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1. 发明申请

US20180048116A1 SEMICONDUCTOR OPTICAL DEVICE, OPTICAL MODULE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE 审中-公开
公开(公告)号：US20180048116A1
公开(公告)日：2018-02-15
申请号：US15671540
申请日：2017-08-08
申请人： Oclaro Japan, Inc.
发明人： Koichiro ADACHI , Kouji NAKAHARA , Akira NAKANISHI
IPC分类号： H01S5/0625 , H01S5/022 , H01S5/026 , H01S5/24
CPC分类号： H01S5/06251 , H01S5/02236 , H01S5/02248 , H01S5/02284 , H01S5/02288 , H01S5/02292 , H01S5/0261 , H01S5/0265 , H01S5/0267 , H01S5/12 , H01S5/18 , H01S5/22 , H01S5/24 , H01S5/42
摘要： A semiconductor optical device includes: a first conductive type semiconductor layer; an active layer; a second conductive type semiconductor layer including a ridge portion; a pair of first grooves, formed on bottom surfaces of both sides of the ridge portion and dividing the active layer; an optical functioning part including the first and second conductive type semiconductor layers, converting a state of light, and having a height higher than a height of the bottom surface of the ridge portion; and a second groove, at least a part thereof being formed on the optical functioning part, an end portion thereof being connected to the first groove, the second conductive type semiconductor layer being divided, and the maximum height of an inner wall surface thereof being higher than the maximum height of an inner wall surface of the first groove.

2. 发明授权

US09853419B2 Optical amplifying element, light source device, and image pickup device 有权
公开(公告)号：US09853419B2
公开(公告)日：2017-12-26
申请号：US15345268
申请日：2016-11-07
申请人： CANON KABUSHIKI KAISHA
发明人： Takeshi Uchida
IPC分类号： H01S5/068 , H01S5/042 , G01B9/02 , H01S5/0683 , H01S5/0687
CPC分类号： H01S5/06837 , G01B9/02007 , G01B9/02091 , H01S5/02284 , H01S5/0267 , H01S5/041 , H01S5/042 , H01S5/0687 , H01S5/18341 , H01S5/18366 , H01S5/4006 , H01S5/423 , H01S5/50
摘要： An optical amplifying element includes: a pair of reflectors that constitutes a cavity; an active layer disposed between the pair of reflectors; and an excitation unit configured to excite the active layer, wherein the active layer excited by the excitation unit amplifies intensity of a laser beam that enters the optical amplifying element when the laser beam reflects back and forth within the cavity, and wherein the pair of reflectors is configured to change a length of the cavity according to a wavelength of the laser beam.

3. 发明授权

US09780530B2 Semiconductor integrated optical device, manufacturing method thereof and optical module 有权
公开(公告)号：US09780530B2
公开(公告)日：2017-10-03
申请号：US14961984
申请日：2015-12-08
申请人： Oclaro Japan, Inc.
发明人： Koichiro Adachi , Takanori Suzuki , Yasushi Sakuma , Kazuhiko Naoe , Akira Nakanishi
IPC分类号： G02B6/12 , H01S5/12 , H01S5/20 , H01S5/125 , H01S5/026 , H01S5/028 , H01S5/22 , H01S5/227
CPC分类号： H01S5/1231 , H01S5/0267 , H01S5/0287 , H01S5/125 , H01S5/209 , H01S5/22 , H01S5/2275
摘要： Provided is a butt-jointed (BJ) semiconductor integrated optical device having a high manufacturing yield. A semiconductor integrated optical device, which is configured such that, on a semiconductor substrate, a first semiconductor optical element including an active layer and a second semiconductor optical element including a waveguide layer are butt-jointed to each other with their optical axes being aligned with each other, includes: a semiconductor regrowth layer including at least one of a diffraction grating layer or an etching stop layer, which is formed by one epitaxial growth across an entire surface above the active layer and the waveguide layer; and a cladding layer formed above the semiconductor regrowth layer.

