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1. 发明授权

US08912976B2 Internal RF antenna with dielectric insulation 有权
标题翻译：内置射频天线，具有绝缘绝缘
公开(公告)号：US08912976B2
公开(公告)日：2014-12-16
申请号：US13612406
申请日：2012-09-12
申请人： Wilhelm P. Platow , Craig R. Chaney
发明人： Wilhelm P. Platow , Craig R. Chaney
IPC分类号： H01Q1/36
CPC分类号： H01J37/3211 , H01J37/32477 , H05H1/46 , H05H2001/4667
摘要： Disclosed is a radio frequency (RF) antenna for plasma ion sources. The RF antenna includes a low-resistance metal tube having an inner and outer diameter. A low friction polymer tube also having an inner and outer diameter surrounds the low-resistance metal tube. The inner diameter of the polymer tube is slightly larger than the outer diameter of the low-resistance metal tube. A pre-formed quartz glass tube encases the low friction polymer tube and low-resistance metal tube. The quartz glass tube is pre-formed in a desired shape. A guide wire is attached inside one end of the low-resistance hollow metal tube. The flexible low friction polymer tube containing the low-resistance metal tubed may then be threaded through the quartz glass tube.
摘要翻译：公开了一种用于等离子体离子源的射频（RF）天线。 RF天线包括具有内径和外径的低电阻金属管。也具有内外径的低摩擦聚合物管围绕低电阻金属管。聚合物管的内径稍微大于低电阻金属管的外径。预制石英玻璃管包裹低摩擦聚合物管和低电阻金属管。石英玻璃管预成形为所需形状。引导线安装在低阻力中空金属管的一端内。含有低电阻金属管的柔性低摩擦聚合物管可以穿过石英玻璃管。

2. 发明授权

US08809800B2 Ion source and a method for in-situ cleaning thereof 有权
公开(公告)号：US08809800B2
公开(公告)日：2014-08-19
申请号：US12533318
申请日：2009-07-31
申请人： Bon-Woong Koo , Christopher R. Campbell , Craig R. Chaney , Robert Lindberg , Wilhelm P. Platow , Alexander S. Perel
发明人： Bon-Woong Koo , Christopher R. Campbell , Craig R. Chaney , Robert Lindberg , Wilhelm P. Platow , Alexander S. Perel
IPC分类号： H01J27/02 , H01J27/14 , H01J37/08 , H01J37/317
CPC分类号： H01J27/022 , H01J27/02 , H01J27/14 , H01J37/08 , H01J37/3002 , H01J37/3171 , H01J2237/022 , H01J2237/31705
摘要： An ion source and method of cleaning are disclosed. One or more heating units are placed in close proximity to the inner volume of the ion source, so as to affect the temperature within the ion source. In one embodiment, one or more walls of the ion source have recesses into which heating units are inserted. In another embodiment, one or more walls of the ion source are constructed of a conducting circuit and an insulating layer. By utilizing heating units near the ion source, it is possible to develop new methods of cleaning the ion source. Cleaning gas is flowed into the ion source, where it is ionized, either by the cathode, as in normal operating mode, or by the heat generated by the heating units. The cleaning gas is able to remove residue from the walls of the ion source more effectively due to the elevated temperature.

