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1. 发明申请

US20030155255A1 Electropolishing of metallic interconnects 失效
标题翻译：电抛光金属互连
公开(公告)号：US20030155255A1
公开(公告)日：2003-08-21
申请号：US10188163
申请日：2002-07-01
申请人： Applied Materials, Inc.
发明人： Joseph Yahalom , Deenesh Padhi , Srinivas Gandikota , Girish A. Dixit
IPC分类号： B23H003/00
CPC分类号： C25F3/16 , C25F3/22
摘要： Embodiments of the present invention generally relate to a method and apparatus for planarizing a substrate by electropolishing techniques. Certain embodiments of an electropolishing apparatus include a contact ring adapted to support a substrate, a cell body adapted to hold an electropolishing solution, a fluid supply system adapted to provide the electropolishing solution to the cell body, a cathode disposed within the cell body, a power supply system in electrical communication with the contact ring and the cathode, and a controller coupled to at least the fluid supply system and the power supply system. The controller may be adapted to provide a first set of electropolishing conditions to form a boundary layer between the substrate and the electropolishing solution to an initial thickness and may be adapted to provide a second set of electropolishing conditions to control the boundary layer to a subsequent thickness less than or equal to the initial thickness.
摘要翻译：本发明的实施例一般涉及通过电抛光技术来平坦化衬底的方法和装置。电抛光装置的某些实施例包括适于支撑基底的接触环，适于保持电解抛光溶液的电池体，适于将电解抛光溶液提供给电池体的流体供应系统，设置在电池体内的阴极，电源系统与接触环和阴极电连通，以及控制器，耦合到至少流体供应系统和电源系统。控制器可以适于提供第一组电抛光条件，以在衬底和电解抛光溶液之间形成初始厚度的边界层，并且可适于提供第二组电抛光条件以将边界层控制到随后的厚度小于或等于初始厚度。

2. 发明申请

US20030127334A1 Method for determining a concentration of conductive species in an aqueous system 审中-公开
标题翻译：确定含水体系中导电物质浓度的方法
公开(公告)号：US20030127334A1
公开(公告)日：2003-07-10
申请号：US10043701
申请日：2002-01-08
申请人： Applied Materials, Inc.
发明人： Deenesh Padhi , Srinivas Gandikota , Chris McGuirk , Girish Dixit
IPC分类号： C25D005/00
CPC分类号： C25D21/14
摘要： A method of measuring a concentration of conductive species in an aqueous system is disclosed. In one embodiment, the method comprises providing an electrochemical cell wherein the electrochemical cell has a cell resistance that varies with a concentration of conductive species and determining a relationship between the cell resistance of the electrochemical cell and the concentration of conductive species. The method further comprises measuring one or more electrochemical parameters of the electrochemical cell and determining a test concentration of conductive species based upon the one or more measured electrochemical parameters. Also disclosed is a system for electroplating a material layer on a substrate. The system comprises an electroplating apparatus for electroplating a material layer on a substrate, an electrochemical sensing device capable of measuring a cell resistance of the electroplating bath and one or more material storage reservoirs capable of delivering one or more materials to the electrochemical plating bath.
摘要翻译：公开了一种测量水性体系中导电物质浓度的方法。在一个实施方案中，该方法包括提供电化学电池，其中电化学电池具有随着导电种类的浓度而变化的电池电阻，并且确定电化学电池的电池电阻与导电种类的浓度之间的关系。该方法还包括测量电化学电池的一个或多个电化学参数，并基于一个或多个测量的电化学参数确定导电物质的测试浓度。还公开了一种用于在基板上电镀材料层的系统。该系统包括用于电镀基材上的材料层的电镀设备，能够测量电镀槽的电池电阻的电化学感测装置和能够将一种或多种材料输送到电化学镀浴的一个或多个材料储存容器。

