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1. 发明授权

US06270898B1 Tool tip and bonding tool comprising the tool tip and control method for the bonding tool 失效
标题翻译：工具尖和焊接工具，其包括工具尖端和用于接合工具的控制方法
公开(公告)号：US06270898B1
公开(公告)日：2001-08-07
申请号：US09180981
申请日：1998-11-18
申请人： Katsuko Yamamoto , Takahisa Iguchi , Yoshiaki Kumazawa , Katsuyuki Tanaka , Hiromu Shiomi , Takashi Tsuno , Naoji Fujimori
发明人： Katsuko Yamamoto , Takahisa Iguchi , Yoshiaki Kumazawa , Katsuyuki Tanaka , Hiromu Shiomi , Takashi Tsuno , Naoji Fujimori
IPC分类号： H01L2160
CPC分类号： H01L21/67138 , B23K26/382 , B23K26/40 , B23K2101/20 , B23K2101/35 , B23K2103/50 , B23K2103/52 , Y10T428/24355 , Y10T428/24628 , Y10T428/24802 , Y10T428/24917 , Y10T428/24926 , Y10T428/26 , Y10T428/30
摘要： A conductive polycrystalline diamond film having specific resistance of at least 1×10−4 &OHgr;cm and less than 1×103 &OHgr;cm, whose film thickness is in the range of at least 0.1 &mgr;m and not more than 500 &mgr;m, is film-formed by vapor-phase synthesis on a surface employed for pressure bonding, a surface opposite to this surface or at least two side surfaces intersecting with these surfaces on a substrate of a bonding tool tip that is applicable for bonding and packaging a semiconductor chip.
摘要翻译：具有至少1×10 -4欧姆·厘米的电阻率和小于1×10 3欧姆·厘米的导电多晶金刚石膜，其膜厚度在至少0.1μm至不大于500μm的范围内，通过气相合成用于压接的表面，与该表面相对的表面或与适用于接合和封装半导体芯片的接合工具尖端的基板上的这些表面相交的至少两个侧表面。

2. 发明授权

US06184611B2 Electron-emitting element 失效
标题翻译：电子发射元件
公开(公告)号：US06184611B2
公开(公告)日：2001-02-06
申请号：US09037514
申请日：1998-03-10
申请人： Hirohisa Saito , Takashi Tsuno , Hiromu Shiomi , Yoshiaki Kumazawa , Takahiro Imai
发明人： Hirohisa Saito , Takashi Tsuno , Hiromu Shiomi , Yoshiaki Kumazawa , Takahiro Imai
IPC分类号： H01J102
CPC分类号： H01J1/3042 , H01J2201/30457
摘要： An electron-emitting element comprises a diamond substrate, and a diamond protrusion grown on a surface of the diamond substrate so as to have a pointed portion in a form capable of emitting an electron. Since the diamond protrusion formed by growth has a sharply pointed tip portion, it can fully emit electrons. Preferably, the surface of the diamond substrate is a {100} face, and the diamond protrusion is surrounded by {111} faces.
摘要翻译：电子发射元件包括金刚石衬底和在金刚石衬底的表面上生长的金刚石突起，以便具有能够发射电子的形式的尖端部分。由于通过生长形成的金刚石突起具有尖锐的尖端部分，所以它可以完全发射电子。优选地，金刚石基底的表面是{100}面，并且金刚石突起被{111}面包围。

3. 发明授权

US06267637B1 Electron-emitting element, method of making the same, and electronic device 失效
标题翻译：电子发射元件及其制造方法和电子器件
公开(公告)号：US06267637B1
公开(公告)日：2001-07-31
申请号：US09437092
申请日：1999-11-09
申请人： Hirohisa Saito , Takashi Tsuno , Hiromu Shiomi , Yoshiaki Kumazawa , Takahiro Imai
发明人： Hirohisa Saito , Takashi Tsuno , Hiromu Shiomi , Yoshiaki Kumazawa , Takahiro Imai
IPC分类号： H01J924
CPC分类号： H01J1/3042 , H01J2201/30457
摘要： An electron-emitting element comprises a diamond substrate, and a diamond protrusion grown on a surface of the diamond substrate so as to have a pointed portion in a form capable of emitting an electron. Since the diamond protrusion formed by growth has a sharply pointed tip portion, it can fully emit electrons. Preferably, the surface of the diamond substrate is a {100} face, and the diamond protrusion is surrounded by {111} faces.
摘要翻译：电子发射元件包括金刚石衬底和在金刚石衬底的表面上生长的金刚石突起，以便具有能够发射电子的形式的尖端部分。由于通过生长形成的金刚石突起具有尖锐的尖端部分，所以它可以完全发射电子。优选地，金刚石基底的表面是{100}面，并且金刚石突起被{111}面包围。

