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1. 发明授权

US06294479B1 Film forming method and apparatus 失效
标题翻译：成膜方法和装置
公开(公告)号：US06294479B1
公开(公告)日：2001-09-25
申请号：US08384597
申请日：1995-02-03
申请人： Akinori Ebe , Satoshi Nishiyama , Kiyoshi Ogata , Yasuo Suzuki
发明人： Akinori Ebe , Satoshi Nishiyama , Kiyoshi Ogata , Yasuo Suzuki
IPC分类号： H01L2131
CPC分类号： C23C14/562 , C23C14/022 , C23C14/027 , C23C14/22
摘要： A method and apparatus for radiation of ions from an ion source 4 onto a surface of an objective substrate T and vacuum evaporation of a predetermined material from an evaporation source 5 onto the surface of the substrate, simultaneously while the substrate is continuously moved. The ion radiation from the ion source 4 is applied to a portion of a region reached by the evaporation material from the evaporation source 5, upstream relative to the direction of movement of the substrate from the center of that region and which is lower in evaporation speed than the center of the region, to thereby continuously form a mixture layer of substrate material atoms and evaporation material atoms on the surface of the substrate and then continuously form a vacuum evaporation film with a predetermined thickness on the mixture layer.
摘要翻译：一种用于将离子源4辐射到目标衬底T的表面上并将预定材料从蒸发源5真空蒸发到衬底表面上的方法和装置，同时衬底被连续移动。来自离子源4的离子辐射被施加到从蒸发源5到达的蒸发材料到达的区域的一部分上，相对于衬底从该区域的中心移动的方向，并且蒸发速度较低从而在基板的表面上连续地形成基板材料原子和蒸发材料原子的混合层，然后在混合层上连续地形成具有预定厚度的真空蒸镀膜。

2. 发明授权

US5496772A Method of manufacturing film carrier type substrate 失效
标题翻译：制造薄膜载体型基板的方法
公开(公告)号：US5496772A
公开(公告)日：1996-03-05
申请号：US892380
申请日：1992-06-04
申请人： Akinori Ebe , Kiyoshi Ogata , Satoshi Nishiyama
发明人： Akinori Ebe , Kiyoshi Ogata , Satoshi Nishiyama
IPC分类号： H01L21/48 , H05K1/00 , H05K3/02 , H05K3/38 , H01L21/44
CPC分类号： H05K3/388 , H01L21/4846 , H05K1/0393 , H05K2201/2063 , H05K3/022
摘要： A film carrier type substrate includes a film made of organic high molecular substance, a metal layer formed over the film by depositing metal vapor and irradiating nitrogen gas ions on the film and a mixing layer made of a mixture of the materials of both the metal layer and the film formed in the interface between the metal layer and the film. Prior to forming the metal layer, inert gas ions and/or nitrogen gas ions may be irradiated on the film in advance.
摘要翻译：膜载体型基板包括由有机高分子物质制成的膜，通过沉积金属蒸气并在膜上照射氮气离子在该膜上形成的金属层和由金属层的材料的混合物制成的混合层并且在金属层和膜之间的界面中形成膜。在形成金属层之前，可以预先将惰性气体离子和/或氮气离子照射在膜上。

3. 发明授权

US5316802A Method of forming copper film on substrate 失效
标题翻译：在基材上形成铜膜的方法
公开(公告)号：US5316802A
公开(公告)日：1994-05-31
申请号：US892378
申请日：1992-06-04
申请人： Akinori Ebe , Kiyoshi Ogata , Satoshi Nishiyama , Naoto Kuratani , Taizo Okazaki
发明人： Akinori Ebe , Kiyoshi Ogata , Satoshi Nishiyama , Naoto Kuratani , Taizo Okazaki
IPC分类号： C23C14/20 , C23C14/22 , C30B23/02 , B05D3/06
CPC分类号： C23C14/22 , C23C14/20 , C30B23/002 , C30B23/02 , C30B29/02 , Y10S428/901 , Y10T428/24355 , Y10T428/31678 , Y10T428/31681 , Y10T428/31721
摘要： A copper film coated substrate includes a substrate and a copper film formed on a surface of the substrate. The copper film has an X-ray diffraction intensity of 2.0 cps per unit film thickness at a crystal orientation (111) face of the copper film. A crystal orientation of a copper thin film is controlled by irradiating a surface of a substrate with inert gas ions before forming a copper thin film on the substrate by a physical vapor deposition process. A copper thin film is formed by irradiating a surface of a substrate with ions, and depositing a copper thin film on the irradiated substrate. In the ion irradiating step, an ion irradiation energy for a dosage of the irradiated ions is controlled, so that crystal is greatly grown to be orientated in a direction of copper (111) face with a less dosage of the irradiated ions.
摘要翻译：铜膜被覆基板包括在基板的表面上形成的基板和铜膜。铜膜在铜膜的晶体取向（111）面上的单位膜厚的X射线衍射强度为2.0cps。通过物理气相沉积工艺在衬底上形成铜薄膜之前，用惰性气体离子照射衬底的表面来控制铜薄膜的晶体取向。通过用离子照射衬底的表面并在照射的衬底上沉积铜薄膜来形成铜薄膜。在离子照射步骤中，控制照射离子的用量的离子照射能量，使得以较少量的照射离子在铜（111）面的方向上极大地生长晶体以取向。

