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1. 发明授权

US06836194B2 Components implemented using latching micro-magnetic switches 失效
标题翻译：使用闭锁微动开关实现的组件
公开(公告)号：US06836194B2
公开(公告)日：2004-12-28
申请号：US10326608
申请日：2002-12-23
申请人： Charles Wheeler , Jun Shen , Meichun Ruan
发明人： Charles Wheeler , Jun Shen , Meichun Ruan
IPC分类号： H01P110
CPC分类号： H01H50/005 , H01H2050/007
摘要： A method and apparatus for controlling the coupling of a circuit into a signal path is described. A moveable element is supported by a substrate and has a magnetic material and a long axis. At least one magnet produces a first magnetic field. The first magnetic field induces a magnetization in the magnetic material. The magnetization is characterized by a magnetization vector pointing in a direction along the long axis of the moveable element. The first magnetic field is approximately perpendicular to a major central portion of the long axis. A coil produces a second magnetic field to switch the moveable element between first and second stable states. Only temporary application of the second magnetic field is required to change direction of the magnetization vector, which causes the moveable element to switch between the first and second stable states. In the first stable state, the moveable element does not couple the circuit in series with a signal. In the second stable state, the moveable element couples the circuit in series with the signal.
摘要翻译：描述了一种用于控制电路耦合到信号路径中的方法和装置。可移动元件由衬底支撑并且具有磁性材料和长轴。至少一个磁体产生第一磁场。第一磁场在磁性材料中引起磁化。磁化的特征在于沿着可移动元件的长轴的方向指向的磁化矢量。第一磁场大致垂直于长轴的主要中心部分。线圈产生第二磁场以在第一和第二稳定状态之间切换可移动元件。仅需要临时施加第二磁场来改变磁化矢量的方向，这导致可移动元件在第一和第二稳定状态之间切换。在第一稳定状态下，可移动元件不将电路与信号串联。在第二稳定状态下，可移动元件将电路与信号串联。

2. 发明授权

US06806788B1 Micromachine switch 失效
标题翻译：微机械开关
公开(公告)号：US06806788B1
公开(公告)日：2004-10-19
申请号：US09958018
申请日：2002-01-28
申请人： Tsunehisa Marumoto
发明人： Tsunehisa Marumoto
IPC分类号： H01P110
CPC分类号： H01P1/127 , H01H1/20 , H01H59/0009
摘要： A micromachine switch includes a driving part (12) for displacing a contact (11) on the basis of a control signal, a first control signal line (4) for applying the control signal to the driving part, and a first RF signal inhibiting part (3) connected to the first control signal line to inhibit, from passing therethrough, an RF signal flowing RF signal lines (1a, 1b). With this arrangement, an insertion loss of the micromachine switch can be reduced, and the RF characteristic of a circuit using the micromachine switch can be improved.
摘要翻译：微机械开关包括用于基于控制信号移动触点（11）的驱动部分（12），用于将控制信号施加到驱动部分的第一控制信号线（4）和第一RF信号抑制部分（3），连接到第一控制信号线，以阻止流过RF信号线（1a，1b）的RF信号。通过这种布置，可以减小微机械开关的插入损耗，并且可以提高使用微机械开关的电路的RF特性。

3. 发明授权

US06765454B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06765454B2
公开(公告)日：2004-07-20
申请号：US10270503
申请日：2002-10-16
申请人： Yoshihiro Tsukahara
发明人： Yoshihiro Tsukahara
IPC分类号： H01P110
CPC分类号： H01P1/15 , G01S7/034
摘要： A semiconductor device includes a switching element, for example, a Schottky barrier diode, which controls transmission/cutoff of a signal transmitted between two portions of a transmission line. An anode electrode of the switching element is interposed between the two portions of the transmission line and the longitudinal direction of the anode electrode is aligned with the longitudinal direction of the transmission line. A cathode electrode of the switching element is disposed on at least one of the widthwise sides of the anode electrode, and is connected to ground.
摘要翻译：半导体器件包括开关元件，例如肖特基势垒二极管，其控制在传输线的两个部分之间传输的信号的传输/切断。开关元件的阳极设置在传输线的两个部分之间，并且阳极电极的纵向方向与传输线的纵向对准。开关元件的阴极设置在阳极电极的宽度方向的至少一个上，并且与地连接。

