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1. 发明申请

US20030159937A1 Method to reduce the depletion of organics in electroplating baths 审中-公开
标题翻译：减少电镀浴中有机物消耗的方法
公开(公告)号：US20030159937A1
公开(公告)日：2003-08-28
申请号：US10085822
申请日：2002-02-27
申请人： Applied Materials, Inc.
发明人： Srinivas Gandikota , Chris R. McGuirk , Deenesh Padhi , Sivakami Ramanathan , Muhammad Atif Malik , Girish A. Dixit
IPC分类号： C25D021/18
CPC分类号： C25D21/14 , C25D21/18
摘要： Embodiments of the invention generally provide an apparatus and method for replenishing organic molecules in an electroplating bath. The replenishment process of the present invention may occur on a real-time basis, and therefore, the concentration of organics minimally varies from desired concentration levels. The replenishment method generally includes conducting pre-processing depletion measurements in order to determine organic depletion rates per current density applied in the electroplating system. Once the organic depletion rates per current density are determined, these depletion rates may be applied to an electroplating processing recipe to calculate the volume of organic depletion per recipe step. The calculated volume of organic depletion per recipe step may then be used to determine the volume of organic molecule replenishment per unit of time that is required per recipe step in order to maintain a desired concentration of organics in the plating solution. The calculated replenishment volume may then be added to the processing recipe so that the replenishment process may occur at real-time during processing periods. The apparatus generally includes a selectively actuated valve in communicaiton with a fluid delivery line, wherein the valve is configured to fluidly isolate a plating cell during a non-processing time period. The valve may be controlled by a system controller, and thus, the fluid level in the cell may be controlled during a non-processing time period.
摘要翻译：本发明的实施方案通常提供用于在电镀浴中补充有机分子的装置和方法。本发明的补充方法可以在实时的基础上进行，因此有机物的浓度最小化从期望的浓度水平变化。补充方法通常包括进行预处理耗尽测量，以便确定在电镀系统中施加的每个电流密度的有机耗尽率。一旦确定了每个电流密度的有机耗尽率，则这些耗尽率可以应用于电镀处理配方以计算每个配方步骤的有机耗尽量。然后可以使用每个配方步骤的计算的有机耗尽体积来确定每个配方步骤所需的每单位时间的有机分子补充体积，以维持电镀溶液中所需的有机物浓度。计算的补充量然后可以被添加到处理配方中，使得补货过程可以在处理时段期间实时发生。该装置通常包括与流体输送管线通信的选择性致动的阀，其中阀被配置为在非处理时间段期间流体地隔离电镀槽。阀可以由系统控制器控制，因此，可以在非处理时间段期间控制单元中的液位。

2. 发明申请

US20030143837A1 Method of depositing a catalytic layer 审中-公开
标题翻译：沉积催化层的方法
公开(公告)号：US20030143837A1
公开(公告)日：2003-07-31
申请号：US10059851
申请日：2002-01-28
申请人： APPLIED MATERIALS, INC.
发明人： Srinivas Gandikota , Chris R. McGuirk , Deenesh Padhi , Muhammad Atif Malik , Sivakami Ramanathan , Girish A. Dixit , Robin Cheung
IPC分类号： H01L021/44 , H01L021/4763
CPC分类号： H01L21/76843 , C23C18/165 , C23C18/1651 , C23C18/1653 , C23C18/1671 , C23C18/1696 , C23C18/1879 , C23C18/38 , C25D5/10 , H01L21/288 , H01L21/2885 , H01L21/76864 , H01L21/76868 , H01L21/76871 , H01L21/76874 , H01L21/76877 , H01L2221/1089
摘要： An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a nullpatchnull of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.
摘要翻译：一种沉积包含至少一种选自贵金属，半贵金属，其合金及其组合的金属的催化剂层的装置和方法，其形成在基板上形成的亚微米特征。贵金属的实例包括钯和铂。半贵金属的实例包括钴，镍和钨。可通过无电沉积，电镀或化学气相沉积来沉积催化层。在一个实施方案中，催化层可以沉积在特征中以用作随后沉积的导电材料的阻挡层。在另一个实施方案中，催化剂层可以沉积在阻挡层上。在另一个实施方案中，催化层可以沉积在沉积在阻挡层上的种子层上，以充当种子层中任何不连续性的“贴片”。一旦沉积了催化层，可以在催化剂层上沉积诸如铜的导电材料。在一个实施例中，导电材料通过无电沉积沉积在催化剂层上。在另一个实施方案中，导电材料通过无电沉积然后电镀或随后进行化学气相沉积沉积在催化剂层上。在另一个实施例中，导电材料通过电镀或化学气相沉积沉积在催化层上。