4. 发明申请

US20160233641A1 INTEGRATED HYBRID LASER SOURCE COMPATIBLE WITH A SILICON TECHNOLOGY PLATFORM, AND FABRICATION PROCESS 有权
标题翻译：一体化混合激光源与硅技术平台兼容，制造工艺
公开(公告)号：US20160233641A1
公开(公告)日：2016-08-11
申请号：US14945859
申请日：2015-11-19
申请人： STMICROELECTRONICS SA , STMICROELECTRONICS (CROLLES 2) SAS
发明人： Alain CHANTRE , Charles BAUDOT , Sébastien CREMER
IPC分类号： H01S5/026 , H01S5/22 , H01S5/125
CPC分类号： H01S5/026 , G02B6/12004 , G02B6/1225 , G02B6/132 , G02B6/136 , H01S5/021 , H01S5/0264 , H01S5/0265 , H01S5/0267 , H01S5/0268 , H01S5/0422 , H01S5/0425 , H01S5/0656 , H01S5/1032 , H01S5/1035 , H01S5/125 , H01S5/22 , H01S5/2206
摘要： A photonic integrated circuit includes a first insulating region encapsulating at least one metallization level, a second insulating region at least partially encapsulating a gain medium of a laser source, and a stacked structure placed between the two insulating regions. The stacked structure includes a first polycrystalline or single-crystal silicon layer, a second polycrystalline or single-crystal silicon layer, an intermediate layer optically compatible with the wavelength of the laser source and selectively etchable relative to silicon and that separates the first layer from a first portion of the second layer, and the gain medium facing at least one portion of the first layer. The first layer, the intermediate layer, and the first portion of the second layer form an assembly containing a resonant cavity and a waveguide, which are optically coupled to the gain medium, and a second portion of the second layer containing at least one other photonic component.
摘要翻译：光子集成电路包括封装至少一个金属化水平的第一绝缘区域，至少部分地封装激光源的增益介质的第二绝缘区域和放置在两个绝缘区域之间的层叠结构。层叠结构包括第一多晶或单晶硅层，第二多晶或单晶硅层，与激光源的波长光学兼容并且可相对于硅选择性地蚀刻的中间层，并且将第一层与所述第二层的第一部分和所述增益介质面向所述第一层的至少一部分。第一层，中间层和第二层的第一部分形成包含谐振腔和波导的组件，光学耦合到增益介质，第二层的第二部分包含至少一个其他光子零件。

5. 发明授权

US09048623B2 Photonic crystal laser 有权
标题翻译：光子晶体激光器
公开(公告)号：US09048623B2
公开(公告)日：2015-06-02
申请号：US13581743
申请日：2011-03-01
申请人： Susumu Noda , Kyoko Kitamura , Yoshitaka Kurosaka , Kyosuke Sakai
发明人： Susumu Noda , Kyoko Kitamura , Yoshitaka Kurosaka , Kyosuke Sakai
IPC分类号： H01S5/18 , H01S5/10 , B82Y20/00 , H01S5/187 , H01S5/026 , H01S5/343
CPC分类号： H01S5/105 , B82Y20/00 , H01S5/0267 , H01S5/1071 , H01S5/187 , H01S5/34333 , H01S2301/14 , H01S2301/203
摘要： A photonic crystal laser capable of producing a radially-polarized halo-shaped laser beam having a smaller width than conventional beams includes: an active layer; a ring-shaped photonic crystal including a plate-shaped base body on one side of the active layer, the base body having a number of modified refractive index areas of the same shape, the modified refractive index areas having a refractive index different from the base body and periodically arranged in the circumferential direction of a ring, and each of the modified refractive index areas being asymmetrically shaped with respect to an axis extending through the center of the modified refractive index area in the radial direction of the ring; a first and second electrode facing each other across the active layer and the ring-shaped photonic crystal; and a window provided in the second electrode capable of allowing passage of a laser light generated from the ring-shaped photonic crystal.
摘要翻译：能够产生具有比常规光束更小的宽度的径向偏振的卤素状激光束的光子晶体激光器包括：有源层; 在有源层的一侧包括板状基体的环状光子晶体，所述基体具有多个相同形状的改性折射率区域，所述改性折射率区域的折射率不同于所述基底并且每个修改的折射率区域相对于在环的径向方向上延伸穿过修改的折射率区域的中心的轴线不对称地成形; 第一和第二电极，跨越有源层和环形光子晶体彼此面对; 以及设置在第二电极中的能够允许从环形光子晶体产生的激光通过的窗口。

