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1. 发明授权

US07332066B2 Apparatus and method for electrochemically depositing metal on a semiconductor workpiece 失效
标题翻译：在半导体工件上电化学沉积金属的装置和方法
公开(公告)号：US07332066B2
公开(公告)日：2008-02-19
申请号：US11053050
申请日：2005-02-07
申请人： Linlin Chen , Gregory J. Wilson , Paul R. McHugh , Robert A. Weaver , Thomas L. Ritzdorf
发明人： Linlin Chen , Gregory J. Wilson , Paul R. McHugh , Robert A. Weaver , Thomas L. Ritzdorf
IPC分类号： C25D7/12 , C25D17/00 , C25D17/12
CPC分类号： H01L21/76868 , C25D3/38 , C25D5/08 , C25D5/10 , C25D5/50 , C25D7/123 , C25D17/02 , C25D17/10 , C25D17/12 , H01L21/288 , H01L21/2885 , H01L21/76843 , H01L21/76873 , H01L21/76877 , H01L2221/1089 , Y10S204/07 , Y10T428/12493
摘要： A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.
摘要翻译：用于对诸如半导体工件的工件进行金属化的工艺。在一个实施方案中，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积方法增强已经沉积在阻挡层上的超薄铜籽晶层作为PVD。所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。

2. 发明授权

US07189318B2 Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece 有权
公开(公告)号：US07189318B2
公开(公告)日：2007-03-13
申请号：US09866391
申请日：2001-05-24
申请人： Gregory J. Wilson , Paul R. McHugh , Robert A. Weaver , Thomas L. Ritzdorf
发明人： Gregory J. Wilson , Paul R. McHugh , Robert A. Weaver , Thomas L. Ritzdorf
IPC分类号： B01J10/00 , G05B21/00 , G05B15/00 , G05D11/00 , G05D7/00
CPC分类号： C25D21/12 , C25D17/001 , C25F3/30
摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters. In some embodiments, the facility analyzes a profile of the seed layer applied to a workpiece, and determines and communicates to a material deposition tool a set of control parameters designed to deposit material on the workpiece in a manner that compensates for deficiencies in the seed layer.

3. 发明授权

US07115196B2 Apparatus and method for electrochemically depositing metal on a semiconductor workpiece 有权
标题翻译：在半导体工件上电化学沉积金属的装置和方法
公开(公告)号：US07115196B2
公开(公告)日：2006-10-03
申请号：US10377397
申请日：2003-02-27
申请人： Linlin Chen , Gregory J. Wilson , Paul R. McHugh , Robert A. Weaver , Thomas L. Ritzdorf
发明人： Linlin Chen , Gregory J. Wilson , Paul R. McHugh , Robert A. Weaver , Thomas L. Ritzdorf
IPC分类号： C25D7/12 , C25D5/10
CPC分类号： H01L21/76868 , C25D3/38 , C25D5/08 , C25D5/10 , C25D5/50 , C25D7/123 , C25D17/02 , C25D17/10 , C25D17/12 , H01L21/288 , H01L21/2885 , H01L21/76843 , H01L21/76873 , H01L21/76877 , H01L2221/1089 , Y10S204/07 , Y10T428/12493
摘要： A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.
摘要翻译：用于对诸如半导体工件的工件进行金属化的工艺。在一个实施方案中，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积方法增强已经沉积在阻挡层上的超薄铜籽晶层作为PVD。所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。

4. 发明授权

US06565729B2 Method for electrochemically depositing metal on a semiconductor workpiece 有权
标题翻译：在半导体工件上电化学沉积金属的方法
公开(公告)号：US06565729B2
公开(公告)日：2003-05-20
申请号：US09732513
申请日：2000-12-07
申请人： Linlin Chen , Gregory J. Wilson , Paul R. McHugh , Robert A. Weaver , Thomas L. Ritzdorf
发明人： Linlin Chen , Gregory J. Wilson , Paul R. McHugh , Robert A. Weaver , Thomas L. Ritzdorf
IPC分类号： C25D2112
CPC分类号： H01L21/76868 , C25D3/38 , C25D5/08 , C25D5/10 , C25D5/50 , C25D7/123 , C25D17/02 , C25D17/10 , C25D17/12 , H01L21/288 , H01L21/2885 , H01L21/76843 , H01L21/76873 , H01L21/76877 , H01L2221/1089 , Y10S204/07 , Y10T428/12493
摘要： A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.
摘要翻译：用于对诸如半导体工件的工件进行金属化的工艺。在一个实施方案中，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积方法增强已经沉积在阻挡层上的超薄铜籽晶层作为PVD。所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。