3. 发明申请

US20040248409A1 Selective metal encapsulation schemes 失效
标题翻译：选择性金属封装方案
公开(公告)号：US20040248409A1
公开(公告)日：2004-12-09
申请号：US10812480
申请日：2004-03-30
申请人： Applied Materials, Inc.
发明人： Deenesh Padhi , Srinivas Gandikota , Mehul Naik , Suketu A. Parikh , Girish A. Dixit
IPC分类号： H01L021/66 , H01L021/4763 , H01L021/44
CPC分类号： H01L21/76849 , H01L21/288 , H01L21/76829 , H01L21/7685 , H01L21/76885
摘要： A method and system of processing a semiconductor substrate includes, in one or more embodiments, depositing a protective layer on the substrate surface comprising a conductive element disposed in a dielectric material; processing the protective layer to expose the conductive element; electrolessly depositing a metallic passivating layer onto the conductive element; and removing at least a portion of the protective layer from the substrate after electroless deposition. In another aspect, a method and system of processing a semiconductor includes depositing a metallic passivating layer onto a substrate surface comprising a conductive element, masking the passivating layer to protect the underlying conductive element of the substrate surface, removing the unmasked passivating layer, and removing the mask from the passivating layer.
摘要翻译：在一个或多个实施例中，处理半导体衬底的方法和系统包括在衬底表面上沉积保护层，所述保护层包括布置在电介质材料中的导电元件; 处理所述保护层以暴露所述导电元件; 将金属钝化层无电沉积到导电元件上; 以及在无电沉积之后从衬底去除保护层的至少一部分。在另一方面，一种处理半导体的方法和系统包括在包括导电元件的衬底表面上沉积金属钝化层，掩蔽钝化层以保护衬底表面的下面的导电元件，去除未屏蔽的钝化层，以及去除掩模从钝化层。

4. 发明申请

US20040087141A1 Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application 失效
公开(公告)号：US20040087141A1
公开(公告)日：2004-05-06
申请号：US10284855
申请日：2002-10-30
申请人： Applied Materials, Inc.
发明人： Sivakami Ramanathan , Deenesh Padhi , Srinivas Gandikota , Girish A. Dixit
IPC分类号： H01L021/44 , H01L021/302 , H01L021/461
CPC分类号： H01L21/76877 , C23C18/166 , C23C18/1831 , C23C18/1834 , C23C18/1879 , C23C18/1882 , C23C18/34 , C23C18/36 , C23C18/44 , C23C18/50 , C23G1/10 , H01L21/288 , H01L21/76814 , H01L21/76849 , H01L21/76865 , H01L21/76873 , H01L21/76874 , H01L21/76883
摘要： A method for depositing a passivation layer on a substrate surface using one or more electroplating techniques is provided. Embodiments of the method include selectively depositing an initiation layer on a conductive material by exposing the substrate surface to a first electroless solution, depositing a passivating material on the initiation layer by exposing the initiation layer to a second electroless solution, and cleaning the substrate surface with an acidic solution. In another aspect, the method includes applying ultrasonic or megasonic energy to the substrate surface during the application of the acidic solution. In still another aspect, the method includes using the acidic solution to remove between about 100 null and about 200 null of the passivating material. In yet another aspect, the method includes cleaning the substrate surface with a first acidic solution prior to the deposition of the initiation layer.

5. 发明申请

US20030140988A1 Electroless deposition method over sub-micron apertures 有权
标题翻译：亚微米孔径上的无电沉积方法
公开(公告)号：US20030140988A1
公开(公告)日：2003-07-31
申请号：US10059822
申请日：2002-01-28
申请人： APPLIED MATERIALS, INC.
发明人： Srinivas Gandikota , Chris R. McGuirk , Deenesh Padhi , Muhammad Atif Malik , Sivakami Ramanathan , Girish A. Dixit , Robin Cheung
IPC分类号： C22F001/00
CPC分类号： H01L21/76843 , C23C18/1651 , C23C18/1653 , C23C18/1696 , C23C18/1831 , C23C18/28 , C23C18/30 , C23C18/38 , H01L21/288 , H01L21/2885 , H01L21/6708 , H01L21/76864 , H01L21/76868 , H01L21/76871 , H01L21/76874 , H01L21/76877 , H01L2221/1089 , Y10S428/936
摘要： An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a nullpatchnull of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.
摘要翻译：一种沉积包含至少一种选自贵金属，半贵金属，其合金及其组合的金属的催化剂层的装置和方法，其形成在基板上形成的亚微米特征。贵金属的实例包括钯和铂。半贵金属的实例包括钴，镍和钨。可通过无电沉积，电镀或化学气相沉积来沉积催化层。在一个实施方案中，催化层可以沉积在特征中以用作随后沉积的导电材料的阻挡层。在另一个实施方案中，催化剂层可以沉积在阻挡层上。在另一个实施方案中，催化层可以沉积在沉积在阻挡层上的种子层上，以充当种子层中任何不连续性的“贴片”。一旦沉积了催化层，可以在催化剂层上沉积诸如铜的导电材料。在一个实施例中，导电材料通过无电沉积沉积在催化剂层上。在另一个实施方案中，导电材料通过无电沉积然后电镀或随后进行化学气相沉积沉积在催化剂层上。在另一个实施例中，导电材料通过电镀或化学气相沉积沉积在催化层上。

