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1. 发明申请

US20100051951A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20100051951A1
公开(公告)日：2010-03-04
申请号：US12414932
申请日：2009-03-31
申请人： Kwang-Ho Lee , Jang-Soo Kim , Hong-Suk Yoo , Sang-Soo Kim , Shi-Yul Kim , Jae-Hyoung Youn
发明人： Kwang-Ho Lee , Jang-Soo Kim , Hong-Suk Yoo , Sang-Soo Kim , Shi-Yul Kim , Jae-Hyoung Youn
IPC分类号： H01L33/00 , H01L21/28
CPC分类号： H01L27/124 , G02F1/13394 , G02F1/136209 , G02F1/136227 , G02F2001/136222 , H01L27/1248 , H01L27/1262
摘要： A thin film transistor (“TFT”) array panel includes; an insulation substrate, a TFT disposed on the insulation substrate and including a drain electrode, a passivation layer covering the TFT and including a contact portion disposed therein corresponding to the drain electrode, a partition comprising an organic material disposed on the passivation layer, and including a transverse portion, a longitudinal portion, and a contact portion disposed on the drain electrode, a color filter disposed on the passivation layer and disposed in a region defined by the partition, an organic capping layer disposed on the partition and the color filter, and a pixel electrode disposed on the organic capping layer, and connected to the drain electrode through the contact portion of the passivation layer and the contact portion of the partition, wherein a contact hole is formed in the organic capping layer corresponding to the contact portion of the passivation layer.
摘要翻译：薄膜晶体管（“TFT”）阵列面板包括：绝缘基板，设置在所述绝缘基板上并包括漏电极的TFT，覆盖所述TFT的钝化层，并且包括设置在其中的所述漏电极对应的接触部分，所述隔板包括设置在所述钝化层上的有机材料，并且包括横向部分，纵向部分和设置在漏电极上的接触部分，设置在钝化层上并设置在由隔板限定的区域中的滤色器，设置在隔板上的有机覆盖层和滤色器，以及设置在所述有机覆盖层上的像素电极，并且通过所述钝化层的接触部分和所述隔离物的接触部分连接到所述漏电极，其中在所述有机覆盖层中形成接触孔，所述接触孔对应于所述钝化层的接触部分钝化层。

2. 发明授权

US09046727B2 Thin film transistor array panel and manufacturing method of the same 有权
标题翻译：薄膜晶体管阵列及其制造方法相同
公开(公告)号：US09046727B2
公开(公告)日：2015-06-02
申请号：US12414932
申请日：2009-03-31
申请人： Kwang-Ho Lee , Jang-Soo Kim , Hong-Suk Yoo , Sang-Soo Kim , Shi-Yul Kim , Jae-Hyoung Youn
发明人： Kwang-Ho Lee , Jang-Soo Kim , Hong-Suk Yoo , Sang-Soo Kim , Shi-Yul Kim , Jae-Hyoung Youn
IPC分类号： H01L33/00 , H01L21/28 , G02F1/1362 , G02F1/1339 , H01L27/12
CPC分类号： H01L27/124 , G02F1/13394 , G02F1/136209 , G02F1/136227 , G02F2001/136222 , H01L27/1248 , H01L27/1262
摘要： A thin film transistor (“TFT”) array panel includes; an insulation substrate, a TFT disposed on the insulation substrate and including a drain electrode, a passivation layer covering the TFT and including a contact portion disposed therein corresponding to the drain electrode, a partition comprising an organic material disposed on the passivation layer, and including a transverse portion, a longitudinal portion, and a contact portion disposed on the drain electrode, a color filter disposed on the passivation layer and disposed in a region defined by the partition, an organic capping layer disposed on the partition and the color filter, and a pixel electrode disposed on the organic capping layer, and connected to the drain electrode through the contact portion of the passivation layer and the contact portion of the partition, wherein a contact hole is formed in the organic capping layer corresponding to the contact portion of the passivation layer.
摘要翻译：薄膜晶体管（“TFT”）阵列面板包括：绝缘基板，设置在所述绝缘基板上并包括漏电极的TFT，覆盖所述TFT的钝化层，并且包括设置在其中的所述漏电极对应的接触部分，所述隔板包括设置在所述钝化层上的有机材料，并且包括横向部分，纵向部分和设置在漏电极上的接触部分，设置在钝化层上并设置在由隔板限定的区域中的滤色器，设置在隔板上的有机覆盖层和滤色器，以及设置在所述有机覆盖层上的像素电极，并且通过所述钝化层的接触部分和所述隔离物的接触部分连接到所述漏电极，其中在所述有机覆盖层中形成接触孔，所述接触孔对应于所述钝化层的接触部分钝化层。

