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1. 发明申请

US20070176531A1 Phoshor and light-emitting diode 审中-公开
标题翻译： Phoshor和发光二极管
公开(公告)号：US20070176531A1
公开(公告)日：2007-08-02
申请号：US10594010
申请日：2005-03-22
申请人： Hiroyuki Kinoshita , Hiromu Shiomi , Makolo Sasaki , Toshihiko Hayashi , Hiroshi Amano , Satoshi Kamiyama , Motoaki Twaya , Isamu Akasaki
发明人： Hiroyuki Kinoshita , Hiromu Shiomi , Makolo Sasaki , Toshihiko Hayashi , Hiroshi Amano , Satoshi Kamiyama , Motoaki Twaya , Isamu Akasaki
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： C09K11/63 , C09K11/0883 , C09K11/59 , C30B23/00 , C30B29/36 , H01L33/502 , H01L2224/16145 , H01L2224/45144 , H01L2224/48091 , H01L2224/49107 , H01L2224/8592 , H01L2924/00014 , H01L2924/00
摘要： Disclosed is a phosphor which is excited by a long wavelength light source in the ultraviolet region or blue-violet visible region and mainly emits light in violet-blue-yellow-red visible region. Also disclosed is a low-cost light-emitting diode which is easily mounted and excellent in color rendering properties. This light-emitting diode does not have much color change due to radiation angle. A phosphor composed of SiC is characterized in that it is excited by an outside light source for emitting light and doped with N and at least one of B and Al.
摘要翻译：公开了在紫外线区域或蓝紫色可见区域被长波长光源激发的荧光体，主要发出紫 - 蓝 - 黄 - 红 - 红色可见区域的光。还公开了一种易于安装并且显色性优异的低成本发光二极管。该发光二极管由于辐射角度而没有太多的颜色变化。由SiC构成的荧光体的特征在于，其被外部光源激发，发光并掺杂有N和B和Al中的至少一种。

2. 发明申请

US20080277670A1 SiC crystal and semiconductor device 有权
标题翻译： SiC晶体和半导体器件
公开(公告)号：US20080277670A1
公开(公告)日：2008-11-13
申请号：US12152016
申请日：2008-05-12
申请人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya , Masahiro Yoshimoto , Hiroyuki Kinoshita
发明人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya , Masahiro Yoshimoto , Hiroyuki Kinoshita
IPC分类号： H01L33/00
CPC分类号： B23K35/262 , C22C13/00 , H01B1/026
摘要： The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm−3; donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017 cm−3 and donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.
摘要翻译：本发明公开了一种SiC晶体，其包括：浓度大于5×10 17 cm -3的受主杂质; 供体杂质浓度小于1×10 9 -3 -3，且大于受体杂质的浓度。本发明公开了一种半导体器件，包括：具有浓度大于5×10 17 cm -3的受主杂质的SiC荧光层和位于浓度小于1×10 9 cm -3以上且大于受主杂质的浓度; 以及层叠在SiC荧光层上并发射用于SiC荧光层的激发光的发光层。

