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1. 发明授权

US4469949A Electron beam pattern transfer device and method for aligning mask and semiconductor wafer 失效
标题翻译：用于对准掩模和半导体晶片的电子束图案转移装置和方法
公开(公告)号：US4469949A
公开(公告)日：1984-09-04
申请号：US374724
申请日：1982-05-04
申请人： Ichiro Mori , Kazuyoshi Sugihara , Toshiaki Shinozaki , Toru Tojo
发明人： Ichiro Mori , Kazuyoshi Sugihara , Toshiaki Shinozaki , Toru Tojo
IPC分类号： H01L21/027 , H01J37/304 , H01L21/30 , H01J37/00
CPC分类号： H01L21/30 , H01J37/3045
摘要： According to the invention an electron beam pattern transfer device with an improved alignment means is provided.A first and a second mark M.sub.1, M.sub.2 for alignment purposes are formed on the surface of the wafer and the wafer holder, respectively. The first mark M.sub.1 is formed on the wafer by conventional lithographic technique and the second mark M.sub.2 consists of a hole or a heavy metal, such as Ta or Ta.sub.2 O.sub.5. A third alignment mark M.sub.3 is provided on the photocathode mask having a position corresponding to M.sub.2 on the wafer holder and spaced a known distance L.sub.2 from an imaginary reference position M.sub.4 on the mask. The first step of the alignment process requires the detection of a relative distance L.sub.1 between the first and second marks M.sub.1, M.sub.2 by conventional detecting means, such as an optical measuring means. In the next step, the relative position of the photocathode mask and the wafer holder is adjusted so that the distance between the marks M.sub.2 and M.sub.3 is made substantially equal to the difference between the distance L.sub.1 and the known distance L.sub. 2.
摘要翻译：根据本发明，提供了具有改进的对准装置的电子束图案转印装置。分别在晶片和晶片保持器的表面上形成用于对准目的的第一和第二标记M1，M2。第一标记M1通过常规平版印刷技术在晶片上形成，第二标记M2由孔或重金属如Ta或Ta2O5组成。第三对准标记M3设置在光电阴极掩模上，其具有对应于晶片保持器上的M2的位置，并且与掩模上的假想参考位置M4隔开已知距离L2。对准处理的第一步骤需要通过诸如光学测量装置的常规检测装置检测第一和第二标记M1，M2之间的相对距离L1。在下一步骤中，调整光电阴极掩模和晶片保持器的相对位置，使得标记M2和M3之间的距离基本上等于距离L1和已知距离L 2之间的差。

2. 发明授权

US4467210A Electron-beam image transfer device 失效
标题翻译：电子束图像传输装置
公开(公告)号：US4467210A
公开(公告)日：1984-08-21
申请号：US379712
申请日：1982-05-18
申请人： Kazuyoshi Sugihara , Toru Tojo , Ichiro Mori , Toshiaki Shinozaki
发明人： Kazuyoshi Sugihara , Toru Tojo , Ichiro Mori , Toshiaki Shinozaki
IPC分类号： H01L21/027 , B65G49/07 , H01J37/18 , H01L21/30 , H01L21/677 , H01L21/68 , B23Q3/157
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F7/2037 , H01J37/18 , H01L21/30 , H01L21/67766 , H01L21/67796 , H01L21/682
摘要： An electron-beam image transfer device includes an evacuated vessel having a main chamber and spare chamber extended therefrom and a specimen holder and mask holder disposed in the main chamber. A subchamber is formed near the spare chamber to house a specimen. The specimen in the subchamber is transferred to the spare chamber by a movable support through an opening which is always kept in an airtight state, and then brought to the specimen holder by a transferring mechanism.
摘要翻译：电子束图像转印装置包括具有从其延伸的主室和备用室的抽真空容器和设置在主室中的试样保持器和掩模保持架。在备用室附近形成一个子室以容纳样品。子室中的样品通过可移动的支撑件通过总是保持在气密状态的开口转移到备用室，然后通过传送机构带到样品保持器。

