专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06730916B1 Electron beam lithography apparatus 有权
标题翻译：电子束光刻设备
公开(公告)号：US06730916B1
公开(公告)日：2004-05-04
申请号：US09691234
申请日：2000-10-19
申请人： Hiroshi Tsuji , Mitsuru Inoue , Norio Saitou , Yasuhiro Someda , Yoshimasa Fukushima
发明人： Hiroshi Tsuji , Mitsuru Inoue , Norio Saitou , Yasuhiro Someda , Yoshimasa Fukushima
IPC分类号： H01J3720
CPC分类号： H01J37/09 , H01J37/20 , H01J2237/3175 , H02K11/01 , H02K41/03
摘要： An electron beam lithography apparatus of the present invention prevents the electron beam trajectory from being affected by a leakage magnetic field from a permanent magnet which is used as a sample stage guide/driving mechanism. In this electron beam lithography apparatus, an air bearing guide is used as a sample stage guide mechanism, and the stage posture is held by attracting the stage floating on a surface plate to the surface plate side by the permanent magnet. To avoid the leakage magnetic field from the permanent magnet from affecting the electron beam irradiation position on the sample, the permanent magnet is magnetically shielded by a shield member. In addition, to reduce variations in magnetic field above the sample, which are generated when the shield member moves in a leakage magnetic field from the electron lens, another shield member is arranged under the electron lens.
摘要翻译：本发明的电子束光刻设备防止电子束轨迹受到用作样品台引导/驱动机构的永久磁铁的泄漏磁场的影响。在该电子束光刻装置中，使用空气轴承引导件作为样品台引导机构，通过永久磁铁吸引在表面板上浮动到台板侧的台架来保持台阶姿态。为了避免来自永磁体的泄漏磁场影响样品上的电子束照射位置，永磁体被屏蔽部件磁屏蔽。此外，为了减小当屏蔽部件在来自电子透镜的泄漏磁场中移动时产生的样品上方的磁场的变化，在电子透镜下方设置有另一个屏蔽部件。

2. 发明授权

US5650631A Electron beam writing system 失效
标题翻译：电子束写入系统
公开(公告)号：US5650631A
公开(公告)日：1997-07-22
申请号：US470592
申请日：1995-06-07
申请人： Yasunari Sohda , Masahide Okumura , Yasuhiro Someda , Hidetoshi Satoh , Yoshinori Nakayama , Norio Saitou
发明人： Yasunari Sohda , Masahide Okumura , Yasuhiro Someda , Hidetoshi Satoh , Yoshinori Nakayama , Norio Saitou
IPC分类号： G21K5/04 , G03F7/20 , H01J37/04 , H01J37/09 , H01J37/147 , H01J37/305 , H01L21/027 , H01J37/30
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/045 , H01J2237/0435 , H01J2237/31774 , H01J2237/31776
摘要： A blanking array is used for controlling an electron beam in an electron beam writing system. Electrodes in the array are formed in parallel and two sets of the parallel electrodes, orthogonal to one another, are used for dividing the electron beam into a plurality of individual exposure areas. The sets of parallel electrodes can be formed in one array by a wire mesh or in two separate arrays spaced closely together or farther apart at different focal point positions. The electrodes are provided to extend across an aperture, such as a square or triangular aperture. For a triangular aperture, the electrodes are made parallel to the hypotenuse of the triangle. The writing patterns are formed by combining the exposure areas. Control of each exposure area is realized by applying opposite polarity voltage to adjacent electrodes in order to deflect the portion of the beam passing between the adjacent electrodes. The deflected beam portions are blocked by a downstream aperture that permits the non-deflected electron beam portions to pass through for forming the patterns to be written.
摘要翻译：消隐阵列用于控制电子束写入系统中的电子束。阵列中的电极平行地形成，并且彼此正交的两组平行电极被用于将电子束分成多个单独的曝光区域。这些平行电极组可以通过丝网形成一个阵列，或者可以在不同的焦点位置处彼此间隔开或更远的两个分离的阵列中形成。电极被设置成延伸穿过诸如正方形或三角形孔的孔。对于三角形孔，电极与三角形的斜边平行。通过组合曝光区域形成书写图案。通过对相邻的电极施加相反极性的电压来实现对每个曝光区域的控制，以便偏转通过相邻电极的光束的部分。偏转的光束部分被允许非偏转的电子束部分通过以形成待写入的图案的下游孔阻挡。

