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1. 发明授权

US07538850B2 Panel for display device, manufacturing method thereof and liquid crystal display 有权
标题翻译：显示装置用面板及其制造方法以及液晶显示装置
公开(公告)号：US07538850B2
公开(公告)日：2009-05-26
申请号：US10752968
申请日：2004-01-07
申请人： Dong-Gyu Kim , Shi-Yul Kim , Sang-Soo Kim
发明人： Dong-Gyu Kim , Shi-Yul Kim , Sang-Soo Kim
IPC分类号： G02F1/1339
CPC分类号： G02F1/13394 , G02F1/133512 , G02F2001/136222
摘要： A method for forming a display device includes forming a first panel and a second panel. The step of forming a first panel includes forming a black matrix over portions of a first substrate, forming a common electrode over the black matrix, and forming a spacer over the common electrode and the black matrix. The step of forming the second panel includes forming a pixel electrode over a second substrate. The first panel and the second panel are disposed over one another such that the pixel electrode faces the common electrode and the black matrix with a liquid crystal layer therebetween. A vertical distance between the first panel and the second panel is determined by thicknesses of the spacer and the black matrix.
摘要翻译：一种形成显示装置的方法包括形成第一面板和第二面板。形成第一面板的步骤包括在第一衬底的部分上形成黑色矩阵，在黑色矩阵上形成公共电极，以及在公共电极和黑色矩阵上形成间隔物。形成第二面板的步骤包括在第二衬底上形成像素电极。第一面板和第二面板彼此配置，使得像素电极面对公共电极和黑色矩阵，其间具有液晶层。第一面板和第二面板之间的垂直距离由间隔物和黑色矩阵的厚度决定。

2. 发明申请

US20090225248A1 Panel for Display Device, Manufacturing Method Thereof and Liquid Crystal Display 审中-公开
标题翻译：显示设备面板及其制造方法和液晶显示器
公开(公告)号：US20090225248A1
公开(公告)日：2009-09-10
申请号：US12436495
申请日：2009-05-06
申请人： Dong Gyu Kim , Shi-Yul Kim , Sang-Soo Kim
发明人： Dong Gyu Kim , Shi-Yul Kim , Sang-Soo Kim
IPC分类号： G02F1/1368
CPC分类号： G02F1/13394 , G02F1/133512 , G02F2001/136222
摘要： A method for forming a display device includes forming a first panel and a second panel. The step of forming a first panel includes forming a black matrix over portions of a first substrate, forming a common electrode over the black matrix, and forming a spacer over the common electrode and the black matrix. The step of forming the second panel includes forming a pixel electrode over a second substrate. The first panel and the second panel are disposed over one another such that the pixel electrode faces the common electrode and the black matrix with a liquid crystal layer therebetween. A vertical distance between the first panel and the second panel is determined by thicknesses of the spacer and the black matrix.
摘要翻译：一种形成显示装置的方法包括形成第一面板和第二面板。形成第一面板的步骤包括在第一衬底的部分上形成黑色矩阵，在黑色矩阵上形成公共电极，以及在公共电极和黑色矩阵上形成间隔物。形成第二面板的步骤包括在第二衬底上形成像素电极。第一面板和第二面板彼此配置，使得像素电极面对公共电极和黑色矩阵，其间具有液晶层。第一面板和第二面板之间的垂直距离由间隔物和黑色矩阵的厚度决定。

3. 发明授权

US08455871B2 Thin film transistor array panel and method for manufacturing the same 有权
公开(公告)号：US08455871B2
公开(公告)日：2013-06-04
申请号：US12859792
申请日：2010-08-20
申请人： Chang-Oh Jeong , Woo-Sung Sohn , Dong-Gyu Kim , Shi-Yul Kim , Ki-Yeup Lee , Jean-Ho Song
发明人： Chang-Oh Jeong , Woo-Sung Sohn , Dong-Gyu Kim , Shi-Yul Kim , Ki-Yeup Lee , Jean-Ho Song
IPC分类号： H01L29/04
CPC分类号： H01L33/16 , H01L27/124 , H01L27/1288
摘要： A thin film transistor array panel is provided and includes a gate line, a gate insulating layer covering the gate line, a semiconductor layer disposed on the gate insulating layer, and a data line and a drain electrode disposed on the semiconductor layer. The data line and the drain electrode have a dual-layered structure including a lower layer and an upper layer with the lower layer having a first portion protruded outside the upper layer and the semiconductor layer having a second portion protruded outside the edge of the lower layer.

