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1. 发明授权

US5449110A Method of soldering lead terminal to substrate 失效
标题翻译：将引线端子焊接到基板的方法
公开(公告)号：US5449110A
公开(公告)日：1995-09-12
申请号：US252697
申请日：1994-06-02
申请人： Hirokazu Tsuji , Shigeo Yamashita , Yasuaki Ohno
发明人： Hirokazu Tsuji , Shigeo Yamashita , Yasuaki Ohno
IPC分类号： H01R43/02 , H05K3/34 , H01R9/16
CPC分类号： H01R12/57 , H05K3/3405 , H05K2201/10386 , H05K2203/0455 , H05K3/3468
摘要： A method of preparing a substrate (1) having terminal electrodes (2, 3) which are provided on its both surfaces and a through hole (4), having a conductive film (5) formed on its inner peripheral surface, provided between the terminal electrodes (2, 3), mounting a lead terminal (9) having a pair of branch portions (9a, 9b) for elastically holding said terminal electrodes (2, 3) therebetween to the substrate (1), dipping the substrate (1) in molten solder from its lower surface (1b), drawing out the substrate (1) and solidifying the molten solder, thereby soldering the lead terminal (9) to the terminal electrodes (2, 3).
摘要翻译：一种制备具有设置在其两个表面上的端子电极（2,3）和具有在其内周面上形成有导电膜（5）的通孔（4）的基板（1）的方法，该端子电极设置在端子电极（2,3），安装具有一对分支部分（9a，9b）的引线端子（9），用于将所述端子电极（2,3）弹性地保持在基板（1）之间，浸渍基板（1）在其下表面（1b）的熔融焊料中，拉出基板（1）并固化熔融焊料，从而将引线端子（9）焊接到端子电极（2,3）。

2. 发明授权

US5181003A Electromagnetic solenoid valve 失效
标题翻译：电磁电磁阀
公开(公告)号：US5181003A
公开(公告)日：1993-01-19
申请号：US696816
申请日：1991-05-07
申请人： Shigeo Yamashita
发明人： Shigeo Yamashita
IPC分类号： H01F7/16 , H01F7/06
CPC分类号： H01F7/06
摘要： An electromagnetic solenoid valve in which a projecting portion disposed on a coil bobbin is abutted against and engaged with a plate so that rotation of the coil bobbin is stopped. As a result of this simple construction, shortcircuiting between the terminal of the coil and the plate can be prevented.
摘要翻译：一种电磁电磁阀，其中设置在线圈架上的突出部分抵靠并与板接合，使得线圈架的旋转停止。作为这种简单结构的结果，可以防止线圈的端子与板之间的短路。

3. 发明授权

US06851846B2 Mixing method, mixing structure, micromixer and microchip having the mixing structure 失效
标题翻译：混合方法，混合结构，具有混合结构的微混合器和微芯片
公开(公告)号：US06851846B2
公开(公告)日：2005-02-08
申请号：US10171920
申请日：2002-06-14
申请人： Yasuhisa Fujii , Shigeo Yamashita , Yasuhiro Sando , Koji Yamamoto , Shunichi Hayamizu
发明人： Yasuhisa Fujii , Shigeo Yamashita , Yasuhiro Sando , Koji Yamamoto , Shunichi Hayamizu
IPC分类号： G01N37/00 , B01F3/08 , B01F5/00 , B01F5/04 , B01F13/00 , B01L3/00 , B01F15/02 , B81B7/04
CPC分类号： B01F13/0062 , B01F5/0453 , B01F5/0458 , B01F13/0066 , B01F13/0093 , B01F2215/0431 , B01L3/5027 , Y10T137/87652
摘要： Disclosed herewith is a microchip having a micromixer therein. The mixromixer employs a mixing or extracting structure having (1) a first flow pass provided at a first level of the microchip; (2) a second flow pass provided at a second level of the microchip, which is different from the first level; (3) a third flow pass having a plurality of sub flow passes separately layered at the first level and each having a first end and second end thereof, each sub flow pass being connected to one of the first and second flow passes at the first end thereof; and (4) a fourth flow pass, provided at the first level, connected to the second ends of the sub flow passes so that, at least connecting portions between the fourth flow pass and the sub flow passes of the third flow pass, an extending direction of the fourth flow pass is substantially identical to those of the sub flow passes. By allowing the first liquid to flow from the first flow pass to the fourth flow pass through the third flow pass while the second liquid to flow from the second flow pass to the fourth flow pass through the third flow pass, the first and second liquids are mixed at the fourth flow pass.
摘要翻译：本文公开的是其中具有微混合器的微芯片。混合混合器采用混合或提取结构，其具有（1）设置在微芯片的第一级的第一流动通道; （2）设置在不同于第一级的微芯片的第二级的第二流程; （3）第三流程，其具有在第一水平处分开层叠的多个子流通道，每个具有第一端和第二端，每个子流通道在第一端连接到第一和第二流动通道之一的; 和（4）设置在第一级的第四流道，连接到副流通道的第二端，使得至少第四流通和次流之间的连接部分通过第三流道，延伸第四流程的方向基本上与副流程相同。通过使第一液体从第一流通流动到第三流动通道，而第二液体从第二流量流动到第四流动通过第三流动通道，第一和第二液体是在第四个流程中混合。

