专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US6103321A Method of manufacturing an ultraviolet resistant object 失效
标题翻译：制造抗紫外线物体的方法
公开(公告)号：US6103321A
公开(公告)日：2000-08-15
申请号：US212381
申请日：1998-12-16
申请人： Yasushi Fujinami , Akinori Ebe , Osamu Imai , Kiyoshi Ogata
发明人： Yasushi Fujinami , Akinori Ebe , Osamu Imai , Kiyoshi Ogata
IPC分类号： C08J7/00 , B29C35/08 , B29C59/16 , B32B7/02 , C08J7/06 , C23C14/02 , C23C14/08 , C23C16/02 , B05D3/00
CPC分类号： B29C59/16 , C23C14/027 , C23C14/083 , B29C2035/0872
摘要： A method of manufacturing an ultraviolet resistant object, wherein the object has at least a portion made of a polymer material, and is provided with an ultraviolet shielding film covering at least a portion of a surface of the portion made of the polymer material, including the steps of forming the ultraviolet shielding film by vapor deposition over the surface of the portion to be covered with the film; and irradiating, prior to the formation of the ultraviolet shielding film or in an initial stage of the film forming step, the film formation surface with ions with an energy in a range from 0.05 keV to 2 keV to attain the total irradiation rate in a range from 1.times.10.sup.13 ions/cm.sup.2 to 5.times.10.sup.17 ions/cm.sup.2.
摘要翻译：一种制造防紫外线物体的方法，其中所述物体至少具有由聚合物材料制成的部分，并且设置有覆盖由所述聚合物材料制成的部分的表面的至少一部分的紫外线屏蔽膜，所述紫外线屏蔽膜包括通过气相沉积在待覆盖的部分的表面上形成紫外线屏蔽膜的步骤; 并且在形成紫外线屏蔽膜之前或在成膜步骤的初始阶段，在成膜表面上照射能量在0.05keV至2keV的能量的离子，以使总辐照率达到一定范围从1×10 13离子/ cm 2到5×10 17个离子/ cm 2。

2. 发明授权

US5496772A Method of manufacturing film carrier type substrate 失效
标题翻译：制造薄膜载体型基板的方法
公开(公告)号：US5496772A
公开(公告)日：1996-03-05
申请号：US892380
申请日：1992-06-04
申请人： Akinori Ebe , Kiyoshi Ogata , Satoshi Nishiyama
发明人： Akinori Ebe , Kiyoshi Ogata , Satoshi Nishiyama
IPC分类号： H01L21/48 , H05K1/00 , H05K3/02 , H05K3/38 , H01L21/44
CPC分类号： H05K3/388 , H01L21/4846 , H05K1/0393 , H05K2201/2063 , H05K3/022
摘要： A film carrier type substrate includes a film made of organic high molecular substance, a metal layer formed over the film by depositing metal vapor and irradiating nitrogen gas ions on the film and a mixing layer made of a mixture of the materials of both the metal layer and the film formed in the interface between the metal layer and the film. Prior to forming the metal layer, inert gas ions and/or nitrogen gas ions may be irradiated on the film in advance.
摘要翻译：膜载体型基板包括由有机高分子物质制成的膜，通过沉积金属蒸气并在膜上照射氮气离子在该膜上形成的金属层和由金属层的材料的混合物制成的混合层并且在金属层和膜之间的界面中形成膜。在形成金属层之前，可以预先将惰性气体离子和/或氮气离子照射在膜上。

3. 发明授权

US5316802A Method of forming copper film on substrate 失效
标题翻译：在基材上形成铜膜的方法
公开(公告)号：US5316802A
公开(公告)日：1994-05-31
申请号：US892378
申请日：1992-06-04
申请人： Akinori Ebe , Kiyoshi Ogata , Satoshi Nishiyama , Naoto Kuratani , Taizo Okazaki
发明人： Akinori Ebe , Kiyoshi Ogata , Satoshi Nishiyama , Naoto Kuratani , Taizo Okazaki
IPC分类号： C23C14/20 , C23C14/22 , C30B23/02 , B05D3/06
CPC分类号： C23C14/22 , C23C14/20 , C30B23/002 , C30B23/02 , C30B29/02 , Y10S428/901 , Y10T428/24355 , Y10T428/31678 , Y10T428/31681 , Y10T428/31721
摘要： A copper film coated substrate includes a substrate and a copper film formed on a surface of the substrate. The copper film has an X-ray diffraction intensity of 2.0 cps per unit film thickness at a crystal orientation (111) face of the copper film. A crystal orientation of a copper thin film is controlled by irradiating a surface of a substrate with inert gas ions before forming a copper thin film on the substrate by a physical vapor deposition process. A copper thin film is formed by irradiating a surface of a substrate with ions, and depositing a copper thin film on the irradiated substrate. In the ion irradiating step, an ion irradiation energy for a dosage of the irradiated ions is controlled, so that crystal is greatly grown to be orientated in a direction of copper (111) face with a less dosage of the irradiated ions.
摘要翻译：铜膜被覆基板包括在基板的表面上形成的基板和铜膜。铜膜在铜膜的晶体取向（111）面上的单位膜厚的X射线衍射强度为2.0cps。通过物理气相沉积工艺在衬底上形成铜薄膜之前，用惰性气体离子照射衬底的表面来控制铜薄膜的晶体取向。通过用离子照射衬底的表面并在照射的衬底上沉积铜薄膜来形成铜薄膜。在离子照射步骤中，控制照射离子的用量的离子照射能量，使得以较少量的照射离子在铜（111）面的方向上极大地生长晶体以取向。