3. 发明申请

US20030140988A1 Electroless deposition method over sub-micron apertures 有权
标题翻译：亚微米孔径上的无电沉积方法
公开(公告)号：US20030140988A1
公开(公告)日：2003-07-31
申请号：US10059822
申请日：2002-01-28
申请人： APPLIED MATERIALS, INC.
发明人： Srinivas Gandikota , Chris R. McGuirk , Deenesh Padhi , Muhammad Atif Malik , Sivakami Ramanathan , Girish A. Dixit , Robin Cheung
IPC分类号： C22F001/00
CPC分类号： H01L21/76843 , C23C18/1651 , C23C18/1653 , C23C18/1696 , C23C18/1831 , C23C18/28 , C23C18/30 , C23C18/38 , H01L21/288 , H01L21/2885 , H01L21/6708 , H01L21/76864 , H01L21/76868 , H01L21/76871 , H01L21/76874 , H01L21/76877 , H01L2221/1089 , Y10S428/936
摘要： An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a nullpatchnull of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.
摘要翻译：一种沉积包含至少一种选自贵金属，半贵金属，其合金及其组合的金属的催化剂层的装置和方法，其形成在基板上形成的亚微米特征。贵金属的实例包括钯和铂。半贵金属的实例包括钴，镍和钨。可通过无电沉积，电镀或化学气相沉积来沉积催化层。在一个实施方案中，催化层可以沉积在特征中以用作随后沉积的导电材料的阻挡层。在另一个实施方案中，催化剂层可以沉积在阻挡层上。在另一个实施方案中，催化层可以沉积在沉积在阻挡层上的种子层上，以充当种子层中任何不连续性的“贴片”。一旦沉积了催化层，可以在催化剂层上沉积诸如铜的导电材料。在一个实施例中，导电材料通过无电沉积沉积在催化剂层上。在另一个实施方案中，导电材料通过无电沉积然后电镀或随后进行化学气相沉积沉积在催化剂层上。在另一个实施例中，导电材料通过电镀或化学气相沉积沉积在催化层上。

4. 发明申请

US20030209523A1 Planarization by chemical polishing for ULSI applications 审中-公开
标题翻译：通过ULSI应用的化学抛光进行平面化
公开(公告)号：US20030209523A1
公开(公告)日：2003-11-13
申请号：US10143401
申请日：2002-05-09
申请人： Applied Materials, Inc.
发明人： Deenesh Padhi , Srinivas Gandikota , Chunping Long , Sivakami Ramanathan , Chris R. McGuirk , Girish Dixit , Muhammad Atif Malik
IPC分类号： C03C025/68 , C23F001/00
CPC分类号： H01L21/68728 , B24B1/04 , B24B37/04 , B24B51/00 , B24B57/02 , C23F3/06 , H01L21/2885 , H01L21/32115 , H01L21/32134 , H01L21/67051 , H01L21/68792
摘要： Methods, compositions, and apparatus are provided for planarizing conductive materials disposed on a substrate surface by an chemical polishing technique. In one aspect, a substrate having conductive material disposed thereon is disposed on a substrate support and exposed to a composition containing an oxidizing agent and an inorganic etchant. The substrate is planarized by the composition without the presence of mechanical abrasion. The substrate may optionally be rotated, agitated, or both during exposure to the composition. The method removes conductive materials forming protuberances on the substrate surface at a higher rate than conductive materials forming recesses on the substrate surface.
摘要翻译：提供了通过化学抛光技术平面化设置在基板表面上的导电材料的方法，组合物和装置。在一个方面，其上设置有导电材料的基板设置在基板支撑件上并暴露于含有氧化剂和无机蚀刻剂的组合物。基体被组合物平坦化，而不存在机械磨损。在暴露于组合物期间，可任选地将基材旋转，搅拌或两者。该方法以比在衬底表面上形成凹槽的导电材料更高的速率移除在衬底表面上形成突起的导电材料。

5. 发明申请

US20030159936A1 Method and apparatus for reducing organic depletion during non-processing time periods 失效
标题翻译：在非处理时间段内减少有机物耗尽的方法和装置
公开(公告)号：US20030159936A1
公开(公告)日：2003-08-28
申请号：US10085338
申请日：2002-02-27
申请人： Applied Materials, Inc.
发明人： Srinivas Gandikota , Chris R. McGuirk , Deenesh Padhi , Sivakami Ramanathan , Muhammad Atif Malik , Girish A. Dixit
IPC分类号： C25D021/06 , C25D021/16 , C25D017/00
CPC分类号： C25D21/18 , C25D21/14
摘要： Embodiments of the invention generally provide an apparatus and method for replenishing organic molecules in an electroplating bath. The replenishment process of the present invention may occur on a real-time basis, and therefore, the concentration of organics minimally varies from desired concentration levels. The replenishment method generally includes conducting pre-processing depletion measurements in order to determine organic depletion rates per current density applied in the electroplating system. Once the organic depletion rates per current density are determined, these depletion rates may be applied to an electroplating processing recipe to calculate the volume of organic depletion per recipe step. The calculated volume of organic depletion per recipe step may then be used to determine the volume of organic molecule replenishment per unit of time that is required per recipe step in order to maintain a desired concentration of organics in the plating solution. The calculated replenishment volume may then be added to the processing recipe so that the replenishment process may occur at real-time during processing periods. The apparatus generally includes a selectively actuated valve in communicaiton with a fluid delivery line, wherein the valve is configured to fluidly isolate a plating cell during a non-processing time period. The valve may be controlled by a system controller, and thus, the fluid level in the cell may be controlled during a non-processing time period.
摘要翻译：本发明的实施方案通常提供用于在电镀浴中补充有机分子的装置和方法。本发明的补充方法可以在实时的基础上进行，因此有机物的浓度最小化从期望的浓度水平变化。补充方法通常包括进行预处理耗尽测量，以便确定在电镀系统中施加的每个电流密度的有机耗尽率。一旦确定了每个电流密度的有机耗尽率，则这些耗尽率可以应用于电镀处理配方以计算每个配方步骤的有机耗尽量。然后可以使用每个配方步骤的计算的有机耗尽体积来确定每个配方步骤所需的每单位时间的有机分子补充体积，以维持电镀溶液中所需的有机物浓度。计算的补充量然后可以被添加到处理配方中，使得补货过程可以在处理时段期间实时发生。该装置通常包括与流体输送管线通信的选择性致动的阀，其中阀被配置为在非处理时间段期间流体地隔离电镀槽。阀可以由系统控制器控制，因此，可以在非处理时间段期间控制单元中的液位。