4. 发明授权

US06744338B2 Resonant operation of MEMS switch 有权
标题翻译： MEMS开关的谐振运算
公开(公告)号：US06744338B2
公开(公告)日：2004-06-01
申请号：US10054409
申请日：2001-11-13
申请人： Vladimir Nikitin
发明人： Vladimir Nikitin
IPC分类号： H01P110
CPC分类号： H01H59/0009 , H01G5/16 , H01G5/18 , H01G5/40 , H01H2059/0036 , H01H2059/0063 , H01P1/127 , Y10T307/826
摘要： A switch arrangement includes a MEMS switch connected to a voltage supply system. The MEMS switch has a mechanical resonant frequency. The voltage supply system has a capability for supplying a voltage with a frequency corresponding to the mechanical resonant frequency of the switch. A method includes providing a MEMS switch including a movable part which has a mechanical resonant frequency, and then supplying an AC voltage to the movable part. The AC voltage has a frequency corresponding to the mechanical resonant frequency of the movable part.
摘要翻译：开关装置包括连接到电压供应系统的MEMS开关。 MEMS开关具有机械谐振频率。电压供应系统具有提供具有与开关的机械谐振频率对应的频率的电压的能力。一种方法包括提供一种MEMS开关，其包括具有机械共振频率的可移动部件，然后向可动部件提供AC电压。 AC电压具有与可动部的机械谐振频率对应的频率。

5. 发明授权

US06587021B1 Micro-relay contact structure for RF applications 失效
标题翻译：用于射频应用的微型继电器触点结构
公开(公告)号：US06587021B1
公开(公告)日：2003-07-01
申请号：US09710989
申请日：2000-11-09
申请人： Richard D. Streeter
发明人： Richard D. Streeter
IPC分类号： H01P110
CPC分类号： H01H1/0036 , H01H1/06 , H01H1/20 , H01H1/32 , H01H1/66 , H01H9/40 , H01H2001/0078
摘要： A MEM relay device includes a flexible multi-point contact system with a self-aligning structure. The inventive relay includes a first signal contact electrically connected to a first set of flexible electrically conductive signal teeth and a second signal contact electrically connected to a second set of flexible electrically conductive signal teeth. An actuator, selectively moves a shorting contact between an open and closed position. In the closed position, two sets of flexible electrically conductive shorting teeth mesh with a first set of flexible electrically conductive signal teeth and the second set of flexible electrically conductive signal teeth creating a conductive path between the two signal contacts. The contact structure facilitates fabrication using a deep reactive ion etch (DRIE) process and brings signal and actuator contacts to an edge of each die.
摘要翻译： MEM继电器装置包括具有自对准结构的灵活多点接触系统。本发明的继电器包括电连接到第一组柔性导电信号齿的第一信号触点和电连接到第二组柔性导电信号齿的第二信号触点。致动器，选择性地在打开和关闭位置之间移动短路触点。在关闭位置，两组柔性导电短路齿与第一组柔性导电信号齿啮合，第二组柔性导电信号齿在两个信号触点之间产生导电路径。接触结构有利于使用深反应离子蚀刻（DRIE）工艺的制造，并将信号和致动器触点带到每个管芯的边缘。

6. 发明授权

US06459344B1 Switch assembly and method of forming the same 失效
公开(公告)号：US06459344B1
公开(公告)日：2002-10-01
申请号：US09810681
申请日：2001-03-19
申请人： Anthony M. Pavio , Jenn-Hwa Huang , Wang-Chang Gu
发明人： Anthony M. Pavio , Jenn-Hwa Huang , Wang-Chang Gu
IPC分类号： H01P110
CPC分类号： H01H1/0036 , H01H19/00
摘要： A microelectromechanical system (MEMS) switch assembly (10) and a method of forming the MEMBS switch assembly (10) is provided that includes a switching member (12) having a first portion (34) that is at least partially formed with a first material having a first dielectric constant and a second portion (36) that is at least partially formed with a second material having a second dielectric constant. Furthermore, the switching member (12) further includes a first lead (14) spaced apart from a second lead (16) for contacting the switching member (12). In operation, the switching member (12) is configured for movement such that the first portion (34) and second portion (36) of the switching member (12) can provide variable electrical connections between the first lead (14) and second lead (16).