4. 发明授权

US08017949B2 TFT substrate and method of fabricating the same 有权
标题翻译： TFT基板及其制造方法
公开(公告)号：US08017949B2
公开(公告)日：2011-09-13
申请号：US12468419
申请日：2009-05-19
申请人： Eun-Guk Lee , Jang-Soo Kim , Hyang-Shik Kong , Sang-Soo Kim , Shi-Yul Kim , Yoon-Ho Kang , Hoon Kang , Byung-Duk Yang , Kyoung-Tai Han , Dong-Yoon Kim
发明人： Eun-Guk Lee , Jang-Soo Kim , Hyang-Shik Kong , Sang-Soo Kim , Shi-Yul Kim , Yoon-Ho Kang , Hoon Kang , Byung-Duk Yang , Kyoung-Tai Han , Dong-Yoon Kim
IPC分类号： H01L29/06
CPC分类号： G02F1/136227 , G02F1/136209 , G02F2001/136222 , H01L27/124 , H01L27/1248
摘要： Provided are a thin-film transistor (TFT) substrate which can facilitate the formation of contact holes and has improved reliability and a method of fabricating the TFT substrate. The TFT substrate includes a gate wiring formed on an insulating substrate; a data wiring defining a pixel region by intersecting the gate wiring, the data wiring including a source electrode and a drain electrode; a plurality of black matrix barrier ribs formed along the boundaries of the pixel region; a color filter formed to cover the pixel region; a pixel electrode formed on the color filter; and a plurality of contact holes formed through the color filter near the corners of the pixel region through which the pixel electrode and the drain electrode contact each other.
摘要翻译：提供一种薄膜晶体管（TFT）基板，其可以促进形成接触孔并且具有改进的可靠性以及制造TFT基板的方法。 TFT基板包括形成在绝缘基板上的栅极布线; 数据线，其通过与所述栅极布线相交定义像素区域，所述数据布线包括源电极和漏电极; 沿所述像素区域的边界形成的多个黑矩阵障壁; 形成为覆盖像素区域的滤色器; 形成在滤色器上的像素电极; 以及在像素电极和漏极彼此通过的像素区域的角部附近通过滤色器形成的多个接触孔。

5. 发明授权

US07804093B2 Thin film transistor array panel and manufacturing method of the same 有权
标题翻译：薄膜晶体管阵列及其制造方法相同
公开(公告)号：US07804093B2
公开(公告)日：2010-09-28
申请号：US12335928
申请日：2008-12-16
申请人： Jang-Soo Kim , Sang-Soo Kim , Shi-Yul Kim , Jang-Sub Kim
发明人： Jang-Soo Kim , Sang-Soo Kim , Shi-Yul Kim , Jang-Sub Kim
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： G02F1/136227 , G02F1/133512 , G02F2001/136222 , H01L27/1248
摘要： A thin film transistor array panel includes an insulating substrate, a gate line and a data line disposed on the insulating substrate and insulated from and intersecting each other, a thin film transistor connected to the gate line and the data line, a partition disposed corresponding to the gate line and the data line and defining a color filter filling region, a color filter disposed in the filling region, a passivation layer disposed on the color filter and the partition, and a pixel electrode disposed on the passivation layer and connected to the thin film transistor through a contact hole disposed through the passivation layer and the color filter. A plane shape of the color filter filling region is substantially a rectangle.
摘要翻译：薄膜晶体管阵列面板包括绝缘基板，栅极线和设置在绝缘基板上并彼此绝缘和相交的数据线，连接到栅极线和数据线的薄膜晶体管，对应于栅极线和数据线，并且限定滤色器填充区域，布置在填充区域中的滤色器，设置在滤色器和隔板上的钝化层，以及设置在钝化层上并连接到薄膜上的像素电极薄膜晶体管通过设置穿过钝化层和滤色器的接触孔。滤色器填充区域的平面形状基本上是矩形。

