专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120256097A1 INDIRECTLY HEATED CATHODE CARTRIDGE DESIGN 有权
标题翻译：独立加热阴极盒设计
公开(公告)号：US20120256097A1
公开(公告)日：2012-10-11
申请号：US13082495
申请日：2011-04-08
申请人： Craig R. Chaney , Leo V. Klos , Anthony Renau , Alexander Perel
发明人： Craig R. Chaney , Leo V. Klos , Anthony Renau , Alexander Perel
IPC分类号： H01J1/50 , H01J9/02
CPC分类号： H01J37/067 , H01J19/14 , H01J19/20 , H01J29/485 , H01J37/026 , H01J37/075 , H01J37/3171 , H01J2237/06308 , H01J2237/06375
摘要： An apparatus and method for producing electrons in a plasma flood gun is disclosed. The apparatus includes an indirectly heated cathode (IHC) which is contained within a pre-fabricated cartridge. This cartridge can be readily replaced in a plasma flood gun. In addition, the use of an IHC reduces the amount of contaminants that are injected into the workpiece or wafer.
摘要翻译：公开了一种用于在等离子体喷枪中产生电子的装置和方法。该装置包括一个间接加热的阴极（IHC），其被包含在一个预制的盒中。这种墨盒可以在等离子喷枪中轻松更换。此外，IHC的使用减少了注入工件或晶片的污染物的量。

2. 发明授权

US08455839B2 Cleaning of an extraction aperture of an ion source 有权
标题翻译：清洁离子源的提取孔
公开(公告)号：US08455839B2
公开(公告)日：2013-06-04
申请号：US12720960
申请日：2010-03-10
申请人： Craig R. Chaney , Alexander S. Perel , Neil J. Bassom , Leo V. Klos
发明人： Craig R. Chaney , Alexander S. Perel , Neil J. Bassom , Leo V. Klos
IPC分类号： H01J37/28 , B08B7/00
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/024
摘要： An ion source includes an arc chamber housing defining an arc chamber having an extraction aperture, and a wiper. The wiper is positioned within the arc chamber in a parked position and configured to be driven from the parked position to operational positions to clean the extraction aperture. A cleaning sub-assembly for an ion source includes a wiper configured to be positioned within an arc chamber of the ion source when in a parked position and driven from the parked position to operational positions to clean an extraction aperture of the ion source.
摘要翻译：离子源包括限定具有提取孔的电弧室的电弧室壳体和擦拭器。擦拭器位于电弧室内处于停放位置，并且构造成从停放位置驱动到操作位置以清洁提取孔。用于离子源的清洁子组件包括擦拭器，其构造成当处于停放位置时定位在离子源的电弧室内并且从停放位置驱动到操作位置以清洁离子源的提取孔。

3. 发明授权

US07491947B2 Technique for improving performance and extending lifetime of indirectly heated cathode ion source 有权
标题翻译：提高间接加热阴极离子源的性能和延长使用寿命的技术
公开(公告)号：US07491947B2
公开(公告)日：2009-02-17
申请号：US11505168
申请日：2006-08-16
申请人： Eric R. Cobb , Russell J. Low , Craig R. Chaney , Leo V. Klos
发明人： Eric R. Cobb , Russell J. Low , Craig R. Chaney , Leo V. Klos
IPC分类号： H01J27/08
CPC分类号： H01J37/08 , H01J37/302 , H01J37/3171 , H01J2237/022
摘要： A technique improving performance and lifetime of indirectly heated cathode ion sources is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for improving performance and lifetime of an indirectly heated cathode (IHC) ion source in an ion implanter. The method may comprise maintaining an arc chamber of the IHC ion source under vacuum during a maintenance of the ion implanter, wherein no gas is supplied to the arc chamber. The method may also comprise heating a cathode of the IHC ion source by supplying a filament with a current. The method may further comprise biasing the cathode with respect to the filament at a current level of 0.5-5 A without biasing the arc chamber with respect to the cathode. The method additionally comprise keeping a source magnet from producing a magnetic field inside the arc chamber.
摘要翻译：公开了一种提高间接加热的阴极离子源的性能和寿命的技术。在一个特定的示例性实施例中，该技术可以被实现为用于改进离子注入机中间接加热的阴极（IHC）离子源的性能和寿命的方法。该方法可以包括在维护离子注入机期间将IHC离子源的电弧室保持在真空下，其中没有气体被供应到电弧室。该方法还可以包括通过向灯丝提供电流来加热IHC离子源的阴极。该方法还可以包括以0.5-5A的电流水平相对于灯丝偏置阴极而不使电弧室相对于阴极偏置。该方法还包括保持源磁体在电弧室内产生磁场。

