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1. 发明授权

US07309879B2 Semiconductor laser, manufacturing the same and semiconductor laser device 有权
标题翻译：半导体激光器，制造相同和半导体激光器件
公开(公告)号：US07309879B2
公开(公告)日：2007-12-18
申请号：US11350096
申请日：2006-02-09
申请人： Haruki Fukai , Hidetaka Karita , Atsushi Nakamura , Shigeo Yamashita
发明人： Haruki Fukai , Hidetaka Karita , Atsushi Nakamura , Shigeo Yamashita
IPC分类号： H01L29/04
CPC分类号： H01S5/2231 , H01L2224/48091 , H01S5/02216 , H01S5/02248 , H01S5/02284 , H01S5/0421 , H01S5/0425 , H01S5/0683 , H01S5/2214 , H01S2301/173 , H01S2301/176 , H01L2924/00014
摘要： A semiconductor laser element capable of reducing the contact resistance and the thermal resistance and realizing a high reliability is provided. The semiconductor laser element includes: a semiconductor substrate, an active layer formed on the semiconductor substrate, a ridge having a clad layer formed on the active layer and a contact layer formed on the clad layer, an insulation film covering the side surfaces of the clad layer, and an electrode connected to the contact layer, wherein the insulation layer has an end portion in the ridge thickness direction located between the upper surface and the lower surface of the contact layer.
摘要翻译：提供能够降低接触电阻和热阻并实现高可靠性的半导体激光元件。半导体激光元件包括：半导体衬底，形成在半导体衬底上的有源层，在有源层上形成有覆层的脊和形成在覆盖层上的接触层，覆盖覆层侧表面的绝缘膜层和连接到所述接触层的电极，其中所述绝缘层具有位于所述接触层的上表面和下表面之间的脊厚度方向上的端部。

2. 发明申请

US20060131593A1 Semiconductor laser, manufacturing the same and semiconductor laser device 有权
标题翻译：半导体激光器，制造相同和半导体激光器件
公开(公告)号：US20060131593A1
公开(公告)日：2006-06-22
申请号：US11350096
申请日：2006-02-09
申请人： Haruki Fukai , Hidetaka Karita , Atsushi Nakamura , Shigeo Yamashita
发明人： Haruki Fukai , Hidetaka Karita , Atsushi Nakamura , Shigeo Yamashita
IPC分类号： H01L31/12 , H01L27/15
CPC分类号： H01S5/2231 , H01L2224/48091 , H01S5/02216 , H01S5/02248 , H01S5/02284 , H01S5/0421 , H01S5/0425 , H01S5/0683 , H01S5/2214 , H01S2301/173 , H01S2301/176 , H01L2924/00014
摘要： A semiconductor laser element capable of reducing the contact resistance and the thermal resistance and realizing a high reliability is provided. The semiconductor laser element includes: a semiconductor substrate, an active layer formed on the semiconductor substrate, a ridge having a clad layer formed on the active layer and a contact layer formed on the clad layer, an insulation film covering the side surfaces of the clad layer, and an electrode connected to the contact layer, wherein the insulation layer has an end portion in the ridge thickness direction located between the upper surface and the lower surface of the contact layer.
摘要翻译：提供能够降低接触电阻和热阻并实现高可靠性的半导体激光元件。半导体激光元件包括：半导体衬底，形成在半导体衬底上的有源层，在有源层上形成有覆层的脊和形成在覆盖层上的接触层，覆盖覆层侧表面的绝缘膜层和连接到所述接触层的电极，其中所述绝缘层具有位于所述接触层的上表面和下表面之间的脊厚度方向上的端部。

3. 发明授权

US5043638A Dynamic focus adjusting voltage generating circuit 失效
标题翻译：动态聚焦调整电压发生电路
公开(公告)号：US5043638A
公开(公告)日：1991-08-27
申请号：US436714
申请日：1989-11-15
申请人： Shigeo Yamashita
发明人： Shigeo Yamashita
IPC分类号： H04N3/26
CPC分类号： H04N3/26
摘要： A dynamic focus adjusting voltage generating circuit for generating a dynamic focus adjusting voltage to be applied to a CRT for displaying images. The circuit includes a horizontal output circuit for supplying a sawtooth wave current to the horizontal deflection coil of the CRT, and a series circuit connected in parallel with the terminals of the horizontal output circuit and consisting of a capacitor and an inductance coil connected in series with each other. An electric potential developed at a node between the capacitance and the inductance coil is used as the dynamic focus adjusting voltage.
摘要翻译：一种动态聚焦调整电压产生电路，用于产生要施加到用于显示图像的CRT的动态聚焦调节电压。该电路包括用于向CRT的水平偏转线圈提供锯齿波电流的水平输出电路，以及与水平输出电路的端子并联连接的串联电路，由电容器和电感线圈串联连接彼此。在电容和电感线圈之间的节点处产生的电位用作动态焦点调整电压。