3. 发明申请

US20130313971A1 Gallium ION Source and Materials Therefore 有权
标题翻译：因此，镓离子源和材料
公开(公告)号：US20130313971A1
公开(公告)日：2013-11-28
申请号：US13477253
申请日：2012-05-22
申请人： Costel Biloiu , Craig R. Chaney , Neil J. Bassom , Benjamin Colombeau , Dennis P. Rodier
发明人： Costel Biloiu , Craig R. Chaney , Neil J. Bassom , Benjamin Colombeau , Dennis P. Rodier
IPC分类号： H01J27/20
CPC分类号： H01J27/20 , H01J7/24 , H01J37/02 , H01J37/08
摘要： In one embodiment, a method for generating an ion beam having gallium ions includes providing at least a portion of a gallium compound target in a plasma chamber, the gallium compound target comprising gallium and at least one additional element. The method also includes initiating a plasma in the plasma chamber using at least one gaseous species and providing a source of gaseous etchant species to react with the gallium compound target to form a volatile gallium species.
摘要翻译：在一个实施方案中，用于产生具有镓离子的离子束的方法包括在等离子体室中提供镓化合物靶的至少一部分，所述镓化合物靶包含镓和至少一个附加元素。该方法还包括使用至少一种气态物质在等离子体室中引发等离子体，并提供气态蚀刻剂物质源以与镓化合物靶反应以形成挥发性镓物质。

4. 发明授权

US08455839B2 Cleaning of an extraction aperture of an ion source 有权
标题翻译：清洁离子源的提取孔
公开(公告)号：US08455839B2
公开(公告)日：2013-06-04
申请号：US12720960
申请日：2010-03-10
申请人： Craig R. Chaney , Alexander S. Perel , Neil J. Bassom , Leo V. Klos
发明人： Craig R. Chaney , Alexander S. Perel , Neil J. Bassom , Leo V. Klos
IPC分类号： H01J37/28 , B08B7/00
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/024
摘要： An ion source includes an arc chamber housing defining an arc chamber having an extraction aperture, and a wiper. The wiper is positioned within the arc chamber in a parked position and configured to be driven from the parked position to operational positions to clean the extraction aperture. A cleaning sub-assembly for an ion source includes a wiper configured to be positioned within an arc chamber of the ion source when in a parked position and driven from the parked position to operational positions to clean an extraction aperture of the ion source.
摘要翻译：离子源包括限定具有提取孔的电弧室的电弧室壳体和擦拭器。擦拭器位于电弧室内处于停放位置，并且构造成从停放位置驱动到操作位置以清洁提取孔。用于离子源的清洁子组件包括擦拭器，其构造成当处于停放位置时定位在离子源的电弧室内并且从停放位置驱动到操作位置以清洁离子源的提取孔。

5. 发明申请

US20130072008A1 TECHNIQUE FOR ION IMPLANTING A TARGET 有权
标题翻译：离子注入目标的技术
公开(公告)号：US20130072008A1
公开(公告)日：2013-03-21
申请号：US13613964
申请日：2012-09-13
申请人： Alexander S. Perel , Craig R. Chaney , Wayne D. LeBlanc , Robert Lindberg , Antonella Cucchetti , Neil J. Bassom , David Sporleder , James Young
发明人： Alexander S. Perel , Craig R. Chaney , Wayne D. LeBlanc , Robert Lindberg , Antonella Cucchetti , Neil J. Bassom , David Sporleder , James Young
IPC分类号： H01L21/265
CPC分类号： C23C14/48 , C23C14/564 , H01J37/08 , H01J37/3171 , H01J2237/022
摘要： A technique for ion implanting a target is disclosed. In accordance with one exemplary embodiment, the technique may be realized as a method for ion implanting a target, the method comprising: providing a predetermined amount of processing gas in an arc chamber of an ion source, the processing gas containing implant species and implant species carrier, where the implant species carrier may be one of O and H; providing a predetermined amount of dilutant into the arc chamber, wherein the dilutant may comprise a noble species containing material; and ionizing the processing gas and the dilutant.
摘要翻译：公开了用于离子注入靶的技术。根据一个示例性实施例，该技术可以被实现为用于离子注入靶的方法，所述方法包括：在离子源的电弧室中提供预定量的处理气体，所述处理气体含有植入物种类和植入物种载体，其中种植体载体可以是O和H之一; 将预定量的稀释剂提供到所述电弧室中，其中所述稀释剂可包括含有贵重物质的材料; 并使处理气体和稀释剂电离。