4. 发明授权

US08071956B2 Cleaning of an extraction aperture of an ion source 有权
标题翻译：清洁离子源的提取孔
公开(公告)号：US08071956B2
公开(公告)日：2011-12-06
申请号：US12720933
申请日：2010-03-10
申请人： Craig R. Chaney , Alexander S. Perel , Leo V. Klos
发明人： Craig R. Chaney , Alexander S. Perel , Leo V. Klos
IPC分类号： H01J37/28
CPC分类号： H01J27/08 , B08B1/008 , H01J27/024 , H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/024
摘要： An ion source includes an arc chamber housing defining an arc chamber having an extraction aperture, and a wiper assembly comprising a wiper positioned outside the arc chamber in a parked position and configured to be driven from the parked position to operational positions to clean the extraction aperture. A wiper assembly for an ion source includes a wiper configured to be positioned outside an arc chamber of the ion source when in a parked position and driven from the parked position to operational positions to clean an extraction aperture of the ion source.
摘要翻译：离子源包括限定具有提取孔的电弧室的电弧室壳体，以及擦拭器组件，其包括在处于停放位置的位于电弧室外部的擦拭器，并且构造成从停放位置驱动到操作位置以清洁提取孔。用于离子源的擦拭器组件包括擦拭器，其构造成当处于停放位置时定位在离子源的电弧室外部并且从停放位置驱动到操作位置以清洁离子源的提取孔。

5. 发明授权

US09396902B2 Gallium ION source and materials therefore 有权
标题翻译：因此，镓离子源和材料
公开(公告)号：US09396902B2
公开(公告)日：2016-07-19
申请号：US13477253
申请日：2012-05-22
申请人： Costel Biloiu , Craig R. Chaney , Neil J. Bassom , Benjamin Colombeau , Dennis P. Rodier
发明人： Costel Biloiu , Craig R. Chaney , Neil J. Bassom , Benjamin Colombeau , Dennis P. Rodier
IPC分类号： H01J7/24 , H01J27/20 , H01J37/02 , H01J37/08
CPC分类号： H01J27/20 , H01J7/24 , H01J37/02 , H01J37/08
摘要： In one embodiment, a method for generating an ion beam having gallium ions includes providing at least a portion of a gallium compound target in a plasma chamber, the gallium compound target comprising gallium and at least one additional element. The method also includes initiating a plasma in the plasma chamber using at least one gaseous species and providing a source of gaseous etchant species to react with the gallium compound target to form a volatile gallium species.
摘要翻译：在一个实施方案中，用于产生具有镓离子的离子束的方法包括在等离子体室中提供镓化合物靶的至少一部分，所述镓化合物靶包含镓和至少一个附加元素。该方法还包括使用至少一种气态物质在等离子体室中引发等离子体，并提供气态蚀刻剂物质源以与镓化合物靶反应以形成挥发性镓物质。

