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1. 发明授权

US4780879A Semiconductor laser device having little astigmatism 失效
标题翻译：具有很少散光的半导体激光器件
公开(公告)号：US4780879A
公开(公告)日：1988-10-25
申请号：US16410
申请日：1987-02-19
申请人： Naoki Chinone , Shigeo Yamashita , Shin'ichi Nakatsuka , Akemi Yamanaka , Yuichi Ono , Toshihiro Kawano , Kazuhisa Uomi , Takashi Kajimura , Toshiaki Tanaka , Kunio Aiki
发明人： Naoki Chinone , Shigeo Yamashita , Shin'ichi Nakatsuka , Akemi Yamanaka , Yuichi Ono , Toshihiro Kawano , Kazuhisa Uomi , Takashi Kajimura , Toshiaki Tanaka , Kunio Aiki
IPC分类号： H01S5/00 , H01S3/00 , H01S5/026 , H01S5/10 , H01S3/19
CPC分类号： H01S5/1082 , H01S5/0267 , H01S5/1064
摘要： A semiconductor laser device having a stripe-shaped active region defined between a pair of end surfaces, at least one of the end surfaces having a curved cross-section in a plane parallel to the active region with a radius of curvature from 10 to 300 .mu.m, the stripe of the active region having such a width that a single transverse mode and a multi-longitudinal mode are allowed. The laser beam emitted from this laser can have little astigmatism and small spot size.
摘要翻译：一种半导体激光器件，其具有限定在一对端面之间的条状有源区域，所述端面中的至少一个在平行于有源区域的平面中具有弯曲的横截面，其曲率半径为10至300μm m，有源区域的条纹具有允许单横模和多纵模的宽度。从该激光器发射的激光束可以具有很少的散光和小的斑点尺寸。

2. 发明授权

US4811354A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4811354A
公开(公告)日：1989-03-07
申请号：US895843
申请日：1986-08-12
申请人： Kazuhisa Uomi , Naoki Chinone , Misuzu Yoshizawa , Shin'ichi Nakatsuka , Takashi Kajimura , Yuichi Ono
发明人： Kazuhisa Uomi , Naoki Chinone , Misuzu Yoshizawa , Shin'ichi Nakatsuka , Takashi Kajimura , Yuichi Ono
IPC分类号： H01S5/10 , H01S5/343 , H01S5/40 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/4031 , H01S5/10 , H01S5/1032 , H01S5/3432
摘要： A phased array semiconductor laser has two or more luminous stripes. The number, width or center to center spacing of stripes is made different between the center region and neighborhood of facets of the laser so that the laser may oscillate stably in the fundamental supermode with an optical output of 100 mW or more.
摘要翻译：相控阵半导体激光器具有两个或更多个发光条纹。条纹的数量，宽度或中心到中心的间隔在激光器的小面的中心区域和邻近区域之间是不同的，使得激光器可以以100mW或更大的光学输出在基本超声波中稳定地振荡。

3. 发明授权

US5136601A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5136601A
公开(公告)日：1992-08-04
申请号：US379672
申请日：1989-07-13
申请人： Takashi Kajimura , Naoki Chinone , Yuichi Ono , Shinichi Nakatsuka , Kazuhisa Uomi , Toshihiro Kawano , Tsukuru Ohtoshi , Yasutoshi Kashiwada
发明人： Takashi Kajimura , Naoki Chinone , Yuichi Ono , Shinichi Nakatsuka , Kazuhisa Uomi , Toshihiro Kawano , Tsukuru Ohtoshi , Yasutoshi Kashiwada
IPC分类号： H01S5/10 , H01S5/227
CPC分类号： H01S5/10 , H01S5/227 , H01S5/1064 , H01S5/2275
摘要： A semiconductor laser having a stripe-like lasing region, wherein the structure of the lasing region such as the mechanism of optical guiding of the lateral mode control structure is made different between the central portion in the lasing region and portions close to facets, in order to reduce optical feedback induced noise and astigmatism, and to facilitate the manufacture thereof.
摘要翻译：一种具有条状激光区域的半导体激光器，其中激光区域的结构（例如横向模式控制结构的光引导机构）在激光区域的中心部分和靠近刻面的部分之间按顺序以减少光学反馈引起的噪声和散光，并促进其制造。