4. 发明授权

US06294479B1 Film forming method and apparatus 失效
标题翻译：成膜方法和装置
公开(公告)号：US06294479B1
公开(公告)日：2001-09-25
申请号：US08384597
申请日：1995-02-03
申请人： Akinori Ebe , Satoshi Nishiyama , Kiyoshi Ogata , Yasuo Suzuki
发明人： Akinori Ebe , Satoshi Nishiyama , Kiyoshi Ogata , Yasuo Suzuki
IPC分类号： H01L2131
CPC分类号： C23C14/562 , C23C14/022 , C23C14/027 , C23C14/22
摘要： A method and apparatus for radiation of ions from an ion source 4 onto a surface of an objective substrate T and vacuum evaporation of a predetermined material from an evaporation source 5 onto the surface of the substrate, simultaneously while the substrate is continuously moved. The ion radiation from the ion source 4 is applied to a portion of a region reached by the evaporation material from the evaporation source 5, upstream relative to the direction of movement of the substrate from the center of that region and which is lower in evaporation speed than the center of the region, to thereby continuously form a mixture layer of substrate material atoms and evaporation material atoms on the surface of the substrate and then continuously form a vacuum evaporation film with a predetermined thickness on the mixture layer.
摘要翻译：一种用于将离子源4辐射到目标衬底T的表面上并将预定材料从蒸发源5真空蒸发到衬底表面上的方法和装置，同时衬底被连续移动。来自离子源4的离子辐射被施加到从蒸发源5到达的蒸发材料到达的区域的一部分上，相对于衬底从该区域的中心移动的方向，并且蒸发速度较低从而在基板的表面上连续地形成基板材料原子和蒸发材料原子的混合层，然后在混合层上连续地形成具有预定厚度的真空蒸镀膜。

5. 发明授权

US5501911A Copper crystal film coated organic substrate 失效
标题翻译：铜晶体膜涂有机基材
公开(公告)号：US5501911A
公开(公告)日：1996-03-26
申请号：US65913
申请日：1993-05-25
申请人： Akinori Ebe , Kiyoshi Ogata , Satoshi Nishiyama , Naoto Kuratani , Taizo Okazaki
发明人： Akinori Ebe , Kiyoshi Ogata , Satoshi Nishiyama , Naoto Kuratani , Taizo Okazaki
IPC分类号： C23C14/20 , C23C14/22 , C30B23/02 , B32B15/08 , B32B15/20 , B05D3/06
CPC分类号： C23C14/22 , C23C14/20 , C30B23/002 , C30B23/02 , C30B29/02 , Y10S428/901 , Y10T428/24355 , Y10T428/31678 , Y10T428/31681 , Y10T428/31721
摘要： A copper film coated substrate includes a substrate and a copper film formed on a surface of the substrate. The copper film has an X-ray diffraction intensity of 2.0 cps/nm or more per unit film thickness at a crystal orientation (111) face of the copper film. A crystal orientation of a copper thin film is controlled by irradiating a surface of a substrate with inert gas ions before forming a copper thin film on the substrate by a physical vapor deposition process. A copper thin film is formed by irradiating a surface of a substrate with ions, and depositing a copper thin film on the irradiated substrate. In the ion irradiating step, an ion irradiation energy for a dosage of the irradiated ions is controlled, so that crystal is greatly grown to be orientated in a direction of copper (111) face with a less dosage of the irradiated ions.
摘要翻译：铜膜被覆基板包括在基板的表面上形成的基板和铜膜。铜膜在铜膜的晶体取向（111）面上的单位膜厚的X射线衍射强度为2.0cps / nm以上。通过物理气相沉积工艺在衬底上形成铜薄膜之前，用惰性气体离子照射衬底的表面来控制铜薄膜的晶体取向。通过用离子照射衬底的表面并在照射的衬底上沉积铜薄膜来形成铜薄膜。在离子照射步骤中，控制照射离子的用量的离子照射能量，使得以较少量的照射离子在铜（111）面的方向上极大地生长晶体以取向。

