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1. 发明授权

US08009162B2 Thin-film semiconductor device, display device including the same, and method of driving display device 有权
标题翻译：薄膜半导体器件，包括其的显示器件以及驱动显示器件的方法
公开(公告)号：US08009162B2
公开(公告)日：2011-08-30
申请号：US12759203
申请日：2010-04-13
申请人： Kenichi Takatori
发明人： Kenichi Takatori
IPC分类号： G09G3/20
CPC分类号： G01K7/015 , G01K1/14 , G01K2217/00 , G02F1/1362 , Y10S257/93
摘要： A thin-film semiconductor device includes a temperature sensor formed of a thin-film semiconductor and sensing a temperature as current, and a current-voltage converter formed of a thin-film semiconductor and having temperature dependence in which its current-voltage characteristic is different from that of the temperature sensor. A temperature sensed by the temperature sensor is converted to a voltage by the current-voltage converter.
摘要翻译：薄膜半导体器件包括由薄膜半导体形成的温度传感器，并将温度感测为电流，以及由薄膜半导体形成的具有温度依赖性的电流 - 电压转换器，其中电流 - 电压特性不同从温度传感器的。由温度传感器感测的温度由电流 - 电压转换器转换成电压。

2. 发明授权

US07982278B2 Thermoelectric module 有权
标题翻译：热电模块
公开(公告)号：US07982278B2
公开(公告)日：2011-07-19
申请号：US12360293
申请日：2009-01-27
申请人： Kouji Tokunaga , Kenichi Tajima
发明人： Kouji Tokunaga , Kenichi Tajima
IPC分类号： H01L31/058 , H01L29/06 , H01L35/28
CPC分类号： H01L35/32 , F24F5/0042 , H01L35/08 , Y10S257/93
摘要： A thermoelectric module has a first substrate, a second substrate spaced from the first substrate, a plurality of P type thermoelectric elements and N type thermoelectric elements arranged in the space between the first and second substrates, and a plurality of electrodes which connect the P type and N type thermoelectric elements in series. Each electrode is connected to a respective one of the plurality of P type thermoelectric elements at a first connection and a respective one of the plurality of N type thermoelectric elements in the space, and a sealant is located at an edge portion of the space. Each one of a series of first or outer electrodes closest to the edge portion of the space has a concave portion that is concaved in a direction departing from the edge portion of the space and is at a position between the first connection and the second connection.
摘要翻译：热电模块具有第一衬底，与第一衬底间隔开的第二衬底，布置在第一和第二衬底之间的空间中的多个P型热电元件和N型热电元件，以及连接P型和N型热电元件。每个电极在空间中的第一连接处和多个N型热电元件中的相应一个处连接到多个P型热电元件中的相应一个，并且密封剂位于空间的边缘部分。最靠近空间的边缘部分的一系列第一或外部电极中的每一个具有在离开该空间的边缘部分的方向上凹陷并且处于第一连接和第二连接之间的位置的凹部。

3. 发明授权

US07855396B2 Light emitting diode package structure 有权
标题翻译：发光二极管封装结构
公开(公告)号：US07855396B2
公开(公告)日：2010-12-21
申请号：US11861294
申请日：2007-09-26
申请人： Ming-Ji Dai , Chun-Kai Liu , Chih-Kuang Yu
发明人： Ming-Ji Dai , Chun-Kai Liu , Chih-Kuang Yu
IPC分类号： H01L33/00
CPC分类号： H01L25/167 , H01L25/0753 , H01L33/645 , H01L2224/48227 , Y10S257/93 , H01L2224/48091 , H01L2924/00014
摘要： A light emitting diode (LED) package structure including a first substrate, one or more LED chips, a second substrate, and a thermoelectric cooling device is provided. The first substrate has a first surface and a corresponding second surface. The LED chip suitable for emitting a light is arranged on the first surface of the first substrate, and is electrically connected to the first substrate. The second substrate is below the first substrate, and has a third surface and a corresponding fourth surface. The third surface faces the second surface. The thermoelectric cooling device is arranged between the second surface of the first substrate and the third surface of the second substrate for conducting heat generated by the LED chip during operation.
摘要翻译：提供了包括第一基板，一个或多个LED芯片，第二基板和热电冷却装置的发光二极管（LED）封装结构。第一基板具有第一表面和相应的第二表面。适于发光的LED芯片布置在第一基板的第一表面上，并与第一基板电连接。第二基板在第一基板的下面，并且具有第三表面和相应的第四表面。第三表面面向第二表面。热电冷却装置设置在第一基板的第二表面和第二基板的第三表面之间，用于在操作期间传导由LED芯片产生的热量。