3. 发明授权

US07297989B2 Diboride single crystal substrate, semiconductor device using this and its manufacturing method 失效
标题翻译：二硼化物单晶基板，使用这种半导体器件及其制造方法
公开(公告)号：US07297989B2
公开(公告)日：2007-11-20
申请号：US10525753
申请日：2003-08-21
申请人： Shigeki Otani , Hiroyuki Kinoshita , Hiroyuki Matsunami , Jun Suda , Hiroshi Amano , Isamu Akasaki , Satoshi Kamiyama
发明人： Shigeki Otani , Hiroyuki Kinoshita , Hiroyuki Matsunami , Jun Suda , Hiroshi Amano , Isamu Akasaki , Satoshi Kamiyama
IPC分类号： H01L33/00
CPC分类号： H01L31/0264 , C30B29/10 , C30B33/00 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L29/045 , H01L29/24 , H01S5/0213 , H01S5/0218 , H01S5/32341
摘要： Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufacture wherein the substrate is a single crystal substrate 1 of diboride XB2 (where X is either Zr or Ti) which is facially oriented in a (0001) plane 2 and has a thickness of 0.1 mm or less. The substrate 1 is permitted cleaving and splitting along a (10-10) plane 4 with ease. Using this substrate to form a semiconductor laser diode of a nitride compound, a vertical structure device can be realized. Resonant planes of a semiconductor laser diode with a minimum of loss can be fabricated by splitting the device in a direction parallel to the (10-10) plane. A method of manufacture that eliminates a margin of cutting is also realized.
摘要翻译：公开了具有与氮化物化合物半导体相同的解理面并具有导电性的二硼化物单晶基板; 半导体激光二极管和使用这种衬底的半导体器件及其制造方法，其中衬底是面向取向的二硼化物XB 2 N（其中X是Zr或Ti）的单晶衬底1 在（0001）面2中，具有0.1mm以下的厚度。允许衬底1容易地沿着（10-10）平面4进行切割和分割。使用该基板形成氮化物化合物的半导体激光二极管，可以实现垂直结构装置。具有最小损耗的半导体激光二极管的谐振平面可以通过在与（10-10）平面平行的方向上分割器件来制造。还实现了消除切割余量的制造方法。

4. 发明授权

US07855385B2 SiC crystal and semiconductor device 有权
标题翻译： SiC晶体和半导体器件
公开(公告)号：US07855385B2
公开(公告)日：2010-12-21
申请号：US12152016
申请日：2008-05-12
申请人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya , Masahiro Yoshimoto , Hiroyuki Kinoshita
发明人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya , Masahiro Yoshimoto , Hiroyuki Kinoshita
IPC分类号： H01L31/0312
CPC分类号： B23K35/262 , C22C13/00 , H01B1/026
摘要： The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm−3; donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017 cm−3 and donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.
摘要翻译：本发明公开了一种SiC晶体，其包含：浓度大于5×1017cm-3的受主杂质; 供体杂质浓度小于1×1019 cm-3，大于受主杂质的浓度。本发明公开了一种半导体器件，包括：具有浓度大于5×1017cm-3的受主杂质的SiC荧光层和浓度小于1×1019 cm -3并且大于受体杂质浓度; 以及层叠在SiC荧光层上并发射用于SiC荧光层的激发光的发光层。

5. 发明授权

US07732826B2 Semiconductor and method of semiconductor fabrication 有权
标题翻译：半导体和半导体制造方法
公开(公告)号：US07732826B2
公开(公告)日：2010-06-08
申请号：US11603977
申请日：2006-11-21
申请人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya , Hiroyuki Kinoshita
发明人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya , Hiroyuki Kinoshita
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/04 , H01L33/06 , H01L33/08 , H01L33/32
摘要： The present invention discloses a semiconductor, includes one or more luminescent layers; and one or more electron gas layers with two-dimensional electron gases that are distributed parallel to the luminescent layers.
摘要翻译：本发明公开了一种半导体，包括一个或多个发光层; 以及具有与发光层平行分布的二维电子气体的一个或多个电子气体层。