6. 发明申请

US20120048723A1 SPUTTER TARGET FEED SYSTEM 审中-公开
标题翻译： SPUTTER目标进料系统
公开(公告)号：US20120048723A1
公开(公告)日：2012-03-01
申请号：US12862104
申请日：2010-08-24
申请人： Craig R. Chaney
发明人： Craig R. Chaney
IPC分类号： C23C14/46 , C23C14/34
CPC分类号： H01J37/3171 , H01J37/08 , H01J2237/024 , H01J2237/081 , H01J2237/0827
摘要： An apparatus includes an arc chamber housing defining an arc chamber, and a feed system configured to feed a sputter target into the arc chamber. A method includes feeding a sputter target into an arc chamber defined by an arc chamber housing, and ionizing a portion of the sputter target.
摘要翻译：一种装置包括限定电弧室的电弧室壳体，以及配置成将溅射靶材馈入电弧室的馈电系统。一种方法包括将溅射靶馈送到由电弧室壳体限定的电弧室中，并将溅射靶的一部分电离。

7. 发明申请

US20110220812A1 CLEANING OF AN EXTRACTION APERTURE OF AN ION SOURCE 有权
标题翻译：清除离子源的提取孔
公开(公告)号：US20110220812A1
公开(公告)日：2011-09-15
申请号：US12720933
申请日：2010-03-10
申请人： Craig R. CHANEY , Alexander S. PEREL , Leo V. KLOS
发明人： Craig R. CHANEY , Alexander S. PEREL , Leo V. KLOS
IPC分类号： H01J27/08 , H01J99/00
CPC分类号： H01J27/08 , B08B1/008 , H01J27/024 , H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/024
摘要： An ion source includes an arc chamber housing defining an arc chamber having an extraction aperture, and a wiper assembly comprising a wiper positioned outside the arc chamber in a parked position and configured to be driven from the parked position to operational positions to clean the extraction aperture. A wiper assembly for an ion source includes a wiper configured to be positioned outside an arc chamber of the ion source when in a parked position and driven from the parked position to operational positions to clean an extraction aperture of the ion source.
摘要翻译：离子源包括限定具有提取孔的电弧室的电弧室壳体，以及擦拭器组件，其包括在处于停放位置的位于电弧室外部的擦拭器，并且构造成从停放位置驱动到操作位置以清洁提取孔。用于离子源的擦拭器组件包括擦拭器，其构造成当处于停放位置时定位在离子源的电弧室外部并且从停放位置驱动到操作位置以清洁离子源的提取孔。

8. 发明申请

US20110220144A1 CLEANING OF AN EXTRACTION APERTURE OF AN ION SOURCE 有权
标题翻译：清除离子源的提取孔
公开(公告)号：US20110220144A1
公开(公告)日：2011-09-15
申请号：US12720960
申请日：2010-03-10
申请人： Craig R. CHANEY , Alexander S. Perel , Neil J. Bassom , Leo V. Klos
发明人： Craig R. CHANEY , Alexander S. Perel , Neil J. Bassom , Leo V. Klos
IPC分类号： H01J27/08 , H01J99/00 , B08B7/00
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/024
摘要： An ion source includes an arc chamber housing defining an arc chamber having an extraction aperture, and a wiper. The wiper is positioned within the arc chamber in a parked position and configured to be driven from the parked position to operational positions to clean the extraction aperture. A cleaning sub-assembly for an ion source includes a wiper configured to be positioned within an arc chamber of the ion source when in a parked position and driven from the parked position to operational positions to clean an extraction aperture of the ion source.
摘要翻译：离子源包括限定具有提取孔的电弧室的电弧室壳体和擦拭器。擦拭器位于电弧室内处于停放位置，并且构造成从停放位置驱动到操作位置以清洁提取孔。用于离子源的清洁子组件包括擦拭器，其构造成当处于停放位置时定位在离子源的电弧室内并且从停放位置驱动到操作位置以清洁离子源的提取孔。