3. 发明授权

US4572956A Electron beam pattern transfer system having an autofocusing mechanism 失效
标题翻译：具有自动聚焦机构的电子束图案转印系统
公开(公告)号：US4572956A
公开(公告)日：1986-02-25
申请号：US525419
申请日：1983-08-22
申请人： Toru Tojo , Ichiro Mori , Toshiaki Shinozaki , Kazuyoshi Sugihara , Mitsuo Tabata , Chikara Itoh
发明人： Toru Tojo , Ichiro Mori , Toshiaki Shinozaki , Kazuyoshi Sugihara , Mitsuo Tabata , Chikara Itoh
IPC分类号： G03F7/207 , H01J37/21 , H01J37/304 , H01J37/317 , H01J37/30
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/21 , H01J37/304 , H01J37/3175 , H01J2237/216 , H01J2237/30455 , H01J2237/31779 , Y10S505/879
摘要： An electron beam pattern transfer system is disclosed which includes a photoelectric transducing mask disposed within a vacuum container and adapted to transfer a photoelectron beam pattern corresponding to a pattern of the mask onto a sample according to an amount of an incident light, a DC voltage generator connected to vary a voltage applied between the mask and the sample, and a focusing coil of a superconductive magnet for creating a magnetic field of a predetermined intensity between the mask and the sample. When a mask-to-sample distance and/or magnetic field intensity varies undesirably, the variation is electrically detected by detectors. In order to compensate for the defocusing of the photoelectron beam pattern on the sample due to the above-mentioned variation, a microprocessor automatically calculates an amount of correction with respect to the intensity of the electric field between the mask and the sample, on a real-time basis and supplies its control signal to the DC voltage generator.
摘要翻译：公开了一种电子束图案转印系统，其包括设置在真空容器内并适于根据入射光量将对应于掩模图案的光电子束图案转移到样品上的光电转换掩模，直流电压发生器连接以改变施加在掩模和样品之间的电压，以及用于在掩模和样品之间产生预定强度的磁场的超导磁体的聚焦线圈。当掩模到采样距离和/或磁场强度变化不期望时，变化由检测器电检测。为了补偿由于上述变化而导致的样品上的光电子束图案的散焦，微处理器自动地计算相对于掩模和样品之间的电场强度的校正量，实际上并将其控制信号提供给直流电压发生器。

4. 发明授权

US4366383A Electron beam type pattern transfer apparatus 失效
标题翻译：电子束式图案转印装置
公开(公告)号：US4366383A
公开(公告)日：1982-12-28
申请号：US165618
申请日：1980-07-03
申请人： Shunichi Sano , Toshiaki Shinozaki , Ichiro Mori
发明人： Shunichi Sano , Toshiaki Shinozaki , Ichiro Mori
IPC分类号： H01L21/027 , H01J37/317 , H01L21/30 , A61K27/02 , G01N21/64
CPC分类号： H01J37/3175 , B82Y10/00 , B82Y40/00 , H01L21/30 , H01J2237/04735 , H01J2237/04922 , H01J2237/142 , H01J2237/31779 , Y10S505/879
摘要： An electron beam type pattern transfer apparatus has a photoelectric mask and a sample in a vacuum container made of non-magnetic material. The photoelectric mask is adapted to receive an ultraviolet ray from a light source and emit photoelectrons corresponding to a predetermined transfer pattern and the sample is disposed in parallel with the photoelectric mask with a predetermined distance left therebetween and illuminated with the photoelectrons to form a resist image thereon which corresponds to the transfer pattern. A power source for applying a voltage for accelerating the photoelectrons emitted is connected between the photoelectric mask and the sample. A pair of focusing magnets are disposed around the axis of the vacuum container such that they are located one at one outer side and one in an opposite outer side of the vacuum container to permit a vertical magnetic field to be created between the photoelectric mask and the sample. The focusing magnets have superconductive coils and are driven in a persistent mode.
摘要翻译：电子束型图案转印装置在由非磁性材料制成的真空容器中具有光电掩模和样品。光电掩模适于从光源接收紫外线并发射对应于预定转印图案的光电子，并且将样品与光电掩模平行放置并保持在预定距离处并用光电子照射以形成抗蚀剂图像对应于转印图案。用于施加用于加速发射的光电子的电压的电源连接在光电掩模和样品之间。一对聚焦磁铁设置在真空容器的轴线周围，使得它们位于真空容器的一个外侧和一个在相对的外侧中，从而允许在光电面罩和样品。聚焦磁体具有超导线圈并以持续模式驱动。