4. 发明授权

US5501911A Copper crystal film coated organic substrate 失效
标题翻译：铜晶体膜涂有机基材
公开(公告)号：US5501911A
公开(公告)日：1996-03-26
申请号：US65913
申请日：1993-05-25
申请人： Akinori Ebe , Kiyoshi Ogata , Satoshi Nishiyama , Naoto Kuratani , Taizo Okazaki
发明人： Akinori Ebe , Kiyoshi Ogata , Satoshi Nishiyama , Naoto Kuratani , Taizo Okazaki
IPC分类号： C23C14/20 , C23C14/22 , C30B23/02 , B32B15/08 , B32B15/20 , B05D3/06
CPC分类号： C23C14/22 , C23C14/20 , C30B23/002 , C30B23/02 , C30B29/02 , Y10S428/901 , Y10T428/24355 , Y10T428/31678 , Y10T428/31681 , Y10T428/31721
摘要： A copper film coated substrate includes a substrate and a copper film formed on a surface of the substrate. The copper film has an X-ray diffraction intensity of 2.0 cps/nm or more per unit film thickness at a crystal orientation (111) face of the copper film. A crystal orientation of a copper thin film is controlled by irradiating a surface of a substrate with inert gas ions before forming a copper thin film on the substrate by a physical vapor deposition process. A copper thin film is formed by irradiating a surface of a substrate with ions, and depositing a copper thin film on the irradiated substrate. In the ion irradiating step, an ion irradiation energy for a dosage of the irradiated ions is controlled, so that crystal is greatly grown to be orientated in a direction of copper (111) face with a less dosage of the irradiated ions.
摘要翻译：铜膜被覆基板包括在基板的表面上形成的基板和铜膜。铜膜在铜膜的晶体取向（111）面上的单位膜厚的X射线衍射强度为2.0cps / nm以上。通过物理气相沉积工艺在衬底上形成铜薄膜之前，用惰性气体离子照射衬底的表面来控制铜薄膜的晶体取向。通过用离子照射衬底的表面并在照射的衬底上沉积铜薄膜来形成铜薄膜。在离子照射步骤中，控制照射离子的用量的离子照射能量，使得以较少量的照射离子在铜（111）面的方向上极大地生长晶体以取向。

5. 发明授权

US6103321A Method of manufacturing an ultraviolet resistant object 失效
标题翻译：制造抗紫外线物体的方法
公开(公告)号：US6103321A
公开(公告)日：2000-08-15
申请号：US212381
申请日：1998-12-16
申请人： Yasushi Fujinami , Akinori Ebe , Osamu Imai , Kiyoshi Ogata
发明人： Yasushi Fujinami , Akinori Ebe , Osamu Imai , Kiyoshi Ogata
IPC分类号： C08J7/00 , B29C35/08 , B29C59/16 , B32B7/02 , C08J7/06 , C23C14/02 , C23C14/08 , C23C16/02 , B05D3/00
CPC分类号： B29C59/16 , C23C14/027 , C23C14/083 , B29C2035/0872
摘要： A method of manufacturing an ultraviolet resistant object, wherein the object has at least a portion made of a polymer material, and is provided with an ultraviolet shielding film covering at least a portion of a surface of the portion made of the polymer material, including the steps of forming the ultraviolet shielding film by vapor deposition over the surface of the portion to be covered with the film; and irradiating, prior to the formation of the ultraviolet shielding film or in an initial stage of the film forming step, the film formation surface with ions with an energy in a range from 0.05 keV to 2 keV to attain the total irradiation rate in a range from 1.times.10.sup.13 ions/cm.sup.2 to 5.times.10.sup.17 ions/cm.sup.2.
摘要翻译：一种制造防紫外线物体的方法，其中所述物体至少具有由聚合物材料制成的部分，并且设置有覆盖由所述聚合物材料制成的部分的表面的至少一部分的紫外线屏蔽膜，所述紫外线屏蔽膜包括通过气相沉积在待覆盖的部分的表面上形成紫外线屏蔽膜的步骤; 并且在形成紫外线屏蔽膜之前或在成膜步骤的初始阶段，在成膜表面上照射能量在0.05keV至2keV的能量的离子，以使总辐照率达到一定范围从1×10 13离子/ cm 2到5×10 17个离子/ cm 2。

