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1. 发明授权

US06703771B2 Monochromatic vacuum ultraviolet light source for photolithography applications based on a high-pressure microhollow cathode discharge 失效
标题翻译：基于高压微孔阴极放电的光刻应用的单色真空紫外光源
公开(公告)号：US06703771B2
公开(公告)日：2004-03-09
申请号：US09876238
申请日：2001-06-07
申请人： Kurt F. Becker , Peter F. Kurunczi , Karl H. Schoenbach
发明人： Kurt F. Becker , Peter F. Kurunczi , Karl H. Schoenbach
IPC分类号： H01J188
CPC分类号： H01J61/09 , H01J61/16
摘要： A light source with a sealed, light-transmissive tube filled with high pressure gases or high pressure gas mixtures and a microhollow cathode (MHC) discharge capable of excimer production are provided.
摘要翻译：提供了具有填充有高压气体或高压气体混合物的密封的透光管的光源和能够产生准分子的微气体阴极（MHC）放电。

2. 发明授权

US08003956B2 Method and apparatus for controlling beam current uniformity in an ion implanter 有权
标题翻译：用于控制离子注入机中束流均匀性的方法和装置
公开(公告)号：US08003956B2
公开(公告)日：2011-08-23
申请号：US12244978
申请日：2008-10-03
申请人： D. Jeffrey Lischer , John (Bon-Woong) Koo , Peter F. Kurunczi , Shardul Patel , Wilhelm P. Platow
发明人： D. Jeffrey Lischer , John (Bon-Woong) Koo , Peter F. Kurunczi , Shardul Patel , Wilhelm P. Platow
IPC分类号： G21K5/10
CPC分类号： H01J37/3171 , H01J37/026 , H01J2237/004 , H01J2237/0041 , H01J2237/006 , H01J2237/047 , H01J2237/182 , H01J2237/188 , H01J2237/24535 , H01J2237/24542 , H01J2237/248 , H01J2237/30438 , H01J2237/30477 , H01J2237/31701 , H01J2237/31703
摘要： An ion implantation system for neutralizing the space charge effect associated with a high current low energy ion beam. The implantation system includes an ion source configured to receive a dopant gas and generate ions having a particular energy and mass from which ions are extracted through an aperture. A work piece positioned downstream of the ion source for receiving the extracted ions in the form of an ion beam. A bleed gas channel disposed between the ion source and the work piece. The bleed gas channel supplying a gas used to neutralize the space charge effect associated with the ion beam.
摘要翻译：一种用于中和与高电流低能量离子束相关的空间电荷效应的离子注入系统。植入系统包括被配置为接收掺杂剂气体并产生具有特定能量和质量的离子的离子源，离子通过孔提取离子。位于离子源下游的工件，用于接收离子束形式的提取的离子。排放气体通道，设置在离子源和工件之间。排出气体通道供应用于中和与离子束相关联的空间电荷效应的气体。

3. 发明申请

US20100084582A1 METHOD AND APPARATUS FOR CONTROLLING BEAM CURRENT UNIFORMITY IN AN ION IMPLANTER 有权
标题翻译：用于控制离子植入物中光束电流均匀性的方法和装置
公开(公告)号：US20100084582A1
公开(公告)日：2010-04-08
申请号：US12244978
申请日：2008-10-03
申请人： D. Jeffrey LISCHER , John (Bon-Woong) KOO , Peter F. KURUNCZI , Shardul PATEL , Wilhelm P. PLATOW
发明人： D. Jeffrey LISCHER , John (Bon-Woong) KOO , Peter F. KURUNCZI , Shardul PATEL , Wilhelm P. PLATOW
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J37/026 , H01J2237/004 , H01J2237/0041 , H01J2237/006 , H01J2237/047 , H01J2237/182 , H01J2237/188 , H01J2237/24535 , H01J2237/24542 , H01J2237/248 , H01J2237/30438 , H01J2237/30477 , H01J2237/31701 , H01J2237/31703
摘要： An ion implantation system for neutralizing the space charge effect associated with a high current low energy ion beam. The implantation system includes an ion source configured to receive a dopant gas and generate ions having a particular energy and mass from which ions are extracted through an aperture. A work piece positioned downstream of the ion source for receiving the extracted ions in the form of an ion beam. A bleed gas channel disposed between the ion source and the work piece. The bleed gas channel supplying a gas used to neutralize the space charge effect associated with the ion beam.
摘要翻译：一种用于中和与高电流低能量离子束相关的空间电荷效应的离子注入系统。植入系统包括被配置为接收掺杂剂气体并产生具有特定能量和质量的离子的离子源，离子通过孔提取离子。位于离子源下游的工件，用于接收离子束形式的提取的离子。排放气体通道，设置在离子源和工件之间。排出气体通道供应用于中和与离子束相关联的空间电荷效应的气体。