4. 发明授权

US4506366A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4506366A
公开(公告)日：1985-03-19
申请号：US393313
申请日：1982-06-29
申请人： Naoki Chinone , Yasutoshi Kashiwada , Shigeo Yamashita , Kunio Aiki
发明人： Naoki Chinone , Yasutoshi Kashiwada , Shigeo Yamashita , Kunio Aiki
IPC分类号： H01S5/00 , H01S5/16 , H01S5/22 , H01S5/40 , H01S3/19
CPC分类号： H01S5/16 , H01S5/2203 , H01S5/4043
摘要： A semiconductor laser device including at least a laminated region of first, second, third and fourth semiconductor layers on a predetermined semiconductor substrate, wherein the third semiconductor layer has a refractive index smaller than that of the second semiconductor layer; the first and fourth semiconductor layers have a refractive index smaller than that of the second and third semiconductor layers and have a conductivity type opposite that of the second and third semiconductor layers; the forbidden band gap of the first and third semiconductor layers is greater than that of the second semiconductor layer; and at least the second and third semiconductor layers are bent so that the laser light generated inside the second semiconductor layer in the proximity of the laser light-emitting facets generates optical coupling in the third semiconductor layer and is emitted from the crystal facets of the third semiconductor layer. The device of the present invention is effective for increasing the output of semiconductor laser devices.
摘要翻译：一种半导体激光装置，其特征在于，在规定的半导体基板上至少具有第一，第二，第三，第四和第四半导体层的层叠区域，其中，所述第三半导体层的折射率小于所述第二半导体层的折射率; 第一和第四半导体层的折射率小于第二和第三半导体层的折射率，并且具有与第二和第三半导体层相反的导电类型; 第一和第三半导体层的禁带宽大于第二半导体层的禁带宽; 并且至少第二和第三半导体层被弯曲，使得在激光发射面附近在第二半导体层内部产生的激光在第三半导体层中产生光耦合，并从第三半导体层的晶面发射半导体层。本发明的器件对于增加半导体激光器件的输出是有效的。

5. 发明授权

US07309879B2 Semiconductor laser, manufacturing the same and semiconductor laser device 有权
标题翻译：半导体激光器，制造相同和半导体激光器件
公开(公告)号：US07309879B2
公开(公告)日：2007-12-18
申请号：US11350096
申请日：2006-02-09
申请人： Haruki Fukai , Hidetaka Karita , Atsushi Nakamura , Shigeo Yamashita
发明人： Haruki Fukai , Hidetaka Karita , Atsushi Nakamura , Shigeo Yamashita
IPC分类号： H01L29/04
CPC分类号： H01S5/2231 , H01L2224/48091 , H01S5/02216 , H01S5/02248 , H01S5/02284 , H01S5/0421 , H01S5/0425 , H01S5/0683 , H01S5/2214 , H01S2301/173 , H01S2301/176 , H01L2924/00014
摘要： A semiconductor laser element capable of reducing the contact resistance and the thermal resistance and realizing a high reliability is provided. The semiconductor laser element includes: a semiconductor substrate, an active layer formed on the semiconductor substrate, a ridge having a clad layer formed on the active layer and a contact layer formed on the clad layer, an insulation film covering the side surfaces of the clad layer, and an electrode connected to the contact layer, wherein the insulation layer has an end portion in the ridge thickness direction located between the upper surface and the lower surface of the contact layer.
摘要翻译：提供能够降低接触电阻和热阻并实现高可靠性的半导体激光元件。半导体激光元件包括：半导体衬底，形成在半导体衬底上的有源层，在有源层上形成有覆层的脊和形成在覆盖层上的接触层，覆盖覆层侧表面的绝缘膜层和连接到所述接触层的电极，其中所述绝缘层具有位于所述接触层的上表面和下表面之间的脊厚度方向上的端部。