4. 发明申请

US20100176506A1 THERMOELECTRIC 3D COOLING 有权
标题翻译：热电3D冷却
公开(公告)号：US20100176506A1
公开(公告)日：2010-07-15
申请号：US12351878
申请日：2009-01-12
申请人： Louis Lu-Chen Hsu , Ping-Chuan Wang , Xiaojin Wei , Huilong Zhu
发明人： Louis Lu-Chen Hsu , Ping-Chuan Wang , Xiaojin Wei , Huilong Zhu
IPC分类号： H01L23/36 , H01L21/3205
CPC分类号： H01L23/481 , H01L25/0657 , H01L27/16 , H01L2225/06513 , H01L2225/06541 , H01L2225/06589 , H01L2924/0002 , Y10S257/93 , H01L2924/00
摘要： The invention comprises a 3D chip stack with an intervening thermoelectric coupling (TEC) plate. Through silicon vias in the 3D chip stack transfer electronic signals among the chips in the 3D stack, power the TEC plate, as well as distribute heat in the stack from hotter chips to cooler chips.
摘要翻译：本发明包括具有中间热电耦合（TEC）板的3D芯片堆叠。通过3D芯片堆叠中的硅通孔在3D堆叠中的芯片之间传送电子信号，为TEC板供电，以及将堆叠中的热量从较热的芯片分配到较冷的芯片。

5. 发明授权

US07751191B2 Technique for cooling a device 失效
标题翻译：冷却设备的技术
公开(公告)号：US07751191B2
公开(公告)日：2010-07-06
申请号：US12192231
申请日：2008-08-15
申请人： Kohichi Kakikawa , Yohichi Matsui , Hiroyuki Takenoshita
发明人： Kohichi Kakikawa , Yohichi Matsui , Hiroyuki Takenoshita
IPC分类号： H05K7/20 , F25B21/02 , H05K5/00
CPC分类号： H05K7/20563 , H05K7/20572 , Y10S257/93
摘要： A cooling system that promotes cooling of a device including a heat source therein is provided, the cooling system includes: a cooling unit that absorbs, upstream from the heat source, heat from intake air that the device takes in from an outside to cool the heat source and dissipates the heat to an outside of a flow path of the intake air; and a fluid control unit that lets fluid flow toward the cooling unit so as to discharge the heat absorbed by the cooling unit from the intake air to an outside of the cooling unit.
摘要翻译：提供了一种促进其中包括热源的装置的冷却的冷却系统，所述冷却系统包括：冷却单元，其从所述热源的上游吸收来自外部的吸入空气的热量以冷却所述热量来源并将热量散发到进气的流路的外部; 以及流体控制单元，其使流体朝向所述冷却单元流动，以将从所述冷却单元吸收的热量从所述进气排出到所述冷却单元的外部。

6. 发明申请

US20100155700A1 Thermoelectric Cooler for Semiconductor Devices with TSV 有权
标题翻译：具有TSV的半导体器件热电冷却器
公开(公告)号：US20100155700A1
公开(公告)日：2010-06-24
申请号：US12341732
申请日：2008-12-22
申请人： Shih Cheng Chang , Hsin-Yu Pan
发明人： Shih Cheng Chang , Hsin-Yu Pan
IPC分类号： H01L29/06
CPC分类号： H01L23/38 , H01L2924/0002 , Y10S257/93 , H01L2924/00
摘要： This invention discloses a thermoelectric structure for cooling an integrated circuit (IC) chip, the thermoelectric structure comprises a first type superlattice layer formed on top of the IC chip connected to a first voltage, and a second type superlattice layer formed on the bottom of the IC chip connected to a second voltage, the second voltage being different from the first voltage, wherein an power supply current flows through the first and second type superlattice layer for cooling the IC chip.
摘要翻译：本发明公开了一种用于冷却集成电路（IC）芯片的热电结构，该热电结构包括形成在与第一电压相连的IC芯片顶部上的第一类超晶格层，以及形成在第一电极的底部的第二类型超晶格层 IC芯片连接到第二电压，第二电压不同于第一电压，其中电源电流流过第一和第二类型超晶格层以冷却IC芯片。

