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    • 1. 发明授权
    • Semiconductor laser device
    • 半导体激光器件
    • US4506366A
    • 1985-03-19
    • US393313
    • 1982-06-29
    • Naoki ChinoneYasutoshi KashiwadaShigeo YamashitaKunio Aiki
    • Naoki ChinoneYasutoshi KashiwadaShigeo YamashitaKunio Aiki
    • H01S5/00H01S5/16H01S5/22H01S5/40H01S3/19
    • H01S5/16H01S5/2203H01S5/4043
    • A semiconductor laser device including at least a laminated region of first, second, third and fourth semiconductor layers on a predetermined semiconductor substrate, wherein the third semiconductor layer has a refractive index smaller than that of the second semiconductor layer; the first and fourth semiconductor layers have a refractive index smaller than that of the second and third semiconductor layers and have a conductivity type opposite that of the second and third semiconductor layers; the forbidden band gap of the first and third semiconductor layers is greater than that of the second semiconductor layer; and at least the second and third semiconductor layers are bent so that the laser light generated inside the second semiconductor layer in the proximity of the laser light-emitting facets generates optical coupling in the third semiconductor layer and is emitted from the crystal facets of the third semiconductor layer. The device of the present invention is effective for increasing the output of semiconductor laser devices.
    • 一种半导体激光装置,其特征在于,在规定的半导体基板上至少具有第一,第二,第三,第四和第四半导体层的层叠区域,其中,所述第三半导体层的折射率小于所述第二半导体层的折射率; 第一和第四半导体层的折射率小于第二和第三半导体层的折射率,并且具有与第二和第三半导体层相反的导电类型; 第一和第三半导体层的禁带宽大于第二半导体层的禁带宽; 并且至少第二和第三半导体层被弯曲,使得在激光发射面附近在第二半导体层内部产生的激光在第三半导体层中产生光耦合,并从第三半导体层的晶面发射 半导体层。 本发明的器件对于增加半导体激光器件的输出是有效的。
    • 2. 发明授权
    • Semiconductor laser device
    • 半导体激光器件
    • US4432091A
    • 1984-02-14
    • US342357
    • 1982-01-25
    • Takao KurodaTakashi KajimuraYasutoshi KashiwadaNaoki ChinoneKunio AikiJun-ichi Umeda
    • Takao KurodaTakashi KajimuraYasutoshi KashiwadaNaoki ChinoneKunio AikiJun-ichi Umeda
    • H01L21/208H01S5/00H01S5/10H01S3/19
    • H01S5/10
    • In a semiconductor laser device having at least a first semiconductor layer, second and third semiconductor layers which are formed in a manner to sandwich the first semiconductor layer and which have a wider band gap and a lower refractive index than those of the first semiconductor layer, an optical resonator and carrier injection means; a semiconductor laser device characterized in that at least said first semiconductor layer has an angle of inclination (.theta.) relative to an axis which is perpendicular to optically flat faces constituting said optical resonator. The inclination angle .theta. (rad) should most preferably lie in a range of: ##EQU1## where .theta..sub.z denotes a reflection angle, .theta..sub.c a critical angle, W 1/2 of a thickness of a waveguide, and l a cavity length. The laser device is effective for preventing laser facets from breaking down, and can produce high power.
    • 在具有至少第一半导体层的半导体激光器件中,以夹着第一半导体层的方式形成并且具有比第一半导体层的折射率更宽的带隙和更低折射率的第二和第三半导体层, 光学谐振器和载体注入装置; 一种半导体激光器件,其特征在于,至少所述第一半导体层相对于垂直于构成所述光谐振器的光学平面的轴线具有倾斜角(θ)。 倾斜角度θ(rad)应最优选在以下范围内:θz表示反射角,θc临界角,波导厚度的W 1/2,以及l腔长度。 激光装置有效防止激光刻面破碎,并能产生高功率。
    • 5. 发明授权
    • Semiconductor laser device
    • 半导体激光器件
    • US4329658A
    • 1982-05-11
    • US51144
    • 1979-06-22
    • Atsutoshi DoiKunio AikiNaoki ChinoneSatoshi NakamuraRyoichi Ito
    • Atsutoshi DoiKunio AikiNaoki ChinoneSatoshi NakamuraRyoichi Ito
    • H01L21/208H01S5/00H01S5/042H01S5/12H01S5/223H01S3/19
    • H01S5/2232H01L33/0025H01S5/1228
    • A semiconductor laser device is formed of a semiconductor material assembly including a first semiconductor layer having an active region formed directly by crystal growth on a substrate for the crystal growth having on the surface thereof a second semiconductor layer. A third semiconductor layer is also formed on the first layer. The refractive index of each of the second semiconductor material region and the third semiconductor layer is smaller than that of the first semiconductor layer while the band gap of each of the second semiconductor material region and the third semiconductor layer is broader than that of the first semiconductor layer. In order to provide mode stabilization even at long wavelength, the thickness of the active region formed at the interface between said first semiconductor layer and said substrate for crystal growth is made larger than the thickness of the other portions in the first semiconductor layer so that the effective refractive index to laser beams is changed stepwise in a direction perpendicular to the direction of the laser beams.
    • 半导体激光装置由半导体材料组件形成,该半导体材料组件包括具有直接通过晶体生长形成的有源区的第一半导体层,用于在其表面上具有第二半导体层的晶体生长用基板上。 在第一层上也形成第三半导体层。 第二半导体材料区域和第三半导体层中的每一个的折射率小于第一半导体层的折射率,而第二半导体材料区域和第三半导体层中的每个的带隙比第一半导体层的折射率宽 层。 为了即使在长波长下也提供模式稳定化,使形成在所述第一半导体层和所述用于晶体生长的基板之间的界面处的有源区的厚度大于第一半导体层中的其它部分的厚度, 激光束的有效折射率在与激光束的方向垂直的方向上逐步变化。