11907409
申请日：2007-10-11
申请人： Ken Nakao , Hitoshi Kato , Tsuneyuki Okabe , Mitsuhiro Okada , Manabu Honma , Tomoki Haneishi
发明人： Ken Nakao , Hitoshi Kato , Tsuneyuki Okabe , Mitsuhiro Okada , Manabu Honma , Tomoki Haneishi
IPC分类号： C23C22/00 , C23C16/455 , B08B9/027
CPC分类号： C23C16/4405 , B08B7/00 , B08B9/00 , B08B9/027 , C23C16/455
摘要： A thin film forming apparatus 1 comprises a reaction chamber 2, and an exhaust pipe 5 connected with the reaction chamber 2. A fluorine introducing pipe 17c and a hydrogen introducing pipe 17d are connected with the reaction chamber 2, in order to supply a cleaning gas containing fluorine gas and hydrogen gas into the reaction chamber 2 or into the exhaust pipe 5. The hydrogen introducing pipe 17d includes an inner fluid passage 174 and an outer fluid passage 175 formed to cover around the inner fluid passage 174. The hydrogen gas is supplied through the inner fluid passage 174, while nitrogen gas is supplied through the outer fluid passage 175. Thus, the hydrogen gas to be fed through the inner fluid passage can be supplied from the hydrogen introducing pipe 17d, while being covered with the nitrogen gas.
摘要翻译：薄膜形成装置1包括反应室2和与反应室2连接的排气管5。将氟导入管17c和氢引入管17d与反应室2连接，以将含有氟气和氢气的清洁气体供应到反应室2或排气管5中。氢引入管17d包括形成为覆盖内部流体通道174周围的内部流体通道174和外部流体通道175。通过内部流体通道174供应氢气，同时通过外部流体通道175供应氮气。因此，能够从氢气导入管17d供给通过内部流路的氢气被氮气覆盖。

7. 发明申请

US20060021582A1 Heat treatment apparatus 有权
标题翻译：热处理设备
公开(公告)号：US20060021582A1
公开(公告)日：2006-02-02
申请号：US10528704
申请日：2003-08-29
申请人： Takanori Saito , Kenichi Yamaga , Ken Nakao
发明人： Takanori Saito , Kenichi Yamaga , Ken Nakao
IPC分类号： C23C16/00
CPC分类号： H01L21/67109
摘要： The present invention is a thermal processing unit including: a heating-furnace body whose upper end has an opening; a reaction tube consisting of a single tube contained in the heating-furnace body; a gas-discharging-unit connecting portion formed at an upper portion of the reaction tube, the gas-discharging-unit connecting portion having a narrow diameter; a substrate-to-be-processed supporting member for supporting a substrate to be processed, contained in the heating-furnace body; and a heating unit for heating the substrate to be processed supported by the substrate-to-be-processed supporting member. The heating unit has: a first heating portion arranged around the reaction tube, a second heating portion arranged around the gas-discharging-unit connecting portion, a third heating portion arranged around an upper portion of the reaction tube, a fourth heating portion arranged around a lower portion of the reaction tube, and a fifth heating portion arranged under the substrate-to-be-processed supporting member.
摘要翻译：本发明是一种热处理单元，包括：上端具有开口的加热炉体; 由包含在加热炉体内的单个管构成的反应管; 气体排出单元连接部，形成在反应管的上部，气体排出单元连接部具有窄直径; 用于支撑加热炉体内所包含的待处理基板的待处理基板的支撑部件; 以及加热单元，用于加热由要处理的基板支撑构件支撑的待处理基板。所述加热单元具有：设置在所述反应管周围的第一加热部，配置在所述排气单元连接部周围的第二加热部，配置在所述反应管的上部的第三加热部，反应管的下部，以及配置在被处理基板的支撑部件的下方的第五加热部。