6. 发明申请

US20060131593A1 Semiconductor laser, manufacturing the same and semiconductor laser device 有权
标题翻译：半导体激光器，制造相同和半导体激光器件
公开(公告)号：US20060131593A1
公开(公告)日：2006-06-22
申请号：US11350096
申请日：2006-02-09
申请人： Haruki Fukai , Hidetaka Karita , Atsushi Nakamura , Shigeo Yamashita
发明人： Haruki Fukai , Hidetaka Karita , Atsushi Nakamura , Shigeo Yamashita
IPC分类号： H01L31/12 , H01L27/15
CPC分类号： H01S5/2231 , H01L2224/48091 , H01S5/02216 , H01S5/02248 , H01S5/02284 , H01S5/0421 , H01S5/0425 , H01S5/0683 , H01S5/2214 , H01S2301/173 , H01S2301/176 , H01L2924/00014
摘要： A semiconductor laser element capable of reducing the contact resistance and the thermal resistance and realizing a high reliability is provided. The semiconductor laser element includes: a semiconductor substrate, an active layer formed on the semiconductor substrate, a ridge having a clad layer formed on the active layer and a contact layer formed on the clad layer, an insulation film covering the side surfaces of the clad layer, and an electrode connected to the contact layer, wherein the insulation layer has an end portion in the ridge thickness direction located between the upper surface and the lower surface of the contact layer.
摘要翻译：提供能够降低接触电阻和热阻并实现高可靠性的半导体激光元件。半导体激光元件包括：半导体衬底，形成在半导体衬底上的有源层，在有源层上形成有覆层的脊和形成在覆盖层上的接触层，覆盖覆层侧表面的绝缘膜层和连接到所述接触层的电极，其中所述绝缘层具有位于所述接触层的上表面和下表面之间的脊厚度方向上的端部。

7. 发明授权

US5043638A Dynamic focus adjusting voltage generating circuit 失效
标题翻译：动态聚焦调整电压发生电路
公开(公告)号：US5043638A
公开(公告)日：1991-08-27
申请号：US436714
申请日：1989-11-15
申请人： Shigeo Yamashita
发明人： Shigeo Yamashita
IPC分类号： H04N3/26
CPC分类号： H04N3/26
摘要： A dynamic focus adjusting voltage generating circuit for generating a dynamic focus adjusting voltage to be applied to a CRT for displaying images. The circuit includes a horizontal output circuit for supplying a sawtooth wave current to the horizontal deflection coil of the CRT, and a series circuit connected in parallel with the terminals of the horizontal output circuit and consisting of a capacitor and an inductance coil connected in series with each other. An electric potential developed at a node between the capacitance and the inductance coil is used as the dynamic focus adjusting voltage.
摘要翻译：一种动态聚焦调整电压产生电路，用于产生要施加到用于显示图像的CRT的动态聚焦调节电压。该电路包括用于向CRT的水平偏转线圈提供锯齿波电流的水平输出电路，以及与水平输出电路的端子并联连接的串联电路，由电容器和电感线圈串联连接彼此。在电容和电感线圈之间的节点处产生的电位用作动态焦点调整电压。

8. 发明授权

US4780879A Semiconductor laser device having little astigmatism 失效
标题翻译：具有很少散光的半导体激光器件
公开(公告)号：US4780879A
公开(公告)日：1988-10-25
申请号：US16410
申请日：1987-02-19
申请人： Naoki Chinone , Shigeo Yamashita , Shin'ichi Nakatsuka , Akemi Yamanaka , Yuichi Ono , Toshihiro Kawano , Kazuhisa Uomi , Takashi Kajimura , Toshiaki Tanaka , Kunio Aiki
发明人： Naoki Chinone , Shigeo Yamashita , Shin'ichi Nakatsuka , Akemi Yamanaka , Yuichi Ono , Toshihiro Kawano , Kazuhisa Uomi , Takashi Kajimura , Toshiaki Tanaka , Kunio Aiki
IPC分类号： H01S5/00 , H01S3/00 , H01S5/026 , H01S5/10 , H01S3/19
CPC分类号： H01S5/1082 , H01S5/0267 , H01S5/1064
摘要： A semiconductor laser device having a stripe-shaped active region defined between a pair of end surfaces, at least one of the end surfaces having a curved cross-section in a plane parallel to the active region with a radius of curvature from 10 to 300 .mu.m, the stripe of the active region having such a width that a single transverse mode and a multi-longitudinal mode are allowed. The laser beam emitted from this laser can have little astigmatism and small spot size.
摘要翻译：一种半导体激光器件，其具有限定在一对端面之间的条状有源区域，所述端面中的至少一个在平行于有源区域的平面中具有弯曲的横截面，其曲率半径为10至300μm m，有源区域的条纹具有允许单横模和多纵模的宽度。从该激光器发射的激光束可以具有很少的散光和小的斑点尺寸。

