会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • Evacuation use sample chamber and circuit pattern forming apparatus using the same
    • 疏散使用样品室和使用其的电路图案形成装置
    • US06744054B2
    • 2004-06-01
    • US10002144
    • 2001-12-05
    • Masaki MizuochiYoshimasa FukushimaMitsuru Inoue
    • Masaki MizuochiYoshimasa FukushimaMitsuru Inoue
    • G21K508
    • H01J37/18H01J37/20
    • An evacuation use sample chamber is constituted by a top table 21 which is provided with a recessed portion disposed in a sample chamber main body 10 and for mounting a sample 8 and a groove portion surrounding the recessed portion; a stage 20 which holds the top table 21 and is displaceable in front and back, right and left and up and down directions together with the top table 21; a sample chamber cover 11 which covers above the sample chamber main body 10 including the top table 21; and an evacuation use pipe 21C which communicates with the groove portion and evacuates gas between the bottom face of the sample chamber cover 11 and the top face of the top table 21 including the sample 8. Thereby, an evacuation use sample chamber which performs a stable evacuation and keeps around a sample at a predetermined high vacuum and a circuit pattern forming apparatus which permits a highly accurate pattern drawing over the entire region of the sample are provided.
    • 排气用样品室由顶台21构成,顶台21设置有设置在样品室主体10中的凹部,并且用于安装样品8和围绕凹部的槽部; 保持顶台21并与顶台21一起在前后左右上下方向上移动的台架20; 样品室盖11,其覆盖包括顶台21的样品室主体10的上方; 以及与槽部连通并在样品室盖11的底面与包含样品8的顶台21的顶面之间排出气体的排气用管21C。由此,进行稳定的排气用样品室 抽出并保持预定的高真空下的样品,并且提供允许在样品的整个区域上进行高精度图案绘制的电路图案形成装置。
    • 4. 发明授权
    • Electron beam lithography apparatus
    • 电子束光刻设备
    • US06730916B1
    • 2004-05-04
    • US09691234
    • 2000-10-19
    • Hiroshi TsujiMitsuru InoueNorio SaitouYasuhiro SomedaYoshimasa Fukushima
    • Hiroshi TsujiMitsuru InoueNorio SaitouYasuhiro SomedaYoshimasa Fukushima
    • H01J3720
    • H01J37/09H01J37/20H01J2237/3175H02K11/01H02K41/03
    • An electron beam lithography apparatus of the present invention prevents the electron beam trajectory from being affected by a leakage magnetic field from a permanent magnet which is used as a sample stage guide/driving mechanism. In this electron beam lithography apparatus, an air bearing guide is used as a sample stage guide mechanism, and the stage posture is held by attracting the stage floating on a surface plate to the surface plate side by the permanent magnet. To avoid the leakage magnetic field from the permanent magnet from affecting the electron beam irradiation position on the sample, the permanent magnet is magnetically shielded by a shield member. In addition, to reduce variations in magnetic field above the sample, which are generated when the shield member moves in a leakage magnetic field from the electron lens, another shield member is arranged under the electron lens.
    • 本发明的电子束光刻设备防止电子束轨迹受到用作样品台引导/驱动机构的永久磁铁的泄漏磁场的影响。 在该电子束光刻装置中,使用空气轴承引导件作为样品台引导机构,通过永久磁铁吸引在表面板上浮动到台板侧的台架来保持台阶姿态。 为了避免来自永磁体的泄漏磁场影响样品上的电子束照射位置,永磁体被屏蔽部件磁屏蔽。 此外,为了减小当屏蔽部件在来自电子透镜的泄漏磁场中移动时产生的样品上方的磁场的变化,在电子透镜下方设置有另一个屏蔽部件。
    • 5. 发明授权
    • Semiconductor device inspection and analysis method and its apparatus and a method for manufacturing a semiconductor device
    • 半导体装置检查分析方法及其装置及半导体装置的制造方法
    • US06281024B1
    • 2001-08-28
    • US09322149
    • 1999-05-28
    • Yasuhiro YoshitakeKenji WatanabeYoshimasa FukushimaMinori Noguchi
    • Yasuhiro YoshitakeKenji WatanabeYoshimasa FukushimaMinori Noguchi
    • H01L2100
    • H01L21/67253
    • A method and system for inspecting and/or analyzing semiconductor devices in which particles in a semiconductor wafer which is processed in a semiconductor device manufacturing line are detected. A particle is selected from among the detected particles and the selected particle is etched to expose a cross section of the selected particle. The selected particle whose cross section is exposed has the element thereof analyzed, and after analyzation, the semiconductor wafer is continued to be processed in the semiconductor device manufacturing line. For etching, pattern data having an edge which intersects the selected particle is created and the semiconductor wafer which is coated with a photosensitive material is exposed by a light pattern according to the pattern data so that an edge intersects the selected particle. Thereafter, the etching is carried out to expose the cross section of the selected particle and analyzation is effected.
    • 检测和/或分析其中检测半导体器件制造线中处理的半导体晶片中的粒子的半导体器件的方法和系统。 从检测到的颗粒中选择颗粒,并蚀刻所选择的颗粒以暴露所选择的颗粒的横截面。 所选择的粒子的横截面被暴露,其元素被分析,并且在分析之后,半导体晶片在半导体器件制造线中继续被处理。 为了蚀刻,产生具有与所选粒子相交的边缘的图案数据,并且通过根据图案数据的光图案使被感光材料涂覆的半导体晶片曝光,使得边缘与所选择的粒子相交。 此后,进行蚀刻以暴露所选粒子的横截面并进行分析。