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1. 发明申请

US20130192759A1 PLASMA PROCESSING DEVICE 审中-公开
标题翻译：等离子体加工装置
公开(公告)号：US20130192759A1
公开(公告)日：2013-08-01
申请号：US13813602
申请日：2011-08-02
申请人： Yuichi Setsuhara , Akinori Ebe
发明人： Yuichi Setsuhara , Akinori Ebe
IPC分类号： H01L21/02 , H01L21/465
CPC分类号： H01L21/02104 , C23C16/24 , C23C16/509 , H01J37/3211 , H01J37/32357 , H01J37/32422 , H01J37/32568 , H01J37/32623 , H01J37/32834 , H01J37/32899 , H01J37/32954 , H01L21/465 , H05H1/46 , H05H2001/4667
摘要： A plasma processing device according to the present invention includes a plasma processing chamber, a plasma producing chamber communicating with the plasma processing chamber, a radio-frequency antenna for producing plasma, a plasma control plate for controlling the energy of electrons in the plasma, as well as an operation rod and a moving mechanism for regulating the position of the plasma control plate. In this plasma processing device, the energy distribution of the electrons of the plasma produced in the plasma producing chamber can be controlled by regulating the distance between the radio-frequency antenna 16 and the plasma control plate by simply moving the operation rod in its longitudinal direction by the moving mechanism. Therefore, a plasma process suitable for the kind of gas molecules to be dissociated and/or their dissociation energy can be easily performed.
摘要翻译：根据本发明的等离子体处理装置包括等离子体处理室，与等离子体处理室连通的等离子体产生室，用于产生等离子体的射频天线，用于控制等离子体中的电子能量的等离子体控制板，如以及用于调节等离子体控制板的位置的操作杆和移动机构。在该等离子体处理装置中，等离子体生成室中产生的等离子体的电子的能量分布可以通过简单地使操作杆沿其纵向移动来调节射频天线16和等离子体控制板之间的距离来控制通过移动机制。因此，可以容易地进行适合于要离解的气体分子种类和/或其解离能的等离子体工艺。

2. 发明申请

US20110080094A1 RADIO-FREQUENCY ANTENNA UNIT AND PLASMA PROCESSING APPARATUS 有权
标题翻译：无线电频率天线单元和等离子体处理设备
公开(公告)号：US20110080094A1
公开(公告)日：2011-04-07
申请号：US12921063
申请日：2009-03-03
申请人： Yuichi Setsuhara , Akinori Ebe
发明人： Yuichi Setsuhara , Akinori Ebe
IPC分类号： H01J7/24
CPC分类号： H05H1/46 , H01J37/321 , H01J37/3211
摘要： The present invention aims at providing a radio-frequency antenna unit capable of generating a high-density discharge plasma in a vacuum chamber. The radio-frequency antenna unit according to the present invention includes: a radio-frequency antenna through which a radio-frequency electric current can flow; a protective tube made of an insulator provided around the portion of the radio-frequency antenna that is in the vacuum chamber; and a buffer area provided between the radio-frequency antenna and the protective tube. The “buffer area” refers to an area where an acceleration of electrons is suppressed, and it can be formed, for example, with a vacuum or an insulator. Such a configuration can suppress an occurrence of an electric discharge between the antenna and the protective tube, enabling the generation of a high-density discharge plasma in the vacuum chamber.
摘要翻译：本发明旨在提供一种能够在真空室中产生高密度放电等离子体的射频天线单元。根据本发明的射频天线单元包括：射频电天线可以流过的射频天线; 由位于真空室内的射频天线部分周围设置的保护管，以及设置在射频天线与保护管之间的缓冲区。 “缓冲区”是指电子加速度被抑制的区域，例如可以用真空或绝缘体形成。这样的结构可以抑制天线与保护管之间的放电的发生，能够在真空室中产生高密度放电等离子体。