4. 发明授权

US4821275A Laser diode 失效
标题翻译：激光二极管
公开(公告)号：US4821275A
公开(公告)日：1989-04-11
申请号：US140755
申请日：1988-01-04
申请人： Shinichi Nakatsuka , Naoki Chinone , Kazuhisa Uomi , Yuichi Ono , Takashi Kajimura
发明人： Shinichi Nakatsuka , Naoki Chinone , Kazuhisa Uomi , Yuichi Ono , Takashi Kajimura
IPC分类号： H01S5/00 , H01S5/16 , H01S5/223 , H01S3/19
CPC分类号： H01S5/16 , H01S5/2232 , H01S5/2234
摘要： A stripe groove is formed on a semiconductor substrate and buried by lamination of multiple semiconductor layers, and a channel being lower than the substrate surface is formed outside the groove near at least one mirror edge, such that a laser diode with decreased astigmatism can be produced.
摘要翻译：在半导体基板上形成条纹槽，通过层叠多个半导体层而被掩埋，并且在至少一个反射镜边缘附近形成低于基板表面的沟道，从而可以产生具有减小的散光的激光二极管。

5. 发明授权

US4797891A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4797891A
公开(公告)日：1989-01-10
申请号：US941842
申请日：1986-12-15
申请人： Kazuhisa Uomi , Misuzu Yoshizawa , Yuichi Ono , Naoki Chinone , Takashi Kajimura
发明人： Kazuhisa Uomi , Misuzu Yoshizawa , Yuichi Ono , Naoki Chinone , Takashi Kajimura
IPC分类号： H01S5/00 , H01S5/042 , H01S5/06 , H01S5/062 , H01S5/40 , H01S3/19
CPC分类号： H01S5/4031 , H01S5/06243 , H01S5/4075
摘要： The present invention relates to phased-array semiconductor lasers having a radiation angle turnable by oscillating independently and stably between the fundamental supermode and the higher order supermode and switching the radiation angles by utilizing the property that their radiation angles are different.Optical switching and optical scanning, that have been difficult in the prior art, can be made more easily by use of a semiconductor laser having a turnable radiation angle.The objection of the present invention can be accomplished by disposing separate electrodes at the emission stripes and at the gap between the stripes in the phased-array semiconductor laser.Further, the present invention may be accomplished by dividing at least one stripe electrode in order to form electrode regions. When the current is applied to all the electrodes, oscillation occurs in the highest order mode and the beam is emitted in another direction. When the current is applied to only the electrode exclusive of the electrode regions, oscillation occurs in the fundamental mode and the beam is emitted in a direction vertical to a facet.Moreover, the present invention may be accomplished by disposing electrodes outside the stripe regions of the phased-array semiconductor laser so that oscillation occurs in the fundamental supermode when the electric field is applied to the electrodes and in the higher order mode when the electric field is not applied.
摘要翻译：本发明涉及通过利用其辐射角不同的性质，通过在基本超模和高阶超模之间独立且稳定地振荡而切换辐射角的相位阵列半导体激光器。通过使用具有可转动的辐射角的半导体激光器，可以更容易地使现有技术中难以进行的光学切换和光学扫描。本发明的反对可以通过在相控阵半导体激光器中的发射条和条之间的间隙设置分开的电极来实现。此外，本发明可以通过划分至少一个条状电极来形成电极区域来实现。当电流施加到所有电极时，在最高阶模式下发生振荡，并且光束在另一个方向上发射。当只将电流施加到不包括电极区域的电极时，基本模式发生振荡，并且在垂直于小面的方向上发射光束。此外，本发明可以通过将电极设置在相控阵半导体激光器的条纹区域之外来实现，使得当电场施加到电极时在基本超模中发生振荡，并且当电场为没有申请。

