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1. 发明授权

US5304822A Static induction type semiconductor device with multiple source contact regions 失效
标题翻译：具有多个源极接触区域的静态感应型半导体器件
公开(公告)号：US5304822A
公开(公告)日：1994-04-19
申请号：US877700
申请日：1992-05-01
申请人： Haruo Takagi , Shinobu Aoki , Yukihiko Watanabe , Hiroshi Tadano
发明人： Haruo Takagi , Shinobu Aoki , Yukihiko Watanabe , Hiroshi Tadano
IPC分类号： H01L29/417 , H01L29/772 , H01L29/80 , H01L29/74
CPC分类号： H01L29/41741 , H01L29/7722
摘要： A static induction type semiconductor device of a surface gate type, includes a source region, gate region and drain region. A channel region is formed between the drain region and the source region, such that when a bias potential is applied between the gate region and the source region, carriers flow to the drain region from the source region via the channel region. A source electrode is provided on the semiconductor layer. A source contact region is provided between the source electrode and the source region to establish electrical connection therebetween. The source contact region is segmented into a plurality of smaller regions or sections whose total area is smaller than the area of the corresponding portion of the source region, for improving the current gain, and for preventing or significantly reducing local current concentration.
摘要翻译：表面栅型静电感应型半导体器件包括源极区，栅极区和漏极区。在漏极区域和源极区域之间形成沟道区域，使得当在栅极区域和源极区域之间施加偏置电位时，载流子经由沟道区域从源极区域流到漏极区域。源电极设置在半导体层上。源极接触区域设置在源电极和源极区域之间以在它们之间建立电连接。源极接触区域被分割为总面积小于源极区域的相应部分的面积的多个较小区域或部分，用于改善电流增益，以及用于防止或显着降低局部电流集中。

2. 发明授权

US4994870A Static induction type semiconductor device 失效
标题翻译：静电感应式半导体器件
公开(公告)号：US4994870A
公开(公告)日：1991-02-19
申请号：US563680
申请日：1990-08-02
申请人： Shinobu Aoki , Haruo Takagi , Hiroshi Tadano , Takashi Suzuki , Susumu Sugiyama
发明人： Shinobu Aoki , Haruo Takagi , Hiroshi Tadano , Takashi Suzuki , Susumu Sugiyama
IPC分类号： H01L29/74 , H01L29/772 , H01L29/80
CPC分类号： H01L29/7722
摘要： A static induction type semiconductor device is used as a power transistor. It is of the surface gate type and is used for providing a high current density. The static induction type semiconductor device provides a plurality of small source regions surrounded by a gate region. According to this structure, the channel region beneath the source region becomes small, thereby increasing the stored carrier density and enabling a large main current to flow when using a small gate current, thereby achieving a high current amplification ratio. Further, when it flows the main current is distributed to the source regions, thus preventing increase in on-voltage.
摘要翻译：静电感应型半导体器件用作功率晶体管。它是表面栅型，用于提供高电流密度。静电感应型半导体器件提供由栅极区域包围的多个小的源极区域。根据该结构，源极区域下方的沟道区域变小，从而增加存储的载流子密度，并且在使用小栅极电流时能够使大的主电流流动，从而实现高电流放大率。此外，当其流动时，主电流被分配到源极区域，从而防止导通电压的增加。