6. 发明申请

US20030155255A1 Electropolishing of metallic interconnects 失效
标题翻译：电抛光金属互连
公开(公告)号：US20030155255A1
公开(公告)日：2003-08-21
申请号：US10188163
申请日：2002-07-01
申请人： Applied Materials, Inc.
发明人： Joseph Yahalom , Deenesh Padhi , Srinivas Gandikota , Girish A. Dixit
IPC分类号： B23H003/00
CPC分类号： C25F3/16 , C25F3/22
摘要： Embodiments of the present invention generally relate to a method and apparatus for planarizing a substrate by electropolishing techniques. Certain embodiments of an electropolishing apparatus include a contact ring adapted to support a substrate, a cell body adapted to hold an electropolishing solution, a fluid supply system adapted to provide the electropolishing solution to the cell body, a cathode disposed within the cell body, a power supply system in electrical communication with the contact ring and the cathode, and a controller coupled to at least the fluid supply system and the power supply system. The controller may be adapted to provide a first set of electropolishing conditions to form a boundary layer between the substrate and the electropolishing solution to an initial thickness and may be adapted to provide a second set of electropolishing conditions to control the boundary layer to a subsequent thickness less than or equal to the initial thickness.
摘要翻译：本发明的实施例一般涉及通过电抛光技术来平坦化衬底的方法和装置。电抛光装置的某些实施例包括适于支撑基底的接触环，适于保持电解抛光溶液的电池体，适于将电解抛光溶液提供给电池体的流体供应系统，设置在电池体内的阴极，电源系统与接触环和阴极电连通，以及控制器，耦合到至少流体供应系统和电源系统。控制器可以适于提供第一组电抛光条件，以在衬底和电解抛光溶液之间形成初始厚度的边界层，并且可适于提供第二组电抛光条件以将边界层控制到随后的厚度小于或等于初始厚度。

7. 发明申请

US20030029726A1 Apparatus and method of evaluating electroplating solutions and conditions 审中-公开
标题翻译：评估电镀溶液和条件的设备和方法
公开(公告)号：US20030029726A1
公开(公告)日：2003-02-13
申请号：US09924080
申请日：2001-08-07
申请人： Applied Materials, Inc.
发明人： Nicolay Kovarsky , Zhi-Wen Sun , Girish A. Dixit
IPC分类号： C25D021/12 , C25D005/00 , C25D017/00
CPC分类号： C25D21/12
摘要： The present invention generally relates to an apparatus and method of evaluating electroplating solutions and conditions. In one embodiment, the method of evaluating electroplating solutions comprises utilizing an electrochemical measuring cell having a working electrode having a lid with at least one hole, a counter electrode, and a reference electrode. The working electrode, the counter electrode, and the reference electrode are immersed in at least one sample of at least one electroplating solution. The lid is disposed over the working electrode forming a chamber between the working electrode and the lid. The lid further has a hole to allow an electroplating solution to flow into the chamber and reach the working electrode. The potential of the working electrode in the sample of the electroplating solution is measured over time with a constant current supplied to the working electrode. The electrochemical measurements may be used to determine which solutions are capable of bottom-up filling and may be used to estimate the optimal electroplating parameters. In still another embodiment, the present invention relates to an apparatus for electroplating a substrate comprises a chamber body, an anode disposed in the chamber body, a contact ring disposed in the chamber body, one or more power supplies coupled to the anode and the contact ring, and an electrochemical measuring cell disposed in the chamber body or coupled to an electrolyte output coupled to the chamber body.
摘要翻译：本发明一般涉及一种评估电镀溶液和条件的设备和方法。在一个实施例中，电镀溶液的评估方法包括利用电化学测量单元，该电化学测量单元具有具有至少一个孔的盖的工作电极，对电极和参比电极。工作电极，对电极和参比电极浸入至少一个电镀溶液的至少一个样品中。盖子设置在工作电极之上，在工作电极和盖子之间形成一个室。盖子还具有孔，以允许电镀溶液流入室并到达工作电极。在供给工作电极的恒定电流下，随时间测量电镀液样品中的工作电极的电位。电化学测量可用于确定哪些溶液能够自下而上填充，并可用于估计最佳电镀参数。在另一个实施例中，本发明涉及一种用于电镀基板的设备，包括室主体，设置在室主体中的阳极，设置在室主体中的接触环，耦合到阳极和接触件的一个或多个电源环和电化学测量单元，其设置在室主体中或耦合到耦合到室主体的电解质输出。