6. 发明申请

US20140070697A1 Internal RF Antenna With Dielectric Insulation 有权
标题翻译：内置RF天线，介质绝缘
公开(公告)号：US20140070697A1
公开(公告)日：2014-03-13
申请号：US13612406
申请日：2012-09-12
申请人： Wilhelm P. Platow , Craig R. Chaney
发明人： Wilhelm P. Platow , Craig R. Chaney
IPC分类号： H01Q1/26 , H01P11/00 , H01Q7/00 , H01Q1/00
CPC分类号： H01J37/3211 , H01J37/32477 , H05H1/46 , H05H2001/4667
摘要： Disclosed is a radio frequency (RF) antenna for plasma ion sources. The RF antenna includes a low-resistance metal tube having an inner and outer diameter. A low friction polymer tube also having an inner and outer diameter surrounds the low-resistance metal tube. The inner diameter of the polymer tube is slightly larger than the outer diameter of the low-resistance metal tube. A pre-formed quartz glass tube encases the low friction polymer tube and low-resistance metal tube. The quartz glass tube is pre-formed in a desired shape. A guide wire is attached inside one end of the low-resistance hollow metal tube. The flexible low friction polymer tube containing the low-resistance metal tubed may then be threaded through the quartz glass tube.
摘要翻译：公开了用于等离子体离子源的射频（RF）天线。 RF天线包括具有内径和外径的低电阻金属管。也具有内外径的低摩擦聚合物管围绕低电阻金属管。聚合物管的内径稍微大于低电阻金属管的外径。预制石英玻璃管包裹低摩擦聚合物管和低电阻金属管。石英玻璃管预成形为所需形状。引导线安装在低阻力中空金属管的一端内。含有低电阻金属管的柔性低摩擦聚合物管可以穿过石英玻璃管。

7. 发明授权

US08501624B2 Excited gas injection for ion implant control 有权
标题翻译：激发气体注入用于离子注入控制
公开(公告)号：US08501624B2
公开(公告)日：2013-08-06
申请号：US12328096
申请日：2008-12-04
申请人： Bon-Woong Koo , Victor Benveniste , Christopher A. Rowland , Craig R. Chaney , Frank Sinclair , Neil J. Bassom
发明人： Bon-Woong Koo , Victor Benveniste , Christopher A. Rowland , Craig R. Chaney , Frank Sinclair , Neil J. Bassom
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01J27/022 , H01J37/08 , H01J37/3171 , H01J37/32357 , H01J37/32412 , H01J37/32422 , H01J2237/006 , H01J2237/061 , H01J2237/0815 , H01J2237/24514
摘要： An ion source that utilizes exited and/or atomic gas injection is disclosed. In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber.
摘要翻译：公开了一种利用离子源和/或原子气体注入的离子源。在离子束施加中，源气体可以直接使用，如通常提供的。或者或另外，源气体可以在被引入离子源室之前通过将其通过远程等离子体源来改变。这可以用于产生兴奋的中性粒子，重离子，亚稳分子或多电荷离子。在另一个实施例中，使用多个气体，其中一个或多个气体通过远程等离子体发生器。在某些实施方案中，气体在被提供给离子源室之前组合在单个等离子体发生器中。在等离子体浸渍应用中，通过一个或多个另外的气体注入位置将等离子体注入到处理室中。这些注入位置允许通过处理室外部的远程等离子体源产生的附加等离子体的流入。

8. 发明授权

US08466431B2 Techniques for improving extracted ion beam quality using high-transparency electrodes 有权
标题翻译：使用高透明电极提高离子束质量的技术
公开(公告)号：US08466431B2
公开(公告)日：2013-06-18
申请号：US12370555
申请日：2009-02-12
申请人： James S. Buff , Svetlana Radovanov , Bon-Woong Koo , Wilhelm Platow , Frank Sinclair , D. Jeffrey Lischer , Craig R. Chaney , Steven Borichevsky , Eric R. Cobb , Mayur Jagtap , Kenneth H. Purser , Victor Benveniste , Shardul S. Patel
发明人： James S. Buff , Svetlana Radovanov , Bon-Woong Koo , Wilhelm Platow , Frank Sinclair , D. Jeffrey Lischer , Craig R. Chaney , Steven Borichevsky , Eric R. Cobb , Mayur Jagtap , Kenneth H. Purser , Victor Benveniste , Shardul S. Patel
IPC分类号： H01J37/15 , G21K5/10
CPC分类号： H01J37/3171 , H01J27/024 , H01J37/08 , H01J37/09 , H01J37/304 , H01J2237/0453 , H01J2237/0458 , H01J2237/083 , H01J2237/24542
摘要： Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.
摘要翻译：公开了使用高透明电极提高离子束质量的技术。在一个特定的示例性实施例中，技术可以被实现为用于离子注入的装置。该装置可以包括用于产生离子束的离子源，其中离子源包括具有离子束穿过其中的孔的面板。该装置还可以包括至少包括抑制电极和高透明度接地电极的一组提取电极，其中所述提取电极组可以经由面板从离子源提取离子束，并且其中高透明度接地电极可以被配置为优化抑制电极和高透明度接地电极之间的气体传导，以改善提取的离子束质量。