6. 发明授权

US08675817B2 Industrial X-ray generator 有权
标题翻译：工业X射线发生器
公开(公告)号：US08675817B2
公开(公告)日：2014-03-18
申请号：US13194430
申请日：2011-07-29
申请人： Kiyoshi Ogata , Tetsuo Kani , Makoto Kanbe , Yoshihiro Takeda , Takahisa Sato
发明人： Kiyoshi Ogata , Tetsuo Kani , Makoto Kanbe , Yoshihiro Takeda , Takahisa Sato
IPC分类号： H05G1/10
CPC分类号： H01J35/16 , H01J35/045 , H01J2235/1216 , H01J2235/1291 , H01J2235/166 , H05G1/06 , H05G1/10
摘要： An X-ray generator includes a booster circuit formed by sequentially connecting a plurality of boosting steps extending from a low-voltage terminal to a high-voltage terminal of its own.The booster circuit is arranged in a lateral region of the X-ray tube so as to make the low-voltage terminal of its own correspond to the anode of the X-ray tube and the high-voltage terminal of its own correspond to the cathode of the X-ray tube. A lead wire extending from the cathode to the outside of the X-ray tube is connected to the high-voltage terminal of the booster circuit. A molded member containing insulating resin is formed to shield at least a cathode side end part of the X-ray tube, the lead wire outwardly extending from the cathode side end part and a high-voltage terminal side end part of the booster circuit.
摘要翻译： X射线发生器包括通过将从低压端子延伸到多个升压步骤顺序地连接到本身的高压端子而形成的升压电路。升压电路配置在X射线管的横向区域，以使其本身的低压端子对应于X射线管的阳极，并且其本身的高电压端子对应于阴极的X射线管。从X射线管的阴极延伸到外部的引线与升压电路的高压端子连接。形成包含绝缘树脂的模制件，用于屏蔽X射线管的至少阴极侧端部，引线从升压电路的阴极侧端部和高压端子侧端部向外延伸。

7. 发明申请

US20120027179A1 INDUSTRIAL X-RAY GENERATOR 有权
标题翻译：工业X射线发生器
公开(公告)号：US20120027179A1
公开(公告)日：2012-02-02
申请号：US13194430
申请日：2011-07-29
申请人： Kiyoshi Ogata , Tetsuo Kani , Makoto Kanbe , Yoshihiro Takeda , Takahisa Sato
发明人： Kiyoshi Ogata , Tetsuo Kani , Makoto Kanbe , Yoshihiro Takeda , Takahisa Sato
IPC分类号： H05G1/10
CPC分类号： H01J35/16 , H01J35/045 , H01J2235/1216 , H01J2235/1291 , H01J2235/166 , H05G1/06 , H05G1/10
摘要： An X-ray generator includes a booster circuit formed by sequentially connecting a plurality of boosting steps extending from a low-voltage terminal to a high-voltage terminal of its own.The booster circuit is arranged in a lateral region of the X-ray tube so as to make the low-voltage terminal of its own correspond to the anode of the X-ray tube and the high-voltage terminal of its own correspond to the cathode of the X-ray tube. A lead wire extending from the cathode to the outside of the X-ray tube is connected to the high-voltage terminal of the booster circuit. A molded member containing insulating resin is formed to shield at least a cathode side end part of the X-ray tube, the lead wire outwardly extending from the cathode side end part and a high-voltage terminal side end part of the booster circuit.
摘要翻译： X射线发生器包括通过将从低压端子延伸到多个升压步骤顺序地连接到本身的高电压端子而形成的升压电路。升压电路配置在X射线管的横向区域，以使其本身的低压端子对应于X射线管的阳极，并且其自身的高压端子对应于阴极的X射线管。从X射线管的阴极延伸到外部的引线与升压电路的高电压端子连接。形成包含绝缘树脂的模制件，用于屏蔽X射线管的至少阴极侧端部，引线从升压电路的阴极侧端部和高压端子侧端部向外延伸。