6. 发明申请

US20030146102A1 Method for forming copper interconnects 审中-公开
标题翻译：形成铜互连的方法
公开(公告)号：US20030146102A1
公开(公告)日：2003-08-07
申请号：US10358561
申请日：2003-02-05
申请人： Applied Materials, Inc.
发明人： Sivakami Ramanathan , Srinivas Gandikota , Deenesh Padhi , Chris McGuirk , Girish Dixit , Robin Cheung
IPC分类号： C25D003/38 , C25D007/04
CPC分类号： C25D7/123 , C25D3/38 , H01L21/2885 , H01L21/76877 , Y10T428/12431
摘要： Embodiments of the invention provide a method of plating a copper film on a substrate in an electrochemical plating apparatus. The method includes positioning a substrate in an electrolyte solution, applying a current between the substrate and an anode to generate a current density of between about 10 mA/cm2 and about 40 mA/cm2 on the substrate surface, rotating the, substrate at a rotational speed of between about 20 rpm and about 50 rpm, and plating a copper film having a sheet resistance of less than about 16.5null10null2 Ohms/cm2. Embodiments of the invention further provide a copper film plated onto a semiconductor substrate, wherein the film has improved electromigration and stress characteristics
摘要翻译：本发明的实施例提供了一种在电化学电镀装置中在基板上镀覆铜膜的方法。该方法包括将基板定位在电解质溶液中，在基板和阳极之间施加电流，以在基板表面上产生约10mA / cm 2至约40mA / cm 2之间的电流密度，旋转基板速度为约20rpm至约50rpm，并且电镀具有小于约16.5×10-2欧姆/ cm 2的薄层电阻的铜膜。本发明的实施例还提供了镀在半导体衬底上的铜膜，其中该膜具有改善的电迁移和应力特性

7. 发明申请

US20030024826A1 Electro-chemical polishing apparatus 有权
标题翻译：电化学抛光装置
公开(公告)号：US20030024826A1
公开(公告)日：2003-02-06
申请号：US09920704
申请日：2001-08-01
申请人： Applied Materials, Inc.
发明人： Joseph Yahalom , Srinivas Gandikota , Christopher R. McGuirk , Deenesh Padhi
IPC分类号： B23H003/00 , C25F003/00 , C25F007/00 , H05K003/07 , B23H005/00 , B23H007/00 , B23H009/00 , B23H011/00 , H01L021/00
CPC分类号： C25F7/00 , H01L21/6708
摘要： Generally, a method and apparatus for electrochemical polishing a metal layer disposed on a substrate is provided. In one embodiment, the electrochemical polishing apparatus generally includes a substrate support having a plurality of contact members, a cathode and at least one nozzle. The nozzle is adapted to centrally dispose a polishing fluid on the substrate supported by the substrate support. The cathode is adapted to couple the polishing fluid to a negative terminal of a power source. A positive terminal of the power source is electrically coupled through the contact members to the conductive layer of the substrate. The nozzle creates a turbulent flow in the portion of the polishing fluid boundary layer proximate the center of the substrate which enhances the polishing rate at the center of the substrate.
摘要翻译：通常，提供了一种用于电化学抛光设置在基底上的金属层的方法和装置。在一个实施例中，电化学抛光装置通常包括具有多个接触构件，阴极和至少一个喷嘴的衬底支撑件。喷嘴适于将抛光流体集中设置在由基板支撑件支撑的基板上。阴极适于将抛光流体耦合到电源的负极端子。电源的正端子通过接触构件电耦合到衬底的导电层。喷嘴在抛光液边界层的靠近基板中心的部分产生湍流，这增强了基板中心处的抛光速率。

