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1. 发明授权

US4665528A Distributed-feedback semiconductor laser device 失效
标题翻译：分布式反馈半导体激光器件
公开(公告)号：US4665528A
公开(公告)日：1987-05-12
申请号：US681820
申请日：1984-12-14
申请人： Naoki Chinone , Shinji Tsuji , Yoshihisa Fujisaki , Yasutoshi Kashiwada , Motohisa Hirao
发明人： Naoki Chinone , Shinji Tsuji , Yoshihisa Fujisaki , Yasutoshi Kashiwada , Motohisa Hirao
IPC分类号： H01S5/00 , H01S5/10 , H01S5/12 , H01S5/183 , H01S3/19
CPC分类号： H01S5/1225 , H01S5/106 , H01S5/1215
摘要： Disclosed is a distributed feedback semiconductor laser provided with a grating which effects optical feedback by means of periodic corrugation disposed inside an optical resonator. The optical resonator has at least two regions having different bragg wavelength, and these regions are arranged longitudinally in the direction of an optical axis. The laser device can realize stable single longitudinal mode oscillation.
摘要翻译：公开了一种具有光栅的分布反馈半导体激光器，其通过设置在光学谐振器内部的周期性波纹来实现光学反馈。光谐振器具有至少两个具有不同布拉格波长的区域，并且这些区域沿光轴方向纵向布置。激光装置可以实现稳定的单纵模振荡。

2. 发明授权

US4366569A Semiconductor laser device including an arrangement for preventing laser degradation caused by excessive current flow 失效
标题翻译：半导体激光装置包括用于防止由过大电流引起的激光劣化的装置
公开(公告)号：US4366569A
公开(公告)日：1982-12-28
申请号：US191293
申请日：1980-09-26
申请人： Motohisa Hirao , Michiharu Nakamura , Atsutoshi Doi , Shinji Tsuji , Yutaka Takeda , Takao Mori
发明人： Motohisa Hirao , Michiharu Nakamura , Atsutoshi Doi , Shinji Tsuji , Yutaka Takeda , Takao Mori
IPC分类号： H01L21/208 , H01L33/16 , H01L33/28 , H01L33/30 , H01L33/40 , H01S5/00 , H01S5/227 , H01S3/19
CPC分类号： H01S5/227 , H01S5/2275
摘要： Disclosed herein is a semiconductor laser device including at least an active region consisting of a semiconductor material and a semiconductor region consisting of a material having a different composition from that of the active region and confining the active region, wherein at least one p-n junction is formed inside the confining region in parallel to the active region and a current flowing through the active region at a field strength below an electric field causing degradation of the semiconductor laser device is allowed to flow through regions other than the active region via the p-n junction by controlling the impurity concentration of the region having the p-n junction. The semiconductor laser device does not undergo catastrophic degradation even when applied with a current higher than a rated value.
摘要翻译：本发明公开了一种半导体激光器件，其至少包括由半导体材料构成的有源区和由与有源区的组成不同的材料构成的半导体区域，并限制该有源区，其中形成至少一个pn结在限制区域内与激活区域平行地流过电场强度低于电场的电流，导致半导体激光器件劣化的电流经由pn结通过控制区域流过有源区域以外的区域具有pn结的区域的杂质浓度。即使施加高于额定值的电流，半导体激光器也不会发生灾难性的劣化。