3. 发明授权

US08218110B2 Thin film transistor array panel and method of manufacturing the same 失效
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US08218110B2
公开(公告)日：2012-07-10
申请号：US12434945
申请日：2009-05-04
申请人： Jean-Ho Song , Yang-Ho Jung , Hoon Kang , Jae-Sung Kim , Jae-Hyoung Youn , Jong-In Kim , Sang-Soo Kim , Shi-Yul Kim
发明人： Jean-Ho Song , Yang-Ho Jung , Hoon Kang , Jae-Sung Kim , Jae-Hyoung Youn , Jong-In Kim , Sang-Soo Kim , Shi-Yul Kim
IPC分类号： G02F1/1335
CPC分类号： G02F1/136209 , B41J2202/09 , G02F1/133555 , G02F1/133707 , G02F1/13624 , G02F1/136286 , G02F2001/134345 , G02F2001/136222 , G02F2001/136231 , H01L27/1248 , H01L27/1262 , H01L29/41733
摘要： After increasing the thickness of a gate line and forming a barrier rib that is made of an organic material, a gate insulating layer is formed and then a color filter is formed with an Inkjet method using the barrier rib. By increasing a thickness of the gate line, even if the size of a substrate increases, problems due to signal delay are reduced, and by forming a barrier rib with an organic material, the height of the barrier rib increases, and a taper angle increases and thus a color filter is stably formed.
摘要翻译：在增加栅极线的厚度并形成由有机材料制成的阻挡肋之后，形成栅极绝缘层，然后利用使用隔壁的喷墨法形成滤色器。通过增加栅极线的厚度，即使基板的尺寸增加，由于信号延迟引起的问题减少，并且通过用有机材料形成隔壁，障壁的高度增加，并且锥角增加从而稳定地形成滤色器。

4. 发明授权

US08598581B2 Thin film transistor substrate and method for manufacturing the same 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US08598581B2
公开(公告)日：2013-12-03
申请号：US12434907
申请日：2009-05-04
申请人： Jang-Soo Kim , Jae-Hyoung Youn , Sang-Soo Kim , Dong-Gyu Kim
发明人： Jang-Soo Kim , Jae-Hyoung Youn , Sang-Soo Kim , Dong-Gyu Kim
IPC分类号： H01L33/00
CPC分类号： H01L29/78633 , H01L27/124 , H01L27/1248
摘要： A method for manufacturing a thin film transistor array panel includes; forming a gate line including a gate electrode and a height increasing member on a substrate, forming a gate insulating layer on the gate line and the height increasing member, forming a semiconductor, a data line including a source electrode, and a drain electrode facing the source electrode and overlapping at least a portion of the height increasing member on the gate insulating layer, forming a first insulating layer on the gate insulating layer, a data line and the drain electrode, forming a light-blocking member on a portion of the first insulating layer corresponding to the gate line and the data line, forming a color filter in an area bound by the light-blocking member, forming a second insulating layer on the light-blocking member and the color filter, and patterning the second insulating layer, the light-blocking member or the color filter, and the first insulating layer to form a contact hole exposing a portion of the drain electrode aligned with the height increasing member.
摘要翻译：薄膜晶体管阵列板的制造方法包括：在基板上形成包括栅电极和高度增加部件的栅极线，在栅极线和高度增加部件上形成栅绝缘层，形成半导体，包括源电极和漏电极的数据线，并且在所述栅极绝缘层上与所述高度增加部件的至少一部分重叠，在所述栅极绝缘层上形成第一绝缘层，在所述栅极绝缘层上形成第一绝缘层，在所述栅极绝缘层上形成阻挡部件，在所述第一对应于栅极线和数据线的绝缘层，在由阻光构件限定的区域中形成滤色器，在遮光构件和滤色器上形成第二绝缘层，并对第二绝缘层进行构图，遮光构件或滤色器，以及第一绝缘层，以形成暴露与高度增加构件对准的漏电极的一部分的接触孔。