4. 发明授权

US5387310A Method for producing single crystal diamond film 失效
标题翻译：单晶金刚石薄膜的制造方法
公开(公告)号：US5387310A
公开(公告)日：1995-02-07
申请号：US47384
申请日：1993-04-16
申请人： Hiromu Shiomi , Naoji Fujimori
发明人： Hiromu Shiomi , Naoji Fujimori
IPC分类号： C30B29/04 , C30B25/02
CPC分类号： C30B25/02 , C30B29/04
摘要： A single crystal diamond film having good electrical characteristics is produced by a method which comprises steps of decomposing a raw material gas comprising a hydrogen gas and a carbon-containing compound and epitaxially growing a single crystal diamond film on a single crystal substrate in a vapor phase, wherein a molar ratio of the carbon atoms in the carbon-containing compound to the hydrogen is from 2:100 to 10:100 and a lattice constant of the single crystal substrate satisfies the following relation:.vertline.(a-a.sub.0)/a.vertline..times.100.ltoreq.20 (I)wherein a.sub.0 is the lattice constant of diamond (3.567 .ANG.) and a is a lattice constant of the single crystal substrate.
摘要翻译：具有良好电特性的单晶金刚石薄膜是通过以下步骤制造的：一种包括氢气和含碳化合物的原料气体在气相中在单晶基板上分解外延生长单晶金刚石膜的步骤其中，含碳化合物中的碳原子与氢的摩尔比为2：100〜10：100，单晶基板的晶格常数满足：（a-a0）/ a | x100 =（I）其中a0是金刚石的晶格常数（3.567 ANGSTROM），a是单晶衬底的晶格常数。

5. 发明授权

US5252840A Semiconductor device having differently doped diamond layers 失效
标题翻译：具有不同掺杂金刚石层的半导体器件
公开(公告)号：US5252840A
公开(公告)日：1993-10-12
申请号：US697438
申请日：1991-05-09
申请人： Hiromu Shiomi , Yoshiki Nishibayashi , Naoji Fujimori
发明人： Hiromu Shiomi , Yoshiki Nishibayashi , Naoji Fujimori
IPC分类号： H01L21/04 , H01L21/205 , H01L29/16 , H01L29/47 , H01L29/812 , H01L29/872 , H01L29/161 , H01L29/20
CPC分类号： H01L29/872 , H01L21/02376 , H01L21/02381 , H01L21/02433 , H01L21/02444 , H01L21/02527 , H01L21/02579 , H01L21/0262 , H01L29/1602 , H01L29/6603 , H01L29/66045 , H01L29/812
摘要： A semiconductor device having active parts made from semiconductor diamond. The active parts include a high doped diamond layer for supplying free carriers and a non- or low doped diamond layer for giving the free carriers a conductive region. The free carriers are transferred from the high doped diamond layer to the non- or low doped diamond layer by diffusion or an applied electric field. Since the free carriers move at high speeds in the non- or low doped diamond layer without being scattered by dopant atoms, the semiconductor device is applicable to high frequency devices with stability against a change in temperature.

6. 发明授权

US4982243A Schottky contact 失效
标题翻译：肖特基接触
公开(公告)号：US4982243A
公开(公告)日：1991-01-01
申请号：US329825
申请日：1989-03-28
申请人： Hideaki Nakahata , Takahiro Imai , Hiromu Shiomi , Naoji Fujimori
发明人： Hideaki Nakahata , Takahiro Imai , Hiromu Shiomi , Naoji Fujimori
IPC分类号： H01L29/16 , H01L21/205 , H01L29/04 , H01L29/423 , H01L29/47 , H01L29/861 , H01L29/868 , H01L29/872
CPC分类号： H01L33/40 , H01L29/045 , H01L29/47 , H01L29/872 , H01L33/0033 , H01L33/34
摘要： A schottky contact which comprises a single crystal diamond substrate, an epitaxial diamond layer formed on said substrate and a schottky electrode layer formed on said epitaxial diamond layer, wherein said substrate has at least one polished surface which inclines at an angle of not larger than 10.degree. to a (100) plane and said epitaxial diamond layer is formed on said surface, provides a device which has good thermal resistance and environmental resistance and which device can be easily highly integrated.
摘要翻译：一种肖特基接触，其包括单晶金刚石基底，形成在所述基底上的外延金刚石层和形成在所述外延金刚石层上的肖特基电极层，其中所述基底具有至少一个抛光表面，其倾斜不大于10° DEG至（100）面，并且所述外延金刚石层形成在所述表面上，提供具有良好耐热性和耐环境性的器件，并且该器件可以容易地高度集成。