8. 发明申请

US20040074777A1 Method for removing electrolyte from electrical contacts and wafer touching areas 失效
标题翻译：从电触点和晶片接触区域去除电解质的方法
公开(公告)号：US20040074777A1
公开(公告)日：2004-04-22
申请号：US10273539
申请日：2002-10-18
申请人： Applied Materials, Inc.
发明人： Dmitry Lubomirsky , Michael X. Yang , Girish A. Dixit , Vincent E. Burkhart , Allen L. D'Ambra , Yeuk-Fai Edwin Mok , Harald Herchen
IPC分类号： C25D005/48
CPC分类号： C25D7/12 , C25D21/00 , H01L21/2885
摘要： A method for cleaning the electrical contact areas or substrate contact areas of an electrochemical plating contact ring is provided. Embodiments of the method include positioning a substrate on a substrate support member having one or more electrical contacts, chemically plating a metal layer on at least a portion of a surface of the substrate, removing the processed substrate from the support member, and cleaning the one or more electrical contacts with a vapor mixture comprising an alcohol. In another aspect, the method includes spraying the vapor mixture on the electrical contacts while rotating the substrate support member.
摘要翻译：提供了一种用于清洁电化学电镀接触环的电接触区域或衬底接触区域的方法。该方法的实施例包括将基板定位在具有一个或多个电触点的基板支撑构件上，在基板表面的至少一部分上化学镀覆金属层，从处理基板移除经处理的基板，并清洁该基板或更多的与包含醇的蒸汽混合物的电接触。在另一方面，该方法包括在旋转衬底支撑构件的同时将蒸气混合物喷射到电触点上。

9. 发明申请

US20030159936A1 Method and apparatus for reducing organic depletion during non-processing time periods 失效
标题翻译：在非处理时间段内减少有机物耗尽的方法和装置
公开(公告)号：US20030159936A1
公开(公告)日：2003-08-28
申请号：US10085338
申请日：2002-02-27
申请人： Applied Materials, Inc.
发明人： Srinivas Gandikota , Chris R. McGuirk , Deenesh Padhi , Sivakami Ramanathan , Muhammad Atif Malik , Girish A. Dixit
IPC分类号： C25D021/06 , C25D021/16 , C25D017/00
CPC分类号： C25D21/18 , C25D21/14
摘要： Embodiments of the invention generally provide an apparatus and method for replenishing organic molecules in an electroplating bath. The replenishment process of the present invention may occur on a real-time basis, and therefore, the concentration of organics minimally varies from desired concentration levels. The replenishment method generally includes conducting pre-processing depletion measurements in order to determine organic depletion rates per current density applied in the electroplating system. Once the organic depletion rates per current density are determined, these depletion rates may be applied to an electroplating processing recipe to calculate the volume of organic depletion per recipe step. The calculated volume of organic depletion per recipe step may then be used to determine the volume of organic molecule replenishment per unit of time that is required per recipe step in order to maintain a desired concentration of organics in the plating solution. The calculated replenishment volume may then be added to the processing recipe so that the replenishment process may occur at real-time during processing periods. The apparatus generally includes a selectively actuated valve in communicaiton with a fluid delivery line, wherein the valve is configured to fluidly isolate a plating cell during a non-processing time period. The valve may be controlled by a system controller, and thus, the fluid level in the cell may be controlled during a non-processing time period.
摘要翻译：本发明的实施方案通常提供用于在电镀浴中补充有机分子的装置和方法。本发明的补充方法可以在实时的基础上进行，因此有机物的浓度最小化从期望的浓度水平变化。补充方法通常包括进行预处理耗尽测量，以便确定在电镀系统中施加的每个电流密度的有机耗尽率。一旦确定了每个电流密度的有机耗尽率，则这些耗尽率可以应用于电镀处理配方以计算每个配方步骤的有机耗尽量。然后可以使用每个配方步骤的计算的有机耗尽体积来确定每个配方步骤所需的每单位时间的有机分子补充体积，以维持电镀溶液中所需的有机物浓度。计算的补充量然后可以被添加到处理配方中，使得补货过程可以在处理时段期间实时发生。该装置通常包括与流体输送管线通信的选择性致动的阀，其中阀被配置为在非处理时间段期间流体地隔离电镀槽。阀可以由系统控制器控制，因此，可以在非处理时间段期间控制单元中的液位。

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