3. 发明授权

US5759423A Electron beam writing method and apparatus for carrying out the same 失效
标题翻译：电子束写入方法及其执行装置
公开(公告)号：US5759423A
公开(公告)日：1998-06-02
申请号：US563329
申请日：1995-11-28
申请人： Yasunari Sohda , Yasuhiro Someda , Hiroyuki Itoh , Katsuhiro Kawasaki , Norio Saitou
发明人： Yasunari Sohda , Yasuhiro Someda , Hiroyuki Itoh , Katsuhiro Kawasaki , Norio Saitou
IPC分类号： G03F7/20 , H01J37/317 , H01L21/027 , B44C1/22 , H01L21/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： An electron beam writing apparatus comprises: an electron beam source for projecting an electron beam; a first mask provided with a first rectangular aperture for passing the electron beam projected by the electron beam source to shape the electron beam in a primary shaped beam having a rectangular cross section; a second mask provided with a second rectangular aperture for passing the primary shaped beam to shape the primary shaped beam in a secondary shaped beam having a rectangular cross section, and triangular apertures for passing the primary shaped beam to form a secondary shaped beam having a triangular cross section; a first electron beam deflecting system for moving the primary shaped beam on the surface of the second mask; and a second electron beam deflecting system for moving the secondary shaped beam on the surface of a workpiece on which a pattern is to be written. Each of the triangular apertures is formed in a size such that the triangular aperture can be entirely covered with a rectangular image formed by the first shaped beam on the surface of the second mask.
摘要翻译：电子束写入装置包括：用于投射电子束的电子束源; 第一掩模，设置有第一矩形孔，用于使由电子束源投影的电子束通过，以将电子束形成为具有矩形横截面的主要形状的梁; 第二掩模，其设置有第二矩形孔，用于使主要成形梁通过，以形成具有矩形截面的次级成形梁的主要成形梁，以及三角形孔，用于使初级成形梁通过以形成具有三角形的二次成形梁横截面; 第一电子束偏转系统，用于将第一形状光束移动到第二掩模的表面上; 以及用于在待写入图案的工件的表面上移动二次成形光束的第二电子束偏转系统。每个三角形孔形成为使得三角形孔可以被由第二掩模的表面上的第一成形束形成的矩形图像完全覆盖的尺寸。

4. 发明授权

US06511048B1 Electron beam lithography apparatus and pattern forming method 失效
标题翻译：电子束光刻设备和图案形成方法
公开(公告)号：US06511048B1
公开(公告)日：2003-01-28
申请号：US09191383
申请日：1998-11-13
申请人： Yasunari Sohda , Yasuhiro Someda , Hiroya Ohta , Takashi Matsuzaka , Norio Saitou , Yoshinori Nakayama
发明人： Yasunari Sohda , Yasuhiro Someda , Hiroya Ohta , Takashi Matsuzaka , Norio Saitou , Yoshinori Nakayama
IPC分类号： H01J3730
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： An electron beam lithography apparatus and a semiconductor device pattern forming method for precisely writing patterns near the periphery of a cell mask so that large scale integrated circuits and fine structure devices are fabricated at high yield rates. Cell figures with lower aperture rates are located peripherally and cell figures with higher aperture rates are located closer to a central portion within each of aperture groups furnished on a second mask of the inventive apparatus adopting cell projection. Illustratively, on a mask for use in semiconductor device fabrication, cell figures for forming line patterns and gate patterns are located centrally and cell figures for forming hole patterns are positioned peripherally in each aperture group. This allows the peripherally located figures to be written precisely in each aperture group.
摘要翻译：一种电子束光刻设备和用于在单元掩模的周围精确地写入图案的半导体器件图案形成方法，从而以高产率制造大规模集成电路和精细结构器件。具有较低孔径率的单元图形位于外围，并且具有较高孔径率的单元图形位于更接近于采用单元投影的本发明设备的第二掩模上提供的每个孔组内的中心部分。示例性地，在用于半导体器件制造的掩模上，用于形成线图案和栅极图案的单元图形位于中央，并且用于形成孔图案的单元图形周边地定位在每个孔组中。这允许在每个孔径组中精确地写入外围定位的图形。