5. 发明授权

US4560278A Fixed-slit type photoelectric microscope 失效
标题翻译：固定狭缝型光电显微镜
公开(公告)号：US4560278A
公开(公告)日：1985-12-24
申请号：US513452
申请日：1983-07-13
申请人： Toshiaki Shinozaki , Ichiro Mori
发明人： Toshiaki Shinozaki , Ichiro Mori
IPC分类号： G01B9/04 , G01B11/00 , G02B21/00 , G02B26/04 , G02F1/09 , H01L21/027 , H01L21/66
CPC分类号： G01B9/04 , G02B21/00 , G02B26/04
摘要： A fixed-slit type photoelectric microscope comprises an irradiation system for irradiating a linear pattern with light beam, an objective for forming an image of the linear pattern, a single slit disposed at a point conjugate to the linear pattern with respect to the objective, a photoelectric conversion element for converting the light beam from the slit into an electrical signal, a rectifying circuit for rectifying an electrical signal from the photoelectric conversion element, and an indicator for visualizing the rectified signal. The irradiation system generates a pair of polarized light beams with planes of polarization orthogonal to each other and alternately illuminates the linear pattern with the pair of polarized light beams at fixed periods. For deflecting the pair of polarized light beams from the linear pattern in different directions, an optical deflecting element is provided between the linear pattern and the slit. Different portions of the slit are illuminated by the pair of polarized light beams deflected by the optical deflecting elements.
摘要翻译：固定狭缝型光电显微镜包括用于用光束照射线性图案的照射系统，用于形成线状图案的图像的目标，设置在与该物镜相对应的线状图案的点处的单个狭缝，用于将来自狭缝的光束转换成电信号的光电转换元件，用于对来自光电转换元件的电信号进行整流的整流电路和用于可视化整流信号的指示器。照射系统产生一对具有彼此正交的偏振平面的偏振光束，并且以固定的周期以一对偏振光束交替地照射线状图案。为了沿着不同的方向偏转来自线状图案的一对偏振光束，在线状图案和狭缝之间设置有光学偏转元件。狭缝的不同部分由被光学偏转元件偏转的一对偏振光束照射。

6. 发明授权

US4748327A Method of inspecting masks and apparatus thereof 失效
标题翻译：检查掩模的方法及其装置
公开(公告)号：US4748327A
公开(公告)日：1988-05-31
申请号：US871792
申请日：1986-06-09
申请人： Toshiaki Shinozaki , Sadao Sasaki
发明人： Toshiaki Shinozaki , Sadao Sasaki
IPC分类号： G01N23/18 , G01B15/00 , G01N23/227 , G03F1/00 , G03F1/84 , G03F1/86 , H01L21/027 , H01L21/30 , H01L21/66 , G01F23/00 , H01J37/30
CPC分类号： G03F1/86 , G01N23/2273
摘要： A method of inspecting masks which have lithographic patterns thereon, comprises the steps of depositing an electron-emissive layer on the patterned first major surface of the mask, the electron-emissive layer on the clear area of the patterned surface emitting electron beams when irradiated with energy beams, applying energy beams to the patterned surface from behind through the second major surface of the mask, guiding the electron beams emitted from the electron-emissive layer to an electron optical system, thereby forming an electron beam image of the pattern on a detector means, and comparing detection signals corresponding to the pattern and output by the detector means with reference signals representing the design shape and size of the pattern, thereby to inspect the mask.
摘要翻译：检查其上具有光刻图案的掩模的方法包括以下步骤：在掩模的图案化的第一主表面上沉积电子发射层，在被图案化表面的透明区域上发射电子束的电子发射层，当被照射时能量束，从后面通过掩模的第二主表面将能量束施加到图案化表面，将从电子发射层发射的电子束引导到电子光学系统，从而在检测器上形成图案的电子束图像并且将由检测器装置对应于图案和输出的检测信号与表示图案的设计形状和尺寸的参考信号进行比较，从而检查掩模。

7. 发明授权

US4717645A Method and apparatus for forming resist pattern 失效
标题翻译：用于形成抗蚀剂图案的方法和装置
公开(公告)号：US4717645A
公开(公告)日：1988-01-05
申请号：US789366
申请日：1985-10-22
申请人： Yoshihide Kato , Kei Kirita , Toshiaki Shinozaki , Fumiaki Shigemitsu , Kinya Usuda , Takashi Tsuchiya
发明人： Yoshihide Kato , Kei Kirita , Toshiaki Shinozaki , Fumiaki Shigemitsu , Kinya Usuda , Takashi Tsuchiya
IPC分类号： H01L21/30 , G03F7/16 , G03C5/00
CPC分类号： G03F7/168 , Y10S430/168
摘要： A method for forming a highly precise resist pattern with good reproducibility has the steps of: applying a resist material to a substrate to form a resist film; baking the resist film; cooling the resist film in a controlled manner; selectively irradiating the resist film with one of the electromagnetic waves in a predetermined wavelength range and particle beam having predetermined energy; and developing the resist film to form a resist pattern.