9. 发明授权

US08263944B2 Directional gas injection for an ion source cathode assembly 有权
标题翻译：离子源阴极组件的定向气体注入
公开(公告)号：US08263944B2
公开(公告)日：2012-09-11
申请号：US12340812
申请日：2008-12-22
申请人： John Bon-Woong Koo , David J. Twiss , Chris Campbell , Frank Sinclair , Alexander S. Perel , Craig R. Chaney , Wilhelm P. Platow , Eric R. Cobb
发明人： John Bon-Woong Koo , David J. Twiss , Chris Campbell , Frank Sinclair , Alexander S. Perel , Craig R. Chaney , Wilhelm P. Platow , Eric R. Cobb
IPC分类号： H01J27/00
CPC分类号： H01J27/08 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/022 , H01J2237/061
摘要： In an ion implanter, an inert gas is directed at a cathode assembly near an ion source chamber via a supply tube. The inert gas is provided with a localized directional flow toward the cathode assembly to reduce unwanted concentrations of cleaning or dopant gases introduced into the ion source chamber, thereby reducing the effects of unwanted filament growth in the cathode assembly and extending the manufacturing life of the ion source.
摘要翻译：在离子注入机中，惰性气体通过供应管被引导到离子源室附近的阴极组件。向惰性气体提供朝向阴极组件的局部定向流，以减少引入离子源室的清洁或掺杂气体的不期望浓度，从而减少阴极组件中不想要的细丝生长的影响并延长离子的制造寿命资源。

10. 发明申请

US20110143527A1 TECHNIQUES FOR GENERATING UNIFORM ION BEAM 审中-公开
标题翻译：用于产生均匀离子束的技术
公开(公告)号：US20110143527A1
公开(公告)日：2011-06-16
申请号：US12964357
申请日：2010-12-09
申请人： Wilhelm P. PLATOW , Neil J. Bassom , Peter F. Kurunczi , Alexander S. Perel , Craig R. Chaney
发明人： Wilhelm P. PLATOW , Neil J. Bassom , Peter F. Kurunczi , Alexander S. Perel , Craig R. Chaney
IPC分类号： H01L21/265 , H01J37/317 , H01J37/02
CPC分类号： H01J37/08 , H01J37/3171
摘要： Herein an improved technique for generating uniform ion beam is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate with an ion implanter comprising an ion source. The method may comprise: introducing dopant into an ion source chamber of the ion source, the dopant may comprise molecules containing boron and hydrogen; introducing diluent into the ion source chamber, the diluent containing halogen; ionizing the dopant and the diluent into molecular ions and halogen containing ions, the molecular ions containing boron and hydrogen; extracting the molecular ions and the halogen containing ions from the ions source chamber; and directing the molecular ions toward the substrate, where the halogen containing ions may improve uniformity of the molecular ions extracted from the ion source and extend the lifetime of the ion source.
摘要翻译：本发明公开了一种用于产生均匀离子束的改进技术。在一个特定的示例性实施例中，该技术可以被实现为用于使用包括离子源的离子注入机来处理衬底的方法。该方法可以包括：将掺杂剂引入到离子源的离子源室中，掺杂剂可以包含含有硼和氢的分子; 将稀释剂引入离子源室，稀释剂含有卤素; 将掺杂剂和稀释剂电离成分子离子和含卤素的离子，含有硼和氢的分子离子; 从离子源室中提取分子离子和含卤素离子; 并且将分子离子引导到衬底，其中含卤素的离子可以改善从离子源提取的分子离子的均匀性并延长离子源的寿命。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式