3. 发明申请

US20070193512A1 Plasma generating method, plasma generating apparatus, and plasma processing apparatus 审中-公开
标题翻译：等离子体产生方法，等离子体产生装置和等离子体处理装置
公开(公告)号：US20070193512A1
公开(公告)日：2007-08-23
申请号：US11707862
申请日：2007-02-20
申请人： Hiroshige Deguchi , Hitoshi Yoneda , Kenji Kato , Akinori Ebe , Yuichi Setsuhara
发明人： Hiroshige Deguchi , Hitoshi Yoneda , Kenji Kato , Akinori Ebe , Yuichi Setsuhara
IPC分类号： C23C16/00
CPC分类号： C23C16/509 , H01J37/32192 , H01J37/3222
摘要： One or more high-frequency antennas is allocated to and disposed in one cubic space C having a side of 0.4 [m] in a plasma generating chamber 1 or in each of plural cubic spaces C, each having a side of 0.4 [m], adjacent ones of the plural cubic spaces being continuous to each other without forming a gap therebetween. The total length L [m] of the high-frequency antennas in each of the cubic spaces C is set in a range which satisfies relationships of (0.2/P)
摘要翻译：在等离子体发生室1中或在具有0.4 [m]侧的多个立方体空间C中的每一个中分配一个或多个高频天线并将其布置在具有0.4 [m]侧的一个立方体C中，多个立体空间中的相邻的空间彼此连续，而不形成间隙。每个立方体空间C中的高频天线的总长度L [m]被设定为满足关于电感耦合等离子体产生（0.2 / P）

4. 发明申请

US20070144672A1 Plasma producing method and apparatus as well as plasma processing apparatus 审中-公开
标题翻译：等离子体制造方法和装置以及等离子体处理装置
公开(公告)号：US20070144672A1
公开(公告)日：2007-06-28
申请号：US11586508
申请日：2006-10-26
申请人： Kenji Kato , Hiroshige Deguchi , Hitoshi Yoneda , Kiyoshi Kubota , Akinori Ebe , Yuichi Setsuhara
发明人： Kenji Kato , Hiroshige Deguchi , Hitoshi Yoneda , Kiyoshi Kubota , Akinori Ebe , Yuichi Setsuhara
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： C23C16/509 , H01J37/321 , H01J37/32183
摘要： Plasma producing method and apparatus as well as plasma processing apparatus including the plasma producing apparatus wherein one or more high-frequency antennas are arranged in a plasma producing chamber, and a high-frequency power is applied to a gas in the chamber from the antenna(s) to produce inductively coupled plasma. Impedance of the high-frequency antenna is set in a range of 45 Ω or lower.
摘要翻译：等离子体制造方法和装置以及包括等离子体制造装置的等离子体处理装置，其中一个或多个高频天线布置在等离子体产生室中，并且高频电力从天线施加到腔室中的气体 s）以产生电感耦合等离子体。高频天线的阻抗设定在45Ω以下的范围内。

5. 发明申请

US20060049138A1 Plasma generation device, plasma control method, and substrate manufacturing method 有权
标题翻译：等离子体发生装置，等离子体控制方法和基板制造方法
公开(公告)号：US20060049138A1
公开(公告)日：2006-03-09
申请号：US10539254
申请日：2003-12-12
申请人： Shoji Miyake , Akinori Ebe , Tatsuo Shoji , Yuichi Setsuhara
发明人： Shoji Miyake , Akinori Ebe , Tatsuo Shoji , Yuichi Setsuhara
IPC分类号： C23F1/00 , C23C16/00 , C03C25/68
CPC分类号： H01J37/321 , H05H1/46 , H05H2001/4667
摘要： The present invention aims to provide a plasma generator capable of creating a spatially uniform distribution of high-density plasma. This object is achieved by the following construction. Multiple antennas 16 are located on the sidewall of a vacuum chamber 11, and a RF power source is connected to three or four antennas 16 in parallel via a plate-shaped conductor 19. The length of the conductor of each antenna 16 is shorter than the quarter wavelength of the induction electromagnetic wave generated within the vacuum chamber. Setting the length of the conductor of the antenna in such a manner prevents the occurrence of a standing wave and thereby maintains the uniformity of the plasma within the vacuum chamber. In addition, the plate-shaped conductor 19 improves the heat-releasing efficiency, which also contributes to the suppression of the impedance.
摘要翻译：本发明的目的在于提供能够产生高密度等离子体的空间均匀分布的等离子体发生器。该目的通过以下结构实现。多个天线16位于真空室11的侧壁上，RF电源通过板状导体19并联连接到三个或四个天线16。每个天线16的导体的长度比真空室内产生的感应电磁波的四分之一波长短。以这种方式设置天线的导体的长度防止驻波的发生，从而保持等离子体在真空室内的均匀性。此外，板状导体19提高散热效率，这也有助于抑制阻抗。

