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1. 发明申请

US20070176531A1 Phoshor and light-emitting diode 审中-公开
标题翻译： Phoshor和发光二极管
公开(公告)号：US20070176531A1
公开(公告)日：2007-08-02
申请号：US10594010
申请日：2005-03-22
申请人： Hiroyuki Kinoshita , Hiromu Shiomi , Makolo Sasaki , Toshihiko Hayashi , Hiroshi Amano , Satoshi Kamiyama , Motoaki Twaya , Isamu Akasaki
发明人： Hiroyuki Kinoshita , Hiromu Shiomi , Makolo Sasaki , Toshihiko Hayashi , Hiroshi Amano , Satoshi Kamiyama , Motoaki Twaya , Isamu Akasaki
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： C09K11/63 , C09K11/0883 , C09K11/59 , C30B23/00 , C30B29/36 , H01L33/502 , H01L2224/16145 , H01L2224/45144 , H01L2224/48091 , H01L2224/49107 , H01L2224/8592 , H01L2924/00014 , H01L2924/00
摘要： Disclosed is a phosphor which is excited by a long wavelength light source in the ultraviolet region or blue-violet visible region and mainly emits light in violet-blue-yellow-red visible region. Also disclosed is a low-cost light-emitting diode which is easily mounted and excellent in color rendering properties. This light-emitting diode does not have much color change due to radiation angle. A phosphor composed of SiC is characterized in that it is excited by an outside light source for emitting light and doped with N and at least one of B and Al.
摘要翻译：公开了在紫外线区域或蓝紫色可见区域被长波长光源激发的荧光体，主要发出紫 - 蓝 - 黄 - 红 - 红色可见区域的光。还公开了一种易于安装并且显色性优异的低成本发光二极管。该发光二极管由于辐射角度而没有太多的颜色变化。由SiC构成的荧光体的特征在于，其被外部光源激发，发光并掺杂有N和B和Al中的至少一种。

2. 发明授权

US08013343B2 Silicon carbide single crystal, silicon carbide substrate and manufacturing method for silicon carbide single crystal 有权
标题翻译：碳化硅单晶，碳化硅基板和碳化硅单晶的制造方法
公开(公告)号：US08013343B2
公开(公告)日：2011-09-06
申请号：US11258998
申请日：2005-10-27
申请人： Hiromu Shiomi , Hiroyuki Kinoshita
发明人： Hiromu Shiomi , Hiroyuki Kinoshita
IPC分类号： H01L29/36 , C30B23/02 , C01B31/36
CPC分类号： C30B29/36 , C30B23/00 , Y10S438/931
摘要： SiC single crystal that includes a first dopant functioning as an acceptor, and a second dopant functioning as a donor is provided, where the content of the first dopant is no less than 5×1015 atoms/cm3, the content of the second dopant is no less than 5×1015 atoms/cm3, and the content of the first dopant is greater than the content of the second dopant. A manufacturing method for silicon carbide single crystal is provided with the steps of: fabricating a raw material by mixing a metal boride with a material that includes carbon and silicon; vaporizing the raw material; generating a mixed gas that includes carbon, silicon, boron and nitride; and growing silicon carbide single crystal that includes boron and nitrogen on a surface of a seed crystal substrate by re-crystallizing the mixed gas on the surface of the seed crystal substrate.
摘要翻译：提供了包含作为受体发挥作用的第一掺杂剂的SiC单晶和作为供体的第二掺杂剂，其中第一掺杂剂的含量不小于5×1015原子/ cm3，第二掺杂剂的含量不为小于5×1015原子/ cm3，第一掺杂剂的含量大于第二掺杂剂的含量。提供了一种碳化硅单晶的制造方法，其特征在于：通过将金属硼化物与包含碳和硅的材料混合来制造原料; 蒸发原料; 产生包括碳，硅，硼和氮化物的混合气体; 以及通过使晶种基板的表面上的混合气体再结晶，在晶种基板的表面上生长包含硼和氮的碳化硅单晶。