8. 发明授权

US4218621A Electron beam exposure apparatus 失效
标题翻译：电子束曝光装置
公开(公告)号：US4218621A
公开(公告)日：1980-08-19
申请号：US915869
申请日：1978-06-15
申请人： Mamoru Nakasuji , Toshiaki Shinozaki
发明人： Mamoru Nakasuji , Toshiaki Shinozaki
IPC分类号： H01J37/30 , A61K27/02
CPC分类号： H01J37/3007
摘要： Disclosed is an electron beam exposure apparatus which comprises a first deflection system for deflecting an electron beam emitted from an electron gun and an objective electron lens for converging the deflected electron beam to apply the beam to a workpiece. Interposed between the objective lens and the workpiece is a second deflection system for deflecting the electron beam in parallel with the optical axis of the apparatus.
摘要翻译：公开了一种电子束曝光装置，其包括用于偏转从电子枪发射的电子束的第一偏转系统和用于会聚偏转的电子束以将光束施加到工件的物镜电子透镜。位于物镜与工件之间的是用于使电子束平行于设备的光轴偏转的第二偏转系统。

9. 发明授权

US4897337A Method and apparatus for forming resist pattern 失效
标题翻译：用于形成抗蚀剂图案的方法和装置
公开(公告)号：US4897337A
公开(公告)日：1990-01-30
申请号：US108767
申请日：1987-10-15
申请人： Yoshihide Kato , Kei Kirita , Toshiaki Shinozaki , Fumiaki Shigemitsu , Kinya Usuda , Takashi Tsuchiya
发明人： Yoshihide Kato , Kei Kirita , Toshiaki Shinozaki , Fumiaki Shigemitsu , Kinya Usuda , Takashi Tsuchiya
IPC分类号： G03F7/16
CPC分类号： G03F7/168 , Y10S430/168
摘要： A method for forming a highly precise resist pattern with good reproducibility has the steps of: applying a resist material to a substrate to form a resist film; baking the resist film; cooling the resist film in a controlled manner; selectively irradiating the resist film with one of electromagnetic waves in a predetermined wavelength range and particle beam having predetermined energy; and developing the resist film to form a resist pattern.
摘要翻译：用于形成具有良好再现性的高精度抗蚀剂图案的方法具有以下步骤：将抗蚀剂材料施加到基底以形成抗蚀剂膜; 烘烤抗蚀膜; 以受控的方式冷却抗蚀剂膜; 选择性地照射预定波长范围的电磁波中的一个和具有预定能量的粒子束; 并且使抗蚀剂膜显影以形成抗蚀剂图案。

10. 发明授权

US4411013A System for transferring a fine pattern onto a target 失效
标题翻译：将精细图案转移到目标上的系统
公开(公告)号：US4411013A
公开(公告)日：1983-10-18
申请号：US332203
申请日：1981-12-18
申请人： Shinichiro Takasu , Toshiaki Shinozaki
发明人： Shinichiro Takasu , Toshiaki Shinozaki
IPC分类号： G01N23/223 , G03F1/00 , G03F1/54 , G03F7/20 , H01L21/027 , H01L21/30 , G21K5/00
CPC分类号： G03F1/22 , G03F7/2039 , G03F7/70283 , G03F7/70316 , G03F7/7035 , H01L21/30
摘要： An X-ray system for transferring a fine pattern onto a target has a mask, on the surface of which is formed an X-ray absorbing layer in a predetermined pattern and which is made of a single crystal of high regularity. Parallel monochromic X-rays become incident on the lattice plane of the single crystal at an angle .theta.. Diffraction X-rays emerging from the lattice plane are projected onto the surface of a wafer in the normal direction. An X-ray resist layer is formed on the surface of the wafer. Since incident X-rays and diffraction X-rays are absorbed by the X-ray absorbing layer on the mask, the pattern defined by the layer is projected on the X-ray resist layer.
摘要翻译：用于将精细图案转印到靶上的X射线系统具有掩模，其表面形成为预定图案的X射线吸收层，并且由具有高规则度的单晶制成。平行的单色X射线以角度θ入射到单晶的晶格面上。从晶格平面出射的衍射X射线在正常方向上投射到晶片的表面上。在晶片的表面上形成X射线抗蚀剂层。由于入射的X射线和衍射X射线被掩模上的X射线吸收层吸收，所以由该层限定的图案被投影在X射线抗蚀剂层上。

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