6. 发明授权

US09078336B2 Radio-frequency antenna unit and plasma processing apparatus 有权
标题翻译：射频天线单元和等离子体处理装置
公开(公告)号：US09078336B2
公开(公告)日：2015-07-07
申请号：US12921063
申请日：2009-03-03
申请人： Yuichi Setsuhara , Akinori Ebe
发明人： Yuichi Setsuhara , Akinori Ebe
IPC分类号： H01Q1/36 , H05H1/46 , H01J37/32
CPC分类号： H05H1/46 , H01J37/321 , H01J37/3211
摘要： The present invention aims at providing a radio-frequency antenna unit capable of generating a high-density discharge plasma in a vacuum chamber. The radio-frequency antenna unit according to the present invention includes: a radio-frequency antenna through which a radio-frequency electric current can flow; a protective tube made of an insulator provided around the portion of the radio-frequency antenna that is in the vacuum chamber; and a buffer area provided between the radio-frequency antenna and the protective tube. The “buffer area” refers to an area where an acceleration of electrons is suppressed, and it can be formed, for example, with a vacuum or an insulator. Such a configuration can suppress an occurrence of an electric discharge between the antenna and the protective tube, enabling the generation of a high-density discharge plasma in the vacuum chamber.
摘要翻译：本发明旨在提供一种能够在真空室中产生高密度放电等离子体的射频天线单元。根据本发明的射频天线单元包括：射频电天线可以流过的射频天线; 由位于真空室内的射频天线部分周围设置的保护管，以及设置在射频天线与保护管之间的缓冲区。 “缓冲区”是指抑制电子加速的区域，例如可以用真空或绝缘体形成。这样的结构可以抑制天线与保护管之间的放电的发生，能够在真空室中产生高密度放电等离子体。

7. 发明授权

US08916034B2 Thin-film forming sputtering system 有权
标题翻译：薄膜形成溅射系统
公开(公告)号：US08916034B2
公开(公告)日：2014-12-23
申请号：US13059318
申请日：2009-08-25
申请人： Yuichi Setsuhara , Akinori Ebe , Jeon Geon Han
发明人： Yuichi Setsuhara , Akinori Ebe , Jeon Geon Han
IPC分类号： C23C14/35 , H01J37/34 , H01J37/32 , C23C14/34
CPC分类号： H01J37/3408 , C23C14/3407 , C23C14/358 , H01J37/321 , H01J37/3211 , H01J37/3411 , H01J37/3417
摘要： A thin-film forming sputtering system capable of a sputtering process at a high rate. A thin-film forming sputtering system includes: a vacuum container; a target holder located inside the vacuum container; a target holder located inside the vacuum container; a substrate holder opposed to the target holder; a power source for applying a voltage between the target holder and the substrate holder; a magnetron-sputtering magnet provided behind the target holder, for generating a magnetic field having a component parallel to a target; and radio-frequency antennae for generating radio-frequency inductively-coupled plasma within a space in the vicinity of the target where the magnetic field generated by the magnetron-sputtering magnet has a strength equal to or higher than a predetermined level. The radio-frequency inductively-coupled plasma generated by the radio-frequency antennae promotes the supply of electrons into the aforementioned magnetic field, so that the sputtering process can be performed at a high rate.
摘要翻译：能够高速溅射工艺的薄膜形成溅射系统。薄膜形成溅射系统包括：真空容器; 位于真空容器内的目标支架; 位于真空容器内的目标支架; 与靶保持器相对的衬底保持器; 用于在所述目标保持器和所述基板保持器之间施加电压的电源; 设置在目标支架后面的磁控溅射磁体，用于产生具有平行于目标的分量的磁场; 以及用于在由磁控溅射磁体产生的磁场具有等于或高于预定水平的强度的目标附近的空间内产生射频感应耦合等离子体的射频天线。由射频天线产生的射频感应耦合等离子体促进电子向上述磁场的供给，从而可以高速率进行溅射处理。