6. 发明授权

US4752933A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4752933A
公开(公告)日：1988-06-21
申请号：US817038
申请日：1986-01-08
申请人： Kazuhisa Uomi , Shinichi Nakatsuka , Takashi Kajimura , Yuichi Ono , Naoki Chinone
发明人： Kazuhisa Uomi , Shinichi Nakatsuka , Takashi Kajimura , Yuichi Ono , Naoki Chinone
IPC分类号： H01S5/00 , H01S5/12 , H01S5/20 , H01S5/223 , H01S5/34 , H01S3/19 , H01L27/12 , H01L45/00 , H01S3/08
CPC分类号： H01S5/20 , H01S5/12 , H01S5/2059 , H01S5/2232 , H01S5/3428
摘要： A semiconductor laser which has a super lattice layer between a substrate and a light confinement layer, and in which a portion of the super lattice layer other than a portion corresponding to the radiation region of an active layer is disordered to block the electric current. The disordering is effected in a self-aligned manner to simplify the manufacturing process. Therefore, and element which oscillates and maintains a fundamental transverse mode is obtained with a good yield.
摘要翻译：一种半导体激光器，其在基板和光限制层之间具有超晶格层，并且其中除了与有源层的辐射区域对应的部分之外的超晶格层的一部分无序以阻挡电流。无序化以自对准的方式进行，以简化制造过程。因此，以良好的产率获得振荡并保持基本横向模式的元件。

7. 发明授权

US4800565A Semiconductor laser device having high optical intensity and reliability 失效
标题翻译：具有高光强度和可靠性的半导体激光器件
公开(公告)号：US4800565A
公开(公告)日：1989-01-24
申请号：US94602
申请日：1987-09-09
申请人： Misuzu Yoshizawa , Kazuhisa Uomi , Toshihiro Kawano , Yuichi Ono , Takashi Kajimura
发明人： Misuzu Yoshizawa , Kazuhisa Uomi , Toshihiro Kawano , Yuichi Ono , Takashi Kajimura
IPC分类号： H01S5/00 , H01S5/042 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： H01S5/32 , H01S5/2231 , H01S5/32308 , H01S5/2004 , H01S5/3211
摘要： Disclosed is a semiconductor laser wherein an interface layer is provided on an upper cladding layer formed on an active layer, the interface layer having a smaller Al mole ratio than that of the upper cladding layer, thereby preventing oxidation of the semiconductor surface which is exposed to the atmosphere, and thus improving the crystallizability of a semiconductor layer which is to be formed subsequently. By setting the refractive index of this semiconductor layer so as to be smaller than that of the upper cladding layer, light can be confined in the active layer at increased efficiency.
摘要翻译：公开了一种半导体激光器，其中界面层设置在形成于有源层上的上包层上，该界面层具有比上包层更低的Al摩尔比，从而防止暴露于气氛，从而提高将要形成的半导体层的结晶性。通过将该半导体层的折射率设定为小于上包层的折射率，可以以更高的效率将光限制在有源层中。

8. 发明授权

US4961197A Semiconductor laser device 失效
公开(公告)号：US4961197A
公开(公告)日：1990-10-02
申请号：US339125
申请日：1989-04-14
申请人： Toshiaki Tanaka , Takashi Kajimura , Toshihiro Kawano , Yuichi Ono
发明人： Toshiaki Tanaka , Takashi Kajimura , Toshihiro Kawano , Yuichi Ono
IPC分类号： H01S5/065 , H01S5/22 , H01S5/223 , H01S5/30 , H01S5/34 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/2231 , H01S5/34 , H01S5/0658 , H01S5/2219 , H01S5/3086 , H01S5/3432
摘要： A high-power low-noise semiconductor laser device required for light sources for an erasable optical disc is a self-sustained pulsating semiconductor laser device in which an MQW structure is used for an active layer, and thus a kink output power and a light output power by which the self-pulsation is enabled are increased to 10 mW or more and noise is reduced. Another semiconductor laser device of a self-pulsation type has impurities that are doped in the active layer to reduce the self-pulsating frequency to obtain a low-noise characteristic even if higher optical feedback occurs. 259