7. 发明授权

US07728401B2 Thin-film semiconductor device, circuitry thereof, and apparatus using them 有权
标题翻译：薄膜半导体器件及其电路，以及使用它们的器件
公开(公告)号：US07728401B2
公开(公告)日：2010-06-01
申请号：US11217435
申请日：2005-09-02
申请人： Kenichi Takatori
发明人： Kenichi Takatori
IPC分类号： H01L31/058
CPC分类号： G01K7/015 , G01K1/14 , G01K2217/00 , G02F1/1362 , Y10S257/93
摘要： A thin-film semiconductor device comprises a temperature sensor formed of a thin-film semiconductor and sensing a temperature as current, and a current-voltage converter formed of a thin-film semiconductor and having temperature dependence in which its current-voltage characteristic is different from that of the temperature sensor. A temperature sensed by the temperature sensor is converted to a voltage by the current-voltage converter.
摘要翻译：薄膜半导体器件包括由薄膜半导体形成的温度传感器并将温度感测为电流，以及由薄膜半导体形成并具有其电流 - 电压特性不同的温度依赖性的电流 - 电压转换器从温度传感器的。由温度传感器感测的温度由电流 - 电压转换器转换成电压。

8. 发明申请

US20100072461A1 THERMO-ELECTRIC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：热电半导体器件及其制造方法
公开(公告)号：US20100072461A1
公开(公告)日：2010-03-25
申请号：US12237041
申请日：2008-09-24
申请人： Robert HANNEBAUER
发明人： Robert HANNEBAUER
IPC分类号： H01L29/66 , H01L21/283
CPC分类号： H01L29/66992 , H01L35/00 , Y10S257/93
摘要： A thermo-electric semiconductor device is provided. The thermo-electric semiconductor device includes: a first electrode layer; a spacer layer formed on the first electrode layer and having a plurality of pillars with a uniform height, the plurality of pillars thermally grown and protruded on a surface of the spacer layer; and a second electrode layer formed over the spacer layer in such a manner as to contact tops of the protruded pillars.
摘要翻译：提供了一种热电半导体器件。所述热电半导体装置包括：第一电极层; 间隔层，形成在所述第一电极层上并具有多个具有均匀高度的柱，所述多个柱在所述间隔层的表面上热生长并突出; 以及以与所述突出柱的顶部接触的方式形成在所述间隔层上的第二电极层。

9. 发明授权

US07531739B1 Build-in-place method of manufacturing thermoelectric modules 失效
标题翻译：制造热电模块的内置方法
公开(公告)号：US07531739B1
公开(公告)日：2009-05-12
申请号：US10966685
申请日：2004-10-15
申请人： Joshua E. Moczygemba
发明人： Joshua E. Moczygemba
IPC分类号： H01L35/30 , H01L37/00 , H01L35/34 , H01L21/324
CPC分类号： H01L35/34 , Y10S257/93
摘要： A method of manufacturing a thermoelectric module is provided. The method includes mounting a thermoelectric material to a substrate such that a portion of the thermoelectric material covers a removable pattern. The thermoelectric material is then segmented and the removable pattern is removed. The portions of the thermoelectric material which were covering the removable pattern are also removed, leaving the portions of the thermoelectric material not covering the removable pattern attached to the substrate.
摘要翻译：提供一种制造热电模块的方法。该方法包括将热电材料安装到基板上，使得热电材料的一部分覆盖可移除的图案。然后将热电材料分段并除去可去除的图案。覆盖可移除图案的热电材料的部分也被去除，使得热电材料的部分不覆盖附着到基板的可移除图案。

10. 发明申请

US20090079063A1 MICROELECTRONIC PACKAGE AND METHOD OF COOLING AN INTERCONNECT FEATURE IN SAME 有权
标题翻译：微电子封装及其相互连接功能的冷却方法
公开(公告)号：US20090079063A1
公开(公告)日：2009-03-26
申请号：US11861306
申请日：2007-09-26
申请人： Gregory M. Chrysler , Ravi V. Mahajan , Chia-Pin Chiu
发明人： Gregory M. Chrysler , Ravi V. Mahajan , Chia-Pin Chiu
IPC分类号： H01L23/38 , H01L21/58
CPC分类号： H01L23/38 , H01L24/19 , H01L2224/05001 , H01L2224/05026 , H01L2224/05548 , H01L2224/12105 , H01L2924/00014 , H01L2924/15174 , H01L2924/15312 , H01L2924/18162 , Y10S257/93 , H01L2224/05599 , H01L2224/05099
摘要： A microelectronic package comprises a substrate (110, 310), a die (320) supported by the substrate, an interconnect feature (130, 230, 330) connecting the die and the substrate to each other, and a thermoelectric cooler (140, 170, 240, 340) adjacent to the interconnect feature.
摘要翻译：微电子封装包括衬底（110,310），由衬底支撑的管芯（320），将管芯和衬底彼此连接的互连特征（130,230,330）和热电冷却器（140,170 ，240,340）。

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