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1. 发明申请

US20050161760A1 Schottky power diode comprising a sicoi substrate and the method of producing one such diode 有权
标题翻译：肖特基功率二极管包括一个硅片基板和产生一个这样的二极管的方法
公开(公告)号：US20050161760A1
公开(公告)日：2005-07-28
申请号：US10507757
申请日：2003-03-12
申请人： Francois Templier , Thierry Billon , Nicolas Daval
发明人： Francois Templier , Thierry Billon , Nicolas Daval
IPC分类号： H01L21/04 , H01L21/338 , H01L29/24 , H01L29/47 , H01L29/786 , H01L29/812 , H01L29/872 , H01L27/095 , H01L29/15
CPC分类号： H01L29/6606 , H01L21/0475 , H01L21/0495 , H01L29/1608 , H01L29/78684 , H01L29/8126 , H01L29/872 , Y10S438/931
摘要： The present invention relates to a power junction device including a substrate of the SiCOI type with a layer of silicon carbide (16) insulated from a solid carrier (12) by a buried layer of insulant (14), and including at least one Schottky contact between a first metal layer (40) and the surface layer of silicon carbide (16), the first metal layer (30) constituting an anode.
摘要翻译：本发明涉及一种功率接合装置，其包括具有通过绝缘体（14）的掩埋层与固体载体（12）绝缘的碳化硅层（16）的SiCOI型衬底，并且包括至少一个肖特基接触在第一金属层（40）和碳化硅（16）的表面层之间，构成阳极的第一金属层（30）。

2. 发明授权

US06636736B1 Device for allocating resources in a radiocommunication network 有权
标题翻译：用于在无线电通信网络中分配资源的设备
公开(公告)号：US06636736B1
公开(公告)日：2003-10-21
申请号：US09508132
申请日：2000-07-13
申请人： Thierry Billon
发明人： Thierry Billon
IPC分类号： H04Q720
CPC分类号： H04W16/12 , H04W16/02 , H04W16/10 , H04W72/08
摘要： A system for allocating a resource to a terminal in a cellular mobile radio network in which each cell of the network is identified by a primary color and a secondary color which correspond to transmission frequencies allocated to it, namely and respectively a set of primary frequencies (FP) and a set of secondary frequencies (FS) whose rate of re-use is higher than that of said primary frequencies (FP), and the terminal is connected to a local cell (A1). The system knows a potential level of interference (N) received by the terminal and allocates said resource to said terminal on a primary frequency (FP) or on a secondary frequency (FS) according to whether said potential level of interference (N) is respectively above or below a first distribution threshold (S1).
摘要翻译：一种用于向蜂窝移动无线电网络中的终端分配资源的系统，其中网络的每个小区由对应于分配给其的传输频率的主要颜色和次要颜色（即，一组主要频率（ FP）和一组次要频率（FS），其再利用率高于所述主频率（FP），并且终端连接到本地小区（A1）。该系统知道终端接收到的潜在的干扰电平（N），并根据所述潜在的干扰电平（N）分别在主频率（FP）还是次频（FS）上向所述终端分配所述资源高于或低于第一分布阈值（S1）。

3. 发明申请

US20110092210A1 METHOD OF DETERMINING WIRELESS HAND OFF PARAMETERS 有权
标题翻译：确定无线手机参数的方法
公开(公告)号：US20110092210A1
公开(公告)日：2011-04-21
申请号：US12827519
申请日：2010-06-30
申请人： Gopal N. Kumar , Thierry Billon , Victor Da Silva , Jean-Michel Pugeat , Richard L. Davies , Robert A. Soni , Frederic Deville
发明人： Gopal N. Kumar , Thierry Billon , Victor Da Silva , Jean-Michel Pugeat , Richard L. Davies , Robert A. Soni , Frederic Deville
IPC分类号： H04W36/00
CPC分类号： H04W36/0083 , H04W36/245 , H04W36/32
摘要： The present invention provides a method of determining handoff parameters. One embodiment of the method includes determining values of a hysteresis for a handoff from a serving cell, one or more pairwise offset values for hand off between the serving cell and one or more neighbor cells, and one or more times-to-trigger (TTTs) for hand off between the serving cell and the neighbor cell(s). The values may be determined So that hand off is triggered beyond a first distance from the serving cell selected to avoid ping-ponging and within a second distance from the serving cell selected so that a mobile unit moving at a selected velocity does not travel beyond a third distance within the TTT.
摘要翻译：本发明提供一种确定切换参数的方法。该方法的一个实施例包括确定来自服务小区的切换的滞后值，用于在服务小区与一个或多个相邻小区之间切换的一个或多个成对偏移值，以及一个或多个触发次数（TTT ）用于在服务小区和相邻小区之间切换。可以确定这些值，使得切换被触发超出所选择的服务小区的第一距离以避免乒乓，并且在与所选择的服务小区相距一秒的距离内被触发，使得以所选择的速度移动的移动单元不超出 TTT内第三距离。