9. 发明授权

US4740976A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4740976A
公开(公告)日：1988-04-26
申请号：US592956
申请日：1984-03-23
申请人： Takashi Kajimura , Shinichi Nakatuka , Naoki Chinone , Michiharu Nakamura , Yuichi Ono
发明人： Takashi Kajimura , Shinichi Nakatuka , Naoki Chinone , Michiharu Nakamura , Yuichi Ono
IPC分类号： H01S5/223 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/2231 , H01S5/34313 , H01S5/3432
摘要： A semiconductor laser device comprises a semiconductor layer stack consisting of a first clad layer, an active layer, and a second clad layer which are successively stacked on a semiconductor substrate, and a light absorbing layer and a current blocking layer which are stacked on the second clad layer; the semiconductor assembly including a stripe shaped groove which extends from the surface of the semiconductor layer stack to the surface or interior of the second cladding layer, and another semiconductor layer having a forbidden band width greater than the active layer and the same conductivity type as the second clad layer which is embedded into the groove by chemical vapor deposition method.
摘要翻译：半导体激光器件包括由半导体衬底上依次层叠的第一覆盖层，有源层和第二覆盖层构成的半导体层堆叠，以及层叠在第二覆盖层上的光吸收层和电流阻挡层包层所述半导体组件包括从所述半导体层堆叠的表面延伸到所述第二包层的表面或内部的条形槽，以及具有比所述有源层大的禁带宽度和与所述有源层相同的导电类型的另一半导体层通过化学气相沉积法嵌入凹槽中的第二覆层。

10. 发明授权

US4783425A Fabrication process of semiconductor lasers 失效
标题翻译：半导体激光器的制造工艺
公开(公告)号：US4783425A
公开(公告)日：1988-11-08
申请号：US924774
申请日：1986-10-30
申请人： Tadashi Fukuzawa , Yuichi Ono , Shinichi Nakatsuka , Takashi Kajimura
发明人： Tadashi Fukuzawa , Yuichi Ono , Shinichi Nakatsuka , Takashi Kajimura
IPC分类号： H01L33/00 , H01S5/20 , H01S5/223 , H01S5/323 , H01S5/34 , H01L21/205 , H01L21/225 , H01L21/265
CPC分类号： B82Y20/00 , H01L33/0062 , H01S5/2231 , H01S5/34 , H01S5/2081 , H01S5/32316
摘要： A p-GaAlAs cladding layer is exposed to the air if a groove of the form of a stripe is formed by chemical etching in an n-GaAs layer that serves as a current confinement layer on the p-GaAlAs cladding layer, the groove being so formed as to reach the cladding layer. The GaAlAs is oxidized so easily that an unstable degradation layer is formed on the surface thereof. To solve this problem according to the prior art, an undoped GaAs layer that serves as a cover layer is formed on the p-GaAlAs cladding layer, the n-GaAs layer is formed, and the etching is effected so that the undoped GaAs layer is simply exposed. The undoped GaAs layer is then heated in the MBE apparatus while being irradiated with the As molecular beam and is thermally etched. Therefore, the cladding layer is exposed in vacuum and the p-GaAlAs layer is formed thereon. However, this method is not suited for mass-production since the thermal etching is unstable and it needs the MBE apparatus of a very high degree of vacuum. Quality of the crystal decreases, too, due to the heating. This invention therefore provides a fabrication process of semiconductor lasers in which the cover layer disappears due to interdiffusion of constituent elements that stem from the diffusion of impurities such as zinc ions in the undoped GaAs layer.
摘要翻译：如果通过在p-GaAlAs包层上作为电流限制层的n-GaAs层中的化学蚀刻形成条纹形式的沟槽，则p-GaAlAs包层暴露于空气中，凹槽为形成为到达包层。 GaAlAs容易氧化，从而在其表面上形成不稳定的降解层。为了解决现有技术的问题，在p-GaAlAs包层上形成作为覆盖层的未掺杂的GaAs层，形成n-GaAs层，进行蚀刻，使未掺杂的GaAs层为简单暴露。然后在MBE装置中加热未掺杂的GaAs层，同时用As分子束照射并进行热蚀刻。因此，在真空中露出包覆层，在其上形成p-GaAlAs层。然而，该方法不适于批量生产，因为热蚀刻不稳定，并且需要非常高真空度的MBE装置。由于加热，晶体的质量也降低。因此，本发明提供一种半导体激光器的制造工艺，其中由于在未掺杂的GaAs层中的诸如锌离子的杂质的扩散而导致的构成元素的相互扩散，覆盖层消失。

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