5. 发明授权

US08017949B2 TFT substrate and method of fabricating the same 有权
标题翻译： TFT基板及其制造方法
公开(公告)号：US08017949B2
公开(公告)日：2011-09-13
申请号：US12468419
申请日：2009-05-19
申请人： Eun-Guk Lee , Jang-Soo Kim , Hyang-Shik Kong , Sang-Soo Kim , Shi-Yul Kim , Yoon-Ho Kang , Hoon Kang , Byung-Duk Yang , Kyoung-Tai Han , Dong-Yoon Kim
发明人： Eun-Guk Lee , Jang-Soo Kim , Hyang-Shik Kong , Sang-Soo Kim , Shi-Yul Kim , Yoon-Ho Kang , Hoon Kang , Byung-Duk Yang , Kyoung-Tai Han , Dong-Yoon Kim
IPC分类号： H01L29/06
CPC分类号： G02F1/136227 , G02F1/136209 , G02F2001/136222 , H01L27/124 , H01L27/1248
摘要： Provided are a thin-film transistor (TFT) substrate which can facilitate the formation of contact holes and has improved reliability and a method of fabricating the TFT substrate. The TFT substrate includes a gate wiring formed on an insulating substrate; a data wiring defining a pixel region by intersecting the gate wiring, the data wiring including a source electrode and a drain electrode; a plurality of black matrix barrier ribs formed along the boundaries of the pixel region; a color filter formed to cover the pixel region; a pixel electrode formed on the color filter; and a plurality of contact holes formed through the color filter near the corners of the pixel region through which the pixel electrode and the drain electrode contact each other.
摘要翻译：提供一种薄膜晶体管（TFT）基板，其可以促进形成接触孔并且具有改进的可靠性以及制造TFT基板的方法。 TFT基板包括形成在绝缘基板上的栅极布线; 数据线，其通过与所述栅极布线相交定义像素区域，所述数据布线包括源电极和漏电极; 沿所述像素区域的边界形成的多个黑矩阵障壁; 形成为覆盖像素区域的滤色器; 形成在滤色器上的像素电极; 以及在像素电极和漏极彼此通过的像素区域的角部附近通过滤色器形成的多个接触孔。

6. 发明授权

US07804093B2 Thin film transistor array panel and manufacturing method of the same 有权
标题翻译：薄膜晶体管阵列及其制造方法相同
公开(公告)号：US07804093B2
公开(公告)日：2010-09-28
申请号：US12335928
申请日：2008-12-16
申请人： Jang-Soo Kim , Sang-Soo Kim , Shi-Yul Kim , Jang-Sub Kim
发明人： Jang-Soo Kim , Sang-Soo Kim , Shi-Yul Kim , Jang-Sub Kim
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： G02F1/136227 , G02F1/133512 , G02F2001/136222 , H01L27/1248
摘要： A thin film transistor array panel includes an insulating substrate, a gate line and a data line disposed on the insulating substrate and insulated from and intersecting each other, a thin film transistor connected to the gate line and the data line, a partition disposed corresponding to the gate line and the data line and defining a color filter filling region, a color filter disposed in the filling region, a passivation layer disposed on the color filter and the partition, and a pixel electrode disposed on the passivation layer and connected to the thin film transistor through a contact hole disposed through the passivation layer and the color filter. A plane shape of the color filter filling region is substantially a rectangle.
摘要翻译：薄膜晶体管阵列面板包括绝缘基板，栅极线和设置在绝缘基板上并彼此绝缘和相交的数据线，连接到栅极线和数据线的薄膜晶体管，对应于栅极线和数据线，并且限定滤色器填充区域，布置在填充区域中的滤色器，设置在滤色器和隔板上的钝化层，以及设置在钝化层上并连接到薄膜上的像素电极薄膜晶体管通过设置穿过钝化层和滤色器的接触孔。滤色器填充区域的平面形状基本上是矩形。

