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    • 4. 发明授权
    • Method, system and program for evaluating reliability on component
    • 用于评估组件可靠性的方法,系统和程序
    • US07437269B2
    • 2008-10-14
    • US11392693
    • 2006-03-30
    • Noriyasu NinagawaNoriaki YamamotoYuzo Hiroshige
    • Noriyasu NinagawaNoriaki YamamotoYuzo Hiroshige
    • G06F11/30G06F19/00G21C17/00
    • G06F17/50
    • The present invention provides a system which is capable of supporting a designer in confirming constituent information of a component at early stages of design. The system has a functional configuration, in which constituents contained in a target component and a content of each of the constituents are calculated referring to a constituent information table based on identification information of the target component. Conformity of the constituent to environmental regulations is evaluated based on the content. A component similar to the target component is extracted referring to an environmental qualification information table to calculate constituents contained in the similar component and a content of each of the constituents; and credibility of evaluation of the conformity to environmental regulations is evaluated based on a difference between the content of the constituent in the target component and the content of the constituent in the similar component.
    • 本发明提供一种系统,其能够支持设计者在设计的早期阶段确认组件的构成信息。 系统具有功能配置,其中,基于目标组件的识别信息,参考构成信息表来计算包含在目标组件中的组成部分和每个组成部分的内容。 根据内容对成分与环境法规的一致性进行评估。 提取与目标成分相似的成分,参照环境资格信息表,计算出相似成分中含有的成分和各成分的含量; 基于目标成分中的成分的含量与相似成分的成分的含量之间的差异来评价对环境规定的一致性的评价的可信度。
    • 7. 发明授权
    • Process for etching
    • 蚀刻工艺
    • US5110408A
    • 1992-05-05
    • US658254
    • 1991-02-20
    • Takashi FujiiHironobu KawaharaKazuo TakataMasaharu NishiumiNoriaki Yamamoto
    • Takashi FujiiHironobu KawaharaKazuo TakataMasaharu NishiumiNoriaki Yamamoto
    • H01L21/302H01L21/28H01L21/3065H01L21/308H01L21/3213
    • H01L21/3065H01L21/30655H01L21/3085H01L21/32136H01L21/32137H01L21/32139
    • The present invention relates to the etching of a gate film, a tungsten film, a silicon film, etc. In the present invention, use is made of an etching gas comprising a mixture composed of a reductive fluoride gas, a hydrocarbon gas and a halogen gas having a larger atomic diameter than a material to be etched, or a mixture composed of a reductive fluoride gas and a Cl-containing hydrocarbon gas, and the process comprises the step of conducting anisotropic etching of a material to be etched with an etching gas (a reductive fluoride gas), the step of forming a protective film by a depositing gas (a hydrocarbon gas), and the step of removing excess deposits formed as the protective film by means of a gas reactive with the protective film (a halogen gas or a Cl-containing hydrogen gas), wherein anisotropic etching is conducted by forming a protective film on a side wall while removing excess deposits formed as the protective film, thus enabling the anisotropic etching to be conducted with good accuracy.
    • 本发明涉及栅极膜,钨膜,硅膜等的蚀刻。在本发明中,使用包括由还原氟化物气体,烃气体和卤素组成的混合物的蚀刻气体 具有比待蚀刻材料更大的原子直径的气体或由还原性氟化物气体和含Cl的烃气体组成的混合物,该方法包括用蚀刻气体进行各向异性腐蚀蚀刻的步骤 (还原氟化物气体),通过沉积气体(烃气体)形成保护膜的步骤,以及通过与保护膜反应的气体(卤素气体)除去形成为保护膜的多余的沉积物的步骤 或含Cl的氢气),其中通过在侧壁上形成保护膜进行各向异性蚀刻,同时除去形成为保护膜的多余的沉积物,从而能够进行各向异性蚀刻 准确度好