5. 发明授权

US07020537B2 Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece 有权
公开(公告)号：US07020537B2
公开(公告)日：2006-03-28
申请号：US09849505
申请日：2001-05-04
申请人： Gregory J. Wilson , Paul R. McHugh , Robert A. Weaver , Thomas L. Ritzdorf
发明人： Gregory J. Wilson , Paul R. McHugh , Robert A. Weaver , Thomas L. Ritzdorf
IPC分类号： G06F19/00
CPC分类号： G05B19/41875 , C25D7/123 , C25D17/001 , C25D21/12 , G05B2219/32182 , G05B2219/32216 , G05B2219/45031 , Y02P90/22 , Y02P90/265
摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a numerical of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the numerical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

6. 发明申请

US20100116671A1 Apparatus and method for electrochemically depositing metal on a semiconductor workpiece 审中-公开
标题翻译：在半导体工件上电化学沉积金属的装置和方法
公开(公告)号：US20100116671A1
公开(公告)日：2010-05-13
申请号：US11543270
申请日：2006-10-03
申请人： Linlin Chen , Gregory J. Wilson , Paul R. McHugh , Robert A. Weaver , Thomas L. Ritzdorf
发明人： Linlin Chen , Gregory J. Wilson , Paul R. McHugh , Robert A. Weaver , Thomas L. Ritzdorf
IPC分类号： C25D21/12
CPC分类号： H01L21/76868 , C25D3/38 , C25D5/08 , C25D5/10 , C25D5/50 , C25D7/123 , C25D17/02 , C25D17/10 , C25D17/12 , H01L21/288 , H01L21/2885 , H01L21/76843 , H01L21/76873 , H01L21/76877 , H01L2221/1089 , Y10S204/07 , Y10T428/12493
摘要： A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.
摘要翻译：用于对诸如半导体工件的工件进行金属化的方法。在一个实施方案中，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积方法增强已经沉积在阻挡层上的超薄铜籽晶层作为PVD。所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。

7. 发明授权

US07160421B2 Turning electrodes used in a reactor for electrochemically processing a microelectronic workpiece 有权
标题翻译：用于电化学处理微电子工件的反应器中的调谐电极
公开(公告)号：US07160421B2
公开(公告)日：2007-01-09
申请号：US09866463
申请日：2001-05-24
申请人： Gregory J. Wilson , Paul R. McHugh , Robert A. Weaver , Thomas L. Ritzdorf
发明人： Gregory J. Wilson , Paul R. McHugh , Robert A. Weaver , Thomas L. Ritzdorf
IPC分类号： C25D17/00 , C25D17/12 , C25D7/12 , C25D5/16
CPC分类号： C25D5/08 , C25D7/123 , C25D17/001 , C25D17/12 , C25D21/12 , Y10S204/07
摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.
摘要翻译：描述了一种用于选择和精炼用于在处理室中处理微电子工件的电参数的设备。该设备最初根据处理室的数学模型或从操作实际处理室得到的实验数据来初始配置电参数。在用初始参数配置处理工件之后，测量结果，并且使用基于处理室的数学模型的灵敏度矩阵来选择校正在第一工件的处理中测量的任何缺陷的新参数。然后将这些参数用于处理可以类似地测量的第二工件，并且用于进一步改进参数的结果。

8. 发明授权

US07102763B2 Methods and apparatus for processing microelectronic workpieces using metrology 有权
公开(公告)号：US07102763B2
公开(公告)日：2006-09-05
申请号：US09902491
申请日：2001-07-09
申请人： Thomas L. Ritzdorf , Steve L. Eudy , Gregory J. Wilson , Paul R. McHugh , Robert A. Weaver , Brian Aegerter , Curt Dundas , Steven L. Peace
发明人： Thomas L. Ritzdorf , Steve L. Eudy , Gregory J. Wilson , Paul R. McHugh , Robert A. Weaver , Brian Aegerter , Curt Dundas , Steven L. Peace
IPC分类号： G01B11/28 , H01L21/306 , B05C11/00
CPC分类号： H01L21/67173 , H01L21/67103 , H01L21/67178 , H01L21/6719 , H01L21/67219 , H01L21/6723 , H01L21/67751
摘要： A method and apparatus for processing a microelectronic workpiece using metrology. The apparatus can include one or more processing or transport units, a metrology unit, and a control unit coupled to the metrology unit and at least one of the processing or transport units. The control unit can modify a process recipe or a process sequence of the processing unit based on a feed forward or a feed back signal from the metrology unit. The control unit can also provide instructions to the transport unit to move the workpiece to a selected processing unit. The processing unit can include, inter alia, a seed layer deposition unit, a process layer electrochemical deposition unit, a seed layer enhancement unit, a chemical mechanical polishing unit, and/or an annealing chamber arranged for sequential processing of a workpiece. The processing units can be controlled as an integrated system using one or more metrology units, or a separate metrology unit can provide input to the processing units.