7. 发明授权

US06396368B1 CMOS-compatible MEM switches and method of making 失效
标题翻译： CMOS兼容MEM开关及制作方法
公开(公告)号：US06396368B1
公开(公告)日：2002-05-28
申请号：US09438085
申请日：1999-11-10
申请人： Lap-Wai Chow , Tsung-Yuan Hsu , Daniel J. Hyman , Robert Y. Loo , Paul Ouyang , James H. Schaffner , Adele Schmitz , Robert N. Schwartz
发明人： Lap-Wai Chow , Tsung-Yuan Hsu , Daniel J. Hyman , Robert Y. Loo , Paul Ouyang , James H. Schaffner , Adele Schmitz , Robert N. Schwartz
IPC分类号： H01P110
CPC分类号： B81C1/00246 , B81B2201/014 , B81C2201/014 , B81C2203/0714 , B81C2203/0735 , H01H1/58 , H01H59/0009 , H01H2001/0057
摘要： A microelectromechanical (MEM) switch is fabricated inexpensively by using processing steps which are standard for fabricating multiple metal layer integrated circuits, such as CMOS. The exact steps may be adjusted to be compatible with the process of a particular foundry, resulting in a device which is both low cost and readily integrable with other circuits. The processing steps include making contacts for the MEM switch from metal plugs which are ordinarily used as vias to connect metal layers which are separated by a dielectric layer. Such contact vias are formed on either side of a sacrificial metallization area, and then the interconnect metallization is removed from between the contact vias, leaving them separated. Dielectric surrounding the contacts is etched back so that they protrude toward each other. Thus, when the contacts are moved toward each other by actuating the MEM switch, they connect firmly without obstruction. Tungsten is typically used to form vias in CMOS processes, and it makes an excellent contact material, but other via metals may also be employed as contacts. Interconnect metallization may be employed for other structural and interconnect needs of the MEM switch, and is preferably standard for the foundry and process used. Various metals and dielectric materials may be used to create the switches, but in a preferred embodiment the interconnect metal layers are aluminum and the dielectric material is SiO2, materials which are fully compatible with standard four-layer CMOS fabrication processes.
摘要翻译：通过使用标准制造多个金属层集成电路（如CMOS）的处理步骤，廉价地制造了微机电（MEM）开关。可以将精确的步骤调整为与特定代工厂的过程兼容，从而导致低成本且易于与其他电路集成的装置。处理步骤包括通过通常用作通孔的金属插头进行MEM开关的接触，以连接由电介质层分离的金属层。这种接触通孔形成在牺牲金属化区域的任一侧，然后从接触通孔之间移除互连金属化，使它们分离。围绕触点的介质被回蚀，使得它们彼此突出。因此，当通过致动MEM开关使触点彼此移动时，它们牢固地连接而不阻塞。钨通常用于在CMOS工艺中形成通孔，并且它制成优良的接触材料，但也可以使用其它通孔金属作为接触。互连金属化可以用于MEM开关的其他结构和互连需求，并且优选地是用于所使用的铸造和工艺的标准。可以使用各种金属和介电材料来制造开关，但是在优选实施例中，互连金属层是铝，并且介电材料是SiO 2，与标准四层CMOS制造工艺完全兼容的材料。

8. 发明授权

US06218912B1 Microwave switch with grooves for isolation of the passages 有权
标题翻译：微波开关带槽，用于隔离通道
公开(公告)号：US06218912B1
公开(公告)日：2001-04-17
申请号：US09291384
申请日：1999-04-14
申请人： Bernd Mayer
发明人： Bernd Mayer
IPC分类号： H01P110
CPC分类号： H01P1/122
摘要： The microwave switch includes a housing (1) and a rotor (2) having a rotor axis (A). The rotor (2) includes respective plate-shaped parts (10,20) having corresponding ring-shaped outer surfaces (OS, OS′) and walls (15 to 18) extending between the plate-shaped parts. The rotor (2) is provided with through-going passages (7,8,9) extending transversely to the rotor axis (A) between the plate-shaped parts (10,20) and the walls (15 to 18). Grooves (6) for improving isolation of the passages (7,8,9) are provided only in the ring-shaped outer surfaces (OS, OS′) and extend longitudinally substantially parallel to the rotor axis (A). The grooves (6) open into the passages and the passages are bounded by the plate-shaped parts (10,20) in both directions of the rotor axis.
摘要翻译：微波开关包括壳体（1）和具有转子轴线（A）的转子（2）。转子（2）包括具有对应的环形外表面（OS，OS'）和在板状部件之间延伸的壁（15至18）的各自的板状部件（10,20）。转子（2）设置有横向于板形部件（10,20）和壁（15至18）之间的转子轴线（A）延伸的通道（7,8,9）。仅在环形外表面（OS，OS'）中提供用于改善通道（7,8,9）隔离的槽（6），并且基本上平行于转子轴线（A）延伸。凹槽（6）通向通道，通道在转子轴线的两个方向上被板状部分（10,20）限定。