8. 发明申请

US20040248409A1 Selective metal encapsulation schemes 失效
标题翻译：选择性金属封装方案
公开(公告)号：US20040248409A1
公开(公告)日：2004-12-09
申请号：US10812480
申请日：2004-03-30
申请人： Applied Materials, Inc.
发明人： Deenesh Padhi , Srinivas Gandikota , Mehul Naik , Suketu A. Parikh , Girish A. Dixit
IPC分类号： H01L021/66 , H01L021/4763 , H01L021/44
CPC分类号： H01L21/76849 , H01L21/288 , H01L21/76829 , H01L21/7685 , H01L21/76885
摘要： A method and system of processing a semiconductor substrate includes, in one or more embodiments, depositing a protective layer on the substrate surface comprising a conductive element disposed in a dielectric material; processing the protective layer to expose the conductive element; electrolessly depositing a metallic passivating layer onto the conductive element; and removing at least a portion of the protective layer from the substrate after electroless deposition. In another aspect, a method and system of processing a semiconductor includes depositing a metallic passivating layer onto a substrate surface comprising a conductive element, masking the passivating layer to protect the underlying conductive element of the substrate surface, removing the unmasked passivating layer, and removing the mask from the passivating layer.
摘要翻译：在一个或多个实施例中，处理半导体衬底的方法和系统包括在衬底表面上沉积保护层，所述保护层包括布置在电介质材料中的导电元件; 处理所述保护层以暴露所述导电元件; 将金属钝化层无电沉积到导电元件上; 以及在无电沉积之后从衬底去除保护层的至少一部分。在另一方面，一种处理半导体的方法和系统包括在包括导电元件的衬底表面上沉积金属钝化层，掩蔽钝化层以保护衬底表面的下面的导电元件，去除未屏蔽的钝化层，以及去除掩模从钝化层。

9. 发明申请

US20040118699A1 Homogeneous copper-palladium alloy plating for enhancement of electro-migration resistance in interconnects 审中-公开
标题翻译：均匀的铜 - 钯合金电镀，用于增强互连中的电迁移电阻
公开(公告)号：US20040118699A1
公开(公告)日：2004-06-24
申请号：US10678003
申请日：2003-10-02
申请人： Applied Materials, Inc.
发明人： Deenesh Padhi , Srinivas Gandikota , Girish Dixit
IPC分类号： C25D003/56 , C25D017/00
CPC分类号： C25D5/18 , C25D3/58 , C25D7/123 , H01L21/2885
摘要： A method for plating a homogenous copper-palladium alloy. The method includes providing a plating solution to an electrochemical plating cell. The plating solution includes a copper ion source at a concentration of between about 0.1 M and about 1.0 M and a palladium ion source at a concentration of between about 0.0005 M and about 0.1 M. The method further includes supplying an electrical deposition bias to a plating surface. The electrical deposition bias is configured to simultaneously deposit copper ions and palladium ions onto the plating surface.
摘要翻译：电镀均匀的铜 - 钯合金的方法。该方法包括向电化学电镀单元提供电镀液。电镀溶液包括浓度在约0.1M和约1.0M之间的铜离子源和浓度在约0.0005M和约0.1M之间的钯离子源。该方法还包括向电镀提供电沉积偏压表面。电沉积偏压被配置为将铜离子和钯离子同时沉积到电镀表面上。

10. 发明申请

US20040087141A1 Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application 失效
公开(公告)号：US20040087141A1
公开(公告)日：2004-05-06
申请号：US10284855
申请日：2002-10-30
申请人： Applied Materials, Inc.
发明人： Sivakami Ramanathan , Deenesh Padhi , Srinivas Gandikota , Girish A. Dixit
IPC分类号： H01L021/44 , H01L021/302 , H01L021/461
CPC分类号： H01L21/76877 , C23C18/166 , C23C18/1831 , C23C18/1834 , C23C18/1879 , C23C18/1882 , C23C18/34 , C23C18/36 , C23C18/44 , C23C18/50 , C23G1/10 , H01L21/288 , H01L21/76814 , H01L21/76849 , H01L21/76865 , H01L21/76873 , H01L21/76874 , H01L21/76883
摘要： A method for depositing a passivation layer on a substrate surface using one or more electroplating techniques is provided. Embodiments of the method include selectively depositing an initiation layer on a conductive material by exposing the substrate surface to a first electroless solution, depositing a passivating material on the initiation layer by exposing the initiation layer to a second electroless solution, and cleaning the substrate surface with an acidic solution. In another aspect, the method includes applying ultrasonic or megasonic energy to the substrate surface during the application of the acidic solution. In still another aspect, the method includes using the acidic solution to remove between about 100 null and about 200 null of the passivating material. In yet another aspect, the method includes cleaning the substrate surface with a first acidic solution prior to the deposition of the initiation layer.

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