3. 发明授权

US4288757A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4288757A
公开(公告)日：1981-09-08
申请号：US56360
申请日：1979-07-10
申请人： Takashi Kajimura , Motohisa Hirao , Michiharu Nakamura , Takao Kuroda , Shigeo Yamashita , Jun-Ichi Umeda
发明人： Takashi Kajimura , Motohisa Hirao , Michiharu Nakamura , Takao Kuroda , Shigeo Yamashita , Jun-Ichi Umeda
IPC分类号： H01L21/208 , H01S5/00 , H01S5/22 , H01S5/323 , H01S3/19
CPC分类号： H01L33/0025 , H01S5/22 , H01S5/32308 , H01S5/32325
摘要： In certain applications, it is desirable to have a semiconductor laser device having shorter wave lengths of oscillation than are possible with conventional semiconductor lasers. To accomplish this, a semiconductor laser device is formed having a double-hetero structure, which comprises a semiconductor substrate composed of a GaAsP crystal, a first cladding layer formed on the substrate and composed of a GaAlAsP crystal of one conducting type, an active layer formed on the first cladding layer and composed of GaInAsP crystal, and a second cladding layer formed on the active layer and composed of a GaAlAsP crystal of the conducting type reverse to that of the first cladding layer. The cladding layers disposed on both sides of the active layer have a lower refractivity and a larger band gap than the active layer.
摘要翻译：在某些应用中，期望具有比常规半导体激光器可能的波长波长更短的半导体激光器件。为了实现这一点，形成具有双异质结构的半导体激光器件，其包括由GaAsP晶体构成的半导体衬底，形成在衬底上并由一种导电类型的GaAlAsP晶体构成的第一覆层，活性层形成在第一包层上并由GaInAsP晶体构成;以及第二覆层，形成在有源层上并由与第一覆层相反的导电类型的GaAlAsP晶体构成。设置在有源层两侧的覆层具有比活性层更低的折射率和更大的带隙。

4. 发明授权

US4905057A Semiconductor devices 失效
标题翻译：半导体器件
公开(公告)号：US4905057A
公开(公告)日：1990-02-27
申请号：US325123
申请日：1989-03-17
申请人： Akio Ohishi , Takao Kuroda , Shinji Tsuji , Motohisa Hirao , Hiroyoshi Matsumura
发明人： Akio Ohishi , Takao Kuroda , Shinji Tsuji , Motohisa Hirao , Hiroyoshi Matsumura
IPC分类号： H01S5/227
CPC分类号： H01S5/227 , H01S5/2275
摘要： A semiconductor device such as a semiconductor laser device or a transistor which is small in both threshold current and leakage current and exhibits no increase with time in the threshold current and leakage current can be obtained by incorporating pnp or npn junctions in a buried layer which coats an active region containing InGaAsP, forming the mid layer of the junctions with InGaAsP, adjusting the conductivity type of the mid layer with an implanted ion and specifying the energy band width of a semiconductor constituting the mid layer.
摘要翻译：通过在掩埋层中并入pnp或npn结，可以获得阈值电流和漏电流小的半导体激光器件或晶体管，其阈值电流和漏电流不随时间增加，包含InGaAsP的有源区，用InGaAsP形成接合的中间层，用注入离子调节中间层的导电类型，并指定构成中间层的半导体的能带宽度。

5. 发明授权

US4361887A Semiconductor light emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：US4361887A
公开(公告)日：1982-11-30
申请号：US125779
申请日：1980-02-29
申请人： Michiharu Nakamura , Motohisa Hirao , Shigeo Yamashita , Tadashi Fukuzawa , Junichi Umeda
发明人： Michiharu Nakamura , Motohisa Hirao , Shigeo Yamashita , Tadashi Fukuzawa , Junichi Umeda
IPC分类号： H01L29/80 , H01L21/338 , H01L27/095 , H01L27/15 , H01L29/812 , H01S5/00 , H01S5/026 , H01S5/042 , H01S3/19
CPC分类号： H01S5/0265
摘要： A semiconductor laser light emitting element comprises a semiconductor substrate, a laminate region of semiconductor layers having at least a first, a second and a third semiconductor layer formed over the substrate and having a p-n junction defined therein. The first and third semiconductor layers have smaller refractive indices and greater forbidden band gaps than the second semiconductor layer and are opposite in conductivity type to each other. Provided are on the substrate a field effect transistor section having first and second electrodes and a gate electrode disposed between the first and second electrodes, a means for serving as an optical resonator for emitting light in the lengthwise direction of the p-n junction. A means is formed on one surface of the laminate region for injecting current into the third semiconductor layer, the current injection means is short-circuited with the first electrode of the field transistor section and a means is formed on the substrate for receiving the current injected from the current injecting means.
摘要翻译：半导体激光发光元件包括半导体衬底，半导体层的层叠区域，其至少形成在衬底上并具有限定在其中的p-n结的第一，第二和第三半导体层。第一和第三半导体层具有比第二半导体层更小的折射率和更大的禁带宽度，并且与导电类型相反。在基板上设置有具有第一和第二电极的场效应晶体管部分和设置在第一和第二电极之间的栅电极，用作用于在p-n结的长度方向上发光的光谐振器的装置。在层叠区域的一个表面上形成用于将电流注入到第三半导体层中的装置，电流注入装置与场晶体管部分的第一电极短路，并且在基板上形成用于接收注入电流的装置从目前的注射手段。