9. 发明授权

US08003957B2 Ethane implantation with a dilution gas 有权
标题翻译：用稀释气体进行乙烷注入
公开(公告)号：US08003957B2
公开(公告)日：2011-08-23
申请号：US12367741
申请日：2009-02-09
申请人： Craig R. Chaney , Adolph R. Dori , Christopher R. Hatem , Alexander S. Perel
发明人： Craig R. Chaney , Adolph R. Dori , Christopher R. Hatem , Alexander S. Perel
IPC分类号： G21K5/10 , H01J37/08
CPC分类号： C23C14/48 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01L21/26506 , H01L21/2658
摘要： To implant a carbon-containing species, a gas containing carbon is ionized in the ion chamber. The ionization of this gas will typically produce a number of ionized species. However, many of these resulting ionized species are not beneficial to the desired implant, as they contain only non-carbon atoms. These species must be eliminated before the implantation, leaving only carbon-based species. However, the current of the desired species may be low, thereby requiring extra energy or time to implant the desired dosage of carbon into a substrate. This can be improved through the use of a second gas. This second gas is used to dilute the primary carbon-containing gas to be ionized in the ion chamber. By incorporating this dilution gas, more of the resulting ionized species are beneficial to the carbon implantation.
摘要翻译：为了植入含碳物质，在离子室中离子化含有碳的气体。这种气体的电离通常会产生许多电离物质。然而，这些所得到的离子化物质中的许多物质对于期望的植入物是不利的，因为它们仅含有非碳原子。这些物种必须在植入前消除，只留下碳基物种。然而，所需物质的电流可能较低，从而需要额外的能量或时间来将所需剂量的碳注入到基底中。这可以通过使用第二气体来改善。该第二气体用于稀释离子室中要离子化的初级含碳气体。通过并入该稀释气体，更多的所得离子化物质对碳注入有益。

10. 发明申请

US20100024841A1 Ion Source and a Method for In-Situ Cleaning Thereof 有权
标题翻译：离子源及其原位清洗方法
公开(公告)号：US20100024841A1
公开(公告)日：2010-02-04
申请号：US12533318
申请日：2009-07-31
申请人： Bon-Woong Koo , Christopher R. Campbell , Craig R. Chaney , Robert Lindberg , Wilheim P. Platow , Alexander S. Perel
发明人： Bon-Woong Koo , Christopher R. Campbell , Craig R. Chaney , Robert Lindberg , Wilheim P. Platow , Alexander S. Perel
IPC分类号： B08B5/00 , H01J27/02
CPC分类号： H01J27/022 , H01J27/02 , H01J27/14 , H01J37/08 , H01J37/3002 , H01J37/3171 , H01J2237/022 , H01J2237/31705
摘要： An ion source and method of cleaning are disclosed. One or more heating units are placed in close proximity to the inner volume of the ion source, so as to affect the temperature within the ion source. In one embodiment, one or more walls of the ion source have recesses into which heating units are inserted. In another embodiment, one or more walls of the ion source are constructed of a conducting circuit and an insulating layer. By utilizing heating units near the ion source, it is possible to develop new methods of cleaning the ion source. Cleaning gas is flowed into the ion source, where it is ionized, either by the cathode, as in normal operating mode, or by the heat generated by the heating units. The cleaning gas is able to remove residue from the walls of the ion source more effectively due to the elevated temperature.
摘要翻译：公开了一种离子源和清洁方法。一个或多个加热单元放置在离离子源的内部体积附近，以便影响离子源内的温度。在一个实施例中，离子源的一个或多个壁具有插入加热单元的凹部。在另一个实施例中，离子源的一个或多个壁由导电电路和绝缘层构成。通过利用离子源附近的加热单元，可以开发清洗离子源的新方法。清洁气体流入离子源，其中它通过阴极，如在正常操作模式中，或通过加热单元产生的热量而被离子化。由于升高的温度，清洁气体能够更有效地从离子源的壁去除残留物。

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