9. 发明授权

US4337443A Semiconductor laser device with facet passivation film 失效
标题翻译：半导体激光器件具有刻面钝化膜
公开(公告)号：US4337443A
公开(公告)日：1982-06-29
申请号：US124266
申请日：1980-02-25
申请人： Jun-ichi Umeda , Toshikazu Shimada , Michiharu Nakamura , Yoshifumi Katayama , Takashi Kajimura , Shigeo Yamashita
发明人： Jun-ichi Umeda , Toshikazu Shimada , Michiharu Nakamura , Yoshifumi Katayama , Takashi Kajimura , Shigeo Yamashita
IPC分类号： H01S5/00 , H01S5/028 , H01S3/19
CPC分类号： H01S5/028 , H01S5/0282 , H01S5/0283
摘要： A semiconductor laser element is disclosed which includes a film of an amorphous material deposited on at least an optical output facet of the laser element and contains silicon and hydrogen as the indispensable components. The thickness of the amorphous film is preferably selected in the vicinity of (.lambda./4).multidot.m where .lambda. represents wavelength of laser light in the amorphous film and m represents an odd integer. A film of a transparent insulation material can be deposited over the amorphous film thereby to constitute a composite film. With the disclosed structure of the semiconductor laser element, increasement in a threshold current of the laser element can be suppressed to a minimum, while a maximum optical output power can be increased.
摘要翻译：公开了一种半导体激光元件，其包括沉积在激光元件的至少光学输出面上的非晶材料的膜，并且包含硅和氢作为不可缺少的成分。优选在（λ/ 4）×m附近选择非晶膜的厚度，其中λ表示非晶膜中的激光的波长，m表示奇整数。可以将非透明绝缘材料的膜沉积在非晶膜上，从而构成复合膜。利用所公开的半导体激光元件的结构，可以将激光元件的阈值电流的增加抑制到最小，同时可以提高最大光输出功率。

10. 发明授权

US4288757A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4288757A
公开(公告)日：1981-09-08
申请号：US56360
申请日：1979-07-10
申请人： Takashi Kajimura , Motohisa Hirao , Michiharu Nakamura , Takao Kuroda , Shigeo Yamashita , Jun-Ichi Umeda
发明人： Takashi Kajimura , Motohisa Hirao , Michiharu Nakamura , Takao Kuroda , Shigeo Yamashita , Jun-Ichi Umeda
IPC分类号： H01L21/208 , H01S5/00 , H01S5/22 , H01S5/323 , H01S3/19
CPC分类号： H01L33/0025 , H01S5/22 , H01S5/32308 , H01S5/32325
摘要： In certain applications, it is desirable to have a semiconductor laser device having shorter wave lengths of oscillation than are possible with conventional semiconductor lasers. To accomplish this, a semiconductor laser device is formed having a double-hetero structure, which comprises a semiconductor substrate composed of a GaAsP crystal, a first cladding layer formed on the substrate and composed of a GaAlAsP crystal of one conducting type, an active layer formed on the first cladding layer and composed of GaInAsP crystal, and a second cladding layer formed on the active layer and composed of a GaAlAsP crystal of the conducting type reverse to that of the first cladding layer. The cladding layers disposed on both sides of the active layer have a lower refractivity and a larger band gap than the active layer.
摘要翻译：在某些应用中，期望具有比常规半导体激光器可能的波长波长更短的半导体激光器件。为了实现这一点，形成具有双异质结构的半导体激光器件，其包括由GaAsP晶体构成的半导体衬底，形成在衬底上并由一种导电类型的GaAlAsP晶体构成的第一覆层，活性层形成在第一包层上并由GaInAsP晶体构成;以及第二覆层，形成在有源层上并由与第一覆层相反的导电类型的GaAlAsP晶体构成。设置在有源层两侧的覆层具有比活性层更低的折射率和更大的带隙。

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