3. 发明授权

US06960485B2 Light-emitting device using a group III nitride compound semiconductor and a method of manufacture 失效
标题翻译：使用III族氮化物化合物半导体的发光装置及其制造方法
公开(公告)号：US06960485B2
公开(公告)日：2005-11-01
申请号：US10375135
申请日：2003-02-28
申请人： Toshiya Uemura , Naohisa Nagasaka , Masaki Hashimura , Atsuo Hirano , Hiroshi Tadano , Tetsu Kachi , Hideki Hosokawa
发明人： Toshiya Uemura , Naohisa Nagasaka , Masaki Hashimura , Atsuo Hirano , Hiroshi Tadano , Tetsu Kachi , Hideki Hosokawa
IPC分类号： H01L33/00 , H01L33/10 , H01L33/32 , H01L33/46 , H01L33/60 , H01L21/00
CPC分类号： H01L33/46 , H01L33/0095 , H01L33/32
摘要： A process of forming separation grooves for separating a semiconductor wafer into individual light-emitting devices, a process for thinning the substrate, process for adhering the wafer to the adhesive sheet to expose a substrate surface on the reverse or backside of the wafer, a scribing process for forming split lines in the substrate for dividing the wafer into light-emitting devices, and a process of forming a mirror structure comprising a light transmission layer, a reflective layer, and a corrosion-resistant layer, which are laminated in sequence using sputtering or deposition processes. Because the light transmission layer is laminated on the adhesive sheet, gases normally volatilized from the adhesion materials are sealed and do not chemically combine with the metal being deposited as the reflective layer. As a result, reflectivity of the reflective layer can be maintained.
摘要翻译：形成用于将半导体晶片分离成各个发光器件的分离槽的工艺，用于使基板变薄的工艺，将晶片粘附到粘合片上以暴露晶片背面或背面的基板表面的处理，划线在基板上形成分割线以将晶片分割成发光器件的工艺，以及形成包括透光层，反射层和耐腐蚀层的反射镜结构的工艺，其顺序地使用溅射或沉积工艺。由于透光层层压在粘合片上，所以通常从粘合材料挥发的气体被密封，并且不与作为反射层沉积的金属化学结合。结果，可以保持反射层的反射率。

4. 发明授权

US06600385B2 Front end module for mobile communications apparatus 失效
公开(公告)号：US06600385B2
公开(公告)日：2003-07-29
申请号：US09799569
申请日：2001-03-07
申请人： Nobumi Harada , Satoshi Suga , Hiroshi Tadano , Hideki Hasegawa
发明人： Nobumi Harada , Satoshi Suga , Hiroshi Tadano , Hideki Hasegawa
IPC分类号： H01P110
CPC分类号： H04B1/52 , H03H7/46 , H05K1/0237 , H05K1/0306 , H05K1/16 , H05K1/181
摘要： The front-end module is composed of a multilayer substrate and surface-mounted components. The front end module constitutes antenna switches, filters, and a high frequency circuit comprising a band splitter circuit as well as the front end of the transceiver circuit equipped with a plurality of transmission/reception features whose communications systems are different. The multilayer substrate arranges a band splitter circuit pattern at the center in the plane direction and symmetrically arranges a plurality of antenna switch conductor patterns whose communications systems are different, with respect to the pattern for the band splitter circuit.

5. 发明授权

US5940314A Ultra-high density memory device 失效
标题翻译：超高密度存储器件
公开(公告)号：US5940314A
公开(公告)日：1999-08-17
申请号：US9304
申请日：1998-01-20
申请人： Motofumi Suzuki , Takeshi Ohwaki , Yasunori Taga , Hiroshi Tadano , Testu Kachi , Yuichi Tanaka , Kazuyoshi Tomita
发明人： Motofumi Suzuki , Takeshi Ohwaki , Yasunori Taga , Hiroshi Tadano , Testu Kachi , Yuichi Tanaka , Kazuyoshi Tomita
IPC分类号： G11B11/00 , G11B5/00 , G11B5/74 , G11B9/00 , G11B9/14 , G11B13/04 , H01L43/08 , G11C11/42
CPC分类号： B82Y10/00 , G11B5/00 , G11B5/74 , G11B9/14 , G11B9/1409 , G11B13/04 , Y10S977/947
摘要： A ultra-high density memory device utilizing a photoinductive ferromagnetic thin film. A photoinductive ferromagnetic thin film is formed on a GaAs substrate, and a tip is arranged so as to face the photoinductive ferromagnetic thin film. The GaAs substrate is disposed on an xyz scanner, and the three-dimensional positional relationship between the GaAs substrate and the tip is changed by the xyz scanner. Blue light is radiated onto the thin film in order to make the magnetization orientation of molecules uniform. Through application of a relatively high voltage, a relatively large current is caused to flow between the tip and the substrate, so that randomization of the magnetization orientation of molecules of the photoinductive ferromagnetic thin film; i.e., writing operation is carried out. Also, through uniform radiation of circular polarized light onto the GaAs substrate and application of a relatively low voltage, tunneling current is caused to flow between the tip and the substrate, which tunneling current changes in accordance with the magnetization orientation of molecules of the photoinductive ferromagnetic thin film. Through detection of the tunneling current, the magnetization orientation of molecules of the photoinductive ferromagnetic thin film can be detected.
摘要翻译：一种利用感光铁磁性薄膜的超高密度存储器件。在GaAs衬底上形成感光铁磁性薄膜，并且将顶端配置为面对感光性铁磁性薄膜。 GaAs衬底设置在xyz扫描器上，并且通过xyz扫描器改变GaAs衬底和尖端之间的三维位置关系。将蓝光照射到薄膜上，以使分子的磁化取向均匀。通过施加相当高的电压，使得相对较大的电流在尖端和衬底之间流动，从而使感光铁磁性薄膜的分子的磁化取向随机化; 即执行写入操作。此外，通过将均匀的圆偏振光辐射到GaAs衬底上并施加相对低的电压，引起隧道电流在尖端和衬底之间流动，该隧道电流根据感光铁磁体的分子的磁化方向而改变薄膜。通过检测隧道电流，可以检测感光铁磁性薄膜的分子的磁化取向。