6. 发明申请

US20060102924A1 Diboride single crystal substrate, semiconductor device using this and its manufacturing method 失效
标题翻译：二硼化物单晶基板，使用这种半导体器件及其制造方法
公开(公告)号：US20060102924A1
公开(公告)日：2006-05-18
申请号：US10525753
申请日：2003-08-21
申请人： Shigeki Otani , Hiroyuki Kinoshita , Hiroyuki Matsunami , Jun Suda , Hiroshi Amano , Isamu Akasaki , Satoshi Kamiyama
发明人： Shigeki Otani , Hiroyuki Kinoshita , Hiroyuki Matsunami , Jun Suda , Hiroshi Amano , Isamu Akasaki , Satoshi Kamiyama
IPC分类号： H01L33/00
CPC分类号： H01L31/0264 , C30B29/10 , C30B33/00 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L29/045 , H01L29/24 , H01S5/0213 , H01S5/0218 , H01S5/32341
摘要： Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufacture wherein the substrate is a single crystal substrate 1 of diboride XB2 (where X is either Zr or Ti) which is facially oriented in a (0001) plane 2 and has a thickness of 0.1 mm or less. The substrate 1 is permitted cleaving and splitting along a (10-10) plane 4 with ease. Using this substrate to form a semiconductor laser diode of a nitride compound, a vertical structure device can be realized. Resonant planes of a semiconductor laser diode with a minimum of loss can be fabricated by splitting the device in a direction parallel to the (10-10) plane. A method of manufacture that eliminates a margin of cutting is also realized.
摘要翻译：公开了具有与氮化物化合物半导体相同的解理面并具有导电性的二硼化物单晶基板; 半导体激光二极管和使用这种衬底的半导体器件及其制造方法，其中衬底是面向取向的二硼化物XB 2 N（其中X是Zr或Ti）的单晶衬底1 在（0001）面2中，具有0.1mm以下的厚度。允许衬底1容易地沿着（10-10）平面4进行切割和分割。使用该基板形成氮化物化合物的半导体激光二极管，可以实现垂直结构装置。具有最小损耗的半导体激光二极管的谐振平面可以通过在与（10-10）平面平行的方向上分割器件来制造。还实现了消除切割余量的制造方法。

7. 发明申请

US20070114560A1 Semiconductor and method of semiconductor fabrication 有权
标题翻译：半导体和半导体制造方法
公开(公告)号：US20070114560A1
公开(公告)日：2007-05-24
申请号：US11603977
申请日：2006-11-21
申请人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya , Hiroyuki Kinoshita
发明人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Motoaki Iwaya , Hiroyuki Kinoshita
IPC分类号： H01L33/00 , H01L29/24
CPC分类号： H01L33/14 , H01L33/04 , H01L33/06 , H01L33/08 , H01L33/32
摘要： The present invention discloses a semiconductor, includes one or more luminescent layers; and one or more electron gas layers with two-dimensional electron gases that are distributed parallel to the luminescent layers.
摘要翻译：本发明公开了一种半导体，包括一个或多个发光层; 以及具有与发光层平行分布的二维电子气体的一个或多个电子气体层。

8. 发明授权

US08013343B2 Silicon carbide single crystal, silicon carbide substrate and manufacturing method for silicon carbide single crystal 有权
标题翻译：碳化硅单晶，碳化硅基板和碳化硅单晶的制造方法
公开(公告)号：US08013343B2
公开(公告)日：2011-09-06
申请号：US11258998
申请日：2005-10-27
申请人： Hiromu Shiomi , Hiroyuki Kinoshita
发明人： Hiromu Shiomi , Hiroyuki Kinoshita
IPC分类号： H01L29/36 , C30B23/02 , C01B31/36
CPC分类号： C30B29/36 , C30B23/00 , Y10S438/931
摘要： SiC single crystal that includes a first dopant functioning as an acceptor, and a second dopant functioning as a donor is provided, where the content of the first dopant is no less than 5×1015 atoms/cm3, the content of the second dopant is no less than 5×1015 atoms/cm3, and the content of the first dopant is greater than the content of the second dopant. A manufacturing method for silicon carbide single crystal is provided with the steps of: fabricating a raw material by mixing a metal boride with a material that includes carbon and silicon; vaporizing the raw material; generating a mixed gas that includes carbon, silicon, boron and nitride; and growing silicon carbide single crystal that includes boron and nitrogen on a surface of a seed crystal substrate by re-crystallizing the mixed gas on the surface of the seed crystal substrate.
摘要翻译：提供了包含作为受体发挥作用的第一掺杂剂的SiC单晶和作为供体的第二掺杂剂，其中第一掺杂剂的含量不小于5×1015原子/ cm3，第二掺杂剂的含量不为小于5×1015原子/ cm3，第一掺杂剂的含量大于第二掺杂剂的含量。提供了一种碳化硅单晶的制造方法，其特征在于：通过将金属硼化物与包含碳和硅的材料混合来制造原料; 蒸发原料; 产生包括碳，硅，硼和氮化物的混合气体; 以及通过使晶种基板的表面上的混合气体再结晶，在晶种基板的表面上生长包含硼和氮的碳化硅单晶。