3. 发明申请

US20060091402A1 Silicon carbide single crystal, silicon carbide substrate and manufacturing method for silicon carbide single crystal 有权
标题翻译：碳化硅单晶，碳化硅基板和碳化硅单晶的制造方法
公开(公告)号：US20060091402A1
公开(公告)日：2006-05-04
申请号：US11258998
申请日：2005-10-27
申请人： Hiromu Shiomi , Hiroyuki Kinoshita
发明人： Hiromu Shiomi , Hiroyuki Kinoshita
IPC分类号： H01L31/0312
CPC分类号： C30B29/36 , C30B23/00 , Y10S438/931
摘要： SiC single crystal that includes a first dopant functioning as an acceptor, and a second dopant functioning as a donor is provided, where the content of the first dopant is no less than 5×1015 atoms/cm3, the content of the second dopant is no less than 5×1015 atoms/cm3, and the content of the first dopant is greater than the content of the second dopant. A manufacturing method for silicon carbide single crystal is provided with the steps of: fabricating a raw material by mixing a metal boride with a material that includes carbon and silicon; vaporizing the raw material; generating a mixed gas that includes carbon, silicon, boron and nitride; and growing silicon carbide single crystal that includes boron and nitrogen on a surface of a seed crystal substrate by re-crystallizing the mixed gas on the surface of the seed crystal substrate.
摘要翻译：提供包括用作受体的第一掺杂剂和用作供体的第二掺杂剂的SiC单晶，其中第一掺杂剂的含量不小于5×10 15原子/ 3，第二掺杂剂的含量不小于5×10 15原子/ cm 3，第一掺杂剂的含量大于第二掺杂剂。提供了一种碳化硅单晶的制造方法，其特征在于：通过将金属硼化物与包含碳和硅的材料混合来制造原料; 蒸发原料; 产生包括碳，硅，硼和氮化物的混合气体; 以及通过使晶种基板的表面上的混合气体再结晶，在晶种基板的表面上生长包含硼和氮的碳化硅单晶。

4. 发明授权

US08785301B2 Method of cleaning silicon carbide semiconductor 有权
标题翻译：清洁碳化硅半导体的方法
公开(公告)号：US08785301B2
公开(公告)日：2014-07-22
申请号：US13390869
申请日：2011-02-25
申请人： Keiji Wada , Takeyoshi Masuda , Tomihito Miyazaki , Toru Hiyoshi , Satomi Itoh , Hiromu Shiomi
发明人： Keiji Wada , Takeyoshi Masuda , Tomihito Miyazaki , Toru Hiyoshi , Satomi Itoh , Hiromu Shiomi
IPC分类号： H01L21/322 , H01L21/31
CPC分类号： H01L21/02052 , H01L21/02057 , H01L21/67051 , H01L29/1608 , H01L29/66068 , H01L29/7802
摘要： A method of cleaning a SiC semiconductor includes the steps of forming an oxide film at the surface of a SiC semiconductor, and removing the oxide film. At the step of forming an oxide film, an oxide film is formed using ozone water having a concentration greater than or equal to 30 ppm. The forming step preferably includes the step of heating at least one of the surface of the SiC semiconductor and the ozone water. Thus, there can be obtained a method of cleaning a SiC semiconductor that can exhibit cleaning effect on the SiC semiconductor.
摘要翻译：清洗SiC半导体的方法包括以下步骤：在SiC半导体的表面形成氧化膜，除去氧化物膜。在形成氧化膜的步骤中，使用浓度大于或等于30ppm的臭氧水形成氧化膜。成形步骤优选包括加热SiC半导体的表面和臭氧水中的至少一个的步骤。因此，可以获得能够对SiC半导体具有清洁效果的SiC半导体的清洗方法。