4. 发明授权

US08326303B2 Method of determining wireless hand off parameters 有权
标题翻译：确定无线切换参数的方法
公开(公告)号：US08326303B2
公开(公告)日：2012-12-04
申请号：US12827519
申请日：2010-06-30
申请人： Gopal N. Kumar , Thierry Billon , Victor Da Silva , Jean-Michel Pugeat , Richard L. Davies , Robert A. Soni , Frederick Deville
发明人： Gopal N. Kumar , Thierry Billon , Victor Da Silva , Jean-Michel Pugeat , Richard L. Davies , Robert A. Soni , Frederick Deville
IPC分类号： H04W36/00
CPC分类号： H04W36/0083 , H04W36/245 , H04W36/32
摘要： The present invention provides a method of determining handoff parameters. One embodiment of the method includes determining values of a hysteresis for a handoff from a serving cell, one or more pairwise offset values for hand off between the serving cell and one or more neighbor cells, and one or more times-to-trigger (TTTs) for hand off between the serving cell and the neighbor cell(s). The values may be determined So that hand off is triggered beyond a first distance from the serving cell selected to avoid ping-ponging and within a second distance from the serving cell selected so that a mobile unit moving at a selected velocity does not travel beyond a third distance within the TTT.
摘要翻译：本发明提供一种确定切换参数的方法。该方法的一个实施例包括确定来自服务小区的切换的滞后值，用于在服务小区与一个或多个相邻小区之间切换的一个或多个成对偏移值，以及一个或多个触发次数（TTT ）用于在服务小区和相邻小区之间切换。可以确定这些值，使得切换被触发超出所选择的服务小区的第一距离以避免乒乓，并且在与所选择的服务小区相距一秒的距离内被触发，使得以所选择的速度移动的移动单元不超出 TTT内第三距离。

5. 发明申请

US20070142075A1 Method for controlling transmission power on a radio channel 审中-公开
标题翻译：用于控制无线电信道上的发射功率的方法
公开(公告)号：US20070142075A1
公开(公告)日：2007-06-21
申请号：US11540867
申请日：2006-09-29
申请人： Thierry Billon , Samuel Betrencourt
发明人： Thierry Billon , Samuel Betrencourt
IPC分类号： H04B7/00 , H04B1/00
CPC分类号： H04W52/12 , H04W52/20 , H04W52/44
摘要： A method for controlling the transmission power on a radio channel arranged for transmitting signals carrying elements of information arranged in successive timeslots from a first station to a second station, the radio channel including a data channel and a substantially permanent control channel, the transmission power in a timeslot depending on a reception level, at the second station, of the signal transmitted in a preceding timeslot and on a target level, said target level being set in accordance with an error rate calculated from the elements of information received from the first station. The error rate further takes account of a quality estimate on said control channel when at least one element of information is not transmitted.
摘要翻译：一种用于控制无线电信道上传输功率的方法，所述无线电信道被布置用于发送携带在从第一站到第二站的连续时隙中排列的信息的信号的信号，所述无线电信道包括数据信道和基本上永久的控制信道，根据在第二站处的接收电平的时隙，在先前时隙和目标电平上发送的信号中，根据从第一站接收的信息的要素计算出的错误率来设定所述目标电平。当不发送至少一个信息元素时，错误率进一步考虑了所述控制信道上的质量估计。