9. 发明申请

US20060091402A1 Silicon carbide single crystal, silicon carbide substrate and manufacturing method for silicon carbide single crystal 有权
标题翻译：碳化硅单晶，碳化硅基板和碳化硅单晶的制造方法
公开(公告)号：US20060091402A1
公开(公告)日：2006-05-04
申请号：US11258998
申请日：2005-10-27
申请人： Hiromu Shiomi , Hiroyuki Kinoshita
发明人： Hiromu Shiomi , Hiroyuki Kinoshita
IPC分类号： H01L31/0312
CPC分类号： C30B29/36 , C30B23/00 , Y10S438/931
摘要： SiC single crystal that includes a first dopant functioning as an acceptor, and a second dopant functioning as a donor is provided, where the content of the first dopant is no less than 5×1015 atoms/cm3, the content of the second dopant is no less than 5×1015 atoms/cm3, and the content of the first dopant is greater than the content of the second dopant. A manufacturing method for silicon carbide single crystal is provided with the steps of: fabricating a raw material by mixing a metal boride with a material that includes carbon and silicon; vaporizing the raw material; generating a mixed gas that includes carbon, silicon, boron and nitride; and growing silicon carbide single crystal that includes boron and nitrogen on a surface of a seed crystal substrate by re-crystallizing the mixed gas on the surface of the seed crystal substrate.
摘要翻译：提供包括用作受体的第一掺杂剂和用作供体的第二掺杂剂的SiC单晶，其中第一掺杂剂的含量不小于5×10 15原子/ 3，第二掺杂剂的含量不小于5×10 15原子/ cm 3，第一掺杂剂的含量大于第二掺杂剂。提供了一种碳化硅单晶的制造方法，其特征在于：通过将金属硼化物与包含碳和硅的材料混合来制造原料; 蒸发原料; 产生包括碳，硅，硼和氮化物的混合气体; 以及通过使晶种基板的表面上的混合气体再结晶，在晶种基板的表面上生长包含硼和氮的碳化硅单晶。

10. 发明授权

US09642540B2 Blood pressure measurement device 有权
公开(公告)号：US09642540B2
公开(公告)日：2017-05-09
申请号：US13751246
申请日：2013-01-28
申请人： Hiroyuki Kinoshita , Chisato Uesaka , Yukiya Sawanoi
发明人： Hiroyuki Kinoshita , Chisato Uesaka , Yukiya Sawanoi
IPC分类号： A61B5/021 , A61B5/0225 , A61B17/132 , A61B5/022
CPC分类号： A61B5/02141 , A61B5/02225 , A61B5/02233 , A61B5/0225 , A61B17/132
摘要： A blood pressure measurement device includes a measurement air bladder for being wrapped around a body part to be measured, a compression member that compresses the measurement air bladder from the outside of the measurement air bladder against the body part to be measured; an inflation member for inflating the measurement air bladder, a deflation member for deflating the measurement air bladder, a blood pressure determination unit that determines a blood pressure during the inflation by the inflation member or during the deflation by the deflation member, and a control unit that causes the compression member to apply a pressure that is higher than or equal to an atmospheric pressure to the measurement air bladder when an internal pressure of the measurement air bladder reaches or falls below a certain pressure due to the deflation by the deflation member.

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