6. 发明申请

US20140269805A1 Light Coupling Device and Methods of Forming Same 有权
标题翻译：光耦合装置及其形成方法
公开(公告)号：US20140269805A1
公开(公告)日：2014-09-18
申请号：US13797999
申请日：2013-03-12
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Jui Hsieh Lai , Ying-Hao Kuo , Hai-Ching Chen , Tien-I Bao
IPC分类号： H01S5/026
CPC分类号： H01S5/0267 , G02B6/421 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/73265 , H01L2224/8592 , H01L2924/15311 , H01L2924/181 , H01S5/02276 , H01S5/02284 , H01S5/02288 , H01S5/026 , H01S5/183 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An embodiment is a semiconductor device comprising an optical device over a first substrate, a vertical waveguide on a top surface of the optical device, the vertical waveguide having a first refractive index, and a capping layer over the vertical waveguide, the capping layer configured to be a lens for the vertical waveguide and the capping layer having a second refractive index.
摘要翻译：一个实施例是一种半导体器件，包括在第一衬底上的光学器件，在光学器件的顶表面上的垂直波导，具有第一折射率的垂直波导和垂直波导上的覆盖层，所述封盖层被配置为作为垂直波导的透镜和具有第二折射率的封盖层。

7. 发明申请

US20130207140A1 Semiconductor Optical Element Semiconductor Optical Module and Manufacturing Method Thereof 审中-公开
标题翻译：半导体光元件半导体光模块及其制造方法
公开(公告)号：US20130207140A1
公开(公告)日：2013-08-15
申请号：US13741858
申请日：2013-01-15
申请人： Hitachi, Ltd.
发明人： Shigeki MAKINO , Takeshi KITATANI , Kazunori SHINODA , Koichiro ADACHI
IPC分类号： H01L33/58
CPC分类号： H01L33/58 , H01S5/0265 , H01S5/0267 , H01S5/12 , H01S5/18 , H01S5/2224 , H01S5/2275
摘要： A semiconductor optical element comprises a substrate, an active layer lying in one direction over the substrate from which light exits using a side in the shorter direction among the four sides as an outgoing end, a buried layer provided over the substrate and covering two sides in the longitudinal direction among the four sides, a clad layer provided over the active layer and over the substrate existing on the extension line of the outgoing end of the active layer, a mirror which reflects light from the active layer provided on the extension line of the active layer, wherein the mirror is formed in the clad layer.
摘要翻译：半导体光学元件包括基板，位于基板上的一个方向上的有源层，光从四边中的短边方向出射为出射端，设置在基板上并覆盖两侧的掩埋层四边之间的纵向方向，设置在有源层上方的覆盖层和存在于有源层的出射端的延伸线上的衬底上的反射镜，其反射来自设置在有源层的延伸线上的有源层的光活性层，其中反射镜形成在包覆层中。