8. 发明申请

US20120031562A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20120031562A1
公开(公告)日：2012-02-09
申请号：US13255200
申请日：2010-03-10
申请人： Yuichi Setsuhara , Akinori Ebe
发明人： Yuichi Setsuhara , Akinori Ebe
IPC分类号： C23F1/08
CPC分类号： H01J37/321 , H01J37/3211 , H01J37/32477 , H05H1/46 , H05H2001/4667
摘要： The present invention provides a plasma processing device capable of inducing a strong radio-frequency electric field within a vacuum container while preventing sputtering of the antenna conductor, an increase in the temperature of the antenna conductor and the formation of particles. A plasma processing device according to the present invention includes a vacuum container, a radio-frequency antenna placed between an inner surface and an outer surface of a wall of the vacuum container, and a dielectric separating member for separating the radio-frequency antenna from an internal space of the vacuum container. As compared to a device using an external antenna, the present device can induce a stronger magnetic field in the vacuum container. The separating member has the effects of preventing the radio-frequency antenna from undergoing sputtering by the plasma produced in the vacuum container, suppressing an increase in the temperature of the radio-frequency antenna, and preventing the formation of particles.
摘要翻译：本发明提供一种等离子体处理装置，其能够在防止天线导体的溅射，天线导体的温度升高和颗粒的形成的同时在真空容器内产生强的射频电场。根据本发明的等离子体处理装置包括真空容器，放置在真空容器的壁的内表面和外表面之间的射频天线以及用于将射频天线与真空容器的内部空间。与使用外部天线的装置相比，本装置可以在真空容器中引起更强的磁场。分离部件具有防止射频天线由真空容器内产生的等离子体进行溅射，抑制高频天线的温度上升，防止形成粒子的效果。

9. 发明授权

US5496772A Method of manufacturing film carrier type substrate 失效
标题翻译：制造薄膜载体型基板的方法
公开(公告)号：US5496772A
公开(公告)日：1996-03-05
申请号：US892380
申请日：1992-06-04
申请人： Akinori Ebe , Kiyoshi Ogata , Satoshi Nishiyama
发明人： Akinori Ebe , Kiyoshi Ogata , Satoshi Nishiyama
IPC分类号： H01L21/48 , H05K1/00 , H05K3/02 , H05K3/38 , H01L21/44
CPC分类号： H05K3/388 , H01L21/4846 , H05K1/0393 , H05K2201/2063 , H05K3/022
摘要： A film carrier type substrate includes a film made of organic high molecular substance, a metal layer formed over the film by depositing metal vapor and irradiating nitrogen gas ions on the film and a mixing layer made of a mixture of the materials of both the metal layer and the film formed in the interface between the metal layer and the film. Prior to forming the metal layer, inert gas ions and/or nitrogen gas ions may be irradiated on the film in advance.
摘要翻译：膜载体型基板包括由有机高分子物质制成的膜，通过沉积金属蒸气并在膜上照射氮气离子在该膜上形成的金属层和由金属层的材料的混合物制成的混合层并且在金属层和膜之间的界面中形成膜。在形成金属层之前，可以预先将惰性气体离子和/或氮气离子照射在膜上。

10. 发明申请

US20140216928A1 THIN-FILM FORMATION SPUTTERING DEVICE 审中-公开
标题翻译：薄膜形成溅射装置
公开(公告)号：US20140216928A1
公开(公告)日：2014-08-07
申请号：US14240956
申请日：2011-08-30
申请人： Yuichi Setsuhara , Akinori Ebe
发明人： Yuichi Setsuhara , Akinori Ebe
IPC分类号： H01J37/34
CPC分类号： H01J37/3411 , C23C14/3471 , C23C14/358 , H01J37/321 , H01J37/3211 , H01J37/3408 , H01J37/3417
摘要： A thin-film formation sputtering device capable of forming a high-quality thin film at high rates is provided. A sputtering device includes a target holder provided in a vacuum container, a substrate holder facing the target holder, a means for introducing a plasma generation gas into the vacuum container, a means for generating an electric field for sputtering in a region including a surface of a target, an antenna placement room provided between inner and outer surfaces of a wall of the vacuum container as well as separated from an inner space of the vacuum container by a dielectric window, and a radio-frequency antenna, which is provided in the antenna placement room, for generating a radio-frequency induction electric field in the region including the surface of the target held by the target holder.
摘要翻译：提供能够以高速率形成高质量薄膜的薄膜形成溅射装置。溅射装置包括设置在真空容器中的靶保持器，面向靶保持器的基板保持器，用于将等离子体产生气体引入真空容器的装置，用于在包括表面的区域中产生用于溅射的电场的装置目标，设置在真空容器的壁的内表面和外表面之间以及通过介电窗与真空容器的内部空间分离的天线放置室，以及设置在天线中的射频天线放置室，用于在包括由目标保持器保持的目标表面的区域中产生射频感应电场。

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