6. 发明授权

US07166894B2 Schottky power diode with SiCOI substrate and process for making such diode 有权
标题翻译：具有SiCOI衬底的肖特基功率二极管和用于制造这种二极管的工艺
公开(公告)号：US07166894B2
公开(公告)日：2007-01-23
申请号：US10507757
申请日：2003-03-12
申请人： François Templier , Thierry Billon , Nicolas Daval
发明人： François Templier , Thierry Billon , Nicolas Daval
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392 , H01L29/80 , H01L31/112
CPC分类号： H01L29/6606 , H01L21/0475 , H01L21/0495 , H01L29/1608 , H01L29/78684 , H01L29/8126 , H01L29/872 , Y10S438/931
摘要： The present invention relates to a power junction device including a substrate of the SiCOI type with a layer of silicon carbide (16) insulated from a solid carrier (12) by a buried layer of insulant (14), and including at least one Schottky contact between a first metal layer (40) and the surface layer of silicon carbide (16), the first metal layer (30) constituting an anode.
摘要翻译：本发明涉及一种功率接合装置，其包括具有通过绝缘体（14）的掩埋层与固体载体（12）绝缘的碳化硅层（16）的SiCOI型衬底，并且包括至少一个肖特基接触在第一金属层（40）和碳化硅（16）的表面层之间，构成阳极的第一金属层（30）。

7. 发明申请

US20060125057A1 Method for the production of a composite sicoi-type substrate comprising an epitaxy stage 审中-公开
标题翻译：用于生产包含外延级的复合硅片型基材的方法
公开(公告)号：US20060125057A1
公开(公告)日：2006-06-15
申请号：US10526657
申请日：2003-09-01
申请人： Lea Di Cioccio , Francois Templier , Thierry Billon , Fabrice Letertre
发明人： Lea Di Cioccio , Francois Templier , Thierry Billon , Fabrice Letertre
IPC分类号： H01L31/0312 , H01L29/06
CPC分类号： H01L21/7602 , C30B25/02 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02447 , H01L21/02529 , H01L21/2007
摘要： The invention relates to an SiCOI type composite substrate manufacturing method comprising the following steps: supply of an initial substrate comprising an Si or SiC support (1) bearing a layer (2) of SiO2 whereon a thin layer (3) of SiC is transferred, epitaxy of SiC (4) on the thin layer (3) of SiC. The epitaxy is conducted at the following temperatures from 1450° C. to obtain 6H or 4H polytype epitaxy (4) on a transferred thin 6H or 4H polytype layer (3) respectively, if the support (1) consists of SiC, from 1350° C. to obtain 3C polytype epitaxy (4) on a transferred thin 3C polytype layer (3), if the support (1) consists of Si or SiC, from 1350° C. to obtain 6H or 4H polytype epitaxy (4) on a transferred thin 6H or 4H polytype layer (3) respectively, if the support (1) consists of Si.
摘要翻译：本发明涉及一种SiCOI型复合衬底制造方法，包括以下步骤：提供包含Si或SiC载体（1）的初始衬底，所述Si或SiC载体（1）承载SiO 2层（2），其中SiC的薄层（3）被转移，在SiC的薄层（3）上SiC（4）的外延。如果载体（1）由SiC组成，则从1350°C开始，在1450℃的温度下进行外延生长，以在转移的薄6H或4H多型层（3）上分别获得6H或4H多型外延（4）如果载体（1）由Si或SiC由1350℃组成，则在转移的薄3C多型层（3）上获得3C多型外延（4），以获得6H或4H多型外延（4）如果载体（1）由Si组成，则分别转移薄的6H或4H多型层（3）。

8. 发明授权

US06975869B1 Method and apparatus for selecting parameters in a cellular radio communication network 失效
标题翻译：用于在蜂窝无线电通信网络中选择参数的方法和装置
公开(公告)号：US06975869B1
公开(公告)日：2005-12-13
申请号：US09720514
申请日：1999-06-23
申请人： Thierry Billon
发明人： Thierry Billon
IPC分类号： H04W16/18 , H04W24/00 , H04Q7/34
CPC分类号： H04W16/18 , H04W24/00
摘要： For each base station serving mobile stations in a cell, measurements carried out on radio channels in the cell are used to obtain values of a quantity compared to one or several associated parameters in a procedure managing radio resources allocated to the mobile stations. A statistic of the obtained values the quantity is maintained. The value of each associated parameter for the cell is adapted such that, according to the statistic, a predetermined fraction of the values of the quantity obtained from the measurements are higher than the associated parameter value.
摘要翻译：对于在小区中服务移动站的每个基站，在管理分配给移动站的无线电资源的过程中，使用在小区中的无线电信道上进行的测量来获得与一个或几个相关参数相比的数量的值。获得的值的统计量保持数量。调整单元的每个相关参数的值，使得根据统计量，从测量获得的数量的值的预定分数高于相关联的参数值。