4. 发明授权

US08461554B1 Apparatus and method for charge neutralization during processing of a workpiece 有权
标题翻译：在工件加工过程中电荷中和的装置和方法
公开(公告)号：US08461554B1
公开(公告)日：2013-06-11
申请号：US13313078
申请日：2011-12-07
申请人： Peter F. Kurunczi , Christopher J. Leavitt , Daniel Distaso , Timothy J. Miller
发明人： Peter F. Kurunczi , Christopher J. Leavitt , Daniel Distaso , Timothy J. Miller
IPC分类号： H01J3/14
CPC分类号： H01J37/32146 , G21K1/14 , H01J37/026 , H01J37/3171 , H01J37/32412 , H01J37/32422 , H01J2237/0044
摘要： A processing system may include a plasma source for providing a plasma and a workpiece holder arranged to receive ions from the plasma. The processing system may further include a pulsed bias circuit electrically coupled to the plasma source and operable to switch a bias voltage supplied to the plasma source between a high voltage state in which the plasma source is biased positively with respect to ground and a low voltage state in which the plasma source is biased negatively with respect to the ground.
摘要翻译：处理系统可以包括用于提供等离子体的等离子体源和布置成接收来自等离子体的离子的工件夹持器。处理系统还可以包括电耦合到等离子体源的脉冲偏置电路，并且可操作以在提供给等离子体源的高电压状态之间切换偏置电压，其中等离子体源相对于地面被正偏置，而低电压状态其中等离子体源相对于地面被负偏压。

5. 发明申请

US20110143527A1 TECHNIQUES FOR GENERATING UNIFORM ION BEAM 审中-公开
标题翻译：用于产生均匀离子束的技术
公开(公告)号：US20110143527A1
公开(公告)日：2011-06-16
申请号：US12964357
申请日：2010-12-09
申请人： Wilhelm P. PLATOW , Neil J. Bassom , Peter F. Kurunczi , Alexander S. Perel , Craig R. Chaney
发明人： Wilhelm P. PLATOW , Neil J. Bassom , Peter F. Kurunczi , Alexander S. Perel , Craig R. Chaney
IPC分类号： H01L21/265 , H01J37/317 , H01J37/02
CPC分类号： H01J37/08 , H01J37/3171
摘要： Herein an improved technique for generating uniform ion beam is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate with an ion implanter comprising an ion source. The method may comprise: introducing dopant into an ion source chamber of the ion source, the dopant may comprise molecules containing boron and hydrogen; introducing diluent into the ion source chamber, the diluent containing halogen; ionizing the dopant and the diluent into molecular ions and halogen containing ions, the molecular ions containing boron and hydrogen; extracting the molecular ions and the halogen containing ions from the ions source chamber; and directing the molecular ions toward the substrate, where the halogen containing ions may improve uniformity of the molecular ions extracted from the ion source and extend the lifetime of the ion source.
摘要翻译：本发明公开了一种用于产生均匀离子束的改进技术。在一个特定的示例性实施例中，该技术可以被实现为用于使用包括离子源的离子注入机来处理衬底的方法。该方法可以包括：将掺杂剂引入到离子源的离子源室中，掺杂剂可以包含含有硼和氢的分子; 将稀释剂引入离子源室，稀释剂含有卤素; 将掺杂剂和稀释剂电离成分子离子和含卤素的离子，含有硼和氢的分子离子; 从离子源室中提取分子离子和含卤素离子; 并且将分子离子引导到衬底，其中含卤素的离子可以改善从离子源提取的分子离子的均匀性并延长离子源的寿命。