5. 发明申请

US20120119225A1 SILICON CARBIDE SUBSTRATE, EPITAXIAL LAYER PROVIDED SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE 审中-公开
标题翻译：硅碳化硅基板，外延层基板，半导体器件及制造碳化硅基板的方法
公开(公告)号：US20120119225A1
公开(公告)日：2012-05-17
申请号：US13322089
申请日：2011-02-21
申请人： Hiromu Shiomi , Hideto Tamaso , Shin Harada , Takashi Tsuno , Yasuo Namikawa
发明人： Hiromu Shiomi , Hideto Tamaso , Shin Harada , Takashi Tsuno , Yasuo Namikawa
IPC分类号： H01L29/24 , H01L21/20
CPC分类号： H01L29/7802 , H01L21/02378 , H01L21/02447 , H01L21/02529 , H01L21/02631 , H01L21/02658 , H01L21/02664 , H01L21/046 , H01L21/0495 , H01L29/04 , H01L29/1608 , H01L29/6606 , H01L29/66068
摘要： The present invention provides a silicon carbide substrate, an epitaxial layer provided substrate, a semiconductor device, and a method for manufacturing the silicon carbide substrate, each of which achieves reduced on-resistance. The silicon carbide substrate is a silicon carbide substrate having a main surface, and includes: a SiC single-crystal substrate formed in at least a portion of the main surface; and a base member disposed to surround the SiC single-crystal substrate. The base member includes a boundary region and a base region. The boundary region is adjacent to the SiC single-crystal substrate in a direction along the main surface, and has a crystal grain boundary therein. The base region is adjacent to the SiC single-crystal substrate in a direction perpendicular to the main surface, and has an impurity concentration higher than that of the SiC single-crystal substrate.
摘要翻译：本发明提供一种碳化硅衬底，提供衬底的外延层，半导体器件和制造碳化硅衬底的方法，其中每一个都实现了降低的导通电阻。碳化硅衬底是具有主表面的碳化硅衬底，并且包括：形成在主表面的至少一部分中的SiC单晶衬底; 以及设置成围绕SiC单晶衬底的基底构件。基部构件包括边界区域和基底区域。边界区域沿着主表面的方向与SiC单晶基板相邻，并且在其中具有晶界。基极区域在与主表面垂直的方向上与SiC单晶衬底相邻，杂质浓度高于SiC单晶衬底。

6. 发明授权

US06660084B1 Sic single crystal and method for growing the same 有权
标题翻译： Sic单晶和生长方法相同
公开(公告)号：US06660084B1
公开(公告)日：2003-12-09
申请号：US10069503
申请日：2002-02-27
申请人： Hiromu Shiomi , Tsunenobu Kimoto , Hiroyuki Matsunami
发明人： Hiromu Shiomi , Tsunenobu Kimoto , Hiroyuki Matsunami
IPC分类号： C30B2502
CPC分类号： C30B23/00 , C30B23/02 , C30B29/36
摘要： A method of growing a 4H-poly type SiC single crystal 40, characterized in that the 4H-poly type SiC single crystal 40 is grown on a seed crystal 30 comprised of an SiC single crystal where a {03-38} plane 30u or a plane which is inclined at off angle &agr;, within about 10°, with respect to the {03-38} plane, is exposed.
摘要翻译：一种生长4H-多晶型SiC单晶40的方法，其特征在于，4H-多晶型SiC单晶40在由SiC单晶构成的晶种30上生长，其中{03-38}面30u或相对于{03-38}平面倾斜偏角α在约10°内的平面被暴露。

7. 发明授权

US06391109B1 Method of making SiC single crystal and apparatus for making SiC single crystal 有权
公开(公告)号：US06391109B1
公开(公告)日：2002-05-21
申请号：US09750157
申请日：2000-12-29
申请人： Hiromu Shiomi , Shigehiro Nishino
发明人： Hiromu Shiomi , Shigehiro Nishino
IPC分类号： C30B3500
摘要： An apparatus comprises an Si-disposing section in which solid Si is disposed; a seed-crystal-disposing section in which a seed crystal of SiC is disposed; a synthesis vessel adapted to accommodate the Si-disposing section, the seed-crystal-disposing section, and carbon; heating means adapted to heat the Si-disposing section and the seed-crystal-disposing section; and a control section for transmitting to the heating means a command for heating the Si to an evaporation temperature of Si or higher and heating the seed crystal to a temperature higher than that of Si; wherein the Si evaporated by the heating means is adapted to reach the seed-crystal-disposing section.