6. 发明授权

US5340637A Optical device diffraction gratings and a photomask for use in the same 失效
$Optical device diffraction gratings and a photomask for use in the same$
标题翻译：光学器件衍射光栅和用于其中的光掩模
公开(公告)号：US5340637A
公开(公告)日：1994-08-23
申请号：US895430
申请日：1992-06-05
申请人： Makoto Okai , Shinji Tsuji , Akio Ohishi , Motohisa Hirao , Hiroyoshi Matsumura , Tatsuo Harada , Toshiaki Kita , Hideki Taira
发明人： Makoto Okai , Shinji Tsuji , Akio Ohishi , Motohisa Hirao , Hiroyoshi Matsumura , Tatsuo Harada , Toshiaki Kita , Hideki Taira
IPC分类号： G02B5/18 , G03F1/00 , B32B3/28 , G02B27/42 , G03C5/00
CPC分类号： G02B5/1857 , Y10T428/2457 , Y10T428/24612 , Y10T428/24942
摘要： A method of fabricating diffraction gratings wherein a photomask is arranged on a substrate which is coated with a photoresist, light is to be incident thereupon at an acute angle relative to the normal direction of the photomask, and a bright/dark pattern is formed on said photoresist by the interference of the transmission light that has passed through the photomask and the diffraction light. The invention further deals with a photomask used for the above method.
摘要翻译：一种制造衍射光栅的方法，其中光掩模布置在涂覆有光致抗蚀剂的基底上，光将相对于光掩模的法线方向以锐角入射到其上，并且在所述光掩模上形成明暗图案通过透过光掩模的透射光的干涉和衍射光的光致抗蚀剂。本发明还涉及用于上述方法的光掩模。

7. 发明授权

US4841536A Semiconductor laser devices 失效
标题翻译：半导体激光器件
公开(公告)号：US4841536A
公开(公告)日：1989-06-20
申请号：US850685
申请日：1986-04-11
申请人： Aiko Ohishi , Motohisa Hirao , Naoki Chinone , Shinji Tsuji , Hitoshi Nakamura , Hiroyoshi Matsumura
发明人： Aiko Ohishi , Motohisa Hirao , Naoki Chinone , Shinji Tsuji , Hitoshi Nakamura , Hiroyoshi Matsumura
IPC分类号： H01S5/227
CPC分类号： H01S5/227 , H01S5/2275
摘要： This invention discloses a semiconductor laser capable of a high temperature and high output operation by forming a mesa stripe having an active layer in a reverse triangular mesa shape and forming thick semiconductor layers on both sides of the mesa stripe in such a manner that the resulting p-n junctions have a current blocking function. The invention discloses also a semiconductor laser wherein the formation of the p-n junctions described above is made before the formation of the reverse mesa stripe, and ion implantation is introduced in order to form the p-n junctions. Furthermore, the invention relates to transistors and semiconductor lasers using InGaAsP type quaternary compounds as the semiconductor. The quaternary compounds having a composition in which an energy band gap is from 1.2 to 1.4 eV are formed in a thickness of up to 1 .mu.m, and there can be thus obtained semiconductor devices having a small leakage current and being stable with time.
摘要翻译：本发明公开了一种能够通过形成具有反三角台面形状的有源层的台面条形状的高温高输出操作的半导体激光器，在台面条的两侧形成厚半导体层，使得所得到的pn 结点具有电流阻塞功能。本发明还公开了一种半导体激光器，其中在形成反向台面条之前进行上述p-n结的形成，并且引入离子注入以形成p-n结。此外，本发明涉及使用InGaAsP型四元化合物作为半导体的晶体管和半导体激光器。形成其能带隙为1.2〜1.4eV的组成的四元化合物的厚度为1μm以下，可以得到漏电流小且时间稳定的半导体器件。