6. 发明申请

US20100051951A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20100051951A1
公开(公告)日：2010-03-04
申请号：US12414932
申请日：2009-03-31
申请人： Kwang-Ho Lee , Jang-Soo Kim , Hong-Suk Yoo , Sang-Soo Kim , Shi-Yul Kim , Jae-Hyoung Youn
发明人： Kwang-Ho Lee , Jang-Soo Kim , Hong-Suk Yoo , Sang-Soo Kim , Shi-Yul Kim , Jae-Hyoung Youn
IPC分类号： H01L33/00 , H01L21/28
CPC分类号： H01L27/124 , G02F1/13394 , G02F1/136209 , G02F1/136227 , G02F2001/136222 , H01L27/1248 , H01L27/1262
摘要： A thin film transistor (“TFT”) array panel includes; an insulation substrate, a TFT disposed on the insulation substrate and including a drain electrode, a passivation layer covering the TFT and including a contact portion disposed therein corresponding to the drain electrode, a partition comprising an organic material disposed on the passivation layer, and including a transverse portion, a longitudinal portion, and a contact portion disposed on the drain electrode, a color filter disposed on the passivation layer and disposed in a region defined by the partition, an organic capping layer disposed on the partition and the color filter, and a pixel electrode disposed on the organic capping layer, and connected to the drain electrode through the contact portion of the passivation layer and the contact portion of the partition, wherein a contact hole is formed in the organic capping layer corresponding to the contact portion of the passivation layer.
摘要翻译：薄膜晶体管（“TFT”）阵列面板包括：绝缘基板，设置在所述绝缘基板上并包括漏电极的TFT，覆盖所述TFT的钝化层，并且包括设置在其中的所述漏电极对应的接触部分，所述隔板包括设置在所述钝化层上的有机材料，并且包括横向部分，纵向部分和设置在漏电极上的接触部分，设置在钝化层上并设置在由隔板限定的区域中的滤色器，设置在隔板上的有机覆盖层和滤色器，以及设置在所述有机覆盖层上的像素电极，并且通过所述钝化层的接触部分和所述隔离物的接触部分连接到所述漏电极，其中在所述有机覆盖层中形成接触孔，所述接触孔对应于所述钝化层的接触部分钝化层。

7. 发明授权

US09046727B2 Thin film transistor array panel and manufacturing method of the same 有权
标题翻译：薄膜晶体管阵列及其制造方法相同
公开(公告)号：US09046727B2
公开(公告)日：2015-06-02
申请号：US12414932
申请日：2009-03-31
申请人： Kwang-Ho Lee , Jang-Soo Kim , Hong-Suk Yoo , Sang-Soo Kim , Shi-Yul Kim , Jae-Hyoung Youn
发明人： Kwang-Ho Lee , Jang-Soo Kim , Hong-Suk Yoo , Sang-Soo Kim , Shi-Yul Kim , Jae-Hyoung Youn
IPC分类号： H01L33/00 , H01L21/28 , G02F1/1362 , G02F1/1339 , H01L27/12
CPC分类号： H01L27/124 , G02F1/13394 , G02F1/136209 , G02F1/136227 , G02F2001/136222 , H01L27/1248 , H01L27/1262
摘要： A thin film transistor (“TFT”) array panel includes; an insulation substrate, a TFT disposed on the insulation substrate and including a drain electrode, a passivation layer covering the TFT and including a contact portion disposed therein corresponding to the drain electrode, a partition comprising an organic material disposed on the passivation layer, and including a transverse portion, a longitudinal portion, and a contact portion disposed on the drain electrode, a color filter disposed on the passivation layer and disposed in a region defined by the partition, an organic capping layer disposed on the partition and the color filter, and a pixel electrode disposed on the organic capping layer, and connected to the drain electrode through the contact portion of the passivation layer and the contact portion of the partition, wherein a contact hole is formed in the organic capping layer corresponding to the contact portion of the passivation layer.
摘要翻译：薄膜晶体管（“TFT”）阵列面板包括：绝缘基板，设置在所述绝缘基板上并包括漏电极的TFT，覆盖所述TFT的钝化层，并且包括设置在其中的所述漏电极对应的接触部分，所述隔板包括设置在所述钝化层上的有机材料，并且包括横向部分，纵向部分和设置在漏电极上的接触部分，设置在钝化层上并设置在由隔板限定的区域中的滤色器，设置在隔板上的有机覆盖层和滤色器，以及设置在所述有机覆盖层上的像素电极，并且通过所述钝化层的接触部分和所述隔离物的接触部分连接到所述漏电极，其中在所述有机覆盖层中形成接触孔，所述接触孔对应于所述钝化层的接触部分钝化层。

8. 发明授权

US08218110B2 Thin film transistor array panel and method of manufacturing the same 失效
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US08218110B2
公开(公告)日：2012-07-10
申请号：US12434945
申请日：2009-05-04
申请人： Jean-Ho Song , Yang-Ho Jung , Hoon Kang , Jae-Sung Kim , Jae-Hyoung Youn , Jong-In Kim , Sang-Soo Kim , Shi-Yul Kim
发明人： Jean-Ho Song , Yang-Ho Jung , Hoon Kang , Jae-Sung Kim , Jae-Hyoung Youn , Jong-In Kim , Sang-Soo Kim , Shi-Yul Kim
IPC分类号： G02F1/1335
CPC分类号： G02F1/136209 , B41J2202/09 , G02F1/133555 , G02F1/133707 , G02F1/13624 , G02F1/136286 , G02F2001/134345 , G02F2001/136222 , G02F2001/136231 , H01L27/1248 , H01L27/1262 , H01L29/41733
摘要： After increasing the thickness of a gate line and forming a barrier rib that is made of an organic material, a gate insulating layer is formed and then a color filter is formed with an Inkjet method using the barrier rib. By increasing a thickness of the gate line, even if the size of a substrate increases, problems due to signal delay are reduced, and by forming a barrier rib with an organic material, the height of the barrier rib increases, and a taper angle increases and thus a color filter is stably formed.
摘要翻译：在增加栅极线的厚度并形成由有机材料制成的阻挡肋之后，形成栅极绝缘层，然后利用使用隔壁的喷墨法形成滤色器。通过增加栅极线的厚度，即使基板的尺寸增加，由于信号延迟引起的问题减少，并且通过用有机材料形成隔壁，障壁的高度增加，并且锥角增加从而稳定地形成滤色器。