7. 发明授权

US07538850B2 Panel for display device, manufacturing method thereof and liquid crystal display 有权
标题翻译：显示装置用面板及其制造方法以及液晶显示装置
公开(公告)号：US07538850B2
公开(公告)日：2009-05-26
申请号：US10752968
申请日：2004-01-07
申请人： Dong-Gyu Kim , Shi-Yul Kim , Sang-Soo Kim
发明人： Dong-Gyu Kim , Shi-Yul Kim , Sang-Soo Kim
IPC分类号： G02F1/1339
CPC分类号： G02F1/13394 , G02F1/133512 , G02F2001/136222
摘要： A method for forming a display device includes forming a first panel and a second panel. The step of forming a first panel includes forming a black matrix over portions of a first substrate, forming a common electrode over the black matrix, and forming a spacer over the common electrode and the black matrix. The step of forming the second panel includes forming a pixel electrode over a second substrate. The first panel and the second panel are disposed over one another such that the pixel electrode faces the common electrode and the black matrix with a liquid crystal layer therebetween. A vertical distance between the first panel and the second panel is determined by thicknesses of the spacer and the black matrix.
摘要翻译：一种形成显示装置的方法包括形成第一面板和第二面板。形成第一面板的步骤包括在第一衬底的部分上形成黑色矩阵，在黑色矩阵上形成公共电极，以及在公共电极和黑色矩阵上形成间隔物。形成第二面板的步骤包括在第二衬底上形成像素电极。第一面板和第二面板彼此配置，使得像素电极面对公共电极和黑色矩阵，其间具有液晶层。第一面板和第二面板之间的垂直距离由间隔物和黑色矩阵的厚度决定。

8. 发明申请

US20090225248A1 Panel for Display Device, Manufacturing Method Thereof and Liquid Crystal Display 审中-公开
标题翻译：显示设备面板及其制造方法和液晶显示器
公开(公告)号：US20090225248A1
公开(公告)日：2009-09-10
申请号：US12436495
申请日：2009-05-06
申请人： Dong Gyu Kim , Shi-Yul Kim , Sang-Soo Kim
发明人： Dong Gyu Kim , Shi-Yul Kim , Sang-Soo Kim
IPC分类号： G02F1/1368
CPC分类号： G02F1/13394 , G02F1/133512 , G02F2001/136222
摘要： A method for forming a display device includes forming a first panel and a second panel. The step of forming a first panel includes forming a black matrix over portions of a first substrate, forming a common electrode over the black matrix, and forming a spacer over the common electrode and the black matrix. The step of forming the second panel includes forming a pixel electrode over a second substrate. The first panel and the second panel are disposed over one another such that the pixel electrode faces the common electrode and the black matrix with a liquid crystal layer therebetween. A vertical distance between the first panel and the second panel is determined by thicknesses of the spacer and the black matrix.
摘要翻译：一种形成显示装置的方法包括形成第一面板和第二面板。形成第一面板的步骤包括在第一衬底的部分上形成黑色矩阵，在黑色矩阵上形成公共电极，以及在公共电极和黑色矩阵上形成间隔物。形成第二面板的步骤包括在第二衬底上形成像素电极。第一面板和第二面板彼此配置，使得像素电极面对公共电极和黑色矩阵，其间具有液晶层。第一面板和第二面板之间的垂直距离由间隔物和黑色矩阵的厚度决定。