7. 发明授权

US5436036A Method of synthesizing hard material 失效
标题翻译：硬质材料的合成方法
公开(公告)号：US5436036A
公开(公告)日：1995-07-25
申请号：US79105
申请日：1993-06-17
申请人： Hiromu Shiomi , Naoji Fujimori , Nobuhiro Ota , Takahiro Imai
发明人： Hiromu Shiomi , Naoji Fujimori , Nobuhiro Ota , Takahiro Imai
IPC分类号： C23C16/27 , C23C16/34 , C23C16/511 , B05D3/06
CPC分类号： C23C16/274 , C23C16/277 , C23C16/342 , C23C16/511
摘要： A method of vapor-phase synthesizing a hard material use a raw material gas supplied into a reaction tube (6) while irradiating a region of the reaction tube (6) with microwaves (18) of a prescribed frequency for causing a synthesizing reaction to produce the hard material along a prescribed direction, by a plasma generation. In the reaction tube (6), at least two plate electrodes (17a, 17b, 19a, 19b) are oppositely arranged in parallel vertically to electric fields of the microwaves (18), so that the plasma is excited between the plate electrodes (17a, 17b, 19a, 19b) for vapor-phase synthesizing the hard material. The microwaves (18) of high electric power are introduced into the reaction tube (6) through a waveguide (5) without loss, so that strong electric fields can be homogeneously and stably distributed between the opposite plate electrodes.
摘要翻译：气相合成硬质材料的方法使用供给反应管（6）的原料气体，同时用规定频率的微波（18）向反应管（6）的区域照射，从而产生合成反应通过等离子体产生沿规定方向的硬质材料。在反应管（6）中，至少两个平板电极（17a，17b，19a，19b）在与微波（18）的电场垂直的方向上相互平行地排列，使得等离子体在平板电极（17a），17b，19a，19b），用于气相合成硬质材料。高功率的微波（18）通过波导（5）而不损耗地引入反应管（6），使得强电场能够均匀稳定地分布在相对的板电极之间。

8. 发明授权

US5400738A Method for producing single crystal diamond film 失效
标题翻译：单晶金刚石薄膜的制造方法
公开(公告)号：US5400738A
公开(公告)日：1995-03-28
申请号：US987557
申请日：1992-12-08
申请人： Hiromu Shiomi , Takahiro Imai , Naoji Fujimori
发明人： Hiromu Shiomi , Takahiro Imai , Naoji Fujimori
IPC分类号： C30B29/04 , C30B25/02
CPC分类号： C30B25/02 , C30B29/04 , Y10S117/919
摘要： A single crystal diamond film having good crystallinity and electrical and optical characteristics is produced by a method which comprises steps of decomposing a raw material gas comprising a hydrogen gas, a carbon containing compound and an oxygen-containing compound and growing a single crystal diamond film on a substrate in a vapor phase.
摘要翻译：具有良好的结晶度和电学和光学特性的单晶金刚石膜通过包括以下步骤的方法制备：将包含氢气，含碳化合物和含氧化合物的原料气体分解并生长单晶金刚石膜气相中的底物。

9. 发明授权

US5243199A High frequency device 失效
标题翻译：高频设备
公开(公告)号：US5243199A
公开(公告)日：1993-09-07
申请号：US902788
申请日：1992-06-24
申请人： Hiromu Shiomi , Yoshiki Nishibayashi , Naoji Fujimori
发明人： Hiromu Shiomi , Yoshiki Nishibayashi , Naoji Fujimori
IPC分类号： H01L23/373 , H01L23/66 , H01L29/16 , H01L29/864 , H01L29/872
CPC分类号： H01L29/1602 , H01L23/3732 , H01L23/66 , H01L29/864 , H01L29/872 , H01L2924/0002
摘要： Improvement of a high frequency device having metal layers, active semiconductor layers and other semiconductor layers which make use of carrier avalanche or carrier injection induced by a reverse bias voltage for amplification or oscillation of high frequency waves. The active semiconductor layers are made of semiconductor diamond. High heat conductivity and high insulation breakdown voltage of diamond heighten the output power of oscillation or amplification.
摘要翻译：改进具有金属层，有源半导体层和其他半导体层的高频器件，其利用由反偏置电压引起的载流子雪崩或载流子注入用于高频波的放大或振荡。有源半导体层由半导体金刚石制成。金刚石的高导热性和高绝缘击穿电压提高了振荡或放大的输出功率。

10. 发明授权

US5242663A Method of and apparatus for synthesizing hard material 失效
标题翻译：用于合成硬质材料的方法和装置
公开(公告)号：US5242663A
公开(公告)日：1993-09-07
申请号：US584912
申请日：1990-09-18
申请人： Hiromu Shiomi , Naoji Fujimori , Nobuhiro Ota , Takahiro Imai
发明人： Hiromu Shiomi , Naoji Fujimori , Nobuhiro Ota , Takahiro Imai
IPC分类号： C23C16/27 , C23C16/34 , C23C16/511
CPC分类号： C23C16/274 , C23C16/277 , C23C16/342 , C23C16/511
摘要： A method of and an apparatus for vapor-phase synthesizing a hard material use a raw material gas supplied into a reaction tube (6) while irradiating a region of the reaction tube (6) with microwaves (18) of a prescribed frequency for causing a synthesizing reaction to produce the hard material along a prescribed direction, by a plasma generation. In the reaction tube (6), at least two plate electrodes (17a, 17b, 19a, 19b) are oppositely arranged in parallel vertically to electric fields of the microwaves (18), so that the plasma is excited between the plate electrodes (17a, 17b, 19a, 19b) for vapor-phase synthesizing the hard material. The microwaves (18) of high electric power are introduced into the reaction tube (6) through a waveguide (5) without loss, so that strong electric fields can be homogeneously and stably distributed between the opposite plate electrodes.

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