9. 发明授权

US08354288B2 Etchant and method of manufacturing an array substrate using the same 有权
标题翻译：蚀刻剂和使用其制造阵列基板的方法
公开(公告)号：US08354288B2
公开(公告)日：2013-01-15
申请号：US13566239
申请日：2012-08-03
申请人： Bong-Kyun Kim , Jong-Hyun Choung , Byeong-Jin Lee , Sun-Young Hong , Hong-Sick Park , Shi-Yul Kim , Ki-Beom Lee , Sam-Young Cho , Sang-Woo Kim , Hyun-Cheol Shin , Won-Guk Seo
发明人： Bong-Kyun Kim , Jong-Hyun Choung , Byeong-Jin Lee , Sun-Young Hong , Hong-Sick Park , Shi-Yul Kim , Ki-Beom Lee , Sam-Young Cho , Sang-Woo Kim , Hyun-Cheol Shin , Won-Guk Seo
IPC分类号： H01L21/461
CPC分类号： C23F1/26 , C23F1/18 , H01L21/32134 , H01L27/124 , H01L29/458
摘要： An etchant includes about 0.1 percent by weight to about 30 percent by weight of ammonium persulfate (NH4)2S2O8, about 0.1 percent by weight to about 10 percent by weight of an inorganic acid, about 0.1 percent by weight to about 10 percent by weight of an acetate salt, about 0.01 percent by weight to about 5 percent by weight of a fluorine-containing compound, about 0.01 percent by weight to about 5 percent by weight of a sulfonic acid compound, about 0.01 percent by weight to about 2 percent by weight of an azole compound, and a remainder of water. Accordingly, the etchant may have high stability to maintain etching ability. Thus, manufacturing margins may be improved so that manufacturing costs may be reduced.
摘要翻译：蚀刻剂包括约0.1重量％至约30重量％的过硫酸铵（NH 4）2 S 2 O 8，约0.1重量％至约10重量％的无机酸，约0.1重量％至约10重量％约0.01重量％至约5重量％的含氟化合物的乙酸盐，约0.01重量％至约5重量％的磺酸化合物，约0.01重量％至约2重量％的唑类化合物，剩余的水。因此，蚀刻剂可能具有高稳定性以保持蚀刻能力。因此，可以提高制造裕度，从而可以降低制造成本。

10. 发明授权

US08305507B2 Thin film transistor array panel having improved storage capacitance and manufacturing method thereof 有权
标题翻译：具有改善的存储电容的薄膜晶体管阵列面板及其制造方法
公开(公告)号：US08305507B2
公开(公告)日：2012-11-06
申请号：US11356853
申请日：2006-02-17
申请人： Hye-Young Ryu , Jang-Soo Kim , Sang-Gab Kim , Hong-Kee Chin , Min-Seok Oh , Hee-Hwan Choe , Shi-Yul Kim
发明人： Hye-Young Ryu , Jang-Soo Kim , Sang-Gab Kim , Hong-Kee Chin , Min-Seok Oh , Hee-Hwan Choe , Shi-Yul Kim
IPC分类号： G02F1/1343
CPC分类号： G02F1/136286 , G02F1/133345 , G02F1/1362 , G02F2001/136222 , G02F2202/02
摘要： A thin film transistor array panel is provided, which includes a gate line, a data line intersecting the gate line, a storage electrode apart from the gate and data lines, a thin film transistor connected to the gate and data lines and having a drain electrode, a pixel electrode connected to the drain electrode, a first insulating layer over the thin film transistor and disposed under the pixel electrode, and a second insulating layer disposed on the first insulating layer and having an opening exposing the first insulating layer on the storage electrode.
摘要翻译：提供薄膜晶体管阵列面板，其包括栅极线，与栅极线相交的数据线，与栅极和数据线分开的存储电极，连接到栅极和数据线并具有漏极的薄膜晶体管连接到漏电极的像素电极，薄膜晶体管上的第一绝缘层，并且设置在像素电极下方;第二绝缘层，设置在第一绝缘层上，并且具有使存储电极上的第一绝缘层露出的开口。

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