6. 发明申请

US20100327159A1 Ion Source Cleaning End Point Detection 有权
标题翻译：离子源清洗终点检测
公开(公告)号：US20100327159A1
公开(公告)日：2010-12-30
申请号：US12492894
申请日：2009-06-26
申请人： Wilhelm P. Platow , Neil J. Bassom , Peter F. Kurunczi , Alexander S. Perel , Craig R. Chaney
发明人： Wilhelm P. Platow , Neil J. Bassom , Peter F. Kurunczi , Alexander S. Perel , Craig R. Chaney
IPC分类号： H01J37/317 , H01J37/05 , H01J49/26
CPC分类号： H01J49/10 , H01J27/02 , H01J37/08 , H01J37/3171 , H01J2209/017 , H01J2237/022 , H01J2237/05 , H01J2237/30466
摘要： In an ion implanter, a Faraday cup is utilized to receive an ion beam generated during ion source cleaning. The detected beam has an associated mass spectrum which indicates when the ion source cleaning process is complete. The mass spectrum results in a signal composed of a cleaning agent and the material comprising the ion source. This signal will rise over time as the ion source chamber is being cleaned and will level-off and remain constant once the deposits are etched away from the source chamber, thereby utilizing existing implant tools to determine endpoint detection during ion source cleaning.
摘要翻译：在离子注入机中，法拉第杯用于接收在离子源清洁期间产生的离子束。检测到的光束具有相关联的质谱，其指示何时完成离子源清洁过程。质谱产生由清洁剂和包含离子源的材料组成的信号。当离子源室被清洁时，该信号将随着时间的推移而升高，并且一旦沉积物从源室被蚀刻掉，就会保持恒定，从而利用现有的植入工具确定离子源清洁期间的端点检测。

7. 发明申请

US20130146790A1 APPARATUS AND METHOD FOR CHARGE NEUTRALIZATION DURING PROCESSING OF A WORKPIECE 有权
标题翻译：在工作过程中充电中和的装置和方法
公开(公告)号：US20130146790A1
公开(公告)日：2013-06-13
申请号：US13313078
申请日：2011-12-07
申请人： Peter F. Kurunczi , Christopher J. Leavitt , Daniel Distaso , Timothy J. Miller
发明人： Peter F. Kurunczi , Christopher J. Leavitt , Daniel Distaso , Timothy J. Miller
IPC分类号： G21K5/08 , H05H1/24
CPC分类号： H01J37/32146 , G21K1/14 , H01J37/026 , H01J37/3171 , H01J37/32412 , H01J37/32422 , H01J2237/0044
摘要： A processing system may include a plasma source for providing a plasma and a workpiece holder arranged to receive ions from the plasma. The processing system may further include a pulsed bias circuit electrically coupled to the plasma source and operable to switch a bias voltage supplied to the plasma source between a high voltage state in which the plasma source is biased positively with respect to ground and a low voltage state in which the plasma source is biased negatively with respect to the ground.
摘要翻译：处理系统可以包括用于提供等离子体的等离子体源和布置成接收来自等离子体的离子的工件夹持器。处理系统还可以包括电耦合到等离子体源的脉冲偏置电路，并且可操作以在提供给等离子体源的高电压状态之间切换偏置电压，其中等离子体源相对于地面被正偏置，而低电压状态其中等离子体源相对于地面被负偏压。

8. 发明授权

US08003959B2 Ion source cleaning end point detection 有权
标题翻译：离子源清洗终点检测
公开(公告)号：US08003959B2
公开(公告)日：2011-08-23
申请号：US12492894
申请日：2009-06-26
申请人： Wilhelm P. Platow , Neil J. Bassom , Peter F. Kurunczi , Alexander S. Perel , Craig R. Chaney
发明人： Wilhelm P. Platow , Neil J. Bassom , Peter F. Kurunczi , Alexander S. Perel , Craig R. Chaney
IPC分类号： H01J37/317 , H01J37/08 , H01J49/10 , H01J27/02 , H01J9/38
CPC分类号： H01J49/10 , H01J27/02 , H01J37/08 , H01J37/3171 , H01J2209/017 , H01J2237/022 , H01J2237/05 , H01J2237/30466
摘要： In an ion implanter, a Faraday cup is utilized to receive an ion beam generated during ion source cleaning. The detected beam has an associated mass spectrum which indicates when the ion source cleaning process is complete. The mass spectrum results in a signal composed of a cleaning agent and the material comprising the ion source. This signal will rise over time as the ion source chamber is being cleaned and will level-off and remain constant once the deposits are etched away from the source chamber, thereby utilizing existing implant tools to determine endpoint detection during ion source cleaning.
摘要翻译：在离子注入机中，法拉第杯用于接收在离子源清洁期间产生的离子束。检测到的光束具有相关联的质谱，其指示何时完成离子源清洁过程。质谱产生由清洁剂和包含离子源的材料组成的信号。当离子源室被清洁时，该信号将随着时间的推移而升高，并且一旦沉积物从源室被蚀刻掉，就会保持恒定，从而利用现有的植入工具确定离子源清洁期间的端点检测。