6. 发明授权

US09078336B2 Radio-frequency antenna unit and plasma processing apparatus 有权
标题翻译：射频天线单元和等离子体处理装置
公开(公告)号：US09078336B2
公开(公告)日：2015-07-07
申请号：US12921063
申请日：2009-03-03
申请人： Yuichi Setsuhara , Akinori Ebe
发明人： Yuichi Setsuhara , Akinori Ebe
IPC分类号： H01Q1/36 , H05H1/46 , H01J37/32
CPC分类号： H05H1/46 , H01J37/321 , H01J37/3211
摘要： The present invention aims at providing a radio-frequency antenna unit capable of generating a high-density discharge plasma in a vacuum chamber. The radio-frequency antenna unit according to the present invention includes: a radio-frequency antenna through which a radio-frequency electric current can flow; a protective tube made of an insulator provided around the portion of the radio-frequency antenna that is in the vacuum chamber; and a buffer area provided between the radio-frequency antenna and the protective tube. The “buffer area” refers to an area where an acceleration of electrons is suppressed, and it can be formed, for example, with a vacuum or an insulator. Such a configuration can suppress an occurrence of an electric discharge between the antenna and the protective tube, enabling the generation of a high-density discharge plasma in the vacuum chamber.
摘要翻译：本发明旨在提供一种能够在真空室中产生高密度放电等离子体的射频天线单元。根据本发明的射频天线单元包括：射频电天线可以流过的射频天线; 由位于真空室内的射频天线部分周围设置的保护管，以及设置在射频天线与保护管之间的缓冲区。 “缓冲区”是指抑制电子加速的区域，例如可以用真空或绝缘体形成。这样的结构可以抑制天线与保护管之间的放电的发生，能够在真空室中产生高密度放电等离子体。

7. 发明授权

US08916034B2 Thin-film forming sputtering system 有权
标题翻译：薄膜形成溅射系统
公开(公告)号：US08916034B2
公开(公告)日：2014-12-23
申请号：US13059318
申请日：2009-08-25
申请人： Yuichi Setsuhara , Akinori Ebe , Jeon Geon Han
发明人： Yuichi Setsuhara , Akinori Ebe , Jeon Geon Han
IPC分类号： C23C14/35 , H01J37/34 , H01J37/32 , C23C14/34
CPC分类号： H01J37/3408 , C23C14/3407 , C23C14/358 , H01J37/321 , H01J37/3211 , H01J37/3411 , H01J37/3417
摘要： A thin-film forming sputtering system capable of a sputtering process at a high rate. A thin-film forming sputtering system includes: a vacuum container; a target holder located inside the vacuum container; a target holder located inside the vacuum container; a substrate holder opposed to the target holder; a power source for applying a voltage between the target holder and the substrate holder; a magnetron-sputtering magnet provided behind the target holder, for generating a magnetic field having a component parallel to a target; and radio-frequency antennae for generating radio-frequency inductively-coupled plasma within a space in the vicinity of the target where the magnetic field generated by the magnetron-sputtering magnet has a strength equal to or higher than a predetermined level. The radio-frequency inductively-coupled plasma generated by the radio-frequency antennae promotes the supply of electrons into the aforementioned magnetic field, so that the sputtering process can be performed at a high rate.
摘要翻译：能够高速溅射工艺的薄膜形成溅射系统。薄膜形成溅射系统包括：真空容器; 位于真空容器内的目标支架; 位于真空容器内的目标支架; 与靶保持器相对的衬底保持器; 用于在所述目标保持器和所述基板保持器之间施加电压的电源; 设置在目标支架后面的磁控溅射磁体，用于产生具有平行于目标的分量的磁场; 以及用于在由磁控溅射磁体产生的磁场具有等于或高于预定水平的强度的目标附近的空间内产生射频感应耦合等离子体的射频天线。由射频天线产生的射频感应耦合等离子体促进电子向上述磁场的供给，从而可以高速率进行溅射处理。