8. 发明授权

US08315287B1 Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive lens, and a method for making the device 有权
$Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive lens, and a method for making the device$
标题翻译：边缘发射激光器与衍射透镜一体化的表面发射半导体激光器件及其制造方法
公开(公告)号：US08315287B1
公开(公告)日：2012-11-20
申请号：US13099429
申请日：2011-05-03
申请人： Guido Alberto Roggero , Rui Yu Fang , Luigi Tallone
发明人： Guido Alberto Roggero , Rui Yu Fang , Luigi Tallone
IPC分类号： H01S5/00
CPC分类号： G02B6/12004 , H01S5/026 , H01S5/0267 , H01S5/0425 , H01S5/162 , H01S5/18 , H01S2301/176
摘要： A surface-emitting semiconductor laser device is provided that includes an edge-emitting laser integrated in a semiconductor material with various reflectors and a diffractive lens. The edge-emitting laser has a first section comprising an active MQW region, a second section comprising a passive region and a third section comprising a semi-insulating or un-doped semiconductor bulk layer. This configuration ensures that the injection current will pass through all of the layers of the active region, thereby preventing the occurrence of optical losses due to un-injected areas of the MQW active region. In addition, the inclusion of the passive region ensures that there is no current passing through the interface between the active MQW region and the regrown semiconductor bulk layer. The latter feature improves performance and device reliability.
摘要翻译：提供一种表面发射半导体激光器件，其包括集成在具有各种反射器的半导体材料中的边缘发射激光器和衍射透镜。边缘发射激光器具有包括有源MQW区域的第一部分，包括无源区域的第二部分和包括半绝缘或未掺杂半导体体层的第三部分。该配置确保了注入电流将通过有源区域的所有层，从而防止由于MQW有源区域的未注入区域引起的光学损耗的发生。此外，包括无源区域确保没有电流通过有源MQW区域和再生长半导体体层之间的界面。后者的功能提高了性能和设备的可靠性。

9. 发明授权

US08264765B2 Stabilized light source 有权
标题翻译：稳定光源
公开(公告)号：US08264765B2
公开(公告)日：2012-09-11
申请号：US12872074
申请日：2010-08-31
申请人： Tuomas Vallius , Pietari Tuomisto , Janne Konttinen
发明人： Tuomas Vallius , Pietari Tuomisto , Janne Konttinen
IPC分类号： G02F1/365 , G02F1/35
CPC分类号： H01S5/141 , H01S3/08009 , H01S3/109 , H01S5/0267 , H01S5/18
摘要： A light source including a light emitting unit, a nonlinear medium, and a resonant grating. The light emitting unit is arranged to emit a first light into the nonlinear medium. The nonlinear medium is arranged to generate a second light such that an optical frequency of the second light is higher than an optical frequency of the first light. The resonant grating is arranged to stabilize an optical frequency of the first light by providing optical feedback to the light emitting unit.
摘要翻译：一种光源，包括发光单元，非线性介质和谐振光栅。发光单元布置成将第一光发射到非线性介质中。非线性介质被布置成产生第二光，使得第二光的光频率高于第一光的光频率。谐振光栅被布置成通过向发光单元提供光学反馈来稳定第一光的光频率。

10. 发明授权

US07970041B2 Semiconductor laser apparatus 有权
标题翻译：半导体激光装置
公开(公告)号：US07970041B2
公开(公告)日：2011-06-28
申请号：US12385735
申请日：2009-04-17
申请人： Hideo Arimoto , Masahiro Aoki
发明人： Hideo Arimoto , Masahiro Aoki
IPC分类号： H01S3/08
CPC分类号： H01S5/141 , H01S5/02248 , H01S5/02284 , H01S5/0267 , H01S5/1082 , H01S5/1085 , H01S5/18 , H01S5/227 , H01S5/4087
摘要： A wavelength variable laser smaller in size than the conventional one can be achieved by arranging a gain chip, an etalon filter and a fifth reflective mirror on an AlN submount and longitudinally integrating the gain chip in which a 45° mirror and a lens are integrated and the etalon filter. A laser cavity has a structure in which light passes through an active layer from a first reflective mirror realized by an end surface of the gain chip, is reflected by the 45° mirror at an angle of 90° and then passes through the lens. The light having passed through the lens is converted into parallel light, passes through the etalon filter and reaches the fifth reflective mirror and is then reflected. The reflected light returns through the same optical path and reaches the first reflective mirror realized by the end surface of the gain chip.
摘要翻译：可以通过在AlN基座上布置增益芯片，标准具滤波器和第五反射镜并纵向积分其中集成45°反射镜和透镜的增益芯片来实现尺寸比常规小的波长可变激光器，标准具过滤器。激光腔具有光从通过增益芯片的端面实现的第一反射镜穿过有源层的结构，被45°反射镜以90°的角度反射，然后通过透镜。通过透镜的光被转换为平行光，通过标准具过滤器并到达第五反射镜，然后被反射。反射光通过相同的光路返回并到达由增益芯片的端面实现的第一反射镜。

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