9. 发明授权

US06225651B1 Structure with a micro-electronic component made of a semi-conductor material difficult to etch and with metallized holes 失效
标题翻译：具有由难以蚀刻和金属化孔的半导体材料制成的微电子部件的结构
公开(公告)号：US06225651B1
公开(公告)日：2001-05-01
申请号：US09095651
申请日：1998-06-11
申请人： Thierry Billon
发明人： Thierry Billon
IPC分类号： H01L2906
CPC分类号： H01L29/66863 , H01L21/2007 , H01L21/76898 , H01L23/481 , H01L29/66068 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a structure comprising a micro-electronic component (20) produced in a semi-conductor material difficult to etch. This structure is obtained by rigidly fixing a thin film (12) of the semi-conductor material that is difficult to etch onto the surface before attaching a first substrate made of a material that is easy to etch and which serves as a support. The micro-electronic component (20) is produced in the thin film (12) and a hole (33) passing right through is etched in the structure and metallized (35) in such a way that it electrically connects an electrode (18) formed on the back surface of the first substrate to an electrode (24) of the micro-electronic component (20).
摘要翻译：本发明涉及一种结构，其包括在难以蚀刻的半导体材料中制造的微电子部件（20）。这种结构是通过刚性地固定半导体材料的薄膜（12），该薄膜（12）在附着由易于蚀刻的材料制成的第一衬底并且用作支撑体之前难以蚀刻到表面上。在薄膜（12）中制造微电子部件（20），并且在结构中蚀刻穿过的孔（33）并金属化（35），使得其电连接形成的电极（18）在所述第一基板的背表面上延伸到所述微电子部件（20）的电极（24）。

10. 发明申请

US20050258483A1 Quasi-vertical power semiconductor device on a composite substrate 审中-公开
标题翻译：准垂直功率半导体器件在复合衬底上
公开(公告)号：US20050258483A1
公开(公告)日：2005-11-24
申请号：US10526641
申请日：2003-09-01
申请人： Francois Templier , Lea Di Cioccio , Thierry Billon , Fabrice Letertre
发明人： Francois Templier , Lea Di Cioccio , Thierry Billon , Fabrice Letertre
IPC分类号： H01L29/20 , H01L29/24 , H01L29/47 , H01L29/868 , H01L29/872 , H01L29/76
CPC分类号： H01L29/872 , H01L29/1608 , H01L29/2003 , H01L29/868
摘要： The invention relates to a power semiconducting device made from a semiconducting material epitaxied on a stacked structure (10) comprising a layer of semiconducting material (13) transferred onto a first face of a support substrate (11) and fixed to the support substrate by an electrically insulating layer (12), the support substrate comprising electrically conducting means between said first face and a second face, the transferred layer of semiconducting material (13) acting as an epitaxy support for the epitaxied semiconducting material (14, 15). Means (16, 17) of electrically connecting the device are provided, firstly on the epitaxied semiconducting material, and secondly on the second face of the support substrate, an electrical connection through the electrically insulating layer and said electrically conducting means of the support substrate electrically connecting the epitaxied semiconducting material (14, 15) to the electrically connecting means (17) provided on the second face of the support substrate (11).
摘要翻译：本发明涉及由半导体材料制成的功率半导体器件，该半导体材料包括在层叠结构（10）上，包括转移到支撑衬底（11）的第一面上的半导体材料层（13），并通过一个电绝缘层（12），所述支撑衬底包括在所述第一面和第二面之间的导电装置，所述转移的半导体材料层（13）用作所述表面半导体材料（14,15）的外延支撑。提供电连接器件的装置（16,17），首先在表面半导体材料上，其次在支撑衬底的第二面上，通过电绝缘层和支撑衬底的所述导电装置的电连接电将所述表面半导体材料（14,15）连接到设置在所述支撑基板（11）的第二面上的所述电连接装置（17）。

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