8. 发明申请

US20120031562A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20120031562A1
公开(公告)日：2012-02-09
申请号：US13255200
申请日：2010-03-10
申请人： Yuichi Setsuhara , Akinori Ebe
发明人： Yuichi Setsuhara , Akinori Ebe
IPC分类号： C23F1/08
CPC分类号： H01J37/321 , H01J37/3211 , H01J37/32477 , H05H1/46 , H05H2001/4667
摘要： The present invention provides a plasma processing device capable of inducing a strong radio-frequency electric field within a vacuum container while preventing sputtering of the antenna conductor, an increase in the temperature of the antenna conductor and the formation of particles. A plasma processing device according to the present invention includes a vacuum container, a radio-frequency antenna placed between an inner surface and an outer surface of a wall of the vacuum container, and a dielectric separating member for separating the radio-frequency antenna from an internal space of the vacuum container. As compared to a device using an external antenna, the present device can induce a stronger magnetic field in the vacuum container. The separating member has the effects of preventing the radio-frequency antenna from undergoing sputtering by the plasma produced in the vacuum container, suppressing an increase in the temperature of the radio-frequency antenna, and preventing the formation of particles.
摘要翻译：本发明提供一种等离子体处理装置，其能够在防止天线导体的溅射，天线导体的温度升高和颗粒的形成的同时在真空容器内产生强的射频电场。根据本发明的等离子体处理装置包括真空容器，放置在真空容器的壁的内表面和外表面之间的射频天线以及用于将射频天线与真空容器的内部空间。与使用外部天线的装置相比，本装置可以在真空容器中引起更强的磁场。分离部件具有防止射频天线由真空容器内产生的等离子体进行溅射，抑制高频天线的温度上升，防止形成粒子的效果。

9. 发明申请

US20130192759A1 PLASMA PROCESSING DEVICE 审中-公开
标题翻译：等离子体加工装置
公开(公告)号：US20130192759A1
公开(公告)日：2013-08-01
申请号：US13813602
申请日：2011-08-02
申请人： Yuichi Setsuhara , Akinori Ebe
发明人： Yuichi Setsuhara , Akinori Ebe
IPC分类号： H01L21/02 , H01L21/465
CPC分类号： H01L21/02104 , C23C16/24 , C23C16/509 , H01J37/3211 , H01J37/32357 , H01J37/32422 , H01J37/32568 , H01J37/32623 , H01J37/32834 , H01J37/32899 , H01J37/32954 , H01L21/465 , H05H1/46 , H05H2001/4667
摘要： A plasma processing device according to the present invention includes a plasma processing chamber, a plasma producing chamber communicating with the plasma processing chamber, a radio-frequency antenna for producing plasma, a plasma control plate for controlling the energy of electrons in the plasma, as well as an operation rod and a moving mechanism for regulating the position of the plasma control plate. In this plasma processing device, the energy distribution of the electrons of the plasma produced in the plasma producing chamber can be controlled by regulating the distance between the radio-frequency antenna 16 and the plasma control plate by simply moving the operation rod in its longitudinal direction by the moving mechanism. Therefore, a plasma process suitable for the kind of gas molecules to be dissociated and/or their dissociation energy can be easily performed.
摘要翻译：根据本发明的等离子体处理装置包括等离子体处理室，与等离子体处理室连通的等离子体产生室，用于产生等离子体的射频天线，用于控制等离子体中的电子能量的等离子体控制板，如以及用于调节等离子体控制板的位置的操作杆和移动机构。在该等离子体处理装置中，等离子体生成室中产生的等离子体的电子的能量分布可以通过简单地使操作杆沿其纵向移动来调节射频天线16和等离子体控制板之间的距离来控制通过移动机制。因此，可以容易地进行适合于要离解的气体分子种类和/或其解离能的等离子体工艺。

10. 发明申请

US20110080094A1 RADIO-FREQUENCY ANTENNA UNIT AND PLASMA PROCESSING APPARATUS 有权
标题翻译：无线电频率天线单元和等离子体处理设备
公开(公告)号：US20110080094A1
公开(公告)日：2011-04-07
申请号：US12921063
申请日：2009-03-03
申请人： Yuichi Setsuhara , Akinori Ebe
发明人： Yuichi Setsuhara , Akinori Ebe
IPC分类号： H01J7/24
CPC分类号： H05H1/46 , H01J37/321 , H01J37/3211
摘要： The present invention aims at providing a radio-frequency antenna unit capable of generating a high-density discharge plasma in a vacuum chamber. The radio-frequency antenna unit according to the present invention includes: a radio-frequency antenna through which a radio-frequency electric current can flow; a protective tube made of an insulator provided around the portion of the radio-frequency antenna that is in the vacuum chamber; and a buffer area provided between the radio-frequency antenna and the protective tube. The “buffer area” refers to an area where an acceleration of electrons is suppressed, and it can be formed, for example, with a vacuum or an insulator. Such a configuration can suppress an occurrence of an electric discharge between the antenna and the protective tube, enabling the generation of a high-density discharge plasma in the vacuum chamber.
摘要翻译：本发明旨在提供一种能够在真空室中产生高密度放电等离子体的射频天线单元。根据本发明的射频天线单元包括：射频电天线可以流过的射频天线; 由位于真空室内的射频天线部分周围设置的保护管，以及设置在射频天线与保护管之间的缓冲区。 “缓冲区”是指电子加速度被抑制的区域，例如可以用真空或绝缘体形成。这样的结构可以抑制天线与保护管之间的放电的发生，能够在真空室中产生高密度放电等离子体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式