8. 发明申请

US20050246918A1 Dry air-supplying apparatus and treating apparatus 失效
标题翻译：干燥供气装置和处理装置
公开(公告)号：US20050246918A1
公开(公告)日：2005-11-10
申请号：US10528230
申请日：2003-09-19
申请人： Takashi Tanahashi , Takanobu Asano , Ken Nakao , Katsuhiro Yamashita
发明人： Takashi Tanahashi , Takanobu Asano , Ken Nakao , Katsuhiro Yamashita
IPC分类号： B01D53/06 , B01D53/26 , F24F3/14 , F26B21/06 , F26B3/00
CPC分类号： F24F3/1423 , B01D53/06 , B01D53/261 , B01D2253/108 , B01D2253/25 , B01D2253/3425 , B01D2257/70 , B01D2257/80 , B01D2259/40007 , B01D2259/40052 , B01D2259/4009 , F24F2203/1032 , F24F2203/1056 , F24F2203/1072 , F24F2203/1084 , F24F2203/1088 , F24F2203/1096
摘要： Two rotors 18a, 18b each housing a honeycomb structure 25 carrying an absorbent is driven for rotation by a common motor 19. Partitioning members 17 define an absorbing zone S and a recovery zone U in the rotor depending on the angular positional relationship between the partitioning members 17 and the rotor corresponding thereto. In the absorbing zone S, the absorbent removes moisture and organic matters from air passing therethrough. In the recovery zone U, recovery of the absorbent deteriorated by absorbing the moisture and the organic matters is preformed by using heated dry air. Air sucked from a transfer space 10 of the processing system sequentially passes through the absorbing zones of both the rotors via a circulation passage 20, thereafter returned to the transfer space. A part of clean dry air having passed through the absorbing zones of both the rotors is supplied into an exhaust passage 21, and is heated by a heater, and passes through the recovery zones of both the rotors.
摘要翻译：每个容纳携带吸收剂的蜂窝结构25的两个转子18a，18b被驱动以便由公共电动机19旋转。分隔构件17根据分隔构件17和与其对应的转子之间的角度位置关系来限定转子中的吸收区域S和恢复区域U. 在吸收区S中，吸收剂从通过其的空气中除去水分和有机物质。在回收区U中，通过吸收水分和有机物而劣化的吸收剂的回收通过使用加热的干燥空气来预处理。从处理系统的传送空间10吸入的空气经由循环通道20依次通过两个转子的吸收区，然后返回到传送空间。已经通过两个转子的吸收区的清洁干燥空气的一部分被供给到排气通道21中，并被加热器加热，并且通过两个转子的回收区。

9. 发明申请

US20050133494A1 Carbon wire heating object sealing heater and fluid heating apparatus using the same heater 有权
标题翻译：碳丝加热对象密封加热器和使用相同加热器的流体加热装置
公开(公告)号：US20050133494A1
公开(公告)日：2005-06-23
申请号：US11038283
申请日：2005-01-21
申请人： Norihiko Saito , Hiroyuki Honma , Hiroshi Mori , Eiichi Toya , Tomio Konn , Tomohiro Nagata , Sunao Seko , Akira Otsu , Takanori Saito , Ken Nakao , Kazutoshi Miura , Harunari Hasegawa , George Hoshi , Katsutoshi Ishi
发明人： Norihiko Saito , Hiroyuki Honma , Hiroshi Mori , Eiichi Toya , Tomio Konn , Tomohiro Nagata , Sunao Seko , Akira Otsu , Takanori Saito , Ken Nakao , Kazutoshi Miura , Harunari Hasegawa , George Hoshi , Katsutoshi Ishi
IPC分类号： H01L23/34 , H05B3/14 , H05B3/34
CPC分类号： H05B3/145 , H01L2924/0002 , H01L2924/00
摘要： A carbon wire heating element sealing heater is provided. Therein, a carbon wire heating element using carbon fibers is sealed in a quartz glass member, wherein absorption water quantity of the carbon wire heating element is 2×10−3 g/cm3 or less.
摘要翻译：提供碳丝加热元件密封加热器。其中，使用碳纤维的碳丝加热元件密封在石英玻璃构件中，其中碳线加热元件的吸收水量为2×10 -3 / cm 3 或更少。

10. 发明授权

US06584279B2 Heater sealed with carbon wire heating element 有权
标题翻译：加热器用碳丝加热元件密封
公开(公告)号：US06584279B2
公开(公告)日：2003-06-24
申请号：US09864196
申请日：2001-05-25
申请人： Sunao Seko , Tomio Konn , Tomohiro Nagata , Norihiko Saito , Hideyuki Yokoyama , Masakazu Kobayashi , Takanori Saito , Ken Nakao
发明人： Sunao Seko , Tomio Konn , Tomohiro Nagata , Norihiko Saito , Hideyuki Yokoyama , Masakazu Kobayashi , Takanori Saito , Ken Nakao
IPC分类号： F26B330
CPC分类号： H01L21/67103 , H01L2924/0002 , H05B3/145 , H01L2924/00
摘要： A heater sealed with carbon wire heating element has a carbon wire heating element sealed with a quartz glass member, the carbon wire being prepared by knitting carbon single fibers into a knitted cord of a braid, each wire having a crystal structure with a interlayer spacing d (002) thereof being 0.343 or less and crystallite size Lc (002) thereof being 4.0 nm or more.
摘要翻译：用碳丝加热元件密封的加热器具有用石英玻璃构件密封的碳线加热元件，碳线通过将碳单纤维编织成编织物的编织线制成，每根导线具有层间距为d的晶体结构（002）为0.343以下，微晶尺寸Lc（002）为4.0nm以上。

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