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    • 2. 发明授权
    • Panel for display device, manufacturing method thereof and liquid crystal display
    • 显示装置用面板及其制造方法以及液晶显示装置
    • US07538850B2
    • 2009-05-26
    • US10752968
    • 2004-01-07
    • Dong-Gyu KimShi-Yul KimSang-Soo Kim
    • Dong-Gyu KimShi-Yul KimSang-Soo Kim
    • G02F1/1339
    • G02F1/13394G02F1/133512G02F2001/136222
    • A method for forming a display device includes forming a first panel and a second panel. The step of forming a first panel includes forming a black matrix over portions of a first substrate, forming a common electrode over the black matrix, and forming a spacer over the common electrode and the black matrix. The step of forming the second panel includes forming a pixel electrode over a second substrate. The first panel and the second panel are disposed over one another such that the pixel electrode faces the common electrode and the black matrix with a liquid crystal layer therebetween. A vertical distance between the first panel and the second panel is determined by thicknesses of the spacer and the black matrix.
    • 一种形成显示装置的方法包括形成第一面板和第二面板。 形成第一面板的步骤包括在第一衬底的部分上形成黑色矩阵,在黑色矩阵上形成公共电极,以及在公共电极和黑色矩阵上形成间隔物。 形成第二面板的步骤包括在第二衬底上形成像素电极。 第一面板和第二面板彼此配置,使得像素电极面对公共电极和黑色矩阵,其间具有液晶层。 第一面板和第二面板之间的垂直距离由间隔物和黑色矩阵的厚度决定。
    • 6. 发明授权
    • Amorphous silicon thin film transistor-liquid crystal display device and method of manufacturing the same
    • 非晶硅薄膜晶体管 - 液晶显示装置及其制造方法
    • US08619207B2
    • 2013-12-31
    • US12108337
    • 2008-04-23
    • Dong-Gyu Kim
    • Dong-Gyu Kim
    • G02F1/136G02F1/1345
    • G02F1/13454G02F1/13439G02F1/13458G02F1/136227G02F1/1368G02F2001/136295G02F2201/123G02F2201/50G02F2202/103G09G3/3677G09G2300/0408G11C19/28H01L27/1222H01L27/124H01L27/1248H01L29/66765H01L29/78669
    • In an amorphous silicon thin film transistor-liquid crystal display device and a method of manufacturing the same, gate patterns including a gate line and a gate electrode are formed on an insulation substrate having a display region and a driving circuit region on which a plurality of shift resistors are formed. A gate insulating film, active layer patterns and data patterns including source/drain electrodes are formed successively on the substrate. A passivation layer on the substrate has a first contact hole exposing a drain electrode of the display region and second and third contact holes respectively exposing a gate electrode and source/drain electrode of a first transistor of each of the shift resistors. Electrode patterns on the passivation layer include a first electrode connected to the drain electrode of the display region through the first contact hole and a second electrode connecting the gate electrode to the source/drain electrode of the first transistor through the second and third contact holes. The gate driving circuit including the shift resistors and the wirings are integrated on the insulating substrate without an additional process, thereby simplifying the manufacturing process.
    • 在非晶硅薄膜晶体管 - 液晶显示装置及其制造方法中,包括栅极线和栅电极的栅极图案形成在具有显示区域和驱动电路区域的绝缘基板上,多个 形成移位电阻。 在基板上依次形成栅极绝缘膜,有源层图案和包括源极/漏极的数据图案。 衬底上的钝化层具有暴露显示区域的漏电极的第一接触孔和分别暴露每个移位电阻器的第一晶体管的栅电极和源/漏电极的第二和第三接触孔。 钝化层上的电极图案包括通过第一接触孔连接到显示区域的漏电极的第一电极和通过第二和第三接触孔将栅电极连接到第一晶体管的源极/漏电极的第二电极。 包括移动电阻器和布线的栅极驱动电路集成在绝缘基板上,而不需要额外的工艺,从而简化了制造工艺。