6. 发明授权

US07505451B2 Usage-based charging device and usage-based charging method 失效
公开(公告)号：US07505451B2
公开(公告)日：2009-03-17
申请号：US10148752
申请日：2001-10-05
申请人： Naoyoshi Hashizume , Hiroshi Tadano , Hirofumi Nakashima , Yasuhiro Yamada
发明人： Naoyoshi Hashizume , Hiroshi Tadano , Hirofumi Nakashima , Yasuhiro Yamada
IPC分类号： H04L12/66 , H04M1/64 , G06F17/00
CPC分类号： H04L12/1439 , H04L12/14 , H04L12/1403 , H04L12/1432 , H04L12/1485 , H04M2215/22
摘要： In a meter rate fees charging apparatus and method for charging a meter rate fee to a sender by amount of use of a network, it is designed such that charging processing means charges the sender based on zone information contained in transmission information communicated between the sender and the recipient. And, in a meter rate fees charging apparatus and method to charge each user a meter rate fee by amount of use of a network, it is designed such that charging means charges the recipient a meter rate fee obtained based on communication information only in the case where the sender is not prohibited from using the network. Furthermore, in a meter rate fees charging apparatus and method to charge a meter rate fee by amount of communication, it is designed such that, in the case where the personal information of the recipient and the personal information of the sender are both managed by the same supervisor, charging processing means selects one pair of the personal information of the recipient and the personal information of the sender out of the personal information of the recipient and the personal information of the sender obtained in duplication by a detecting means, and makes a charge.

7. 发明申请

US20050133799A1 Light-emitting device using a group III nitride compound semiconductor and a method of manufacture 审中-公开
公开(公告)号：US20050133799A1
公开(公告)日：2005-06-23
申请号：US11034261
申请日：2005-01-13
申请人： Toshiya Uemura , Naohisa Nagasaka , Masaki Hashimura , Atsuo Hirano , Hiroshi Tadano , Tetsu Kachi , Hideki Hosokawa
发明人： Toshiya Uemura , Naohisa Nagasaka , Masaki Hashimura , Atsuo Hirano , Hiroshi Tadano , Tetsu Kachi , Hideki Hosokawa
IPC分类号： H01L33/00 , H01L33/10 , H01L33/32 , H01L33/46 , H01L33/60 , H01L21/00 , H01L27/10 , H01L27/15 , H01L29/26 , H01L29/74 , H01L31/12
CPC分类号： H01L33/46 , H01L33/0095 , H01L33/32
摘要： A process of forming separation grooves for separating a semiconductor wafer into individual light-emitting devices, a process for thinning the substrate, process for adhering the wafer to the adhesive sheet to expose a substrate surface on the reverse or backside of the wafer, a scribing process for forming split lines in the substrate for dividing the wafer into light-emitting devices, and a process of forming a mirror structure comprising a light transmission layer, a reflective layer, and a corrosion-resistant layer, which are laminated in sequence using sputtering or deposition processes. Because the light transmission layer is laminated on the adhesive sheet, gases normally volatilized from the adhesion materials are sealed and do not chemically combine with the metal being deposited as the reflective layer. As a result, reflectivity of the reflective layer can be maintained.