4. 发明授权

US4780879A Semiconductor laser device having little astigmatism 失效
标题翻译：具有很少散光的半导体激光器件
公开(公告)号：US4780879A
公开(公告)日：1988-10-25
申请号：US16410
申请日：1987-02-19
申请人： Naoki Chinone , Shigeo Yamashita , Shin'ichi Nakatsuka , Akemi Yamanaka , Yuichi Ono , Toshihiro Kawano , Kazuhisa Uomi , Takashi Kajimura , Toshiaki Tanaka , Kunio Aiki
发明人： Naoki Chinone , Shigeo Yamashita , Shin'ichi Nakatsuka , Akemi Yamanaka , Yuichi Ono , Toshihiro Kawano , Kazuhisa Uomi , Takashi Kajimura , Toshiaki Tanaka , Kunio Aiki
IPC分类号： H01S5/00 , H01S3/00 , H01S5/026 , H01S5/10 , H01S3/19
CPC分类号： H01S5/1082 , H01S5/0267 , H01S5/1064
摘要： A semiconductor laser device having a stripe-shaped active region defined between a pair of end surfaces, at least one of the end surfaces having a curved cross-section in a plane parallel to the active region with a radius of curvature from 10 to 300 .mu.m, the stripe of the active region having such a width that a single transverse mode and a multi-longitudinal mode are allowed. The laser beam emitted from this laser can have little astigmatism and small spot size.
摘要翻译：一种半导体激光器件，其具有限定在一对端面之间的条状有源区域，所述端面中的至少一个在平行于有源区域的平面中具有弯曲的横截面，其曲率半径为10至300μm m，有源区域的条纹具有允许单横模和多纵模的宽度。从该激光器发射的激光束可以具有很少的散光和小的斑点尺寸。

5. 发明授权

US5449110A Method of soldering lead terminal to substrate 失效
标题翻译：将引线端子焊接到基板的方法
公开(公告)号：US5449110A
公开(公告)日：1995-09-12
申请号：US252697
申请日：1994-06-02
申请人： Hirokazu Tsuji , Shigeo Yamashita , Yasuaki Ohno
发明人： Hirokazu Tsuji , Shigeo Yamashita , Yasuaki Ohno
IPC分类号： H01R43/02 , H05K3/34 , H01R9/16
CPC分类号： H01R12/57 , H05K3/3405 , H05K2201/10386 , H05K2203/0455 , H05K3/3468
摘要： A method of preparing a substrate (1) having terminal electrodes (2, 3) which are provided on its both surfaces and a through hole (4), having a conductive film (5) formed on its inner peripheral surface, provided between the terminal electrodes (2, 3), mounting a lead terminal (9) having a pair of branch portions (9a, 9b) for elastically holding said terminal electrodes (2, 3) therebetween to the substrate (1), dipping the substrate (1) in molten solder from its lower surface (1b), drawing out the substrate (1) and solidifying the molten solder, thereby soldering the lead terminal (9) to the terminal electrodes (2, 3).
摘要翻译：一种制备具有设置在其两个表面上的端子电极（2,3）和具有在其内周面上形成有导电膜（5）的通孔（4）的基板（1）的方法，该端子电极设置在端子电极（2,3），安装具有一对分支部分（9a，9b）的引线端子（9），用于将所述端子电极（2,3）弹性地保持在基板（1）之间，浸渍基板（1）在其下表面（1b）的熔融焊料中，拉出基板（1）并固化熔融焊料，从而将引线端子（9）焊接到端子电极（2,3）。