5. 发明授权

US06946665B2 Charged particle beam exposure method and apparatus and device manufacturing method using the apparatus 有权
标题翻译：带电粒子束曝光方法及装置及装置的制造方法
公开(公告)号：US06946665B2
公开(公告)日：2005-09-20
申请号：US10909300
申请日：2004-08-03
申请人： Masato Muraki , Yoshinori Nakayama , Hiroya Ohta , Haruo Yoda , Norio Saitou
发明人： Masato Muraki , Yoshinori Nakayama , Hiroya Ohta , Haruo Yoda , Norio Saitou
IPC分类号： G03F7/20 , H01J37/04 , H01J37/304 , H01J37/305 , H01J37/317 , H01L21/027 , H01J3/07 , H01J3/14
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/317
摘要： A charged particle beam exposure apparatus which exposes a substrate using a plurality of charged particle beams includes a first measurement member for making the plurality of charged particle beams come incident and measuring a total current value of the charged particle beams. A second measurement member makes the plurality of charged particle beams come incident and multiplies electrons of each of the incident charged particle beams, thereby measuring a relative value of a current of each of the charged particle beams.
摘要翻译：使用多个带电粒子束曝光基板的带电粒子束曝光装置包括用于使多个带电粒子束入射的第一测量部件，并测量带电粒子束的总电流值。第二测量构件使多个带电粒子束入射并乘以每个入射带电粒子束的电子，从而测量每个带电粒子束的电流的相对值。

6. 发明授权

US08827966B2 Skin patch instrument for treating pain 有权
标题翻译：用于治疗疼痛的皮肤贴片仪
公开(公告)号：US08827966B2
公开(公告)日：2014-09-09
申请号：US12988686
申请日：2008-04-30
申请人： Norio Saitou
发明人： Norio Saitou
IPC分类号： A61M35/00 , A61N1/30 , A61F13/00 , A61F13/02 , A61B17/00
CPC分类号： A61H1/008 , A61B5/0053 , A61B5/4827 , A61F13/023 , A61F13/0273 , A61F2013/00919 , A61F2013/00936
摘要： A therapeutic patch for treating pain capable of compressing a tender area up to a boundary thereof and/or an entire induration with metallic grains or crushed stones by a treatment method in accordance with a classification determined after clarifying a site of pain by pressing a skin with a pressing bar or fingers (first to fourth fingers) to classify the cause of pain, thereby finding the presence of a geographical tender area and/or the presence of an induration on a skin as the cause of pain.
摘要翻译：一种用于治疗疼痛的治疗补片，其能够通过根据通过按压皮肤澄清疼痛部位而确定的分类后的处理方法将金属颗粒或粉碎石块压缩至其边界的嫩嫩区域和/或整体硬结按压杆或手指（第一至第四指）来分类疼痛的原因，从而发现皮肤上存在地理标记区域和/或硬结的存在作为疼痛的原因。

7. 发明授权

US06667486B2 Electron beam exposure method, electron beam exposure apparatus and device manufacturing method using the same 有权
标题翻译：电子束曝光方法，电子束曝光装置及使用其的装置制造方法
公开(公告)号：US06667486B2
公开(公告)日：2003-12-23
申请号：US10219769
申请日：2002-08-16
申请人： Hiroya Ohta , Yasunari Sohda , Norio Saitou , Haruo Yoda , Yoshikiyo Yui , Shin'ichi Hashimoto
发明人： Hiroya Ohta , Yasunari Sohda , Norio Saitou , Haruo Yoda , Yoshikiyo Yui , Shin'ichi Hashimoto
IPC分类号： H01J3708
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J37/304 , H01J37/3177
摘要： The present invention provides a high-precision and high-speed electron beam exposure technique which corrects the position of each beam in a multi-beam exposure method without using a deflection array and a huge and high-precision driving circuit. In an electron beam exposure method for forming a desired pattern onto a specimen by independently controlling emission and scanning of a plurality of electron beams, a deviation between a pattern formed by each of the plurality of electron beams and the desired pattern is controlled by shifting the position of pattern data of the pattern formed by each of the plurality of electron beams.
摘要翻译：本发明提供一种高精度和高速电子束曝光技术，其不使用偏转阵列和巨大且高精度的驱动电路来校正多光束曝光方法中的每个光束的位置。在通过独立地控制多个电子束的发射和扫描来形成期望图案到电子束的电子束曝光方法中，由多个电子束中的每一个形成的图案与期望的图案之间的偏差通过使由多个电子束中的每一个形成的图案的图案数据的位置。