8. 发明授权

US4998149A Static induction type semiconductor device 失效
标题翻译：静电感应式半导体器件
公开(公告)号：US4998149A
公开(公告)日：1991-03-05
申请号：US181102
申请日：1988-04-13
申请人： Hiroshi Tadano , Tomoyoshi Kushida
发明人： Hiroshi Tadano , Tomoyoshi Kushida
IPC分类号： H01L29/74 , H01L29/739 , H01L29/80
CPC分类号： H01L29/7392
摘要： Disclosed is an improvement of a static induction type semiconductor device which includes an anode region provided at one surface portion of a semiconductor substrate, a cathode region provided on the other surface portion, a gate region adjacent to the cathode region and a low impurity density region formed at an intermediate portion of the semiconductor substrate. A cathode short region is provided at a position opposite to the cathode region with the gate region therebetween so as to be conducted to the cathode region, thereby quickening the injection of charge at the time of turn-on and draw up of charge at the time of turn-off, and enabling high-speed on and off operation.
摘要翻译：公开了一种静电感应型半导体器件的改进，其包括设置在半导体衬底的一个表面部分处的阳极区域，设置在另一个表面部分上的阴极区域，与阴极区域相邻的栅极区域和低杂质浓度区域形成在半导体衬底的中间部分。阴极短区域设置在与阴极区域相对的位置处，栅极区域在它们之间，以便被传导到阴极区域，从而在接通时加快电荷的注入并在此时提取电荷的关闭，并实现高速开关运行。

9. 发明授权

US4752818A Semiconductor device with multiple recombination center layers 失效
标题翻译：具有多个复合中心层的半导体器件
公开(公告)号：US4752818A
公开(公告)日：1988-06-21
申请号：US912578
申请日：1986-09-26
申请人： Tomoyoshi Kushida , Hiroshi Tadano , Yoshio Nakamura
发明人： Tomoyoshi Kushida , Hiroshi Tadano , Yoshio Nakamura
IPC分类号： H01L29/32 , H01L29/739 , H01L29/744 , H01L29/74
CPC分类号： H01L21/263 , H01L29/32 , H01L29/7391 , H01L29/7392 , H01L29/744
摘要： A semiconductor device comprises two main electrode regions, i.e., cathode and anode regions consisting of high impurity concentration regions of opposite conductivity types, a low impurity concentration region locally formed between the two main electrode regions, a gate region, formed near the cathode region, for controlling a main current, a first local region which has a relatively low carrier lifetime and is formed in a region of the low impurity concentration region near at least one of the gate and cathode regions, and a second local region which has a relatively low carrier lifetime and is formed in a region of the low impurity concentration region which is depleted at the end of the main current turn-off process or which is not depleted to the end, thus satisfying three conditions, i.e., high-speed switching, low forward voltage drop, and high blocking voltage between the main electrodes at the same time.
摘要翻译：半导体器件包括两个主电极区域，即由相对导电类型的高杂质浓度区域组成的阴极和阳极区域，局部形成在两个主电极区域之间的低杂质浓度区域，在阴极区域附近形成的栅极区域，用于控制主电流的第一局部区域，具有相对低的载流子寿命并且形成在栅极和阴极区域中的至少一个附近的低杂质浓度区域的区域中，以及具有相对较低的第二局部区域载流子寿命，形成在低电流关断过程结束时耗尽的或不耗尽的低杂质浓度区域的区域，因此满足三个条件，即高速切换，低正向电压降，主电极之间的高阻断电压。

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