6. 发明授权

US4337443A Semiconductor laser device with facet passivation film 失效
标题翻译：半导体激光器件具有刻面钝化膜
公开(公告)号：US4337443A
公开(公告)日：1982-06-29
申请号：US124266
申请日：1980-02-25
申请人： Jun-ichi Umeda , Toshikazu Shimada , Michiharu Nakamura , Yoshifumi Katayama , Takashi Kajimura , Shigeo Yamashita
发明人： Jun-ichi Umeda , Toshikazu Shimada , Michiharu Nakamura , Yoshifumi Katayama , Takashi Kajimura , Shigeo Yamashita
IPC分类号： H01S5/00 , H01S5/028 , H01S3/19
CPC分类号： H01S5/028 , H01S5/0282 , H01S5/0283
摘要： A semiconductor laser element is disclosed which includes a film of an amorphous material deposited on at least an optical output facet of the laser element and contains silicon and hydrogen as the indispensable components. The thickness of the amorphous film is preferably selected in the vicinity of (.lambda./4).multidot.m where .lambda. represents wavelength of laser light in the amorphous film and m represents an odd integer. A film of a transparent insulation material can be deposited over the amorphous film thereby to constitute a composite film. With the disclosed structure of the semiconductor laser element, increasement in a threshold current of the laser element can be suppressed to a minimum, while a maximum optical output power can be increased.
摘要翻译：公开了一种半导体激光元件，其包括沉积在激光元件的至少光学输出面上的非晶材料的膜，并且包含硅和氢作为不可缺少的成分。优选在（λ/ 4）×m附近选择非晶膜的厚度，其中λ表示非晶膜中的激光的波长，m表示奇整数。可以将非透明绝缘材料的膜沉积在非晶膜上，从而构成复合膜。利用所公开的半导体激光元件的结构，可以将激光元件的阈值电流的增加抑制到最小，同时可以提高最大光输出功率。

7. 发明授权

US4288757A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4288757A
公开(公告)日：1981-09-08
申请号：US56360
申请日：1979-07-10
申请人： Takashi Kajimura , Motohisa Hirao , Michiharu Nakamura , Takao Kuroda , Shigeo Yamashita , Jun-Ichi Umeda
发明人： Takashi Kajimura , Motohisa Hirao , Michiharu Nakamura , Takao Kuroda , Shigeo Yamashita , Jun-Ichi Umeda
IPC分类号： H01L21/208 , H01S5/00 , H01S5/22 , H01S5/323 , H01S3/19
CPC分类号： H01L33/0025 , H01S5/22 , H01S5/32308 , H01S5/32325
摘要： In certain applications, it is desirable to have a semiconductor laser device having shorter wave lengths of oscillation than are possible with conventional semiconductor lasers. To accomplish this, a semiconductor laser device is formed having a double-hetero structure, which comprises a semiconductor substrate composed of a GaAsP crystal, a first cladding layer formed on the substrate and composed of a GaAlAsP crystal of one conducting type, an active layer formed on the first cladding layer and composed of GaInAsP crystal, and a second cladding layer formed on the active layer and composed of a GaAlAsP crystal of the conducting type reverse to that of the first cladding layer. The cladding layers disposed on both sides of the active layer have a lower refractivity and a larger band gap than the active layer.
摘要翻译：在某些应用中，期望具有比常规半导体激光器可能的波长波长更短的半导体激光器件。为了实现这一点，形成具有双异质结构的半导体激光器件，其包括由GaAsP晶体构成的半导体衬底，形成在衬底上并由一种导电类型的GaAlAsP晶体构成的第一覆层，活性层形成在第一包层上并由GaInAsP晶体构成;以及第二覆层，形成在有源层上并由与第一覆层相反的导电类型的GaAlAsP晶体构成。设置在有源层两侧的覆层具有比活性层更低的折射率和更大的带隙。