9. 发明授权

US09450140B2 Thin film deposition apparatus and method of manufacturing organic light-emitting display apparatus using the same 有权
标题翻译：薄膜沉积装置及使用其的有机发光显示装置的制造方法
公开(公告)号：US09450140B2
公开(公告)日：2016-09-20
申请号：US12869830
申请日：2010-08-27
申请人： Chang-Mog Jo , Jong-Heon Kim , Yong-Sup Choi , Sang-Soo Kim , Hee-Cheol Kang , Young-Mook Choi
发明人： Chang-Mog Jo , Jong-Heon Kim , Yong-Sup Choi , Sang-Soo Kim , Hee-Cheol Kang , Young-Mook Choi
IPC分类号： B05D5/06 , C23C16/00 , B05D1/32 , H01L21/00 , H01L33/00 , C23C14/04 , C23C14/12 , C23C14/24 , C23C14/56 , H01L21/67 , H01L21/683 , H01L51/00 , H01L51/56 , H01L27/32
CPC分类号： H01L33/005 , C23C14/042 , C23C14/12 , C23C14/243 , C23C14/246 , C23C14/568 , H01L21/67173 , H01L21/67225 , H01L21/67236 , H01L21/6831 , H01L27/3211 , H01L51/001 , H01L51/0011 , H01L51/56
摘要： A thin film deposition apparatus used to manufacture large substrates on a mass scale and that allows high-definition patterning, and a method of manufacturing an organic light-emitting display apparatus using the same, the apparatus includes a loading unit fixing a substrate onto an electrostatic chuck; a deposition unit including a chamber maintained in a vacuum state and a thin film deposition assembly disposed in the chamber, separated from the substrate by a predetermined distance, to deposit a thin film on the substrate fixed on the electrostatic chuck; an unloading unit separating the substrate on which a deposition process is completed, from the electrostatic chuck; a first circulation unit sequentially moving the electrostatic chuck on which the substrate is fixed, to the loading unit, the deposition unit, and the unloading unit; and a second circulation unit returning the electrostatic chuck separated from the substrate to the loading unit from the unloading unit, wherein the first circulation unit passes through the chamber when passing through the deposition unit.
摘要翻译：一种薄膜沉积装置，用于大规模制造大型基板并允许高分辨率图案化，以及制造使用其的有机发光显示装置的方法，该装置包括将基板固定在静电上的装载单元卡盘沉积单元，其包括保持在真空状态的室和设置在所述室中的薄膜沉积组件，其与所述基板隔开预定距离，以在固定在所述静电卡盘上的所述基板上沉积薄膜; 从所述静电卡盘将分离完成了沉积处理的基板的卸载单元; 顺序地将固定有基板的静电卡盘移动到加载单元，沉积单元和卸载单元的第一循环单元; 以及第二循环单元，其将从所述基板分离的所述静电卡盘从所述卸载单元返回到所述装载单元，其中所述第一循环单元在通过所述沉积单元时通过所述室。

10. 发明授权

US09058787B2 Display device and driving method thereof 有权
标题翻译：显示装置及其驱动方法
公开(公告)号：US09058787B2
公开(公告)日：2015-06-16
申请号：US13080997
申请日：2011-04-06
申请人： Sang-Soo Kim , Dong-Gyu Kim , Seung-Hwan Moon , Seung-Woo Lee , Seung-Soo Baek
发明人： Sang-Soo Kim , Dong-Gyu Kim , Seung-Hwan Moon , Seung-Woo Lee , Seung-Soo Baek
IPC分类号： G09G3/36 , G09G3/20 , G09G3/34 , G02F1/1343
CPC分类号： G09G3/3648 , G02F2001/134345 , G09G3/2074 , G09G3/3406 , G09G3/3614 , G09G3/3696 , G09G2300/0426 , G09G2300/0443 , G09G2300/0447 , G09G2300/0823 , G09G2310/0251 , G09G2310/0281 , G09G2320/0209 , G09G2320/0247 , G09G2320/028 , G09G2320/064
摘要： A display device according to an embodiment of the present invention includes: a pixel including a first subpixel and a second subpixel; a first signal line connected to the first subpixel and transmitting a first signal; a second signal line connected to the second subpixel and transmitting a second signal; a third signal line intersecting the first and the second signal lines, connected to at least one of the first and the second subpixels, and transmitting a third signal; and a fourth signal line intersecting the first and the second signal lines and transmitting a fourth signal, wherein the first subpixel and the second subpixel are supplied with data voltages having different magnitude, and the data voltages applied to the first and the second subpixels are originated from a single image information.
摘要翻译：根据本发明实施例的显示装置包括：包括第一子像素和第二子像素的像素; 连接到第一子像素并发送第一信号的第一信号线; 连接到第二子像素并发送第二信号的第二信号线; 与第一和第二信号线相交的第三信号线，连接到第一和第二子像素中的至少一个，并发送第三信号; 以及与第一和第二信号线相交的第四信号线，并发送第四信号，其中第一子像素和第二子像素被提供具有不同幅度的数据电压，并且发出施加到第一和第二子像素的数据电压从单一的图像信息。

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