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    • 6. 发明授权
    • Steering wheel
    • 方向盘
    • US4796482A
    • 1989-01-10
    • US871544
    • 1986-06-06
    • Tetsushi HiramitsuSatoshi OnoAtsuo HiranoZenzaburo Murase
    • Tetsushi HiramitsuSatoshi OnoAtsuo HiranoZenzaburo Murase
    • B62D1/10B62D1/16
    • B62D1/105Y10T74/20256Y10T74/20834
    • The steering wheel comprises a column section, a steering shaft passing through the column section, a boss portion secured to the top of the steering shaft, a boss plate secured on the boss portion, a pad section, a plurality of sun gears of the helical gear type, a plurality of planetary shafts, a plurality of pairs of planetary gears of the helical gear type attached to either end portion each of the respective planetary shafts and gearing with the corresponding sun gears, and a resilient member for urging the planetary gears of a pair mounted on at least one of the plural planetary shafts. At least one of the paired planetary gears is attached movably in the longitudinal direction of the axis of that planetary shaft, so that these planetary gears approach mutually or separate from each other in the axial direction of the respective planetary shaft.
    • 方向盘包括柱部分,通过柱部分的转向轴,固定到转向轴顶部的凸台部分,固定在凸台部分上的凸台板,垫部分,多个螺旋形的太阳齿轮 齿轮类型,多个行星轴,多对螺旋齿轮的行星齿轮,其安装在每个相应的行星轴的任一个端部上,并与相应的太阳齿轮传动;以及弹性构件,用于将行星齿轮 一对安装在所述多个行星轴中的至少一个上。 成对的行星齿轮中的至少一个在该行星轴的轴线的长度方向上可移动地附接,使得这些行星齿轮在各行星轴的轴向上相互接近或分离。
    • 8. 发明授权
    • Group III nitride compound semiconductor device
    • III族氮化物化合物半导体器件
    • US07095059B2
    • 2006-08-22
    • US10220878
    • 2001-05-06
    • Toshiya UemuraAtsuo HiranoShigemi Horiuchi
    • Toshiya UemuraAtsuo HiranoShigemi Horiuchi
    • H01L33/00
    • H01L33/40H01L29/2003H01L29/452H01L33/32H01L33/38
    • The present invention provides a Group III nitride compound semiconductor device in which the amount of a current allowed to be applied on a p-type pad electrode can be increased.That is, in the Group III nitride compound semiconductor device according to the present invention, a portion of a translucent electrode coming in contact with a circumferential surface of the p-type pad electrode is formed as a thick port ion to thereby increase the area of contact between the circumferential surface and the translucent electrode to thereby increase the current allowed to be applied on the p-type pad electrode. In addition, the use of the thick portion prevents cracking from occuring between the translucent electrode and the circumferential surface of the pad electrode.
    • 本发明提供了可以增加允许施加在p型焊盘电极上的电流量的III族氮化物化合物半导体器件。 也就是说,在根据本发明的III族氮化物化合物半导体器件中,形成与p型焊盘电极的圆周表面接触的透光性电极的一部分作为厚端口离子,从而增加 在圆周表面和透光电极之间接触,从而增加允许施加在p型焊盘电极上的电流。 此外,使用厚壁部可防止在透光性电极与焊盘电极的周面之间发生龟裂。