9. 发明授权

US06188301B1 Switching structure and method of fabrication 有权
标题翻译：开关结构和制造方法
公开(公告)号：US06188301B1
公开(公告)日：2001-02-13
申请号：US09192103
申请日：1998-11-13
申请人： William Paul Kornrumpf , Robert John Wojnarowski
发明人： William Paul Kornrumpf , Robert John Wojnarowski
IPC分类号： H01P110
CPC分类号： H01H1/0036 , H01H61/0107 , H01H2001/0042 , H01H2001/0073 , H01H2001/0084 , H01H2061/006 , Y10T29/49105 , Y10T29/49128 , Y10T29/49155
摘要： A switch structure having a base surface; a first high density interconnect (HDI) plastic interconnect layer overlying the base surface layer; a cavity within the HDI plastic interconnect layer; at least one patterned shape memory alloy (SMA) layer overlying the HDI plastic interconnect layer and the cavity, and at least one patterned conductive layer over the at least one patterned SMA layer; a fixed contact pad within the cavity and attached to the base surface and a movable contact pad attached to a portion of the first patterned SMA layer within the cavity such that when the first and second patterned SMA layers and the first and second patterned metallized layers are in a first stable position, the movable contact pad touches the fixed contact pad, thereby providing an electrical connection and forming a closed switch. The structure has a second stable position in which the SMA and metallized layers are flexed away from the cavity so that the contact pads are not in contact and form an open switch.
摘要翻译：具有基面的开关结构; 覆盖基底表面层的第一高密度互连（HDI）塑料互连层; HDI塑料互连层内的空腔; 覆盖HDI塑料互连层和空腔的至少一个图案形状记忆合金（SMA）层，以及至少一个图案化的SMA层上的至少一个图案化导电层; 空腔内的固定接触焊盘并附接到基体表面，以及可移动接触垫，其附接到空腔内的第一图案化SMA层的一部分，使得当第一和第二图案化SMA层和第一和第二图案化金属化层为在第一稳定位置，可动接触垫接触固定接触垫，由此提供电连接并形成闭合的开关。该结构具有第二稳定位置，其中SMA和金属化层从空腔弯曲，使得接触焊盘不接触并形成开放的开关。

10. 发明授权

US06833772B1 RF switch using conductive fluid 失效
标题翻译：射频开关使用导电流体
公开(公告)号：US06833772B1
公开(公告)日：2004-12-21
申请号：US10648913
申请日：2003-08-27
申请人： Stephen B. Brown , James J. Rawnick
发明人： Stephen B. Brown , James J. Rawnick
IPC分类号： H01P110
CPC分类号： H01P5/12 , H01P1/10
摘要： An RF switch (100) which includes a waveguide structure (102) having at least a first (104) and second port (106). The RF switch (100) also includes a dielectric structure defining at least a first cavity (136) disposed at a juncture between the first and second ports. The dielectric structure can define a plurality of elongated fluid cavities (136) at the juncture extending between opposing walls (116, 118) of the waveguide structure (102). The RF switch (100) also can include a fluid control system (150) that moves a conductive fluid (138) into the first cavity (136) in a first operational state and at least partially purges the conductive fluid (136) from the first cavity (138) in a second operational state. A conductive path can be provided between the conductive fluid and at least one wall (1116, 118) of the waveguide structure (102).
摘要翻译：一种RF开关（100），其包括具有至少第一（104）和第二端口（106）的波导结构（102）。 RF开关（100）还包括限定设置在第一和第二端口之间的接合处的至少第一空腔（136）的电介质结构。电介质结构可以在波导结构（102）的相对壁（116,118）之间的接合处限定多个细长流体腔（136）。 RF开关（100）还可以包括流体控制系统（150），其在第一操作状态下将导电流体（138）移动到第一空腔（136）中，并且至少部分地从第一操作状态清除导电流体（136）空腔（138）处于第二操作状态。可以在导电流体和波导结构（102）的至少一个壁（1116,118）之间提供导电路径。

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