8. 发明授权

US06270898B1 Tool tip and bonding tool comprising the tool tip and control method for the bonding tool 失效
标题翻译：工具尖和焊接工具，其包括工具尖端和用于接合工具的控制方法
公开(公告)号：US06270898B1
公开(公告)日：2001-08-07
申请号：US09180981
申请日：1998-11-18
申请人： Katsuko Yamamoto , Takahisa Iguchi , Yoshiaki Kumazawa , Katsuyuki Tanaka , Hiromu Shiomi , Takashi Tsuno , Naoji Fujimori
发明人： Katsuko Yamamoto , Takahisa Iguchi , Yoshiaki Kumazawa , Katsuyuki Tanaka , Hiromu Shiomi , Takashi Tsuno , Naoji Fujimori
IPC分类号： H01L2160
CPC分类号： H01L21/67138 , B23K26/382 , B23K26/40 , B23K2101/20 , B23K2101/35 , B23K2103/50 , B23K2103/52 , Y10T428/24355 , Y10T428/24628 , Y10T428/24802 , Y10T428/24917 , Y10T428/24926 , Y10T428/26 , Y10T428/30
摘要： A conductive polycrystalline diamond film having specific resistance of at least 1×10−4 &OHgr;cm and less than 1×103 &OHgr;cm, whose film thickness is in the range of at least 0.1 &mgr;m and not more than 500 &mgr;m, is film-formed by vapor-phase synthesis on a surface employed for pressure bonding, a surface opposite to this surface or at least two side surfaces intersecting with these surfaces on a substrate of a bonding tool tip that is applicable for bonding and packaging a semiconductor chip.
摘要翻译：具有至少1×10 -4欧姆·厘米的电阻率和小于1×10 3欧姆·厘米的导电多晶金刚石膜，其膜厚度在至少0.1μm至不大于500μm的范围内，通过气相合成用于压接的表面，与该表面相对的表面或与适用于接合和封装半导体芯片的接合工具尖端的基板上的这些表面相交的至少两个侧表面。

9. 发明授权

US6132550A Apparatuses for desposition or etching 失效
标题翻译：用于放置或蚀刻的设备
公开(公告)号：US6132550A
公开(公告)日：2000-10-17
申请号：US694457
申请日：1996-08-07
申请人： Hiromu Shiomi
发明人： Hiromu Shiomi
IPC分类号： C23C16/505 , C23C16/511 , H01J37/32 , C23C16/00 , C23C14/00 , C23F1/02 , C25B9/00
CPC分类号： H01J37/32247 , C23C16/505 , C23C16/511 , H01J37/32192 , H01J37/3244
摘要： The apparatus according to the present invention is capable of maintain a plasma at relatively high pressure while preventing a window from being heated or sputtered by the plasma. The reaction chamber includes (1) an entrance window for guiding an electromagnetic wave such as a microwave or an RF to the reaction chamber, (2) a reaction room where film formation or etching for a substrate is performed by exciting a gas with the electromagnetic wave such as the microwave or the RF, and (3) an intermediate room arranged between the reaction room and the entrance window and having a pressure higher than that in the reaction chamber. The gas in the intermediate room is not excited with the electromagnetic wave such as the microwave or the RF.
摘要翻译：根据本发明的装置能够在防止窗口被等离子体加热或溅射的同时将等离子体保持在相对较高的压力。反应室包括（1）用于将电磁波如微波或RF引导到反应室的入口窗口，（2）反应室，其中通过用电磁体激发气体来进行基底的成膜或蚀刻波形如微波或RF，以及（3）设置在反应室和入口窗之间并具有高于反应室中的压力的中间室。中间室内的气体不会受到微波或射频等电磁波的激发。

10. 发明授权

US6007730A Method of manufacturing diamond heat sink 失效
标题翻译：金刚石散热器制造方法
公开(公告)号：US6007730A
公开(公告)日：1999-12-28
申请号：US21546
申请日：1998-02-10
申请人： Hiromu Shiomi , Yoshiaki Kumazawa
发明人： Hiromu Shiomi , Yoshiaki Kumazawa
IPC分类号： C04B41/88 , C04B35/52 , H01L21/48 , H01L23/373 , B44C1/22 , H01L21/3065 , H01L23/34
CPC分类号： H01L21/4871 , H01L21/4878 , H01L23/3732 , H01L2924/0002 , Y10S257/93
摘要： A diamond polycrystal body having metal films on its upper and lower surfaces is cut in the vertical direction using a laser to form a diamond polycrystal body piece having upper and lower surfaces and a cut surface connecting the upper and lower surfaces. The cut surface may be damaged and include graphite resulting from the laser cutting. To remove the damage and the graphite, the cut surface of the diamond polycrystal body piece is then plasma-treated. Thereby a prescribed degree of electrical insulation between the metallized upper and lower surfaces can be ensured.
摘要翻译：使用激光在垂直方向上切割在其上下表面具有金属膜的金刚石多晶体，以形成具有上下表面的金刚石多晶体片和连接上表面和下表面的切割面。切割表面可能被损坏并且包括由激光切割产生的石墨。为了除去损伤和石墨，然后对金刚石多晶体片的切割表面进行等离子体处理。从而可以确保金属化的上表面和下表面之间的规定的电绝缘程度。

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