8. 发明授权

US5757409A Exposure method and pattern data preparation system therefor, pattern data preparation method and mask as well as exposure apparatus 失效
公开(公告)号：US5757409A
公开(公告)日：1998-05-26
申请号：US644089
申请日：1996-05-10
申请人： Yoshihiko Okamoto , Haruo Yoda , Ikuo Takada , Yukinobu Shibata , Akira Hirakawa , Norio Saitou , Shinji Okazaki , Fumio Murai
发明人： Yoshihiko Okamoto , Haruo Yoda , Ikuo Takada , Yukinobu Shibata , Akira Hirakawa , Norio Saitou , Shinji Okazaki , Fumio Murai
IPC分类号： G03F7/20 , H01J37/305 , H01J37/317 , H01L21/027 , B41J2/435
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31766 , H01J2237/31776
摘要： Selective pattern exposure with high reliability is made possible by a desired pattern of repeated pattern and a non-repeated pattern. Exposure technology is obtained to enable improvement of preparation efficiency of pattern data and to secure inspection of an aperture pattern. With the invention, an electron beam is used as focused beam, and a pattern exposure apparatus of a batch transfer system for transferring repeated pattern and non-repeated pattern of plural graphics of a semiconductor integrated circuit or the like comprises an EB drawing section for controlling the beam and irradiating beam onto a sample, a control I/O section, a drawing control section and a data storage section. In the EB drawing section, a semiconductor wafer is mounted on a platform, and in the path of the electron beam from the electron beam source to the stage, a first mask, a blanking electrode, an electron lens, a first deflector, a second deflector, a second mask and a third deflector are installed.

9. 发明授权

US4820928A Lithography apparatus 失效
标题翻译：平版印刷设备
公开(公告)号：US4820928A
公开(公告)日：1989-04-11
申请号：US106499
申请日：1987-10-09
申请人： Mitsuo Ooyama , Kimiaki Ando , Yoshio Kawamura , Norio Saitou , Takanori Simura , Hiroyuki Kohida
发明人： Mitsuo Ooyama , Kimiaki Ando , Yoshio Kawamura , Norio Saitou , Takanori Simura , Hiroyuki Kohida
IPC分类号： G02B5/18 , H01J37/302 , H01J37/305 , H01J37/317 , H01L21/027
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/302 , H01J37/3174 , H01J2237/31762
摘要： A lithography apparatus in which a charged particle ray such as an electron beam or an ion beam is controlled to scan a desired region of a sample and thereby draw a pattern, including a framing pattern memory for storing therein closed framing lines of a pattern to be drawn in the form of dot images, a framing pattern generator for writing the framing lines of the pattern to be drawn into said framing pattern memory in the form of dot images, and a raster scanning circuit for scanning the framing pattern memory having stored therein closed framing lines of the pattern to be drawn and for generating a beam deflection address for drawing the pattern and a beam blanking control signal.
摘要翻译：其中控制诸如电子束或离子束的带电粒子扫描样品的期望区域并由此绘制图案的光刻设备，包括用于存储图案的闭合框线的框架图案存储器以点图像的形式绘制的帧图案生成器，用于以点图像的形式将要绘制的图案的成帧线写入所述成帧图案存储器的成像模式生成器，以及用于扫描已存储在其中的成帧模式存储器的光栅扫描电路闭合要绘制的图案的成帧线和用于产生用于绘制图案的光束偏转地址和光束消隐控制信号。

10. 发明授权

US4577111A Apparatus for electron beam lithography 失效
标题翻译：电子束光刻设备
公开(公告)号：US4577111A
公开(公告)日：1986-03-18
申请号：US516091
申请日：1983-07-22
申请人： Norio Saitou , Susumu Ozasa , Takashi Matsuzaka
发明人： Norio Saitou , Susumu Ozasa , Takashi Matsuzaka
IPC分类号： G03F7/20 , H01J37/30 , H01J37/317 , H01L21/027 , H01L21/30 , H01J37/26
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3007 , H01J37/3174 , H01L21/30 , H01J2237/1505 , H01J2237/152 , H01J2237/30472 , H01J2237/31776
摘要： An apparatus for electron beam lithography comprises at least one mask equipped with a polygonal aperture to be subjected to an electron beam from an electron beam generator, an electron lens system for demagnifying and imaging the polygonal aperture of the mask, and a solenoid coil for electron beam rotation adjustment placed between the mask and the final-stage electron lens.
摘要翻译：用于电子束光刻的装置包括至少一个掩模，其配备有要经受来自电子束发生器的电子束的多边形孔，用于对掩模的多边形孔径进行缩小和成像的电子透镜系统和用于电子的螺线管线圈光束旋转调节放置在掩模和终末电子透镜之间。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式