9. 发明授权

US07438788B2 Apparatus and methods for electrochemical processing of microelectronic workpieces 有权
标题翻译：微电子工件电化学处理的装置和方法
公开(公告)号：US07438788B2
公开(公告)日：2008-10-21
申请号：US11096477
申请日：2005-03-29
申请人： Kyle M. Hanson , Thomas L. Ritzdorf , Gregory J. Wilson , Paul R. McHugh
发明人： Kyle M. Hanson , Thomas L. Ritzdorf , Gregory J. Wilson , Paul R. McHugh
IPC分类号： C25D17/02 , C25D7/12
CPC分类号： C25D17/001 , C25D5/18 , C25D7/123 , C25D17/10
摘要： An apparatus and method for electrochemical processing of microelectronic workpieces in a reaction vessel. In one embodiment, the reaction vessel includes: an outer container having an outer wall; a distributor coupled to the outer container, the distributor having a first outlet configured to introduce a primary flow into the outer container and at least one second outlet configured to introduce a secondary flow into the outer container separate from the primary flow; a primary flow guide in the outer container coupled to the distributor to receive the primary flow from the first outlet and direct it to a workpiece processing site; a dielectric field shaping unit in the outer container coupled to the distributor to receive the secondary flow from the second outlet, the field shaping unit being configured to contain the secondary flow separate from the primary flow through at least a portion of the outer container, and the field shaping unit having at least one electrode compartment through which the secondary flow can pass while the secondary flow is separate from the primary flow; an electrode in the electrode compartment; and an interface member carried by the field shaping unit downstream from the electrode, the interface member being in fluid communication with the secondary flow in the electrode compartment, and the interface member being configured to prevent selected matter of the secondary flow from passing to the primary flow.
摘要翻译：用于反应容器中微电子工件的电化学处理的装置和方法。在一个实施例中，反应容器包括：具有外壁的外容器; 分配器，其耦合到所述外部容器，所述分配器具有构造成将主流引入所述外部容器中的第一出口和构造成将二次流引导到与所述主流分离的所述外部容器中的至少一个第二出口; 外部容器中的主要流动引导件联接到分配器以接收来自第一出口的主流并将其引导到工件加工位置; 所述外容器中的电介质场成形单元联接到所述分配器以接收来自所述第二出口的二次流，所述场整形单元构造成容纳所述次流与所述主流分离通过所述外容器的至少一部分，以及所述场成形单元具有至少一个电极室，所述二次流可以通过所述至少一个电极室，而所述二次流与所述主流分离; 电极室中的电极; 以及由所述场成形单元承载在所述电极的下游的界面构件，所述界面构件与所述电极室中的所述次流体流体连通，并且所述界面构件被构造成防止所述二次流的选定物质通过所述主流流。

10. 发明授权

US06747734B1 Apparatus and method for processing a microelectronic workpiece using metrology 有权
标题翻译：使用计量处理微电子工件的装置和方法
公开(公告)号：US06747734B1
公开(公告)日：2004-06-08
申请号：US09612176
申请日：2000-07-08
申请人： Thomas L. Ritzdorf , Steve L. Eudy , Gregory J. Wilson , Paul R. McHugh
发明人： Thomas L. Ritzdorf , Steve L. Eudy , Gregory J. Wilson , Paul R. McHugh
IPC分类号： G01N2188
CPC分类号： H01L21/67173 , H01L21/67103 , H01L21/67207 , H01L21/67219 , H01L21/67253 , H01L21/67276
摘要： A processing apparatus for processing a microelectronic workpiece includes a metrology unit and a control, signal-connected to the metrology unit. The control can modify a process recipe or a process sequence of the processing apparatus based on a feed forward or a feed back signal from the metrology unit. A seed layer deposition tool, a process layer electrochemical deposition tool, and a chemical mechanical polishing tool, arranged for sequential processing of a workpiece, can be controlled as an integrated system using one or more metrology units. A metrology unit can be located at each tool to measure workpiece parameters. Each of the metrology units can be used as a feed forward control and/or a feed back control at each of the tools.
摘要翻译：用于处理微电子工件的处理装置包括测量单元和与计量单元信号连接的控制。该控制可以基于来自计量单元的前馈或反馈信号来修改处理设备的处理配方或处理顺序。布置用于对工件进行连续加工的种子层沉积工具，工艺层电化学沉积工具和化学机械抛光工具可被控制为使用一个或多个计量单元的集成系统。每个工具都可以设置一个测量单元来测量工件参数。每个计量单元可用作每个工具的前馈控制和/或反馈控制。

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