8. 发明授权

US4426700A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4426700A
公开(公告)日：1984-01-17
申请号：US260744
申请日：1981-05-05
申请人： Motohisa Hirao , Atsutoshi Doi , Michiharu Nakamura , Shinji Tsuji , Takao Mori
发明人： Motohisa Hirao , Atsutoshi Doi , Michiharu Nakamura , Shinji Tsuji , Takao Mori
IPC分类号： H01S5/00 , H01S5/227 , H01S3/19
CPC分类号： H01S5/227 , H01S5/2275
摘要： A buried-heterostructure semiconductor laser including a mesa-shaped optical confinement region having an active layer and a clad layer and disposed on a semiconductor substrate; a burying layer burying both side surfaces of the region; and at least one p-n junction so formed inside the burying layer in parallel to the active layer as to be brought under the reversely biased state during the operation of the laser; wherein surface protection semiconductor layers are formed on the mesa-shaped optical confinement region and on the burying layer, respectively, for protecting the semiconductor assembly in the arrangement such that these surface protection semiconductor layers do not come into direct contact with each other. Even if the forbidden band gas of these surface protection semiconductor layers are relatively small, it is possible to realize a semiconductor laser having an extremely small leakage current and reduced variance of threshold current values, while protecting the surface of the multi-layer semiconductor layers.
摘要翻译：一种掩埋异质结构半导体激光器，包括具有有源层和覆层的台面形状的光限制区域，并设置在半导体衬底上; 埋藏在该区域的两个侧表面上的掩埋层; 以及在激光器的工作过程中平行于活性层在掩埋层内部形成的至少一个p-n结，使其处于反向偏置状态; 其中表面保护半导体层分别形成在台状光限制区域和掩埋层上，用于保护半导体组件的布置，使得这些表面保护半导体层不彼此直接接触。即使这些表面保护半导体层的禁带宽度相对较小，也可以在保护多层半导体层的表面的同时实现具有极小的漏电流和减小阈值电流值的方差的半导体激光器。

9. 发明授权

US4775980A Distributed-feedback semiconductor laser device 失效
标题翻译：分布式反馈半导体激光器件
公开(公告)号：US4775980A
公开(公告)日：1988-10-04
申请号：US759136
申请日：1985-07-26
申请人： Naoki Chinone , Shinji Tsuji , Yoshihisa Fujisaki , Yasutoshi Kashiwada , Motohisa Hirao , Hitoshi Nakamura , Akio Oishi , Kenji Hiruma , Tadashi Fukuzawa , Hiroyoshi Matumura
发明人： Naoki Chinone , Shinji Tsuji , Yoshihisa Fujisaki , Yasutoshi Kashiwada , Motohisa Hirao , Hitoshi Nakamura , Akio Oishi , Kenji Hiruma , Tadashi Fukuzawa , Hiroyoshi Matumura
IPC分类号： H01S5/10 , H01S5/12 , H01S5/183 , H01S3/08 , H01S3/19
CPC分类号： H01S5/18305 , H01S5/12 , H01S5/106 , H01S5/1206 , H01S5/1215 , H01S5/1225 , H01S5/18308 , H01S5/2072
摘要： A distributed feedback semiconductor laser provided with a grating which effects optical feedback by means of periodic corrugation disposed inside an optical resonator. The optical resonator has at least two regions having different Bragg wavelengths, and these regions are arranged longitudinally in the direction of an optical axis. The laser device can realize stable single longitudinal mode oscillation through variation of the refractive indexes of the regions nonuniformly around an average value.
摘要翻译：一种配置有光栅的分布式反馈半导体激光器，其通过设置在光学谐振器内部的周期性波纹来实现光学反馈。光谐振器具有至少两个具有不同布拉格波长的区域，并且这些区域沿光轴方向纵向布置。激光装置可以通过使区域的折射率不均匀地围绕平均值变化来实现稳定的单纵模振荡。

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