8. 发明授权

US4257011A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4257011A
公开(公告)日：1981-03-17
申请号：US929013
申请日：1978-07-28
申请人： Michiharu Nakamura , Shigeo Yamashita , Takao Kuroda , Jun-ichi Umeda
发明人： Michiharu Nakamura , Shigeo Yamashita , Takao Kuroda , Jun-ichi Umeda
IPC分类号： H01S5/12 , H01S5/223 , H01S3/19
CPC分类号： H01S5/12 , H01S5/2232 , H01S5/2234
摘要： A semiconductor laser device has stabilized longitudinal and transverse modes without excess optical noise for a modulated signal generated by mode interaction. The fundamental construction of the semiconductor laser device comprises a structure wherein a first semiconductor layer is sandwiched between second and third semiconductor layers which have a greater band gap and lower index of refraction than the first semiconductor layer. That region of at least one of the second and third semiconductor layers which is remote from the first semiconductor layer corresponds substantially to a radiation region and serves as a light non-absorptive region in the shape of a stripe. A semiconductor layer has portions lying on both sides of the semiconductor layer remote from the first semiconductor layer and has an effective complex refractive-index for laser light discontinuous at both ends of the semiconductor layer remote from the first semiconductor layer. Periodic corrugations which intersect orthogonally to the lengthwise direction of the stripe-shaped light non-absorptive region are formed in at least one interface of the semiconductor layers in a manner to include at least a region corresponding to the light non-absorptive region.
摘要翻译：半导体激光器件对于通过模式相互作用产生的调制信号具有稳定的纵向和横向模式而没有过多的光学噪声。半导体激光器件的基本结构包括其中第一半导体层夹在具有比第一半导体层更大的带隙和较低的折射率的第二和第三半导体层之间的结构。远离第一半导体层的第二和第三半导体层中的至少一个的区域基本上对应于辐射区域，并且用作条纹形状的光非吸收区域。半导体层具有位于远离第一半导体层的半导体层的两侧的部分，并且对于远离第一半导体层的半导体层的两端处的不连续的激光具有有效的复合折射率。以至少包括对应于光非吸收区域的区域的方式，在半导体层的至少一个界面中形成与条形光非吸收区域的长度方向垂直相交的周期波纹。

9. 发明授权

US5181003A Electromagnetic solenoid valve 失效
标题翻译：电磁电磁阀
公开(公告)号：US5181003A
公开(公告)日：1993-01-19
申请号：US696816
申请日：1991-05-07
申请人： Shigeo Yamashita
发明人： Shigeo Yamashita
IPC分类号： H01F7/16 , H01F7/06
CPC分类号： H01F7/06
摘要： An electromagnetic solenoid valve in which a projecting portion disposed on a coil bobbin is abutted against and engaged with a plate so that rotation of the coil bobbin is stopped. As a result of this simple construction, shortcircuiting between the terminal of the coil and the plate can be prevented.
摘要翻译：一种电磁电磁阀，其中设置在线圈架上的突出部分抵靠并与板接合，使得线圈架的旋转停止。作为这种简单结构的结果，可以防止线圈的端子与板之间的短路。

10. 发明授权

US07052189B2 Optical electronic device 有权
公开(公告)号：US07052189B2
公开(公告)日：2006-05-30
申请号：US10294698
申请日：2002-11-15
申请人： Hiroshi Naka , Masaaki Tsuchiya , Shigeo Yamashita
发明人： Hiroshi Naka , Masaaki Tsuchiya , Shigeo Yamashita
IPC分类号： G02B6/42
CPC分类号： G02B6/4201 , G02B6/4202 , G02B6/4204 , G02B6/4239 , G02B6/4243 , G02B6/4244 , G02B6/4245 , G02B6/4248 , G02B6/4251 , G02B6/4265 , G02B6/4274 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48465 , H01L2224/48471 , H01L2224/73265 , H01L2924/00014 , H01L2924/30107 , H01L2924/00 , H01L2224/4554
摘要： The present invention provides an optical electronic device which includes a package casing made of plastic, a plurality of metal-made leads which extend between the inside and the outside of the package casing and form electrode terminals at external portions thereof, a lead base which is arranged in an inner bottom of the package and is integrally formed with at least one or the plurality of leads, a support substrate which is fixed onto the lead base and includes a conductive layer of a given pattern on an upper surface thereof, an optical element which is fixed onto the support substrate, an optical fiber which extends between the inside and the outside of the package casing and has an inner end thereof to face the optical element to perform transmission and reception of light between the optical fiber and the optical element, one or a plurality of electronic parts fixed to the leads in the inside of the package casing, and conductive wires which electrically connect electrodes of the optical element, electrodes of the electronic parts, the conductive layer of the support substrate and the leads to each other when necessary, wherein the electronic part includes one or a plurality of upper electrodes on an upper surface thereof and the upper electrodes are connected to other conductive portions through conductive wires. Due to such a constitution, the reliability of mounting electronic parts can be enhanced.

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