9. 发明授权

US07767986B2 Method and apparatus for controlling beam current uniformity in an ion implanter 有权
标题翻译：用于控制离子注入机中束流均匀性的方法和装置
公开(公告)号：US07767986B2
公开(公告)日：2010-08-03
申请号：US12143144
申请日：2008-06-20
申请人： Rajesh Dorai , Peter F. Kurunczi , Alexander S. Perel , Wilhelm P. Platow
发明人： Rajesh Dorai , Peter F. Kurunczi , Alexander S. Perel , Wilhelm P. Platow
IPC分类号： H01J37/08 , H01J37/15 , H01J27/02
CPC分类号： H01J37/3171 , H01J37/04 , H01J37/08 , H01J37/09 , H01J2237/024 , H01J2237/0455 , H01J2237/08 , H01J2237/083 , H01J2237/0835 , H01J2237/24542
摘要： An electrode assembly for use with an ion source chamber or as part of an ion implanter processing system to provide a uniform ion beam profile. The electrode assembly includes an electrode having an extraction slot with length L aligned with an aperture of the ion source chamber for extracting an ion beam. The electrode includes a plurality of segments partitioned within the length of the extraction slot where each of the segments is configured to be displaced in at least one direction with respect to the ion beam. A plurality of actuators are connected to the plurality of electrode segments for displacing one or more of the segments. By displacing at least one of the plurality of electrode segments, the current density of a portion of the ion beam corresponding to the position of the segment within the extraction slot is modified to provide a uniform current density beam profile associated with the extracted ion beam.
摘要翻译：一种与离子源室一起使用或作为离子注入机处理系统的一部分以提供均匀离子束分布的电极组件。电极组件包括具有长度为L的提取槽的电极，其与用于提取离子束的离子源室的孔径对准。电极包括在提取槽的长度内分隔的多个段，其中每个段被配置为相对于离子束在至少一个方向上移位。多个致动器连接到多个电极段，用于移动一个或多个段。通过移位多个电极段中的至少一个，修改与提取槽内的段的位置相对应的一部分离子束的电流密度，以提供与提取的离子束相关联的均匀的电流密度波束轮廓。

10. 发明授权

US07476877B2 Wafer charge monitoring 有权
标题翻译：晶圆充电监控
公开(公告)号：US07476877B2
公开(公告)日：2009-01-13
申请号：US11353820
申请日：2006-02-14
申请人： Russell J. Low , George M. Gammel , Peter F. Kurunczi , Eric Cobb
发明人： Russell J. Low , George M. Gammel , Peter F. Kurunczi , Eric Cobb
IPC分类号： H01J37/30
CPC分类号： H01J37/3171 , H01J2237/24405 , H01J2237/31703
摘要： A charge monitoring system may include a platen having a surface configured to accept a wafer thereon, and a charge monitor disposed relative to the platen so that an ion beam simultaneously strikes a portion of the charge monitor and a portion of the wafer. The charge monitor is configured to provide a charge monitor signal representative of a charge on a surface of the wafer when the ion beam simultaneously strikes the portion of the charge monitor and the portion of the wafer. The charge monitor signal may depend, at least in part, on a beam potential of the ion beam.
摘要翻译：电荷监测系统可以包括具有被配置为在其上接受晶片的表面的压板和相对于压板设置的电荷监测器，使得离子束同时撞击电荷监测器的一部分和晶片的一部分。电荷监视器被配置为当离子束同时撞击电荷监视器的部分和晶片的部分时，提供表示晶片表面上的电荷的电荷监测信号。电荷监测信号至少部分地取决于离子束的束电位。

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