8. 发明申请

US20050142701A1 Display device and method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20050142701A1
公开(公告)日：2005-06-30
申请号：US10891522
申请日：2004-07-15
申请人： Hironaru Yamaguchi , Kiyoshi Ogata , Takuo Tamura , Jun Gotoh , Masakazu Saito , Kazuo Takeda
发明人： Hironaru Yamaguchi , Kiyoshi Ogata , Takuo Tamura , Jun Gotoh , Masakazu Saito , Kazuo Takeda
IPC分类号： G02F1/1368 , G02F1/136 , G02F1/1362 , G09F9/30 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786 , H01L21/00 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L21/02686 , G02F1/13454 , H01L21/02595 , H01L21/2026 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film. The grain size distribution of the polysilicon film is measured. An optimum value of energy density of laser beam irradiation is calculated on the basis of grain size values measured at two points A and B of the polysilicon film. Then, the average film thickness of a next amorphous silicon film is measured. A value of energy density of laser beam irradiation is calculated on the basis of the average film thickness of the next amorphous silicon film and the average film thickness of the previous amorphous silicon film. The value of energy density is fed back to a laser beam irradiation system. As described above, the energy density of laser beam irradiation to be applied on a silicon film formed on a substrate is controlled in accordance with the film thickness of the silicon film whenever the film thickness of the silicon film is measured. Accordingly, polysilicon uniform and large in grain size can be formed on the whole surface of a large-size substrate. As a result, polysilicon TFTs can be formed in a large area.
摘要翻译：测量在基板上形成的非晶硅膜的平均膜厚。然后，用激光束照射非晶硅膜以形成多晶硅膜。测量多晶硅膜的晶粒尺寸分布。基于在多晶硅膜的两点A和B测量的晶粒尺寸值来计算激光束照射的能量密度的最佳值。然后，测定下一非晶硅膜的平均膜厚。基于下一非晶硅膜的平均膜厚和先前的非晶硅膜的平均膜厚计算激光束照射的能量密度值。能量密度的值被反馈到激光束照射系统。如上所述，每当测量硅膜的膜厚时，根据硅膜的膜厚度来控制施加在形成在基板上的硅膜上的激光束照射的能量密度。因此，可以在大尺寸基板的整个表面上形成均匀且粒径大的多晶硅。结果，可以在大面积上形成多晶硅TFT。

9. 发明授权

US06815717B2 Thin-film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US06815717B2
公开(公告)日：2004-11-09
申请号：US09988585
申请日：2001-11-20
申请人： Kazuhiko Horikoshi , Kiyoshi Ogata , Miwako Nakahara , Takuo Tamura , Yasushi Nakano , Ryoji Oritsuki , Toshihiko Itoga , Takahiro Kamo
发明人： Kazuhiko Horikoshi , Kiyoshi Ogata , Miwako Nakahara , Takuo Tamura , Yasushi Nakano , Ryoji Oritsuki , Toshihiko Itoga , Takahiro Kamo
IPC分类号： H01L2904
CPC分类号： H01L29/4908 , H01L29/66757
摘要： To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H2O or N2O gas is fed at a processing temperature of 500° C. or below, or the polycrystalline silicon layer is previously treated with a solution such as ozone water or an aqueous NH3/hydrogen peroxide solution, followed by oxidation treatment with ozone, to form a silicon oxide layer with a thickness of 4 nm or more at the surface of the polycrystalline silicon layer for forming a thin-film transistor having characteristics that are less varying on a glass substrate previously not annealed.

10. 发明授权

US06656592B2 Carbon film and method of forming the same 失效
标题翻译：碳膜及其形成方法
公开(公告)号：US06656592B2
公开(公告)日：2003-12-02
申请号：US09977222
申请日：2001-10-16
申请人： Koji Miyake , Yasuo Murakami , Jo Takeuchi , Takahiro Nakahigashi , Kiyoshi Ogata
发明人： Koji Miyake , Yasuo Murakami , Jo Takeuchi , Takahiro Nakahigashi , Kiyoshi Ogata
IPC分类号： B32B900
CPC分类号： C23C16/26 , Y10T428/30
摘要： A carbon film C containing carbon as a main component, formed on the surface of a soft base material 4, characterized in that the film C is cracked A and divided into a plurality of regions B, and an average area of respective regions (blocks) surrounded by cracks A is 0.15×10−3 mm2 to 20×10−3 mm2.
摘要翻译：在软质基材4的表面形成有以碳为主要成分的碳膜C，其特征在于，膜C断裂A，分割成多个区域B，各区域（块）的平均面积被裂缝A包围在0.15×10 -3 mm 2至20×10 -3 mm 2之间。

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